JP2012039102A - 半導体装置とその作製方法 - Google Patents
半導体装置とその作製方法 Download PDFInfo
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- JP2012039102A JP2012039102A JP2011154661A JP2011154661A JP2012039102A JP 2012039102 A JP2012039102 A JP 2012039102A JP 2011154661 A JP2011154661 A JP 2011154661A JP 2011154661 A JP2011154661 A JP 2011154661A JP 2012039102 A JP2012039102 A JP 2012039102A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims description 210
- 238000005530 etching Methods 0.000 claims abstract description 121
- 238000000034 method Methods 0.000 claims abstract description 56
- 239000000460 chlorine Substances 0.000 claims description 22
- 229910052731 fluorine Inorganic materials 0.000 claims description 17
- 239000011737 fluorine Substances 0.000 claims description 17
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 14
- 229910052801 chlorine Inorganic materials 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 3
- 239000010410 layer Substances 0.000 description 338
- 239000010408 film Substances 0.000 description 150
- 239000007789 gas Substances 0.000 description 58
- 239000000758 substrate Substances 0.000 description 44
- 239000011701 zinc Substances 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
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- 238000000206 photolithography Methods 0.000 description 4
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- 229910018137 Al-Zn Inorganic materials 0.000 description 2
- 229910018573 Al—Zn Inorganic materials 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910020868 Sn-Ga-Zn Inorganic materials 0.000 description 2
- 229910020994 Sn-Zn Inorganic materials 0.000 description 2
- 229910009069 Sn—Zn Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 1
- 229910020944 Sn-Mg Inorganic materials 0.000 description 1
- 229910009369 Zn Mg Inorganic materials 0.000 description 1
- 229910007573 Zn-Mg Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
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- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
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- 230000008022 sublimation Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract
【解決手段】例えば、ボトムゲート・ボトムコンタクト構造のトランジスタを作製するに際して、ソースとドレインを構成する導電層を3層の積層構造とし、2段階のエッチングを行う。すなわち、第1のエッチング工程には、少なくとも第2の膜及び第3の膜に対するエッチングレートが高いエッチング方法を採用し、第1のエッチング工程は少なくとも第1の膜を露出するまで行う。第2のエッチング工程には、第1の膜に対するエッチングレートが第1のエッチング工程よりも高く、「第1の膜の下に接して設けられている層」に対するエッチングレートが第1のエッチング工程よりも低いエッチング方法を採用する。第2のエッチング工程後にレジストマスクをレジスト剥離液により剥離するに際し、第2の膜の側壁が少し削られる。
【選択図】図2
Description
本実施の形態は、本発明の一態様である半導体装置及びその作製方法について説明する。なお、半導体装置の一例として、トランジスタを例示して説明する。
本発明は、実施の形態1に示した形態に限定されない。例えば、本発明の一態様である半導体装置としてのトランジスタは、TGTC構造であってもよい。
次に、本発明の一態様である電子機器について説明する。本発明の一態様である電子機器には、実施の形態1及び実施の形態2で説明したトランジスタの少なくとも一つを搭載させる。本発明の一態様である電子機器として、例えば、コンピュータ、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯情報端末(携帯型ゲーム機、音響再生装置なども含む)、デジタルカメラ、デジタルビデオカメラ、電子ペーパー、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)などが挙げられる。例えば、このような電子機器の表示部を構成する画素トランジスタに実施の形態1及び実施の形態2で説明したトランジスタを適用すればよい。
102 第1の配線層
104 第1の絶縁層
106 半導体層
107 積層導電膜
107A 第1の導電膜
107B 第2の導電膜
107C 第3の導電膜
107D 第1の導電膜
107E 第2の導電膜
107F 第3の導電膜
108 第2の配線層
