JP2011501725A5 - - Google Patents

Download PDF

Info

Publication number
JP2011501725A5
JP2011501725A5 JP2010524817A JP2010524817A JP2011501725A5 JP 2011501725 A5 JP2011501725 A5 JP 2011501725A5 JP 2010524817 A JP2010524817 A JP 2010524817A JP 2010524817 A JP2010524817 A JP 2010524817A JP 2011501725 A5 JP2011501725 A5 JP 2011501725A5
Authority
JP
Japan
Prior art keywords
conductive
nanostructure
bonding film
nanostructures
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010524817A
Other languages
English (en)
Japanese (ja)
Other versions
JP5535915B2 (ja
JP2011501725A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/SE2008/000506 external-priority patent/WO2009035393A1/en
Publication of JP2011501725A publication Critical patent/JP2011501725A/ja
Publication of JP2011501725A5 publication Critical patent/JP2011501725A5/ja
Application granted granted Critical
Publication of JP5535915B2 publication Critical patent/JP5535915B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010524817A 2007-09-12 2008-09-10 ナノ構造体による隣接層の接続および接合 Active JP5535915B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US97185907P 2007-09-12 2007-09-12
US60/971,859 2007-09-12
US97404507P 2007-09-20 2007-09-20
US60/974,045 2007-09-20
PCT/SE2008/000506 WO2009035393A1 (en) 2007-09-12 2008-09-10 Connecting and bonding adjacent layers with nanostructures

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014090161A Division JP2014177398A (ja) 2007-09-12 2014-04-24 ナノ構造体による隣接層の接続および接合

Publications (3)

Publication Number Publication Date
JP2011501725A JP2011501725A (ja) 2011-01-13
JP2011501725A5 true JP2011501725A5 (OSRAM) 2012-10-25
JP5535915B2 JP5535915B2 (ja) 2014-07-02

Family

ID=40452247

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2010524817A Active JP5535915B2 (ja) 2007-09-12 2008-09-10 ナノ構造体による隣接層の接続および接合
JP2014090161A Pending JP2014177398A (ja) 2007-09-12 2014-04-24 ナノ構造体による隣接層の接続および接合
JP2015167487A Active JP6149077B2 (ja) 2007-09-12 2015-08-27 ナノ構造体による隣接層の接続および接合
JP2017099678A Pending JP2017199911A (ja) 2007-09-12 2017-05-19 ナノ構造体による隣接層の接続および接合

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2014090161A Pending JP2014177398A (ja) 2007-09-12 2014-04-24 ナノ構造体による隣接層の接続および接合
JP2015167487A Active JP6149077B2 (ja) 2007-09-12 2015-08-27 ナノ構造体による隣接層の接続および接合
JP2017099678A Pending JP2017199911A (ja) 2007-09-12 2017-05-19 ナノ構造体による隣接層の接続および接合

Country Status (8)

