JP2011086840A5 - - Google Patents

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Publication number
JP2011086840A5
JP2011086840A5 JP2009239867A JP2009239867A JP2011086840A5 JP 2011086840 A5 JP2011086840 A5 JP 2011086840A5 JP 2009239867 A JP2009239867 A JP 2009239867A JP 2009239867 A JP2009239867 A JP 2009239867A JP 2011086840 A5 JP2011086840 A5 JP 2011086840A5
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JP
Japan
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region
fluorine
semiconductor
trench
forming
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JP2009239867A
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English (en)
Japanese (ja)
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JP2011086840A (ja
JP5629450B2 (ja
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Priority to JP2009239867A priority Critical patent/JP5629450B2/ja
Priority claimed from JP2009239867A external-priority patent/JP5629450B2/ja
Priority to US12/883,221 priority patent/US8384177B2/en
Publication of JP2011086840A publication Critical patent/JP2011086840A/ja
Publication of JP2011086840A5 publication Critical patent/JP2011086840A5/ja
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Publication of JP5629450B2 publication Critical patent/JP5629450B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009239867A 2009-10-16 2009-10-16 半導体素子及び半導体素子の形成方法 Expired - Fee Related JP5629450B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009239867A JP5629450B2 (ja) 2009-10-16 2009-10-16 半導体素子及び半導体素子の形成方法
US12/883,221 US8384177B2 (en) 2009-10-16 2010-09-16 Semiconductor device and method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009239867A JP5629450B2 (ja) 2009-10-16 2009-10-16 半導体素子及び半導体素子の形成方法

Publications (3)

Publication Number Publication Date
JP2011086840A JP2011086840A (ja) 2011-04-28
JP2011086840A5 true JP2011086840A5 (enExample) 2012-11-29
JP5629450B2 JP5629450B2 (ja) 2014-11-19

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ID=43878645

Family Applications (1)

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JP2009239867A Expired - Fee Related JP5629450B2 (ja) 2009-10-16 2009-10-16 半導体素子及び半導体素子の形成方法

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US (1) US8384177B2 (enExample)
JP (1) JP5629450B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5487034B2 (ja) * 2010-07-20 2014-05-07 株式会社東芝 半導体装置および半導体装置の製造方法
TWI538023B (zh) 2013-04-17 2016-06-11 華亞科技股份有限公司 具有凹入式閘極結構之記憶體單元及其製作方法
US8846508B1 (en) * 2013-07-15 2014-09-30 Varian Semiconductor Equipment Associates, Inc. Method of implanting high aspect ratio features
KR102399338B1 (ko) 2014-09-12 2022-05-19 삼성전자주식회사 이미지 센서의 제조 방법
JP6861471B2 (ja) * 2015-06-12 2021-04-21 キヤノン株式会社 撮像装置およびその製造方法ならびにカメラ
EP3113224B1 (en) 2015-06-12 2020-07-08 Canon Kabushiki Kaisha Imaging apparatus, method of manufacturing the same, and camera
CN109559984B (zh) * 2017-08-21 2020-11-13 中芯国际集成电路制造(上海)有限公司 半导体装置的制造方法
JP7084735B2 (ja) * 2018-01-31 2022-06-15 キヤノン株式会社 半導体装置の製造方法
CN109216392A (zh) * 2018-09-12 2019-01-15 德淮半导体有限公司 图像传感器及其形成方法
US12183751B2 (en) * 2021-03-25 2024-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Fluorine passivation in a pixel sensor
US12446338B2 (en) * 2021-03-26 2025-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing image sensor including forming FinFET transfer gate having a plurality of channel fins above a p-type region

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3304621B2 (ja) 1994-07-29 2002-07-22 三菱電機株式会社 半導体装置の製造方法
JPH08316465A (ja) * 1995-05-12 1996-11-29 Matsushita Electron Corp 半導体装置およびその製造方法
JP3523151B2 (ja) 1999-09-17 2004-04-26 Ｎｅｃエレクトロニクス株式会社 Ｍｏｓトランジスタの製造方法
JP2001144170A (ja) * 1999-11-11 2001-05-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4832629B2 (ja) * 2000-10-04 2011-12-07 ルネサスエレクトロニクス株式会社 半導体装置
KR100428768B1 (ko) * 2001-08-29 2004-04-30 삼성전자주식회사 트렌치 소자 분리형 반도체 장치 및 그 형성 방법
JP2003318379A (ja) * 2002-04-22 2003-11-07 Sony Corp 光電変換装置及びその製造方法
US6949445B2 (en) * 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
JP2004356554A (ja) 2003-05-30 2004-12-16 Semiconductor Leading Edge Technologies Inc 半導体装置及び半導体装置の製造方法
US7064406B2 (en) * 2003-09-03 2006-06-20 Micron Technology, Inc. Supression of dark current in a photosensor for imaging
DE102004031453B4 (de) * 2004-06-29 2009-01-29 Qimonda Ag Verfahren zur Erzeugung eines Dielektrikums und Halbleiterstruktur
JP2006287117A (ja) * 2005-04-04 2006-10-19 Canon Inc 半導体装置およびその製造方法
US7709345B2 (en) * 2006-03-07 2010-05-04 Micron Technology, Inc. Trench isolation implantation
JP2009224585A (ja) * 2008-03-17 2009-10-01 Panasonic Corp 半導体装置及びその製造方法

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