CN102446890A - 半导体装置及其制造方法、以及吸附位阻断原子层沉积法 - Google Patents

半导体装置及其制造方法、以及吸附位阻断原子层沉积法 Download PDF

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Publication number
CN102446890A
CN102446890A CN2011102968155A CN201110296815A CN102446890A CN 102446890 A CN102446890 A CN 102446890A CN 2011102968155 A CN2011102968155 A CN 2011102968155A CN 201110296815 A CN201110296815 A CN 201110296815A CN 102446890 A CN102446890 A CN 102446890A
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China
Prior art keywords
film
semiconductor device
dielectric film
layer
precursor
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Pending
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CN2011102968155A
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English (en)
Chinese (zh)
Inventor
广田俊幸
清村贵利
两角友一朗
菱屋晋吾
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Tokyo Electron Ltd
Micron Memory Japan Ltd
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Tokyo Electron Ltd
Elpida Memory Inc
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Publication of CN102446890A publication Critical patent/CN102446890A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69395—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing zirconium, e.g. ZrO2

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
CN2011102968155A 2010-09-27 2011-09-27 半导体装置及其制造方法、以及吸附位阻断原子层沉积法 Pending CN102446890A (zh)

Applications Claiming Priority (2)

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JP2010215361A JP5587716B2 (ja) 2010-09-27 2010-09-27 半導体装置及びその製造方法、並びに吸着サイト・ブロッキング原子層堆積法
JP2010-215361 2010-09-27

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CN102446890A true CN102446890A (zh) 2012-05-09

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Country Status (5)

Country Link
US (1) US8288241B2 (https=)
JP (1) JP5587716B2 (https=)
KR (1) KR101515675B1 (https=)
CN (1) CN102446890A (https=)
TW (1) TW201230171A (https=)

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CN105088185A (zh) * 2014-05-12 2015-11-25 东京毅力科创株式会社 成膜方法
CN108893725A (zh) * 2018-08-06 2018-11-27 吉林大学 一种使用多步原子层沉积技术生长均匀混合金属氧化物的方法
CN112038214A (zh) * 2020-06-19 2020-12-04 中国科学院微电子研究所 一种氧化锆膜及其沉积方法、应用
CN112309831A (zh) * 2019-07-26 2021-02-02 三星电子株式会社 形成氧化物膜的方法、制造半导体器件的方法、形成介电膜的方法和半导体器件
CN113314670A (zh) * 2020-02-26 2021-08-27 三星电子株式会社 电容器、包括其的半导体器件和电子设备、以及制造电容器的方法

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JP5675458B2 (ja) * 2011-03-25 2015-02-25 東京エレクトロン株式会社 成膜方法、成膜装置および記憶媒体
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JP6010451B2 (ja) * 2012-12-21 2016-10-19 東京エレクトロン株式会社 成膜方法
JP2014229680A (ja) * 2013-05-21 2014-12-08 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法
US9245743B2 (en) 2013-08-02 2016-01-26 Intermolecular, Inc. Methods for forming high-k dielectrics containing hafnium and zirconium using atomic layer deposition
JP6616070B2 (ja) * 2013-12-01 2019-12-04 ユージェヌス インコーポレイテッド 誘電性複合体構造の作製方法及び装置
JP6478813B2 (ja) * 2015-05-28 2019-03-06 東京エレクトロン株式会社 金属膜の成膜方法
KR102375981B1 (ko) * 2016-07-04 2022-03-18 삼성전자주식회사 반도체 장치 제조 방법 및 반도체 장치 제조 설비
US10468264B2 (en) * 2016-07-04 2019-11-05 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device
KR102208520B1 (ko) 2016-07-19 2021-01-26 어플라이드 머티어리얼스, 인코포레이티드 디스플레이 디바이스들에서 활용되는 지르코늄 산화물을 포함하는 하이-k 유전체 재료들
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KR102070971B1 (ko) 2017-01-02 2020-01-29 주식회사 엘지화학 Abs계 그라프트 공중합체, 이의 제조방법 및 이를 포함하는 열가소성 수지 조성물
JP6980406B2 (ja) * 2017-04-25 2021-12-15 株式会社日立ハイテク 半導体製造装置及び半導体装置の製造方法
CN109494302B (zh) * 2017-09-12 2024-04-05 松下知识产权经营株式会社 电容元件、图像传感器以及电容元件的制造方法
CN107527806A (zh) * 2017-09-29 2017-12-29 睿力集成电路有限公司 介电薄膜、介电层结构及制作方法
WO2019156451A1 (ko) * 2018-02-07 2019-08-15 주식회사 유피케미칼 4 족 금속 원소-함유 화합물, 이의 제조 방법, 이를 포함하는 막 형성용 전구체 조성물, 및 이를 이용하는 막의 형성 방법
JP6905149B2 (ja) 2019-02-14 2021-07-21 株式会社日立ハイテク 半導体製造装置
KR102622419B1 (ko) 2020-06-03 2024-01-08 삼성전자주식회사 반도체 장치 및 이의 제조 방법
EP3926071A1 (en) * 2020-06-19 2021-12-22 Samsung Electronics Co., Ltd. Method and apparatus for filling gap using atomic layer deposition
US11967502B2 (en) 2020-06-30 2024-04-23 Samsung Electronics Co., Ltd. Methods of forming material layer, semiconductor devices, and methods of manufacturing the same
JP7787555B2 (ja) * 2020-12-04 2025-12-17 株式会社高純度化学研究所 インジウムおよび一種以上の他の金属を含有する膜を製造するための蒸着用原料およびインジウムおよび一種以上の他の金属を含有する膜の製造方法
KR102813679B1 (ko) * 2021-01-22 2025-05-27 삼성전자주식회사 반도체 장치 및 이의 제조 방법
WO2023282104A1 (ja) 2021-07-07 2023-01-12 株式会社Adeka 化合物、薄膜形成用原料、薄膜及び薄膜の製造方法

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CN105088185A (zh) * 2014-05-12 2015-11-25 东京毅力科创株式会社 成膜方法
CN105088185B (zh) * 2014-05-12 2019-07-16 东京毅力科创株式会社 成膜方法
CN108893725A (zh) * 2018-08-06 2018-11-27 吉林大学 一种使用多步原子层沉积技术生长均匀混合金属氧化物的方法
CN108893725B (zh) * 2018-08-06 2020-08-04 吉林大学 一种使用多步原子层沉积技术生长均匀混合金属氧化物的方法
CN112309831A (zh) * 2019-07-26 2021-02-02 三星电子株式会社 形成氧化物膜的方法、制造半导体器件的方法、形成介电膜的方法和半导体器件
CN113314670A (zh) * 2020-02-26 2021-08-27 三星电子株式会社 电容器、包括其的半导体器件和电子设备、以及制造电容器的方法
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CN112038214A (zh) * 2020-06-19 2020-12-04 中国科学院微电子研究所 一种氧化锆膜及其沉积方法、应用

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JP2012069871A (ja) 2012-04-05
JP5587716B2 (ja) 2014-09-10
US20120077322A1 (en) 2012-03-29
US8288241B2 (en) 2012-10-16
KR20120031915A (ko) 2012-04-04
KR101515675B1 (ko) 2015-04-27
TW201230171A (en) 2012-07-16

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