KR101515675B1 - 반도체 장치 및 그 제조 방법, 그리고 흡착 사이트ㆍ블로킹 원자층 퇴적법 - Google Patents

반도체 장치 및 그 제조 방법, 그리고 흡착 사이트ㆍ블로킹 원자층 퇴적법 Download PDF

Info

Publication number
KR101515675B1
KR101515675B1 KR1020110097193A KR20110097193A KR101515675B1 KR 101515675 B1 KR101515675 B1 KR 101515675B1 KR 1020110097193 A KR1020110097193 A KR 1020110097193A KR 20110097193 A KR20110097193 A KR 20110097193A KR 101515675 B1 KR101515675 B1 KR 101515675B1
Authority
KR
South Korea
Prior art keywords
film
layer
dielectric film
blocker
zro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110097193A
Other languages
English (en)
Korean (ko)
Other versions
KR20120031915A (ko
Inventor
도시유키 히로타
다카카즈 기요무라
유이치로 모로즈미
신고 히시야
Original Assignee
엘피다 메모리 가부시키가이샤
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘피다 메모리 가부시키가이샤, 도쿄엘렉트론가부시키가이샤 filed Critical 엘피다 메모리 가부시키가이샤
Publication of KR20120031915A publication Critical patent/KR20120031915A/ko
Application granted granted Critical
Publication of KR101515675B1 publication Critical patent/KR101515675B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69395—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing zirconium, e.g. ZrO2

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
KR1020110097193A 2010-09-27 2011-09-26 반도체 장치 및 그 제조 방법, 그리고 흡착 사이트ㆍ블로킹 원자층 퇴적법 Expired - Fee Related KR101515675B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010215361A JP5587716B2 (ja) 2010-09-27 2010-09-27 半導体装置及びその製造方法、並びに吸着サイト・ブロッキング原子層堆積法
JPJP-P-2010-215361 2010-09-27

Publications (2)

Publication Number Publication Date
KR20120031915A KR20120031915A (ko) 2012-04-04
KR101515675B1 true KR101515675B1 (ko) 2015-04-27

Family

ID=45871073

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110097193A Expired - Fee Related KR101515675B1 (ko) 2010-09-27 2011-09-26 반도체 장치 및 그 제조 방법, 그리고 흡착 사이트ㆍ블로킹 원자층 퇴적법

Country Status (5)

Country Link
US (1) US8288241B2 (https=)
JP (1) JP5587716B2 (https=)
KR (1) KR101515675B1 (https=)
CN (1) CN102446890A (https=)
TW (1) TW201230171A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180080105A (ko) 2017-01-02 2018-07-11 주식회사 엘지화학 Abs계 그라프트 공중합체, 이의 제조방법 및 이를 포함하는 열가소성 수지 조성물