Country Link
US (4) US8106517B2 (OSRAM)
EP (1) EP2197782B1 (OSRAM)
JP (4) JP5535915B2 (OSRAM)
KR (1) KR101487346B1 (OSRAM)
CN (2) CN104600057B (OSRAM)
RU (1) RU2010114227A (OSRAM)
TW (3) TWI511208B (OSRAM)
WO (1) WO2009035393A1 (OSRAM)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2586744B1 (en) * 2005-04-25 2016-01-13 Smoltek AB Nanostructure and precursor formation on conducting substrate
US7777291B2 (en) 2005-08-26 2010-08-17 Smoltek Ab Integrated circuits having interconnects and heat dissipators based on nanostructures
KR101487346B1 (ko) 2007-09-12 2015-01-28 스몰텍 에이비 인접 층들을 나노구조들과 연결하고 결합하는 방법
JP5474835B2 (ja) * 2008-02-25 2014-04-16 スモルテック アーベー ナノ構造処理のための導電性補助層の形成及び選択的除去
US8568027B2 (en) 2009-08-26 2013-10-29 Ut-Battelle, Llc Carbon nanotube temperature and pressure sensors
US20110076841A1 (en) * 2009-09-30 2011-03-31 Kahen Keith B Forming catalyzed ii-vi semiconductor nanowires
KR101709959B1 (ko) * 2010-11-17 2017-02-27 삼성전자주식회사 범프 구조물, 이를 갖는 반도체 패키지 및 반도체 패키지의 제조 방법
TWI438930B (zh) * 2010-12-13 2014-05-21 Hon Hai Prec Ind Co Ltd 半導體發光晶片及其製造方法
TW201225341A (en) 2010-12-13 2012-06-16 Hon Hai Prec Ind Co Ltd Light-emitting semiconductor chip and method for manufacturing the same
CN102569623A (zh) * 2010-12-14 2012-07-11 鸿富锦精密工业（深圳）有限公司 半导体发光芯片及其制造方法
US8558209B1 (en) * 2012-05-04 2013-10-15 Micron Technology, Inc. Memory cells having-multi-portion data storage region
US9212960B2 (en) * 2012-10-22 2015-12-15 The Board Of Trustees Of The Leland Stanford Junior University Nanostructures with strain-induced resistance
US9249014B2 (en) * 2012-11-06 2016-02-02 Infineon Technologies Austria Ag Packaged nano-structured component and method of making a packaged nano-structured component
US20150333024A1 (en) * 2013-01-09 2015-11-19 Hitachi Ltd Semiconductor device and method for manufacturing the same
US8907479B2 (en) 2013-03-11 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Treating copper surfaces for packaging
US20160172327A1 (en) * 2013-06-21 2016-06-16 University Of Connecticut Low-Temperature Bonding and Sealing With Spaced Nanorods
US8912637B1 (en) 2013-09-23 2014-12-16 Texas Instruments Incorporated Self-adhesive die
US9453774B2 (en) 2013-12-17 2016-09-27 The Board Of Trustees Of The Leland Stanford Junior University Surface area-based pressure sensing
KR20160122172A (ko) 2014-02-13 2016-10-21 허니웰 인터내셔날 인코포레이티드 압축성 열전도 재료
US10329435B2 (en) 2014-07-01 2019-06-25 University Of Utah Research Foundation Electrothermal coating with nanostructures mixture and method for making the same
US10722174B2 (en) 2014-07-11 2020-07-28 The Board Of Trustees Of The Leland Stanford Junior University Skin-conformal sensors
US9625330B2 (en) 2014-08-01 2017-04-18 The Board Of Trustees Of The Leland Stanford Junior University Methods and apparatus concerning multi-tactile sensitive (E-skin) pressure sensors
US9397023B2 (en) * 2014-09-28 2016-07-19 Texas Instruments Incorporated Integration of heat spreader for beol thermal management
US10002826B2 (en) 2014-10-27 2018-06-19 Taiwan Semiconductor Manufacturing Company Semiconductor device structure with conductive pillar and conductive line and method for forming the same
JP6165127B2 (ja) * 2014-12-22 2017-07-19 三菱重工工作機械株式会社 半導体装置及び半導体装置の製造方法
US9544998B1 (en) 2015-09-14 2017-01-10 The Boeing Company Growth of carbon nanotube (CNT) leads on circuits in substrate-free continuous chemical vapor deposition (CVD) process
US20170162536A1 (en) 2015-12-03 2017-06-08 International Business Machines Corporation Nanowires for pillar interconnects
MX393621B (es) 2016-03-08 2025-03-24 Honeywell Int Inc Material de camibo de fase.
EP3468791B1 (en) 2016-06-10 2020-06-24 Lintec Of America, Inc. Nanofiber sheet
DE102016220664A1 (de) * 2016-10-21 2018-04-26 Robert Bosch Gmbh Verbindungsmittel zum Verbinden der Anschlüsse eines integrierten Schaltkreises oder eines diskreten Halbleiters
WO2018156878A1 (en) 2017-02-24 2018-08-30 Lintec Of America, Inc. Nanofiber thermal interface material
US10381049B2 (en) * 2017-08-14 2019-08-13 Seagate Technology Llc Data storage device housing components having a polymeric element attached to a surface thereof
US11041103B2 (en) 2017-09-08 2021-06-22 Honeywell International Inc. Silicone-free thermal gel
CA2985254A1 (en) * 2017-11-14 2019-05-14 Vuereal Inc Integration and bonding of micro-devices into system substrate
WO2019118706A1 (en) 2017-12-13 2019-06-20 Analog Devices, Inc. Structural electronics wireless sensor nodes
JP6982308B2 (ja) * 2017-12-27 2021-12-17 株式会社ソフイア 遊技機
US10177058B1 (en) 2018-01-26 2019-01-08 Powertech Technology Inc. Encapsulating composition, semiconductor package and manufacturing method thereof
US11072706B2 (en) 2018-02-15 2021-07-27 Honeywell International Inc. Gel-type thermal interface material
US10833048B2 (en) * 2018-04-11 2020-11-10 International Business Machines Corporation Nanowire enabled substrate bonding and electrical contact formation
CN109796903B (zh) * 2019-03-08 2024-06-21 深圳市润沃自动化工程有限公司 一种异向性导电胶结构及其生产方法
US11195811B2 (en) * 2019-04-08 2021-12-07 Texas Instruments Incorporated Dielectric and metallic nanowire bond layers
US11373921B2 (en) 2019-04-23 2022-06-28 Honeywell International Inc. Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing
GB201906936D0 (en) * 2019-05-16 2019-07-03 Quantum Motion Tech Limited Processor element for quantum information processor
DE102020116671A1 (de) 2020-06-24 2021-12-30 Nanowired Gmbh Waferbonding
CN214176013U (zh) * 2020-12-23 2021-09-10 迪科特测试科技(苏州)有限公司 半导体结构
CN113964096B (zh) * 2021-10-21 2025-06-06 广东佛智芯微电子技术研究有限公司 一种高集成密度的芯片互连结构、封装结构及封装方法
US20230343673A1 (en) * 2022-04-25 2023-10-26 Micron Technology, Inc. Methods and apparatus for integrating carbon nanofiber into semiconductor devices using w2w fusion bonding