108A 第2の配線層の第1の層
108B 第2の配線層の第2の層
108C 第2の配線層の第3の層
109 レジストマスク
109C レジストマスク
110 第2の絶縁層
112 第3の配線層
200 基板
204 下地絶縁層
206 半導体層
207 積層導電膜
207A 第1の導電膜
207B 第2の導電膜
207C 第3の導電膜
207D 第1の導電膜
207E 第2の導電膜
207F 第3の導電膜
208 第1の配線層
208A 第1の配線層の第1の層
208B 第1の配線層の第2の層
208C 第1の配線層の第3の層
209 レジストマスク
209C レジストマスク
210 絶縁層
212 第2の配線層
301 筐体
302 筐体
303 表示部
304 キーボード
311 本体
312 スタイラス
313 表示部
314 操作ボタン
315 外部インターフェイス
320 電子書籍
321 筐体
323 筐体
325 表示部
327 表示部
331 電源
333 操作キー
335 スピーカー
337 軸部
340 筐体
341 筐体
342 表示パネル
343 スピーカー
344 マイクロフォン
346 ポインティングデバイス
347 カメラ用レンズ
348 外部接続端子
349 太陽電池セル
350 外部メモリスロット
361 本体
363 接眼部
364 操作スイッチ
365 表示部
366 バッテリー
367 表示部
370 テレビジョン装置
371 筐体
373 表示部
375 スタンド
380 リモコン操作機
Claims (11)
- 第1の配線層を形成し、
前記第1の配線層を覆って絶縁層を形成し、
前記絶縁層上に半導体層を形成し、
前記半導体層上に第1の導電膜、第2の導電膜及び第3の導電膜をこの順に積層して形成し、
前記第3の導電膜上にレジストマスクを形成し、
前記レジストマスクを用いて、前記第1乃至第3の導電膜に少なくとも2段階のエッチングを行って、3層の積層構造からなる第2の配線層を離間させて形成し、
前記2段階のエッチングが、
少なくとも前記第1の導電膜を露出させるまで行う第1のエッチング工程と、
前記第1の導電膜に対するエッチングレートが前記第1のエッチング工程よりも高く、前記半導体層に対するエッチングレートが前記第1のエッチング工程よりも低い条件により行う第2のエッチング工程と、を有し、
前記第2のエッチング工程後にレジスト剥離液を用いて前記レジストマスクを剥離することを特徴とする半導体装置の作製方法。 - 半導体層を形成し、
前記半導体層上に第1の導電膜、第2の導電膜及び第3の導電膜をこの順に積層して形成し、
前記第3の導電膜上にレジストマスクを形成し、
前記レジストマスクを用いて、前記第1乃至第3の導電膜に少なくとも2段階のエッチングを行って、3層の積層構造からなる第1の配線層を離間させて形成し、
前記第1の配線層及び前記半導体層を覆って絶縁層を形成し、
前記絶縁層上に前記半導体層と重畳して第2の配線層を形成し、
前記2段階のエッチングが、
少なくとも前記第1の導電膜を露出させるまで行う第1のエッチング工程と、
前記第1の導電膜に対するエッチングレートが前記第1のエッチング工程よりも高く、前記半導体層に対するエッチングレートが前記第1のエッチング工程よりも低い条件により行う第2のエッチング工程と、を有し、
前記第2のエッチング工程後にレジスト剥離液を用いて前記レジストマスクを剥離することを特徴とする半導体装置の作製方法。 - 請求項1または請求項2において、
前記第1のエッチング工程は、主成分としてフッ素よりも塩素が多いガスを用いて行い、
前記第2のエッチング工程は、主成分として塩素よりもフッ素が多いガスを用いて行うことを特徴とする半導体装置の作製方法。 - 請求項3において、
前記第1のエッチング工程は、BCl3ガスとCl2ガスの混合ガスを用いて行うことを特徴とする半導体装置の作製方法。 - 請求項3または請求項4において、
前記第2のエッチング工程はSF6ガスを用いて行うことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項5のいずれか一において、
前記レジスト剥離液は、前記第2の導電膜を腐食させる薬液であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項6のいずれか一において、
前記第1の導電膜は、前記第3の導電膜よりも厚いことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項7のいずれか一において、
前記第2の導電膜を形成する導電性材料は、前記第1の導電膜及び前記第3の導電膜を形成する導電性材料よりも導電率が高く、
前記第2の導電膜は前記第1の導電膜及び前記第3の導電膜よりも厚いことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項8のいずれか一において、
前記第1の導電膜及び前記第3の導電膜はチタン膜であり、
前記第2の導電膜はアルミニウム膜であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項9のいずれか一において、
前記半導体層は酸化物半導体層であることを特徴とする半導体装置の作製方法。 - 請求項10において、
前記酸化物半導体層の材料はIGZOであることを特徴とする半導体装置の作製方法。
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Also Published As
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US20140327007A1 (en) | 2014-11-06 |
US20160300933A1 (en) | 2016-10-13 |
US20170229563A1 (en) | 2017-08-10 |
US9837513B2 (en) | 2017-12-05 |
KR101976206B1 (ko) | 2019-05-07 |
JP2019024135A (ja) | 2019-02-14 |
JP2016036039A (ja) | 2016-03-17 |
KR102212301B1 (ko) | 2021-02-03 |
TWI550720B (zh) | 2016-09-21 |
JP2017212454A (ja) | 2017-11-30 |
US9640642B2 (en) | 2017-05-02 |
TW201218280A (en) | 2012-05-01 |
US9379136B2 (en) | 2016-06-28 |
JP5825893B2 (ja) | 2015-12-02 |
JP6177853B2 (ja) | 2017-08-09 |
US20120012836A1 (en) | 2012-01-19 |
US8785241B2 (en) | 2014-07-22 |
KR20120008464A (ko) | 2012-01-30 |
KR20190047681A (ko) | 2019-05-08 |
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