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5693348B2 (ja) * 2010-05-28 2015-04-01 東京エレクトロン株式会社 成膜方法および成膜装置
TWI492368B (zh) 2011-01-14 2015-07-11 半導體能源研究所股份有限公司 半導體記憶裝置
JP5675458B2 (ja) * 2011-03-25 2015-02-25 東京エレクトロン株式会社 成膜方法、成膜装置および記憶媒体
JP2014017354A (ja) * 2012-07-09 2014-01-30 Tokyo Electron Ltd 成膜方法
US9536940B2 (en) * 2012-09-19 2017-01-03 Micron Technology, Inc. Interfacial materials for use in semiconductor structures and related methods
JP6010451B2 (ja) * 2012-12-21 2016-10-19 東京エレクトロン株式会社 成膜方法
JP2014229680A (ja) * 2013-05-21 2014-12-08 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法
US9245743B2 (en) 2013-08-02 2016-01-26 Intermolecular, Inc. Methods for forming high-k dielectrics containing hafnium and zirconium using atomic layer deposition
JP6616070B2 (ja) * 2013-12-01 2019-12-04 ユージェヌス インコーポレイテッド 誘電性複合体構造の作製方法及び装置
JP6294151B2 (ja) * 2014-05-12 2018-03-14 東京エレクトロン株式会社 成膜方法
JP6478813B2 (ja) * 2015-05-28 2019-03-06 東京エレクトロン株式会社 金属膜の成膜方法
KR102375981B1 (ko) * 2016-07-04 2022-03-18 삼성전자주식회사 반도체 장치 제조 방법 및 반도체 장치 제조 설비
US10468264B2 (en) * 2016-07-04 2019-11-05 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device
KR102208520B1 (ko) 2016-07-19 2021-01-26 어플라이드 머티어리얼스, 인코포레이티드 디스플레이 디바이스들에서 활용되는 지르코늄 산화물을 포함하는 하이-k 유전체 재료들
EP3508035B1 (en) * 2016-09-02 2021-04-21 Beneq OY Inorganic tfel display element and manufacturing
JP6980406B2 (ja) * 2017-04-25 2021-12-15 株式会社日立ハイテク 半導体製造装置及び半導体装置の製造方法
CN109494302B (zh) * 2017-09-12 2024-04-05 松下知识产权经营株式会社 电容元件、图像传感器以及电容元件的制造方法
CN107527806A (zh) * 2017-09-29 2017-12-29 睿力集成电路有限公司 介电薄膜、介电层结构及制作方法
WO2019156451A1 (ko) * 2018-02-07 2019-08-15 주식회사 유피케미칼 4 족 금속 원소-함유 화합물, 이의 제조 방법, 이를 포함하는 막 형성용 전구체 조성물, 및 이를 이용하는 막의 형성 방법
CN108893725B (zh) * 2018-08-06 2020-08-04 吉林大学 一种使用多步原子层沉积技术生长均匀混合金属氧化物的方法
JP6905149B2 (ja) 2019-02-14 2021-07-21 株式会社日立ハイテク 半導体製造装置
KR102814796B1 (ko) 2019-07-26 2025-05-29 삼성전자주식회사 2종 물질 산화막의 형성 방법, 반도체 소자의 제조 방법, 유전막 형성 방법, 및 반도체 소자
KR102792553B1 (ko) 2020-02-26 2025-04-08 삼성전자주식회사 커패시터, 이를 포함하는 반도체 장치. 및 커패시터 제조 방법
KR102622419B1 (ko) 2020-06-03 2024-01-08 삼성전자주식회사 반도체 장치 및 이의 제조 방법
EP3926071A1 (en) * 2020-06-19 2021-12-22 Samsung Electronics Co., Ltd. Method and apparatus for filling gap using atomic layer deposition
CN112038214A (zh) * 2020-06-19 2020-12-04 中国科学院微电子研究所 一种氧化锆膜及其沉积方法、应用
US11967502B2 (en) 2020-06-30 2024-04-23 Samsung Electronics Co., Ltd. Methods of forming material layer, semiconductor devices, and methods of manufacturing the same
JP7787555B2 (ja) * 2020-12-04 2025-12-17 株式会社高純度化学研究所 インジウムおよび一種以上の他の金属を含有する膜を製造するための蒸着用原料およびインジウムおよび一種以上の他の金属を含有する膜の製造方法
KR102813679B1 (ko) * 2021-01-22 2025-05-27 삼성전자주식회사 반도체 장치 및 이의 제조 방법
WO2023282104A1 (ja) 2021-07-07 2023-01-12 株式会社Adeka 化合物、薄膜形成用原料、薄膜及び薄膜の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004511909A (ja) * 2000-10-10 2004-04-15 エーエスエム　インターナショナル　エヌ．ヴェー． 誘電体界面被膜およびその方法
JP2007110111A (ja) * 2005-10-12 2007-04-26 Seoul National Univ Industry Foundation ルテニウム電極と二酸化チタン誘電膜とを利用する半導体素子のキャパシタ及びその製造方法
JP2009059889A (ja) * 2007-08-31 2009-03-19 Elpida Memory Inc キャパシタ及びその製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311956A (ja) * 1999-04-27 2000-11-07 Toshiba Corp 不揮発性半導体記憶装置とその製造方法
US6297539B1 (en) * 1999-07-19 2001-10-02 Sharp Laboratories Of America, Inc. Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same
EP1256638B1 (en) * 2001-05-07 2008-03-26 Samsung Electronics Co., Ltd. Method of forming a multi-components thin film
KR100474847B1 (ko) * 2001-05-07 2005-03-08 삼성전자주식회사 다성분계 박막 및 그 형성 방법
US6656835B2 (en) * 2001-06-21 2003-12-02 Micron Technology, Inc. Process for low temperature atomic layer deposition of Rh
KR100728962B1 (ko) 2004-11-08 2007-06-15 주식회사 하이닉스반도체 지르코늄산화막을 갖는 반도체소자의 캐패시터 및 그 제조방법
KR100634241B1 (ko) * 2005-05-30 2006-10-13 삼성전자주식회사 반도체 커패시터 및 그 제조 방법
JP2007067366A (ja) * 2005-08-05 2007-03-15 Elpida Memory Inc 半導体記憶装置の製造方法
KR100648860B1 (ko) * 2005-09-08 2006-11-24 주식회사 하이닉스반도체 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법
KR100670747B1 (ko) * 2005-11-28 2007-01-17 주식회사 하이닉스반도체 반도체소자의 캐패시터 제조 방법
KR100716654B1 (ko) * 2006-04-04 2007-05-09 주식회사 하이닉스반도체 정방정계 구조의 지르코늄산화막 형성 방법 및 그를 구비한캐패시터의 제조 방법
EP2029790A1 (en) * 2006-06-02 2009-03-04 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
WO2008108128A1 (ja) * 2007-03-08 2008-09-12 Nec Corporation 誘電体、誘電体を用いたキャパシタ、誘電体を用いた半導体装置、及び誘電体の製造方法
CN101827956A (zh) * 2007-09-14 2010-09-08 西格玛-奥吉奇公司 采用基于单环戊二烯基钛的前体通过原子层沉积制备含钛薄膜的方法
WO2009057589A1 (ja) * 2007-10-30 2009-05-07 Nec Corporation キャパシタとそれを有する半導体装置およびキャパシタの製造方法
US8368175B2 (en) * 2008-03-28 2013-02-05 Nec Corporation Capacitor, semiconductor device having the same, and method of producing them
JP2009283850A (ja) * 2008-05-26 2009-12-03 Elpida Memory Inc キャパシタ用絶縁膜及びその形成方法、並びにキャパシタ及び半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004511909A (ja) * 2000-10-10 2004-04-15 エーエスエム　インターナショナル　エヌ．ヴェー． 誘電体界面被膜およびその方法
JP2007110111A (ja) * 2005-10-12 2007-04-26 Seoul National Univ Industry Foundation ルテニウム電極と二酸化チタン誘電膜とを利用する半導体素子のキャパシタ及びその製造方法
JP2009059889A (ja) * 2007-08-31 2009-03-19 Elpida Memory Inc キャパシタ及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180080105A (ko) 2017-01-02 2018-07-11 주식회사 엘지화학 Abs계 그라프트 공중합체, 이의 제조방법 및 이를 포함하는 열가소성 수지 조성물

