JP5254229B2 - ナノ構造単層を形成するための方法及びデバイス並びに前記単層を含むデバイス - Google Patents
ナノ構造単層を形成するための方法及びデバイス並びに前記単層を含むデバイス Download PDFInfo
- Publication number
- JP5254229B2 JP5254229B2 JP2009522811A JP2009522811A JP5254229B2 JP 5254229 B2 JP5254229 B2 JP 5254229B2 JP 2009522811 A JP2009522811 A JP 2009522811A JP 2009522811 A JP2009522811 A JP 2009522811A JP 5254229 B2 JP5254229 B2 JP 5254229B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nanostructure
- resist
- nanostructures
- silsesquioxane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 688
- 238000000034 method Methods 0.000 title claims abstract description 210
- 239000003989 dielectric material Substances 0.000 claims abstract description 40
- 238000000059 patterning Methods 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 524
- 239000002356 single layer Substances 0.000 claims description 291
- 239000000758 substrate Substances 0.000 claims description 134
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 33
- 238000009826 distribution Methods 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 25
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 20
- 230000005865 ionizing radiation Effects 0.000 claims description 16
- 150000004767 nitrides Chemical class 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- 229910052707 ruthenium Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 14
- 239000002019 doping agent Substances 0.000 claims description 14
- 238000010894 electron beam technology Methods 0.000 claims description 14
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 238000004528 spin coating Methods 0.000 claims description 13
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 6
- 150000003377 silicon compounds Chemical class 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims 1
- 238000003491 array Methods 0.000 abstract description 100
- 239000002904 solvent Substances 0.000 abstract description 94
- 230000015572 biosynthetic process Effects 0.000 abstract description 45
- 238000000576 coating method Methods 0.000 abstract description 43
- 238000000137 annealing Methods 0.000 abstract description 23
- 230000008021 deposition Effects 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 description 79
- 239000000243 solution Substances 0.000 description 63
- 239000000463 material Substances 0.000 description 56
- 239000002096 quantum dot Substances 0.000 description 44
- 239000007787 solid Substances 0.000 description 44
- 239000003446 ligand Substances 0.000 description 40
- 239000011248 coating agent Substances 0.000 description 39
- 239000002159 nanocrystal Substances 0.000 description 29
- -1 mercapto-propyl-cyclohexyl Chemical group 0.000 description 25
- 229910004298 SiO 2 Inorganic materials 0.000 description 24
- 239000007788 liquid Substances 0.000 description 21
- 239000011521 glass Substances 0.000 description 20
- 230000001788 irregular Effects 0.000 description 20
- 125000006850 spacer group Chemical group 0.000 description 20
- 239000002070 nanowire Substances 0.000 description 19
- 230000004927 fusion Effects 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 238000003786 synthesis reaction Methods 0.000 description 17