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5445895A (en) * 1977-09-17 1979-04-11 Toshiba Machine Co Ltd Saw with set wrest and automatic jigsaw having same
JPS6386458A (ja) * 1986-09-30 1988-04-16 Toshiba Corp バンプ付ｉｃチツプの製造方法、及び製造用ウエハ
US5818700A (en) * 1996-09-24 1998-10-06 Texas Instruments Incorporated Microelectronic assemblies including Z-axis conductive films
JP3372848B2 (ja) 1996-10-31 2003-02-04 キヤノン株式会社 電子放出素子及び画像表示装置及びそれらの製造方法
JP3740295B2 (ja) 1997-10-30 2006-02-01 キヤノン株式会社 カーボンナノチューブデバイス、その製造方法及び電子放出素子
JP3497740B2 (ja) 1998-09-09 2004-02-16 株式会社東芝 カーボンナノチューブの製造方法及び電界放出型冷陰極装置の製造方法
US6146227A (en) 1998-09-28 2000-11-14 Xidex Corporation Method for manufacturing carbon nanotubes as functional elements of MEMS devices
US6283812B1 (en) * 1999-01-25 2001-09-04 Agere Systems Guardian Corp. Process for fabricating article comprising aligned truncated carbon nanotubes
US6331209B1 (en) * 1999-04-21 2001-12-18 Jin Jang Method of forming carbon nanotubes
JP4078760B2 (ja) * 1999-07-23 2008-04-23 株式会社村田製作所 チップ型電子部品の製造方法
US6813017B1 (en) * 1999-10-20 2004-11-02 Becton, Dickinson And Company Apparatus and method employing incoherent light emitting semiconductor devices as particle detection light sources in a flow cytometer
US6213789B1 (en) * 1999-12-15 2001-04-10 Xerox Corporation Method and apparatus for interconnecting devices using an adhesive
US6297592B1 (en) 2000-08-04 2001-10-02 Lucent Technologies Inc. Microwave vacuum tube device employing grid-modulated cold cathode source having nanotube emitters
JP2002117791A (ja) 2000-10-06 2002-04-19 Hitachi Ltd 画像表示装置
FR2815026B1 (fr) 2000-10-06 2004-04-09 Commissariat Energie Atomique Procede d'auto-organisation de microstructures ou de nanostructures et dispositif a microstructures ou a nanostructures
JP2002141633A (ja) * 2000-10-25 2002-05-17 Lucent Technol Inc 垂直にナノ相互接続された回路デバイスからなる製品及びその製造方法
JP2002203473A (ja) 2000-11-01 2002-07-19 Sony Corp 冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置
JP2002289086A (ja) 2001-03-27 2002-10-04 Canon Inc 電子放出素子、電子源、画像形成装置、及び電子放出素子の製造方法
US6737939B2 (en) * 2001-03-30 2004-05-18 California Institute Of Technology Carbon nanotube array RF filter
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
DE10127351A1 (de) * 2001-06-06 2002-12-19 Infineon Technologies Ag Elektronischer Chip und elektronische Chip-Anordnung
US6739932B2 (en) 2001-06-07 2004-05-25 Si Diamond Technology, Inc. Field emission display using carbon nanotubes and methods of making the same
KR100470227B1 (ko) 2001-06-07 2005-02-05 두산디앤디 주식회사 화학기계적 연마장치의 캐리어 헤드
JP4778667B2 (ja) * 2001-06-29 2011-09-21 富士通株式会社 アンダーフィル用シート材、半導体チップのアンダーフィル方法および半導体チップの実装方法
US6982519B2 (en) 2001-09-18 2006-01-03 Ut-Battelle Llc Individually electrically addressable vertically aligned carbon nanofibers on insulating substrates
JP2003115257A (ja) 2001-10-03 2003-04-18 Sony Corp 冷陰極電界電子放出素子の製造方法、及び、冷陰極電界電子放出表示装置の製造方法
JP2003115259A (ja) 2001-10-03 2003-04-18 Sony Corp 電子放出装置及びその製造方法、冷陰極電界電子放出素子及びその製造方法、冷陰極電界電子放出表示装置及びその製造方法、並びに、薄膜のエッチング方法
WO2003049132A1 (en) 2001-12-06 2003-06-12 Pioneer Corporation Electron emitting device and method of manufacturing the same and display apparatus using the same
US6965513B2 (en) * 2001-12-20 2005-11-15 Intel Corporation Carbon nanotube thermal interface structures
SE0104452D0 (sv) 2001-12-28 2001-12-28 Forskarpatent I Vaest Ab Metod för framställning av nanostrukturer in-situ, och in-situ framställda nanostrukturer
FR2836280B1 (fr) 2002-02-19 2004-04-02 Commissariat Energie Atomique Structure de cathode a couche emissive formee sur une couche resistive
