JP2009545883A5 - - Google Patents

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JP2009545883A5
JP2009545883A5 JP2009522811A JP2009522811A JP2009545883A5 JP 2009545883 A5 JP2009545883 A5 JP 2009545883A5 JP 2009522811 A JP2009522811 A JP 2009522811A JP 2009522811 A JP2009522811 A JP 2009522811A JP 2009545883 A5 JP2009545883 A5 JP 2009545883A5
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layer
resist
nanostructure
region
silsesquioxane
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JP2009522811A
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JP5254229B2 (ja
JP2009545883A (ja
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Priority claimed from US11/495,188 external-priority patent/US7776758B2/en
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JP2009522811A 2006-07-28 2007-07-27 ナノ構造単層を形成するための方法及びデバイス並びに前記単層を含むデバイス Expired - Fee Related JP5254229B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/495,188 US7776758B2 (en) 2004-06-08 2006-07-28 Methods and devices for forming nanostructure monolayers and devices including such monolayers
US11/495,188 2006-07-28
PCT/US2007/016948 WO2008013959A2 (en) 2006-07-28 2007-07-27 Methods and devices for forming nanostructure monolayers and devices including such monolayers

Related Child Applications (1)

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JP2013036437A Division JP5710668B2 (ja) 2006-07-28 2013-02-26 ナノ構造アレイの形成方法

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JP2009545883A JP2009545883A (ja) 2009-12-24
JP2009545883A5 true JP2009545883A5 (enExample) 2010-09-09
JP5254229B2 JP5254229B2 (ja) 2013-08-07

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JP2009522811A Expired - Fee Related JP5254229B2 (ja) 2006-07-28 2007-07-27 ナノ構造単層を形成するための方法及びデバイス並びに前記単層を含むデバイス
JP2013036437A Expired - Fee Related JP5710668B2 (ja) 2006-07-28 2013-02-26 ナノ構造アレイの形成方法

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US (4) US7776758B2 (enExample)
EP (1) EP2052407B1 (enExample)
JP (2) JP5254229B2 (enExample)
KR (1) KR101376722B1 (enExample)
CN (1) CN101512754B (enExample)
WO (1) WO2008013959A2 (enExample)

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