- 230000006870 function Effects 0.000 description 16
- 239000011159 matrix material Substances 0.000 description 15
- 239000012811 non-conductive material Substances 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 14
- 239000012298 atmosphere Substances 0.000 description 13
- 229910044991 metal oxide Inorganic materials 0.000 description 13
- 150000004706 metal oxides Chemical class 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 238000012545 processing Methods 0.000 description 13
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 12
- 125000000217 alkyl group Chemical group 0.000 description 12
- 238000001704 evaporation Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- 229910000077 silane Inorganic materials 0.000 description 10
- 238000001723 curing Methods 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 9
- 239000002073 nanorod Substances 0.000 description 9
- 239000004033 plastic Substances 0.000 description 9
- 229920003023 plastic Polymers 0.000 description 9
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- ZWCNRMDCQDJIRL-UHFFFAOYSA-N octavinyloctasilasesquioxane Chemical compound O1[Si](O[Si](O2)(O[Si](O3)(O4)C=C)C=C)(C=C)O[Si]4(C=C)O[Si]4(C=C)O[Si]1(C=C)O[Si]2(C=C)O[Si]3(C=C)O4 ZWCNRMDCQDJIRL-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 6
- 239000004054 semiconductor nanocrystal Substances 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 239000008199 coating composition Substances 0.000 description 5
- 239000011258 core-shell material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 5
- 238000003618 dip coating Methods 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 5
- 229910021334 nickel silicide Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 230000008439 repair process Effects 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 5
- 229910021342 tungsten silicide Inorganic materials 0.000 description 5
- SDTMFDGELKWGFT-UHFFFAOYSA-N 2-methylpropan-2-olate Chemical compound CC(C)(C)[O-] SDTMFDGELKWGFT-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000010348 incorporation Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 239000011343 solid material Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- FUOJEDZPVVDXHI-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 5-azido-2-nitrobenzoate Chemical compound [O-][N+](=O)C1=CC=C(N=[N+]=[N-])C=C1C(=O)ON1C(=O)CCC1=O FUOJEDZPVVDXHI-UHFFFAOYSA-N 0.000 description 3
- NGCRLFIYVFOUMZ-UHFFFAOYSA-N 2,3-dichloroquinoxaline-6-carbonyl chloride Chemical compound N1=C(Cl)C(Cl)=NC2=CC(C(=O)Cl)=CC=C21 NGCRLFIYVFOUMZ-UHFFFAOYSA-N 0.000 description 3
- HRJSLUPAMXKPPM-UHFFFAOYSA-N 5-methyl-2-(3-methylphenyl)pyrazol-3-amine Chemical compound N1=C(C)C=C(N)N1C1=CC=CC(C)=C1 HRJSLUPAMXKPPM-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910005335 FePt Inorganic materials 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 241001455273 Tetrapoda Species 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- DYPIGRVRIMDVFA-UHFFFAOYSA-N cyclopenta-1,3-diene;lanthanum(3+) Chemical compound [La+3].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 DYPIGRVRIMDVFA-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 3
- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical compound [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- KNLGRGALOHHVOL-UHFFFAOYSA-N hafnium(4+);methanidylbenzene Chemical compound [Hf+4].[CH2-]C1=CC=CC=C1.[CH2-]C1=CC=CC=C1.[CH2-]C1=CC=CC=C1.[CH2-]C1=CC=CC=C1 KNLGRGALOHHVOL-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- PGPDZDIKLWZUIR-UHFFFAOYSA-N lanthanum;propylcyclopentane Chemical compound [La].CCC[C]1[CH][CH][CH][CH]1.CCC[C]1[CH][CH][CH][CH]1.CCC[C]1[CH][CH][CH][CH]1 PGPDZDIKLWZUIR-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- LVNAMAOHFNPWJB-UHFFFAOYSA-N methanol;tantalum Chemical compound [Ta].OC.OC.OC.OC.OC LVNAMAOHFNPWJB-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- CTRLRINCMYICJO-UHFFFAOYSA-N phenyl azide Chemical group [N-]=[N+]=NC1=CC=CC=C1 CTRLRINCMYICJO-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- 239000013545 self-assembled monolayer Substances 0.000 description 3
- 238000001338 self-assembly Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 125000003396 thiol group Chemical class [H]S* 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 3
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- QJGDGUBLGKFNDB-UHFFFAOYSA-N 1-azido-2-nitrobenzene Chemical group [O-][N+](=O)C1=CC=CC=C1N=[N+]=[N-] QJGDGUBLGKFNDB-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 208000000044 Amnesia Diseases 0.000 description 2
- 229910015808 BaTe Inorganic materials 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 208000026139 Memory disease Diseases 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- HHFAWKCIHAUFRX-UHFFFAOYSA-N ethoxide Chemical compound CC[O-] HHFAWKCIHAUFRX-UHFFFAOYSA-N 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- PWBYYTXZCUZPRD-UHFFFAOYSA-N iron platinum Chemical compound [Fe][Pt][Pt] PWBYYTXZCUZPRD-UHFFFAOYSA-N 0.000 description 2
- 230000006984 memory degeneration Effects 0.000 description 2
- 208000023060 memory loss Diseases 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000002094 self assembled monolayer Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000000935 solvent evaporation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- WYSAWGCLEHCQLX-UHFFFAOYSA-N 2-azidophenol Chemical group OC1=CC=CC=C1N=[N+]=[N-] WYSAWGCLEHCQLX-UHFFFAOYSA-N 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910004813 CaTe Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Divinylene sulfide Natural products C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 description 1
- 229910017680 MgTe Inorganic materials 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910004411 SrTe Inorganic materials 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000005382 boronyl group Chemical group 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 239000002894 chemical waste Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- YGUFXEJWPRRAEK-UHFFFAOYSA-N dodecyl(triethoxy)silane Chemical compound CCCCCCCCCCCC[Si](OCC)(OCC)OCC YGUFXEJWPRRAEK-UHFFFAOYSA-N 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 235000019000 fluorine Nutrition 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- NBTOZLQBSIZIKS-UHFFFAOYSA-N methoxide Chemical compound [O-]C NBTOZLQBSIZIKS-UHFFFAOYSA-N 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- NMHMNPHRMNGLLB-UHFFFAOYSA-N phloretic acid Chemical group OC(=O)CCC1=CC=C(O)C=C1 NMHMNPHRMNGLLB-UHFFFAOYSA-N 0.000 description 1