US6858197B1 (en) 2002-03-13 2005-02-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Controlled patterning and growth of single wall and multi-wall carbon nanotubes
JP4120918B2 (ja) * 2002-03-18 2008-07-16 富士通株式会社 柱状カーボン構造物の選択成長方法及び電子デバイス
SE0200868D0 (sv) 2002-03-20 2002-03-20 Chalmers Technology Licensing Theoretical model för a nanorelay and same relay
US6699779B2 (en) 2002-03-22 2004-03-02 Hewlett-Packard Development Company, L.P. Method for making nanoscale wires and gaps for switches and transistors
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US6831017B1 (en) * 2002-04-05 2004-12-14 Integrated Nanosystems, Inc. Catalyst patterning for nanowire devices
US7465494B2 (en) * 2002-04-29 2008-12-16 The Trustees Of Boston College Density controlled carbon nanotube array electrodes
FR2839505B1 (fr) 2002-05-07 2005-07-15 Univ Claude Bernard Lyon Procede pour modifier les proprietes d'une couche mince et substrat faisant application du procede
US6774052B2 (en) 2002-06-19 2004-08-10 Nantero, Inc. Method of making nanotube permeable base transistor
JP3890470B2 (ja) 2002-07-16 2007-03-07 日立造船株式会社 カーボンナノチューブを用いた電子放出素子用電極材料およびその製造方法
JP3892359B2 (ja) * 2002-07-25 2007-03-14 松下電器産業株式会社 半導体チップの実装方法
WO2004012932A1 (en) 2002-08-01 2004-02-12 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University Method for synthesizing nanoscale structures in defined locations
US20040037972A1 (en) 2002-08-22 2004-02-26 Kang Simon Patterned granulized catalyst layer suitable for electron-emitting device, and associated fabrication method
US7175494B1 (en) 2002-08-22 2007-02-13 Cdream Corporation Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device
JP5226174B2 (ja) 2002-11-05 2013-07-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ナノ構造体、そのようなナノ構造体を有する電子機器およびナノ構造体を調製する方法
CN1239387C (zh) 2002-11-21 2006-02-01 清华大学 碳纳米管阵列及其生长方法
WO2004051726A1 (ja) * 2002-11-29 2004-06-17 Nec Corporation 半導体装置およびその製造方法
US6984535B2 (en) 2002-12-20 2006-01-10 Cdream Corporation Selective etching of a protective layer to form a catalyst layer for an electron-emitting device
JP2004202602A (ja) 2002-12-24 2004-07-22 Sony Corp 微小構造体の製造方法、及び型材の製造方法
JP2004261875A (ja) 2003-01-09 2004-09-24 Sony Corp 転写用原盤の製造方法および転写用原盤、ならびに基板の製造方法および基板
US6764874B1 (en) 2003-01-30 2004-07-20 Motorola, Inc. Method for chemical vapor deposition of single walled carbon nanotubes
US7316061B2 (en) * 2003-02-03 2008-01-08 Intel Corporation Packaging of integrated circuits with carbon nano-tube arrays to enhance heat dissipation through a thermal interface
WO2004079450A1 (en) 2003-03-06 2004-09-16 Yissum Research Development Company Of The Hebrew University Of Jerusalem Method for manufacturing a patterned structure
JP4401094B2 (ja) * 2003-03-20 2010-01-20 富士通株式会社 炭素元素円筒型構造体へのオーミック接続構造及びその作製方法
US20040182600A1 (en) 2003-03-20 2004-09-23 Fujitsu Limited Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof
CN100419943C (zh) 2003-04-03 2008-09-17 清华大学 一种场发射显示装置
JP4701161B2 (ja) 2003-04-04 2011-06-15 キューナノ エービー 正確に位置決めされたナノウィスカおよびナノウィスカアレイ、およびそれらを作成する方法
SE0301236D0 (sv) 2003-04-28 2003-04-28 Chalmers Technology Licensing Method of manufacturing a nanoscale conductive device
KR100554155B1 (ko) 2003-06-09 2006-02-22 학교법인 포항공과대학교 금속/반도체 나노막대 이종구조를 이용한 전극 구조물 및그 제조 방법
KR100537512B1 (ko) 2003-09-01 2005-12-19 삼성에스디아이 주식회사 카본나노튜브구조체 및 이의 제조방법 그리고 이를 응용한전계방출소자 및 표시장치
JP4689218B2 (ja) 2003-09-12 2011-05-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2005116469A (ja) 2003-10-10 2005-04-28 Sony Corp 冷陰極電界電子放出素子の製造方法
