JP2012049509A - トレンチの埋め込み方法および成膜システム - Google Patents
トレンチの埋め込み方法および成膜システム Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 65
- 238000011049 filling Methods 0.000 title claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 215
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 215
- 239000010703 silicon Substances 0.000 claims abstract description 215
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 239000004065 semiconductor Substances 0.000 claims abstract description 64
- 239000000463 material Substances 0.000 claims abstract description 49
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 48
- 230000003647 oxidation Effects 0.000 claims abstract description 38
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 67
- 238000010304 firing Methods 0.000 claims description 14
- 229910000077 silane Inorganic materials 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- WZUCGJVWOLJJAN-UHFFFAOYSA-N diethylaminosilicon Chemical compound CCN([Si])CC WZUCGJVWOLJJAN-UHFFFAOYSA-N 0.000 claims description 4
- AWFPGKLDLMAPMK-UHFFFAOYSA-N dimethylaminosilicon Chemical compound CN(C)[Si] AWFPGKLDLMAPMK-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000011066 ex-situ storage Methods 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 claims description 2
- UOERHRIFSQUTET-UHFFFAOYSA-N N-propyl-N-silylpropan-1-amine Chemical compound CCCN([SiH3])CCC UOERHRIFSQUTET-UHFFFAOYSA-N 0.000 claims description 2
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 abstract description 13
- 239000011800 void material Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 277
- 239000010410 layer Substances 0.000 description 94
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 15
- LGCMKPRGGJRYGM-UHFFFAOYSA-N Osalmid Chemical group C1=CC(O)=CC=C1NC(=O)C1=CC=CC=C1O LGCMKPRGGJRYGM-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000005728 strengthening Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000011534 incubation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229920000592 inorganic polymer Polymers 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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Abstract