- 125000005328 phosphinyl group Chemical group [PH2](=O)* 0.000 description 1
- 125000005499 phosphonyl group Chemical group 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 150000003303 ruthenium Chemical class 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229960002317 succinimide Drugs 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- BNCXNUWGWUZTCN-UHFFFAOYSA-N trichloro(dodecyl)silane Chemical compound CCCCCCCCCCCC[Si](Cl)(Cl)Cl BNCXNUWGWUZTCN-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- FZMJEGJVKFTGMU-UHFFFAOYSA-N triethoxy(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC FZMJEGJVKFTGMU-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- QZQIWEZRSIPYCU-UHFFFAOYSA-N trithiole Chemical compound S1SC=CS1 QZQIWEZRSIPYCU-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28229—Making the insulator by deposition of a layer, e.g. metal, metal compound or poysilicon, followed by transformation thereof into an insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
- Y10S977/782—Possessing nanosized physical convexity, ridge, or protrusion extending upward from the host's surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/845—Purification or separation of fullerenes or nanotubes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
- Y10S977/891—Vapor phase deposition
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Formation Of Insulating Films (AREA)
Description
本願は米国特許出願第11/495,188号(出願日2006年7月28日,発明の名称「ナノ構造単層を形成するための方法及びデバイス並びに前記単層を含むデバイス(METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS)」)の一部継続出願であり、その開示内容全体を全目的で本明細書に援用する。
本発明は主にナノテクノロジーの分野に関する。より詳細には、本発明は例えば規定サイズ及び/又は規定位置にナノ構造アレイ、例えば単層アレイを形成するための方法及びデバイスと、前記ナノ構造アレイを含むデバイス(例えばメモリデバイス)に関する。本発明は高温処理中にナノ構造を融着から保護するための方法にも関する。
特に定義しない限り、本明細書で使用する全科学技術用語は本発明が属する分野の当業者に通常理解されている通りの意味をもつ。以下の定義は当分野の定義を補足し、本願に関するものであり、関連又は非関連ケース(例えば同一名義の特許又は出願)に帰属するものではない。本発明の試験の実施には本明細書に記載するものに類似又は等価の任意方法及び材料を使用することができるが、好ましい材料と方法は本明細書に記載する。従って、本明細書で使用する用語は特定態様の記載のみを目的とし、限定的ではない。
1側面において、本発明はナノ構造アレイ、例えばナノ構造の規則配列又は不規則配列単層アレイを形成するための方法を提供する。アレイは場合により規定位置に形成され、及び/又は規定寸法をもつ。前記方法に関連するデバイスと、ナノ構造アレイを含むデバイスも提供する。例えば、1側面において、本発明はナノ構造の小型単層アレイを含むメモリデバイスを提供する。
ナノ構造アレイを形成しようとする表面に化学的組成物、例えば表面自体よりもナノ構造に対して高い親和性をもつ組成物をコーティングすることができる。このようなコーティングは例えば表面へのナノ構造の接着を助長し、従って、単層の形成を助長することができる。
上記のように、ナノ構造単層は多数の用途に望ましい。例えば、ナノ結晶フラッシュメモリデバイスを作製するためにはトンネル酸化物上に量子ドット単層を形成することが望ましい。ナノ結晶型フラッシュメモリデバイス(又は他のナノ構造型デバイス)の性能はナノ構造密度の変動により少なくとも部分的に決定され得るので、ナノ構造密度変動の少ない高密度単層が望ましい。他方、ナノドットの不完全なサイズ分布は自己集合のコヒーレンス長に影響を与えるので、基板にドットを被覆しただけ(例えばナノ構造会合基を含む組成物で表面を修飾しない基板や、ドットをマトリックス材料に分散しない基板等)では、一般に局在ドット集合となり、相互間に粒界が形成される。自己集合コヒーレンス長はドットのサイズ分布に依存するので、集合プロセスの品質はドットのサイズ分布により制限されており、得られる集合の品質を改善することが課題となっている。溶液相化学では通常、10%未満のサイズ分布が得られるが、従来のCVD及びPVDアプローチによる粒度分布は約20%〜25%である。
本発明の1側面は単層品質を改善するために使用することができる溶媒アニール法を提供する。量子ドット又は他のナノ構造を表面に堆積した後、溶媒アニールを使用し、ナノ構造を溶媒蒸気に暴露し、表面のナノ構造に多少の短距離移動性を導入し、こうして単層集合品質を改善することができる。
上記所定方法は得られる単層ナノ構造アレイのサイズ、形状、及び/又は位置を規定することができる。レジスト、例えばフォトレジストの使用も単層アレイのこのようなパターニングを助長することができる。