JP4271544B2 (ja) * 2003-10-10 2009-06-03 リンテック株式会社 半導体装置の製造方法
US7459839B2 (en) 2003-12-05 2008-12-02 Zhidan Li Tolt Low voltage electron source with self aligned gate apertures, and luminous display using the electron source
JP2007525830A (ja) 2003-12-22 2007-09-06 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体ナノワイヤ群の製作及びナノワイヤ群を備える電子デバイス
TWI234211B (en) * 2003-12-26 2005-06-11 Advanced Semiconductor Eng Method for forming an underfilling layer on a bumped wafer
JP4184306B2 (ja) 2004-03-18 2008-11-19 パイオニア株式会社 電子放出素子
JP4448356B2 (ja) 2004-03-26 2010-04-07 富士通株式会社 半導体装置およびその製造方法
CN100383213C (zh) * 2004-04-02 2008-04-23 清华大学 一种热界面材料及其制造方法
US20060086994A1 (en) 2004-05-14 2006-04-27 Susanne Viefers Nanoelectromechanical components
US20050285116A1 (en) * 2004-06-29 2005-12-29 Yongqian Wang Electronic assembly with carbon nanotube contact formations or interconnections
JP2006108649A (ja) 2004-09-09 2006-04-20 Masaru Hori ナノインプリント用金型、ナノパターンの形成方法及び樹脂成型物
WO2006137893A2 (en) 2004-10-01 2006-12-28 Board Of Regents Of The University Of Texas System Polymer-free carbon nanotube assemblies (fibers, ropes, ribbons, films)
FR2876244B1 (fr) * 2004-10-04 2007-01-26 Commissariat Energie Atomique Composant muni d'un ensemble de micropointes conductrices dures et procede de connexion electrique entre ce composant et un composant muni de protuberances conductrices ductiles
TWI463615B (zh) * 2004-11-04 2014-12-01 台灣積體電路製造股份有限公司 以奈米管為基礎之具方向性導電黏著
US7772125B2 (en) 2005-02-10 2010-08-10 Panasonic Corporation Structure in which cylindrical microstructure is maintained in anisotropic groove, method for fabricating the same, and semiconductor device, TFT driving circuit, panel, display and sensor using the structure in which cylindrical microstructure is maintained in anisotropic groove
KR100682863B1 (ko) 2005-02-19 2007-02-15 삼성에스디아이 주식회사 탄소나노튜브 구조체 및 그 제조방법과, 탄소나노튜브 구조체를 이용한 전계방출소자 및 그 제조방법
WO2006098026A1 (ja) * 2005-03-17 2006-09-21 Fujitsu Limited 接続機構、半導体パッケージ、およびその製造方法
KR101145146B1 (ko) 2005-04-07 2012-05-14 엘지디스플레이 주식회사 박막트랜지스터와 그 제조방법
EP2586744B1 (en) 2005-04-25 2016-01-13 Smoltek AB Nanostructure and precursor formation on conducting substrate
US7402909B2 (en) * 2005-04-28 2008-07-22 Intel Corporation Microelectronic package interconnect and method of fabrication thereof
WO2007053202A2 (en) 2005-06-17 2007-05-10 Georgia Tech Research Corporation Systems and methods for nanomaterial transfer
JP4386012B2 (ja) * 2005-08-23 2009-12-16 株式会社デンソー バンプ接合体の製造方法
RU2008111514A (ru) 2005-08-26 2009-10-10 Смольтек Аб (Se) Межсоединения и теплорассеиватели на основе наноструктур
US7777291B2 (en) * 2005-08-26 2010-08-17 Smoltek Ab Integrated circuits having interconnects and heat dissipators based on nanostructures
JP4855757B2 (ja) * 2005-10-19 2012-01-18 富士通株式会社 カーボンナノチューブパッド及び電子デバイス
KR100745734B1 (ko) * 2005-12-13 2007-08-02 삼성에스디아이 주식회사 탄소나노튜브의 형성방법 및 이를 이용한 전계방출소자의제조방법
US7371674B2 (en) * 2005-12-22 2008-05-13 Intel Corporation Nanostructure-based package interconnect
US8337979B2 (en) * 2006-05-19 2012-12-25 Massachusetts Institute Of Technology Nanostructure-reinforced composite articles and methods
JP4744360B2 (ja) * 2006-05-22 2011-08-10 富士通株式会社 半導体装置
KR100803194B1 (ko) 2006-06-30 2008-02-14 삼성에스디아이 주식회사 탄소나노튜브 구조체 형성방법
WO2008054283A1 (en) 2006-11-01 2008-05-08 Smoltek Ab Photonic crystals based on nanostructures
JP4870048B2 (ja) * 2007-08-20 2012-02-08 富士通株式会社 電子部品装置及びその製造方法
KR101487346B1 (ko) 2007-09-12 2015-01-28 스몰텍 에이비 인접 층들을 나노구조들과 연결하고 결합하는 방법
JP5474835B2 (ja) 2008-02-25 2014-04-16 スモルテック アーベー ナノ構造処理のための導電性補助層の形成及び選択的除去