【解決手段】 少なくともトレンチ6の側壁に酸化膜7が形成されている半導体基板1を加熱し、半導体基板1の表面にアミノシラン系ガスを供給して半導体基板1上にシード層8を形成し、シード層8が形成された半導体基板1を加熱し、シード層8の表面にモノシランガスを供給してシード層8上にシリコン膜9を形成し、シリコン膜9が形成された半導体基板1のトレンチ6を、焼成することで収縮する埋め込み材料10を用いて埋め込み、トレンチ6を埋め込む埋め込み材料10を、水及び/又はヒドロキシ基を含む雰囲気中で焼成するとともに、シリコン膜9、及びシード層8をシリコン酸化物に変化させる。
【選択図】図2
Description
SiH2NH+2H2O → SiO2+NH3+2H2
しかし、PHPSはシリコン酸化物に変化するときに収縮する。このため、微細なトレンチの内部に空隙が発生してしまう。
図1は、この発明の第1の実施形態に係るトレンチの埋め込み方法のシーケンスの一例を示す流れ図、図2A〜図2Gは、図1に示すシーケンス中の半導体基板の状態を概略的に示す断面図である。
BAS(ブチルアミノシラン)
BTBAS(ビスターシャリブチルアミノシラン)
DMAS(ジメチルアミノシラン)
BDMAS(ビスジメチルアミノシラン)
TDMAS(トリジメチルアミノシラン)、
DEAS(ジエチルアミノシラン)、
BDEAS(ビスジエチルアミノシラン)、
DPAS(ジプロピルアミノシラン)、
DIPAS(ジイソプロピルアミノシラン)
等を挙げることができる。本例では、DIPASを用いた。
DIPAS流量: 500sccm
処 理 時 間: 1min
処 理 温 度: 400℃
処 理 圧 力: 53.3Pa(0.4Torr)
である。ステップ3の工程を、本明細書では以下プリフローと呼ぶ。
モノシラン流量: 800sccm
処 理 時 間: 4min
処 理 温 度: 535℃
処 理 圧 力: 60Pa(0.45Torr)
である。
H2O 流量: 10l/min
処 理 時 間: 45min
処 理 温 度: 750℃
処 理 圧 力: 53.3kPa(400Torr)
である。
DIPAS流量: 200sccm
処 理 時 間: 1min
処 理 温 度: 400℃
処 理 圧 力: 133.3Pa(1Torr)
である。
モノシラン流量: 200sccm
堆 積 時 間: 30min/45min/60min
処 理 温 度: 530℃
処 理 圧 力: 53.2Pa(0.4Torr)
である。
線II:y=17.605x−34.929 …(2)
図3に示すように、プリフロー有りの場合、プリフロー無しに比較してシリコン膜9の膜厚が増す傾向が明らかとなった。
シード層8及びシリコン膜9を形成する処理条件によっては、埋め込み材料10の焼成中、ガスを放出するようなシード層8及びシリコン膜9が形成されることがある。埋め込み材料10の焼成中に、シード層8及びシリコン膜9がガスを放出してしまうと、トレンチ6の内部に埋め込まれた埋め込み材料に空隙が発生する。
N2 流 量:5000sccm
処 理 時 間: 30min
処 理 温 度: 600℃
処 理 圧 力:0〜666Pa(0〜5Torr:サイクルパージ)
である。
第3の実施形態は、良好なステップカバレッジを維持したまま、シリコン膜9の膜厚を、さらに薄くしようとする例である。
ジシラン流 量: 200sccm
処 理 時 間: 2min
処 理 温 度: 400℃
処 理 圧 力:133.3Pa(1Torr)
である。
このように第1の実施形態と本第3の実施形態とは、半導体装置の製造の分野において互いに共存することが可能である。
第4の実施形態は、第1〜第3の実施形態に係るトレンチの埋め込み方法を実施することが可能な成膜システムの例に関する。
図13は、成膜システムの第1例を概略的に示すブロック図である。
図14は、成膜システムの第2例を概略的に示すブロック図である。
図15は、成膜システムの第3例を概略的に示すブロック図である。
図16は、成膜システムの第4例を概略的に示すブロック図である。
Claims (17)
- (1) トレンチが形成され、少なくとも前記トレンチの側壁に酸化膜が形成されている半導体基板を加熱し、前記半導体基板の表面にアミノシラン系ガスを供給して前記半導体基板上にシード層を形成する工程と、
(2) 前記シード層が形成された半導体基板を加熱し、前記シード層の表面にモノシランガスを供給して前記シード層上にシリコン膜を形成する工程と、
(3) 前記シリコン膜が形成された半導体基板の前記トレンチを、焼成することで収縮する埋め込み材料を用いて埋め込む工程と、
(4) 前記トレンチを埋め込む前記埋め込み材料を、水及び/又はヒドロキシ基を含む雰囲気中で焼成するとともに、前記シリコン膜、及び前記シード層をシリコン酸化物に変化させる工程と
を含むことを特徴とするトレンチの埋め込み方法。 - 前記(2)工程と前記(3)工程との間に、
(5) 前記シリコン膜及び前記シード層が形成された半導体基板を加熱し、前記シリコン膜及び前記シード層からガスを放出させる工程
を、さらに含むことを特徴とする請求項1に記載のトレンチの埋め込み方法。 - 前記(2)工程と前記(3)工程とをインサイチュで行う場合、
前記(2)工程と前記(5)工程との間に、