本発明の1側面はナノ構造アレイを形成するためのデバイスと前記デバイスの使用方法を提供する。従って、1つの一般分類の態様は第1層と、第2層と、第1層と第2層の間のキャビティと、1個以上のスペーサと、少なくとも1個のアパーチャを含むデバイスを提供する。1個以上のスペーサは第1層と第2層の間に配置され、第1層と第2層の間に距離を維持する。少なくとも1個のアパーチャはキャビティを外部雰囲気と連通させる。キャビティはナノ構造集団により占められる。
上記方法及びデバイスはナノ構造アレイを規定位置に作製するために使用することができ、これらのアレイはメモリデバイス、LED等のデバイスに組込むことができる。従って、1側面において、本発明は規定位置及び/又はサイズのアレイを含むナノ構造アレイを含むデバイスを提供する。
前記方法及びデバイスで使用される個々のナノ構造としては限定されないが、ナノ結晶、量子ドット、ナノドット、ナノ粒子、ナノワイヤー、ナノロッド、ナノチューブ、ナノテトラポッド、トライポッド、バイポッド、分岐ナノ構造、又は分岐テトラポッドが挙げられる。1側面において、前記方法及びデバイスは球形、略球形、及び/又は等方性ナノ結晶(例えばナノドット及び/又は量子ドット)を含み、例えば平均直径約10nm未満、場合により約8nm、6nm、5nm、又は4nm未満の実質的に球状のナノ構造又は量子ドットを含む。
Claims (34)
- a)ナノ構造をレジストに埋め込むようにレジストとナノ構造単層を第1層上に配置し、レジスト層を提供する段階と;
b)レジスト層上の規定パターンを露光し、レジスト層の少なくとも第1領域に露光レジストを提供し、レジスト層の少なくとも第2領域に未露光レジストを提供する段階と;
c)第1領域により規定される少なくとも1個のナノ構造単層アレイが第1層上に残存するように、露光レジストとそこに埋め込まれたナノ構造を除去せずに未露光レジストとそこに埋め込まれたナノ構造を第1層から除去する段階と;
d)段階c)後に、第1層と露光レジストとそこに埋め込まれたナノ構造を少なくとも300℃の温度に暴露する段階を含むナノ構造単層のパターニング方法。 - 段階d)において、第1層と露光レジストとそこに埋め込まれたナノ構造を少なくとも700℃の温度に暴露する請求項1に記載の方法。
- 段階d)において、第1層と露光レジストとそこに埋め込まれたナノ構造を少なくとも900℃の温度に暴露する請求項1に記載の方法。
- 段階b)においてレジスト層上の規定パターンを露光する段階が規定パターンに紫外線又は電子ビームを照射する段階を含む請求項1に記載の方法。
- 段階b)においてレジスト層上の規定パターンを露光し、少なくとも第1領域に露光レジストを提供する段階が、第1領域のレジストを不完全に硬化させるために十分な電離性放射線を第1領域のレジストに照射する段階を含み;
前記方法が段階c)の後で段階d)の前に、第1領域の露光レジストを更に硬化させるために十分な電離性放射線を第1領域のレジストに照射する段階を含む請求項1に記載の方法。 - 段階b)で第1領域のレジストに10mJ/cm2〜1J/cm2の紫外線を照射して第1領域のレジストを不完全に硬化させ;段階c)の後で段階d)の前に、第1領域のレジストに1J/cm2〜50J/cm2の紫外線を照射し、第1領域のレジストを更に硬化させる請求項5に記載の方法。
- 段階d)後に、単層アレイにおけるナノ構造のサイズ分布が20%未満のrms偏差を示す請求項1に記載の方法。
- 段階a)においてレジストとナノ構造単層を第1層上に配置する段階がレジストとナノ構造を含有する溶液を第1層にスピンコートする段階を含む請求項1に記載の方法。
- レジストがケイ素化合物を含む請求項1に記載の方法。
- レジストがシルセスキオキサンを含む請求項1に記載の方法。
- 第1層が誘電体材料、酸化物、窒化物、酸化ケイ素、窒化ケイ素、酸化ハフニウム、又はアルミナを含む請求項1に記載の方法。
- 第1層がヘキサメチルジシラザンを被覆した酸化ケイ素を含むか、又は第1層がヘキサメチルジシラザン被覆した窒化ケイ素を含む請求項11に記載の方法。
- 第1層を基板上に配置し、前記基板が半導体を含む請求項1に記載の方法。
- 第1層が誘電体材料を含み、厚さ1nm〜10nmである請求項13に記載の方法。
- 段階d)の前に基板にドーパントイオンを注入することによりナノ構造の単層アレイの近傍で基板にソース領域とドレイン領域を形成する段階を含み、段階d)中に基板の注入損傷を修復し、ドーパントを活性化させる請求項13に記載の方法。
- ゲート電極を露光レジスト上に配置する段階を含む請求項13に記載の方法。
- ゲート電極を露光レジスト上に配置する前に、誘電体層を露光レジスト上に配置する段階を含む請求項16に記載の方法。
- ナノ構造が金属ナノ構造を含む請求項1に記載の方法。
- ナノ構造がパラジウム、白金、ニッケル、又はルテニウムを含む請求項1に記載の方法。
- a)ナノ構造とシルセスキオキサンを第1層上に配置する段階と;
b)i)シルセスキオキサンを電離性放射線で規定パターンに露光し、少なくとも第2領域のシルセスキオキサンを未露光及び未硬化状態に維持しながら少なくとも第1領域のシルセスキオキサンを露光して不完全に硬化させ;
ii)不完全に硬化したシルセスキオキサンとそこに埋め込まれたナノ構造を第1領域から除去せずに、未露光のシルセスキオキサンとそこに埋め込まれたナノ構造を第2領域から除去し;
iii)段階ii)の後に、第1領域の不完全に硬化したシルセスキオキサンに電離性放射線を照射し、シルセスキオキサンを更に硬化させ、硬化シルセスキオキサンを提供することにより、シルセスキオキサンを硬化させ、ナノ構造が埋め込まれた硬化シルセスキオキサンを提供する段階を含むナノ構造のパターニング方法。 - 段階a)においてナノ構造とシルセスキオキサンを第1層上に配置する段階がシルセスキオキサンとナノ構造を含有する溶液を第1層にスピンコートする段階を含む請求項20に記載の方法。
- 段階a)においてナノ構造とシルセスキオキサンを第1層上に配置する段階がシルセスキオキサンとナノ構造単層を第1層上に配置する段階を含む請求項20に記載の方法。
- 段階b)iii)後に、硬化したシルセスキオキサンを300℃〜400℃の温度に暴露する段階を含む請求項20に記載の方法。
- シルセスキオキサンと不完全に硬化したシルセスキオキサンに電離性放射線を照射する段階がシルセスキオキサンと不完全に硬化したシルセスキオキサンに紫外線又は電子ビームを照射する段階を含む請求項20に記載の方法。
- 段階b)i)において第1領域のシルセスキオキサンに10mJ/cm2〜1J/cm2の紫外線を照射し、第1領域のシルセスキオキサンを不完全に硬化させ;段階b)iii)において第1領域の不完全に硬化したシルセスキオキサンに1J/cm2〜50J/cm2の紫外線を照射し、第1領域のシルセスキオキサンを更に硬化させる請求項20に記載の方法。
- 第1層と、硬化したシルセスキオキサンと、そこに埋め込まれたナノ構造を加熱する段階c)を更に含む請求項20に記載の方法。
- 段階c)において、第1層と、硬化したシルセスキオキサンと、そこに埋め込まれたナノ構造を加熱する段階が第1層と、硬化したシルセスキオキサンと、そこに埋め込まれたナノ構造を少なくとも300℃の温度に暴露する段階を含む請求項26に記載の方法。