Similar Documents

Publication Publication Date Title
JP2011501725A5 (OSRAM)
RU2010114227A (ru) Соединение и связывание соседних слоев наноструктурами
CN101054467B (zh) 碳纳米管复合材料及其制备方法
TWI581355B (zh) 轉置微元件的方法
TWI445183B (zh) 肖特基二極體及其製備方法
US8367434B2 (en) Method for fabricating a nanostructured substrate for OLED and method for fabricating an OLED
Sharma et al. Flexible and stretchable oxide electronics
US20140141195A1 (en) FIXED ARRAY ACFs WITH MULTI-TIER PARTIALLY EMBEDDED PARTICLE MORPHOLOGY AND THEIR MANUFACTURING PROCESSES
JP2013120835A5 (OSRAM)
JP2010033793A (ja) 粒子転写膜の製造方法
CN110416139A (zh) 一种转移载板、其制作方法及发光二极管芯片的转移方法
JP2011091297A5 (OSRAM)
WO2007084572A3 (en) Thermal interconnect and interface systems, methods of production and uses thereof
WO2018192389A1 (zh) 一种用于微元件转移的转置头
JP2010506400A5 (OSRAM)
JP2013530064A5 (OSRAM)
CN105419630A (zh) 一种用于oca光学胶的离型膜及其制备方法
JP2009537970A5 (OSRAM)
TWI487033B (zh) 製備奈米碳管薄膜及薄膜電晶體的方法
JP2012525719A5 (OSRAM)
EP2148365A3 (en) Semiconductor device and manufacturing method thereof
Logeeswaran et al. Harvesting and transferring vertical pillar arrays of single-crystal semiconductor devices to arbitrary substrates
KR101942967B1 (ko) 실록산계 단량체를 이용한 접합 기판 구조체 및 그 제조방법
TWI783008B (zh) 黏著構件及黏著構件的製造方法
JP2008311665A5 (OSRAM)