JP2011501725A - ナノ構造体による隣接層の接続および接合 - Google Patents
ナノ構造体による隣接層の接続および接合 Download PDFInfo
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- JP2011501725A JP2011501725A JP2010524817A JP2010524817A JP2011501725A JP 2011501725 A JP2011501725 A JP 2011501725A JP 2010524817 A JP2010524817 A JP 2010524817A JP 2010524817 A JP2010524817 A JP 2010524817A JP 2011501725 A JP2011501725 A JP 2011501725A
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- nanostructures
- conductive surface
- nanostructure
- pads
- conductive
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Abstract
Description
本出願は、参照により本明細書に組み込む2007年9月12日出願の米国仮特許出願第60/971,859号、および2007年9月20日出願の米国仮特許出願第60/974,045号の優先権の利益を主張する。
本明細書に記載の工程によって生成される装置は、ナノ構造体が担体内部に埋め込まれた担体を備え、このナノ構造体は、特定の形状および機能を有するように成長させた。ナノ構造体は、おおよそ互いに平行であり、また基板に対して垂直になるように方向付けられる。ナノ構造体は、概ね所望の長さまたは高さを有する。
この実施例は、2つの面/層(第1のダイまたはチップの接触面/層と、第2のダイまたはチップの、第1のものが装着される接触層/面との間など)を接続する方法を提示する。この接続は、1mmから2nmの範囲のいずれかのピッチで、通常は電気的/熱的接触要素がナノ構造体に基づく20nmまでのピッチで、接合および電気的/熱的接触させることにより行われる。
垂直に並べられたナノ構造体(NS)(互いに平行で、両担体面に対して垂直であり、実施例1に記載のステップで用意されたものなど)を含む担体(可撓性、ポリイミド、または固い材料をベースとすることができる)が、ダイの表面と接触面の間に置かれる。例として図2および図4を参照されたい。
この実施例は、電子回路のI/O点上にナノ構造体のマトリクスを成長させることによってどのようにウェハレベルバンプを実現し、それによってダイの電子アセンブリを生成するかを示す。この方法は、1cmから2nmの範囲の任意のピッチで、通常は電気的/熱的接触要素がナノ構造体に基づく1μmまでの範囲のピッチで、接合し、かつ電気的および/または熱的に接触させることにより、2つの面/層(ダイまたはチップの接触面/層、および第1層が接続されるダイまたはチップの接触面/層)を接続する方法とすることもできる。
Claims (9)
- 第1導電面と、
第2導電面と、
2つ以上のナノ構造体と
を備える装置であって、
前記2つ以上のナノ構造体のそれぞれが、前記2つ以上のナノ構造体の他の構造体と平行であり、
前記2つ以上のナノ構造体が、互いに混じり合った2つ以上の材料を含み、前記互いに混じり合った2つ以上の材料が、前記2つ以上のナノ構造体の形状に影響を及ぼす少なくとも1つの材料と、前記第1導電面の間の境界面の電気的特性に影響を及ぼす少なくとも1つの材料とを含み、
前記2つ以上のナノ構造体のそれぞれの第1端部と、前記第1導電面との間に第1接合部が存在し、
前記2つ以上のナノ構造体が前記第1導電面に垂直であり、
前記2つ以上のナノ構造体のそれぞれの第2端部と、前記第2導電面との間に第2接合部が存在し、前記2つ以上のナノ構造体が前記第2導電面に垂直である、装置。 - 担体をさらに備え、前記2つ以上のナノ構造体が前記担体中に埋め込まれる、請求項1に記載の装置。
- 前記第1接合部および前記第2接合部が、前記担体を硬化させることによって生成される、請求項2に記載の装置。
- 前記担体を硬化させることにより担体が収縮し、それによって前記2つ以上のナノ構造体を圧縮し、かつ前記2つ以上のナノ構造体のそれぞれの第1端部を前記第1導電面に押し付けるとともに前記2つ以上のナノ構造体のそれぞれの第2端部を前記第2導電面に押し付けるばね荷重力が生成される、請求項3に記載の装置。
- 前記互いに混じり合った2つ以上の材料のうちの少なくとも1つの材料が、非結晶質シリコンおよびゲルマニウムからなる群より選択される、請求項1に記載の装置。
- ナノ構造体アセンブリを使用して第1導電面を第2導電面に接続する方法であって、
1つまたは複数の中間層を導電基板上に堆積するステップであって、前記複数の中間層のうちの少なくとも1つが、非結晶質シリコンおよびゲルマニウムからなる群より選択された材料を含むステップと、
前記1つまたは複数の中間層上に触媒層を堆積するステップと、
前記基板を最初にアニールすることなく、ナノ構造体を形成できる温度まで前記基板を加熱するステップと、
前記温度で前記触媒層上に2つ以上のナノ構造体を成長させるステップであって、前記1つまたは複数の中間層のうちの少なくとも1つが前記触媒層と相互に混じり合い、相互に混じり合った前記触媒層と、前記1つまたは複数の中間層のうちの少なくとも1つとが、前記ナノ構造体中に存在するステップと
を含む、
ナノ構造体アセンブリを生成するステップ、
前記ナノ構造体アセンブリを接着性ポリマーで被覆し、埋込みナノ構造体を有する膜を形成するステップ、
前記膜を研磨して、前記ナノ構造体アセンブリの前記2つ以上のナノ構造体に均一な所望の長さを得るステップ、