- 段階c)において、第1層と、硬化したシルセスキオキサンと、そこに埋め込まれたナノ構造を少なくとも700℃の温度に暴露する請求項27に記載の方法。
- 段階c)において、第1層と、硬化したシルセスキオキサンと、そこに埋め込まれたナノ構造を少なくとも900℃の温度に暴露する段階を含む請求項27に記載の方法。
- ナノ構造が金属ナノ構造を含む請求項20に記載の方法。
- ナノ構造がパラジウム、白金、ニッケル、又はルテニウムを含む請求項20に記載の方法。
- a)ナノ構造をレジストに埋め込むようにレジストとナノ構造単層を第1層上に配置し、レジスト層を提供する段階であって、レジストとナノ構造を含有した溶液を第1層上に配置することを含む前記段階と;
b)レジスト層上の規定パターンを露光し、レジスト層の少なくとも第1領域に露光レジストを提供し、レジスト層の少なくとも第2領域に未露光レジストを提供する段階と;
c)第1領域により規定される少なくとも1個のナノ構造単層アレイが第1層上に残存するように、露光レジストとそこに埋め込まれたナノ構造を除去せずに未露光レジストとそこに埋め込まれたナノ構造を第1層から除去する段階を含むナノ構造単層のパターニング方法。 - 第1層が誘電体材料、酸化物、窒化物、酸化ケイ素、窒化ケイ素、酸化ハフニウム、又はアルミナを含む請求項32に記載の方法。
- 第1層がヘキサメチルジシラザンを被覆した酸化ケイ素を含むか、又は第1層がヘキサメチルジシラザン被覆した窒化ケイ素を含む請求項33に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/495,188 | 2006-07-28 | ||
US11/495,188 US7776758B2 (en) | 2004-06-08 | 2006-07-28 | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
PCT/US2007/016948 WO2008013959A2 (en) | 2006-07-28 | 2007-07-27 | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013036437A Division JP5710668B2 (ja) | 2006-07-28 | 2013-02-26 | ナノ構造アレイの形成方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009545883A JP2009545883A (ja) | 2009-12-24 |
JP2009545883A5 JP2009545883A5 (ja) | 2010-09-09 |
JP5254229B2 true JP5254229B2 (ja) | 2013-08-07 |
Family
ID=38982112
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009522811A Expired - Fee Related JP5254229B2 (ja) | 2006-07-28 | 2007-07-27 | ナノ構造単層を形成するための方法及びデバイス並びに前記単層を含むデバイス |
JP2013036437A Expired - Fee Related JP5710668B2 (ja) | 2006-07-28 | 2013-02-26 | ナノ構造アレイの形成方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013036437A Expired - Fee Related JP5710668B2 (ja) | 2006-07-28 | 2013-02-26 | ナノ構造アレイの形成方法 |
Country Status (6)
Country | Link |
---|---|
US (4) | US7776758B2 (ja) |
EP (1) | EP2052407B1 (ja) |
JP (2) | JP5254229B2 (ja) |
KR (1) | KR101376722B1 (ja) |
CN (1) | CN101512754B (ja) |
WO (1) | WO2008013959A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210009147A (ko) * | 2019-07-16 | 2021-01-26 | 현대자동차주식회사 | 양자점을 이용한 광센서 제조 방법 및 그 제조 방법에 의해 제조되는 광센서 |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8958917B2 (en) | 1998-12-17 | 2015-02-17 | Hach Company | Method and system for remote monitoring of fluid quality and treatment |
US7454295B2 (en) | 1998-12-17 | 2008-11-18 | The Watereye Corporation | Anti-terrorism water quality monitoring system |
US9056783B2 (en) | 1998-12-17 | 2015-06-16 | Hach Company | System for monitoring discharges into a waste water collection system |
US8920619B2 (en) | 2003-03-19 | 2014-12-30 | Hach Company | Carbon nanotube sensor |
CN102064102B (zh) * | 2004-06-08 | 2013-10-30 | 桑迪士克公司 | 形成单层纳米结构的方法和器件以及包含这种单层的器件 |
US7968273B2 (en) | 2004-06-08 | 2011-06-28 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US8563133B2 (en) | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
US7776758B2 (en) | 2004-06-08 | 2010-08-17 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US7339184B2 (en) * | 2004-07-07 | 2008-03-04 | Nanosys, Inc | Systems and methods for harvesting and integrating nanowires |
US7358101B2 (en) * | 2005-09-06 | 2008-04-15 | Institute Of Nuclear Energy Research | Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots |
US20080150009A1 (en) * | 2006-12-20 | 2008-06-26 | Nanosys, Inc. | Electron Blocking Layers for Electronic Devices |
US7847341B2 (en) | 2006-12-20 | 2010-12-07 | Nanosys, Inc. | Electron blocking layers for electronic devices |
US20080150004A1 (en) * | 2006-12-20 | 2008-06-26 | Nanosys, Inc. | Electron Blocking Layers for Electronic Devices |
US8686490B2 (en) | 2006-12-20 | 2014-04-01 | Sandisk Corporation | Electron blocking layers for electronic devices |
US7763511B2 (en) * | 2006-12-29 | 2010-07-27 | Intel Corporation | Dielectric barrier for nanocrystals |
WO2008085813A2 (en) * | 2007-01-03 | 2008-07-17 | Nanosys, Inc, Et Al. | Methods for nanopatterning and production of nanostructures |
US20090136785A1 (en) * | 2007-01-03 | 2009-05-28 | Nanosys, Inc. | Methods for nanopatterning and production of magnetic nanostructures |
GB0801494D0 (en) * | 2007-02-23 | 2008-03-05 | Univ Ind & Acad Collaboration | Nonvolatile memory electronic device using nanowire used as charge channel and nanoparticles used as charge trap and method for manufacturing the same |
US7680553B2 (en) * | 2007-03-08 | 2010-03-16 | Smp Logic Systems Llc | Methods of interfacing nanomaterials for the monitoring and execution of pharmaceutical manufacturing processes |
KR100904588B1 (ko) * | 2007-07-05 | 2009-06-25 | 삼성전자주식회사 | 코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자 |
US7989153B2 (en) * | 2007-07-11 | 2011-08-02 | Qd Vision, Inc. | Method and apparatus for selectively patterning free standing quantum DOT (FSQDT) polymer composites |
GB0717055D0 (en) * | 2007-09-01 | 2007-10-17 | Eastman Kodak Co | An electronic device |
US8063430B2 (en) * | 2007-10-18 | 2011-11-22 | Samsung Electronics Co., Ltd. | Semiconductor devices and methods of manufacturing and operating same |
KR100949880B1 (ko) * | 2007-10-31 | 2010-03-26 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
US8659009B2 (en) * | 2007-11-02 | 2014-02-25 | The Trustees Of Columbia University In The City Of New York | Locally gated graphene nanostructures and methods of making and using |
US8193055B1 (en) | 2007-12-18 | 2012-06-05 | Sandisk Technologies Inc. | Method of forming memory with floating gates including self-aligned metal nanodots using a polymer solution |
US7723186B2 (en) * | 2007-12-18 | 2010-05-25 | Sandisk Corporation | Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer |
US8134684B2 (en) * | 2008-02-22 | 2012-03-13 | Sematech, Inc. | Immersion lithography using hafnium-based nanoparticles |
US7960715B2 (en) | 2008-04-24 | 2011-06-14 | University Of Iowa Research Foundation | Semiconductor heterostructure nanowire devices |
US8138102B2 (en) * | 2008-08-21 | 2012-03-20 | International Business Machines Corporation | Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure |
FR2938689B1 (fr) * | 2008-11-14 | 2010-12-24 | Commissariat Energie Atomique | Procede d'elaboration d'une couche a stockage de charges d'une cellule de memoire |
US8383479B2 (en) * | 2009-07-21 | 2013-02-26 | Sandisk Technologies Inc. | Integrated nanostructure-based non-volatile memory fabrication |
US8298890B1 (en) | 2009-09-03 | 2012-10-30 | Intermolecular, Inc. | Charge blocking layers for nonvolatile memories |