Also Published As

Publication number Publication date
JP2012069871A (ja) 2012-04-05
CN102446890A (zh) 2012-05-09
JP5587716B2 (ja) 2014-09-10
US20120077322A1 (en) 2012-03-29
US8288241B2 (en) 2012-10-16
KR20120031915A (ko) 2012-04-04
TW201230171A (en) 2012-07-16

Similar Documents

Publication Publication Date Title
KR101515675B1 (ko) 반도체 장치 및 그 제조 방법, 그리고 흡착 사이트ㆍ블로킹 원자층 퇴적법
JP5079183B2 (ja) テクスチャ加工されたキャパシタ電極上のコンフォーマル薄膜
KR100555543B1 (ko) 원자층 증착법에 의한 고유전막 형성 방법 및 그고유전막을 갖는 커패시터의 제조 방법
US8574983B2 (en) Method for fabricating a DRAM capacitor having increased thermal and chemical stability
US8592294B2 (en) High temperature atomic layer deposition of dielectric oxides
US8542523B2 (en) Method for fabricating a DRAM capacitor having increased thermal and chemical stability
US8256077B2 (en) Method for forming a capacitor dielectric having tetragonal phase
TWI488290B (zh) 包括含碳電極之半導體元件及其製法
US20120064690A1 (en) Method for manufacturing semiconductor device
CN102810515A (zh) 形成具有金红石晶体结构的氧化钛膜的方法
KR20120104552A (ko) 유전체 막들의 부동태화를 위한 공정들
JP2012080094A (ja) 半導体記憶装置及びその製造方法
US8092862B2 (en) Method for forming dielectric film and method for forming capacitor in semiconductor device using the same
JP2008258623A (ja) 酸化ジルコニウム系キャパシタ及び同キャパシタの製造方法
US20250254898A1 (en) Semiconductor device and method for fabricating the same
KR100717813B1 (ko) 나노믹스드 유전막을 갖는 캐패시터 및 그의 제조 방법
KR20110103534A (ko) 유전막 구조물 형성 방법, 이를 이용한 커패시터 제조 방법 및 커패시터
KR100716642B1 (ko) 캐패시터의 유전막 및 그의 제조방법
US20260047362A1 (en) Method of manufacturing semiconductor device
KR20050067577A (ko) 혼합유전막의 제조 방법
KR20080102625A (ko) 캐패시터 및 그의 제조방법
KR20120134009A (ko) 루틸 결정 구조를 갖는 티타늄 옥사이드 막 형성 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180422

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180422

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000