(6) 前記シリコン膜及び前記シード層が形成された半導体基板を、酸素に接触させる工程
を、さらに含むことを特徴とする請求項2に記載のトレンチの埋め込み方法。 - 前記(2)工程と前記(3)工程とをエクスサイチュで行う場合、
前記(2)工程と前記(5)工程との間に、
(7) 前記シリコン膜及び前記シード層が形成された半導体基板を、大気下で搬送する工程
を、さらに含むことを特徴とする請求項2に記載のトレンチの埋め込み方法。 - 前記(1)工程と前記(2)工程との間に、
(6) 前記シード層が形成された半導体基板を加熱し、前記シード層の表面にモノシランよりも高次のシラン系ガスを供給する工程
を、さらに含むことを特徴とする請求項1から請求項4いずれか一項に記載のトレンチの埋め込み方法。 - 前記シリコン膜及び前記シード層は、前記シリコン酸化物に変化するときに膨張し、
前記シリコン膜の膨張量の2倍値と、前記シード層の膨張量の2倍値との合計値が、前記埋め込み材料の収縮量に一致するように、前記シリコン膜の厚さ及び前記シード層の厚さが設定されることを特徴とする請求項1から請求項5いずれか一項に記載のトレンチの埋め込み方法。 - 前記シリコン膜の膨張後の厚さの2倍値と、前記シード層の膨張後の厚さの2倍値と、前記埋め込み材料の収縮後の厚さとの合計値が、前記トレンチの幅に一致するように設定されることを特徴とする請求項6に記載のトレンチの埋め込み方法。
- 前記シリコン膜の厚さが、前記シード層の厚さよりも厚く設定されることを特徴とする請求項6又は請求項7に記載のトレンチの埋め込み方法。
- 前記アミノシラン系ガスが、
BAS(ブチルアミノシラン)
BTBAS(ビスターシャリブチルアミノシラン)
DMAS(ジメチルアミノシラン)
BDMAS(ビスジメチルアミノシラン)
TDMAS(トリジメチルアミノシラン)
DEAS(ジエチルアミノシラン)
BDEAS(ビスジエチルアミノシラン)
DPAS(ジプロピルアミノシラン)、及び
DIPAS(ジイソプロピルアミノシラン)
の少なくとも一つを含むガスから選ばれることを特徴とする請求項1から請求項8のいずれか一項に記載のトレンチの埋め込み方法。 - 前記トレンチの側壁に形成された酸化膜が、
前記トレンチが形成された半導体基板をラジカル酸化、又はプラズマ酸化して形成されることを特徴とする請求項1から請求項9いずれか一項に記載のトレンチの埋め込み方法。 - 前記トレンチの埋め込み方法が、半導体装置の製造プロセスに用いられることを特徴とする請求項1から請求項10いずれか一項に記載のトレンチの埋め込み方法。
- 前記トレンチが、前記半導体装置の内部の素子分離領域に使用されることを特徴とする請求項11に記載のトレンチの埋め込み方法。
- 半導体基板に形成されたトレンチの埋め込みに使用される成膜システムであって、
トレンチが形成され、少なくとも前記トレンチの側壁に酸化膜が形成されている半導体基板を加熱し、前記半導体基板の表面にアミノシラン系ガスを供給して前記半導体基板上にシード層を形成し、前記シード層が形成された半導体基板を加熱し、前記シード層の表面にモノシランガスを供給して前記シード層上にシリコン膜を形成する第1の処理室と、
前記シリコン膜が形成された半導体基板の前記トレンチを、焼成することで収縮する埋め込み材料を用いて埋め込む第2の処理室と、
前記トレンチを埋め込む前記埋め込み材料を、水及び/又はヒドロキシ基を含む雰囲気中で焼成するとともに、前記シリコン膜、及び前記シード層をシリコン酸化物に変化させる第3の処理室と
を含むことを特徴とする成膜システム。 - 前記第1の処理室で処理された半導体基板を加熱し、前記シリコン膜及び前記シード層からガスを放出させる第4の処理室を、さらに含むことを特徴とする請求項13に記載の成膜システム。
- 前記第1の処理室で処理された半導体基板を、前記第4の処理室に収容する前に、前記シリコン膜及び前記シード層が形成された半導体基板を、酸素に接触させる第5の処理室を、さらに含むことを特徴とする請求項14に記載の成膜システム。
- 前記第1の処理室で処理された半導体基板を、前記第4の処理室に収容する前に、前記シリコン膜及び前記シード層が形成された半導体基板を、大気下で搬送する搬送路を、さらに含むことを特徴とする請求項14に記載の成膜システム。
- 前記第1の処理室に、前記モノシランガスよりも高次のシランガスを供給する高次のシランガス供給源が、さらに接続されていることを特徴とする請求項13から請求項16のいずれか一項に記載の成膜システム。
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KR101409604B1 (ko) | 2014-06-18 |
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US20120028437A1 (en) | 2012-02-02 |
KR20120011825A (ko) | 2012-02-08 |
US8722510B2 (en) | 2014-05-13 |
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