JP5629450B2 - 半導体素子及び半導体素子の形成方法 - Google Patents

半導体素子及び半導体素子の形成方法 Download PDF

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Publication number
JP5629450B2
JP5629450B2 JP2009239867A JP2009239867A JP5629450B2 JP 5629450 B2 JP5629450 B2 JP 5629450B2 JP 2009239867 A JP2009239867 A JP 2009239867A JP 2009239867 A JP2009239867 A JP 2009239867A JP 5629450 B2 JP5629450 B2 JP 5629450B2
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Japan
Prior art keywords
region
fluorine
trench
semiconductor
element isolation
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Expired - Fee Related
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JP2009239867A
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English (en)
Japanese (ja)
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JP2011086840A (ja
JP2011086840A5 (enExample
Inventor
遠藤　信之
信之 遠藤
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009239867A priority Critical patent/JP5629450B2/ja
Priority to US12/883,221 priority patent/US8384177B2/en
Publication of JP2011086840A publication Critical patent/JP2011086840A/ja
Publication of JP2011086840A5 publication Critical patent/JP2011086840A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
JP2009239867A 2009-10-16 2009-10-16 半導体素子及び半導体素子の形成方法 Expired - Fee Related JP5629450B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009239867A JP5629450B2 (ja) 2009-10-16 2009-10-16 半導体素子及び半導体素子の形成方法
US12/883,221 US8384177B2 (en) 2009-10-16 2010-09-16 Semiconductor device and method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009239867A JP5629450B2 (ja) 2009-10-16 2009-10-16 半導体素子及び半導体素子の形成方法

Publications (3)

Publication Number Publication Date
JP2011086840A JP2011086840A (ja) 2011-04-28
JP2011086840A5 JP2011086840A5 (enExample) 2012-11-29
JP5629450B2 true JP5629450B2 (ja) 2014-11-19

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JP2009239867A Expired - Fee Related JP5629450B2 (ja) 2009-10-16 2009-10-16 半導体素子及び半導体素子の形成方法

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US (1) US8384177B2 (enExample)
JP (1) JP5629450B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5487034B2 (ja) * 2010-07-20 2014-05-07 株式会社東芝 半導体装置および半導体装置の製造方法
TWI538023B (zh) 2013-04-17 2016-06-11 華亞科技股份有限公司 具有凹入式閘極結構之記憶體單元及其製作方法
US8846508B1 (en) * 2013-07-15 2014-09-30 Varian Semiconductor Equipment Associates, Inc. Method of implanting high aspect ratio features
KR102399338B1 (ko) 2014-09-12 2022-05-19 삼성전자주식회사 이미지 센서의 제조 방법
JP6861471B2 (ja) * 2015-06-12 2021-04-21 キヤノン株式会社 撮像装置およびその製造方法ならびにカメラ
EP3113224B1 (en) 2015-06-12 2020-07-08 Canon Kabushiki Kaisha Imaging apparatus, method of manufacturing the same, and camera
CN109559984B (zh) * 2017-08-21 2020-11-13 中芯国际集成电路制造(上海)有限公司 半导体装置的制造方法
JP7084735B2 (ja) * 2018-01-31 2022-06-15 キヤノン株式会社 半導体装置の製造方法
CN109216392A (zh) * 2018-09-12 2019-01-15 德淮半导体有限公司 图像传感器及其形成方法
US12183751B2 (en) * 2021-03-25 2024-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Fluorine passivation in a pixel sensor
US12446338B2 (en) * 2021-03-26 2025-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing image sensor including forming FinFET transfer gate having a plurality of channel fins above a p-type region

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3304621B2 (ja) 1994-07-29 2002-07-22 三菱電機株式会社 半導体装置の製造方法
JPH08316465A (ja) * 1995-05-12 1996-11-29 Matsushita Electron Corp 半導体装置およびその製造方法
JP3523151B2 (ja) 1999-09-17 2004-04-26 Ｎｅｃエレクトロニクス株式会社 Ｍｏｓトランジスタの製造方法
JP2001144170A (ja) * 1999-11-11 2001-05-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4832629B2 (ja) * 2000-10-04 2011-12-07 ルネサスエレクトロニクス株式会社 半導体装置
KR100428768B1 (ko) * 2001-08-29 2004-04-30 삼성전자주식회사 트렌치 소자 분리형 반도체 장치 및 그 형성 방법
JP2003318379A (ja) * 2002-04-22 2003-11-07 Sony Corp 光電変換装置及びその製造方法
US6949445B2 (en) * 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
JP2004356554A (ja) 2003-05-30 2004-12-16 Semiconductor Leading Edge Technologies Inc 半導体装置及び半導体装置の製造方法
US7064406B2 (en) * 2003-09-03 2006-06-20 Micron Technology, Inc. Supression of dark current in a photosensor for imaging
DE102004031453B4 (de) * 2004-06-29 2009-01-29 Qimonda Ag Verfahren zur Erzeugung eines Dielektrikums und Halbleiterstruktur
JP2006287117A (ja) * 2005-04-04 2006-10-19 Canon Inc 半導体装置およびその製造方法
US7709345B2 (en) * 2006-03-07 2010-05-04 Micron Technology, Inc. Trench isolation implantation
JP2009224585A (ja) * 2008-03-17 2009-10-01 Panasonic Corp 半導体装置及びその製造方法

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JP2011086840A (ja) 2011-04-28
US20110089513A1 (en) 2011-04-21
US8384177B2 (en) 2013-02-26

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