JP2011119713A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2011119713A
JP2011119713A JP2010246939A JP2010246939A JP2011119713A JP 2011119713 A JP2011119713 A JP 2011119713A JP 2010246939 A JP2010246939 A JP 2010246939A JP 2010246939 A JP2010246939 A JP 2010246939A JP 2011119713 A JP2011119713 A JP 2011119713A
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Japan
Prior art keywords
electrode
transistor
source
drain electrode
oxide semiconductor
Prior art date
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JP2010246939A
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English (en)
Japanese (ja)
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JP2011119713A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Jun Koyama
潤 小山
Kiyoshi Kato
清 加藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2010246939A priority Critical patent/JP2011119713A/ja
Publication of JP2011119713A publication Critical patent/JP2011119713A/ja
Publication of JP2011119713A5 publication Critical patent/JP2011119713A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/4016—Memory devices with silicon-on-insulator cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
  • General Engineering & Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2010246939A 2009-11-06 2010-11-03 半導体装置 Withdrawn JP2011119713A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010246939A JP2011119713A (ja) 2009-11-06 2010-11-03 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009255448 2009-11-06
JP2009255448 2009-11-06
JP2010246939A JP2011119713A (ja) 2009-11-06 2010-11-03 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2013104195A Division JP5723922B2 (ja) 2009-11-06 2013-05-16 半導体装置
JP2015075550A Division JP2015164198A (ja) 2009-11-06 2015-04-02 半導体装置

Publications (2)

Publication Number Publication Date
JP2011119713A true JP2011119713A (ja) 2011-06-16
JP2011119713A5 JP2011119713A5 (enExample) 2013-12-12

Family

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Family Applications (12)

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JP2010246939A Withdrawn JP2011119713A (ja) 2009-11-06 2010-11-03 半導体装置
JP2013104195A Active JP5723922B2 (ja) 2009-11-06 2013-05-16 半導体装置
JP2015075550A Withdrawn JP2015164198A (ja) 2009-11-06 2015-04-02 半導体装置
JP2016203518A Withdrawn JP2017017357A (ja) 2009-11-06 2016-10-17 半導体装置
JP2018105998A Withdrawn JP2018152601A (ja) 2009-11-06 2018-06-01 半導体装置
JP2020083210A Active JP6824459B2 (ja) 2009-11-06 2020-05-11 半導体装置
JP2021002661A Active JP7003307B2 (ja) 2009-11-06 2021-01-12 半導体装置
JP2021214097A Active JP7041790B1 (ja) 2009-11-06 2021-12-28 半導体装置
JP2022037924A Active JP7093903B2 (ja) 2009-11-06 2022-03-11 半導体装置
JP2022098676A Active JP7326544B2 (ja) 2009-11-06 2022-06-20 半導体装置
JP2023125940A Active JP7592801B2 (ja) 2009-11-06 2023-08-02 半導体装置
JP2024202321A Active JP7765590B2 (ja) 2009-11-06 2024-11-20 半導体装置

Family Applications After (11)

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JP2013104195A Active JP5723922B2 (ja) 2009-11-06 2013-05-16 半導体装置
JP2015075550A Withdrawn JP2015164198A (ja) 2009-11-06 2015-04-02 半導体装置
JP2016203518A Withdrawn JP2017017357A (ja) 2009-11-06 2016-10-17 半導体装置
JP2018105998A Withdrawn JP2018152601A (ja) 2009-11-06 2018-06-01 半導体装置
JP2020083210A Active JP6824459B2 (ja) 2009-11-06 2020-05-11 半導体装置
JP2021002661A Active JP7003307B2 (ja) 2009-11-06 2021-01-12 半導体装置
JP2021214097A Active JP7041790B1 (ja) 2009-11-06 2021-12-28 半導体装置
JP2022037924A Active JP7093903B2 (ja) 2009-11-06 2022-03-11 半導体装置
JP2022098676A Active JP7326544B2 (ja) 2009-11-06 2022-06-20 半導体装置
JP2023125940A Active JP7592801B2 (ja) 2009-11-06 2023-08-02 半導体装置
JP2024202321A Active JP7765590B2 (ja) 2009-11-06 2024-11-20 半導体装置

Country Status (6)

Country Link
US (3) US8289753B2 (enExample)
JP (12) JP2011119713A (enExample)
KR (2) KR101824854B1 (enExample)
CN (2) CN104600074A (enExample)
TW (2) TWI517159B (enExample)
WO (1) WO2011055669A1 (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013033974A (ja) * 2009-11-13 2013-02-14 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013102133A (ja) * 2011-09-21 2013-05-23 Semiconductor Energy Lab Co Ltd 半導体記憶装置
JP2013138191A (ja) * 2011-12-01 2013-07-11 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013201429A (ja) * 2012-02-23 2013-10-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
KR20130121730A (ko) * 2012-04-27 2013-11-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 lsi
JP2014199708A (ja) * 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP2015156640A (ja) * 2014-01-17 2015-08-27 株式会社半導体エネルギー研究所 情報処理装置およびその駆動方法
JP2016110688A (ja) * 2014-12-01 2016-06-20 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
JP2018152152A (ja) * 2016-09-12 2018-09-27 株式会社半導体エネルギー研究所 記憶装置とその動作方法、並びに半導体装置、電子部品および電子機器
JP2020004474A (ja) * 2014-11-21 2020-01-09 株式会社半導体エネルギー研究所 半導体装置
JP2021184497A (ja) * 2011-03-11 2021-12-02 株式会社半導体エネルギー研究所 半導体装置
JP2023062011A (ja) * 2012-05-25 2023-05-02 株式会社半導体エネルギー研究所 半導体装置
JP2023075106A (ja) * 2016-03-10 2023-05-30 株式会社半導体エネルギー研究所 半導体装置の演算方法
JP2023093607A (ja) * 2011-07-22 2023-07-04 株式会社半導体エネルギー研究所 半導体装置

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KR20220153647A (ko) 2009-10-29 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101761432B1 (ko) 2009-11-06 2017-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102668063B (zh) 2009-11-20 2015-02-18 株式会社半导体能源研究所 半导体装置
WO2011062042A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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CN102804360B (zh) 2009-12-25 2014-12-17 株式会社半导体能源研究所 半导体装置
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JP5743790B2 (ja) * 2010-08-06 2015-07-01 株式会社半導体エネルギー研究所 半導体装置
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
US8581625B2 (en) * 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP6013682B2 (ja) * 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
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US9166055B2 (en) * 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
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JP2013229013A (ja) 2012-03-29 2013-11-07 Semiconductor Energy Lab Co Ltd アレイコントローラ及びストレージシステム
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JP2014192320A (ja) * 2013-03-27 2014-10-06 Sony Corp 撮像装置および撮像表示システム
JP6111458B2 (ja) * 2013-03-28 2017-04-12 株式会社Ｊｏｌｅｄ 半導体装置、表示装置および電子機器
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