前記膜をダイシングして1つまたは複数の個別パッドを生成するステップ、
前記パッドを前記導電基板から引き上げるステップ、
前記第1導電面と前記第2導電面との間に前記1つまたは複数のパッドを挿入するステップ、ならびに
前記1つまたは複数のパッドを硬化させ、それによって前記第1導電面を前記1つまたは複数のパッドの第1面に接合し、前記第2導電面を前記1つまたは複数のパッドの第2面に接合するステップ
を含む方法。 - 前記第1導電面を前記1つまたは複数のパッドの第1面に接合し、前記第2導電面を前記1つまたは複数のパッドの第2面に接合することにより、前記パッド中に埋め込まれた前記ナノ構造体を用いて、前記第1導電面と前記第2導電面の間に電気接点または熱接点を生成する、請求項6に記載の方法。
- ナノ構造体アセンブリを使用して第1導電面を第2導電面に接続する方法であって、
1つまたは複数の中間層を導電基板上に堆積するステップであって、前記複数の中間層のうちの少なくとも1つが、非結晶質シリコンおよびゲルマニウムからなる群より選択された材料を含むステップと、
前記1つまたは複数の中間層上に触媒層を堆積するステップと、
前記基板を最初にアニールすることなく、ナノ構造体を形成できる温度まで前記基板を加熱するステップと、
前記温度で前記触媒層上に2つ以上のナノ構造体を成長させるステップであって、前記1つまたは複数の中間層のうちの少なくとも1つが前記触媒層と相互に混じり合い、相互に混じり合った前記触媒層と、前記1つまたは複数の中間層のうちの少なくとも1つとが、前記ナノ構造体中に存在するステップと
を含む、
ナノ構造体アセンブリを生成するステップ、
前記ナノ構造体アセンブリを接着性ポリマーで被覆し、埋込みナノ構造体を有する膜を前記第1導電面上に形成するステップ、
前記ナノ構造体アセンブリを接着性ポリマーで被覆し、埋込みナノ構造体を有する膜を形成するステップ、
前記膜および前記第1導電面をダイシングして、それぞれが前記膜の区域および前記第1導電面の区域を備える1つまたは複数の個別パッドを生成するステップ、
1つまたは複数のパッドを前記第2導電面に適用するステップ、ならびに
前記1つまたは複数のパッドを硬化させ、それによって前記第2導電面を前記1つまたは複数のパッドの1つの表面に接合するステップ
を含む方法。 - ナノ構造体アセンブリを使用して第1導電面を第2導電面に接続する方法であって、
1つまたは複数の中間層を堆積するステップと、
前記1つまたは複数の中間層上に触媒層を堆積するステップと、
前記基板を最初にアニールすることなく、ナノ構造体を形成できる温度まで前記基板を加熱するステップと、
前記温度で前記触媒層上に2つ以上のナノ構造体を成長させるステップであって、前記1つまたは複数の中間層のうちの少なくとも1つが前記触媒層と相互に混じり合い、相互に混じり合った前記触媒層と、前記1つまたは複数の中間層のうちの少なくとも1つとが、前記ナノ構造体中に存在するステップと、
前記ナノ構造体を金属堆積物で被覆し、前記第1導電面上に金属埋込みナノ構造体を形成するステップと
を含む、
ナノ構造体アセンブリを生成するステップ、
前記ナノ構造体アセンブリを接着性ポリマーで被覆し、埋込みナノ構造体を有する膜を前記第1導電面に形成するステップ、
前記膜を研磨して前記ナノ構造体アセンブリの前記2つ以上のナノ構造体に均一な所望の長さを得るステップ、
前記膜および前記第1導電面をダイシングして、それぞれが前記膜の区域および前記第1導電面の区域を備える1つまたは複数の個別パッドを生成するステップ、
1つまたは複数のパッドを前記第2導電面に適用するステップ、ならびに
前記1つまたは複数のパッドを硬化させ、それによって前記第2導電面を前記1つまたは複数のパッドの1つの表面に接合するステップ
を含む方法。
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RU2010114227A (ru) | 2011-10-20 |
CN101827782A (zh) | 2010-09-08 |
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EP2197782B1 (en) | 2020-03-04 |
CN101827782B (zh) | 2014-12-10 |
JP2016006902A (ja) | 2016-01-14 |
US20120301607A1 (en) | 2012-11-29 |
JP5535915B2 (ja) | 2014-07-02 |
US8106517B2 (en) | 2012-01-31 |
JP2017199911A (ja) | 2017-11-02 |
WO2009035393A1 (en) | 2009-03-19 |
US8253253B2 (en) | 2012-08-28 |
KR20100063063A (ko) | 2010-06-10 |
US20090072408A1 (en) | 2009-03-19 |
US20140360661A1 (en) | 2014-12-11 |
TW200913105A (en) | 2009-03-16 |
KR101487346B1 (ko) | 2015-01-28 |
JP2014177398A (ja) | 2014-09-25 |
TWI564980B (zh) | 2017-01-01 |
CN104600057A (zh) | 2015-05-06 |
TWI655695B (zh) | 2019-04-01 |
JP6149077B2 (ja) | 2017-06-14 |
EP2197782A1 (en) | 2010-06-23 |
TWI511208B (zh) | 2015-12-01 |
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