US8124485B1 (en) | 2011-02-23 | 2012-02-28 | International Business Machines Corporation | Molecular spacer layer for semiconductor oxide surface and high-K dielectric stack |
CN103503191A (zh) * | 2011-03-04 | 2014-01-08 | 凯博瑞奥斯技术公司 | 调节基于金属纳米结构的透明导体的功函数的方法 |
US8766367B2 (en) * | 2011-06-30 | 2014-07-01 | Palo Alto Research Center Incorporated | Textured gate for high current thin film transistors |
US20130035258A1 (en) * | 2011-08-05 | 2013-02-07 | Nanoaxis, Llc | Luminescent tetrapods dots and various applications |
CN103178062A (zh) * | 2011-12-20 | 2013-06-26 | 中国科学院微电子研究所 | 一种金属纳米晶存储器 |
US9252021B2 (en) | 2012-02-09 | 2016-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for patterning a plurality of features for Fin-like field-effect transistor (FinFET) devices |
TWI573194B (zh) * | 2012-06-15 | 2017-03-01 | Dic股份有限公司 | 半導體用絕緣膜及使用其的有機薄膜電晶體 |
US9853053B2 (en) | 2012-09-10 | 2017-12-26 | 3B Technologies, Inc. | Three dimension integrated circuits employing thin film transistors |
US9548415B1 (en) * | 2013-02-19 | 2017-01-17 | Hrl Laboratories, Llc | All-wavelength (VIS-LWIR) transparent electrical contacts and interconnects and methods of making them |
US8821736B1 (en) * | 2013-02-20 | 2014-09-02 | HGST Netherlands B.V. | Method for making a perpendicular magnetic recording disk with template layer formed of nanoparticles embedded in a polymer material |
JP6379671B2 (ja) * | 2013-06-24 | 2018-08-29 | Jsr株式会社 | 硬化性樹脂組成物、硬化膜、発光素子、波長変換フィルムおよび発光層の形成方法 |
KR102197936B1 (ko) * | 2013-06-24 | 2021-01-04 | 제이에스알 가부시끼가이샤 | 경화성 수지 조성물, 경화막, 발광 소자, 파장 변환 필름 및 발광층의 형성 방법 |
JP6230974B2 (ja) * | 2013-08-26 | 2017-11-15 | 富士フイルム株式会社 | 光変換部材、バックライトユニット、および液晶表示装置、ならびに光変換部材の製造方法 |
JP2015102857A (ja) * | 2013-11-28 | 2015-06-04 | 富士フイルム株式会社 | 光変換部材、バックライトユニット、および液晶表示装置、ならびに光変換部材の製造方法 |
CN103728837B (zh) | 2013-12-30 | 2016-08-31 | 京东方科技集团股份有限公司 | 感光树脂组合物及用感光树脂组合物制备量子点图案的方法 |
US9735359B2 (en) | 2014-04-23 | 2017-08-15 | Micron Technology, Inc. | Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures |
KR102214833B1 (ko) * | 2014-06-17 | 2021-02-10 | 삼성전자주식회사 | 그래핀과 양자점을 포함하는 전자 소자 |
CN106794450B (zh) * | 2014-08-29 | 2020-12-25 | 日东电工株式会社 | 光催化涂层及其制备方法 |
CN105789049B (zh) * | 2014-09-12 | 2019-06-21 | 台湾积体电路制造股份有限公司 | 图案化鳍式场效应晶体管(finfet)器件的多个部件的方法 |
CN107112049A (zh) | 2014-12-23 | 2017-08-29 | 3B技术公司 | 采用薄膜晶体管的三维集成电路 |
US10246634B2 (en) | 2015-10-26 | 2019-04-02 | Samsung Electronics Co., Ltd. | Quantum dot having polymeric outer layer, photosensitive compositions including the same, and quantum dot polymer composite pattern produced therefrom |
KR20170101005A (ko) | 2016-02-26 | 2017-09-05 | 삼성에스디아이 주식회사 | 감광성 수지 조성물 및 이를 이용한 컬러필터 |
JP6507322B2 (ja) * | 2016-08-31 | 2019-04-24 | 富士フイルム株式会社 | 半導体ナノ粒子複合体の製造方法、半導体ナノ粒子複合体およびフィルム |
CN108072683B (zh) * | 2016-11-10 | 2021-04-23 | 元太科技工业股份有限公司 | 感测元件及其形成方法 |
CN108101381B (zh) * | 2016-11-25 | 2021-05-28 | 南京理工大学 | 一种铋基卤化物钙钛矿纳米片及其制备方法 |
WO2018112024A1 (en) * | 2016-12-13 | 2018-06-21 | Eccrine Systems, Inc. | Thiolated aromatic blocking structures for eab biosensors |
CN108630827B (zh) * | 2017-03-15 | 2020-01-14 | Tcl集团股份有限公司 | 一种量子点固态膜、量子点发光二极管及其制备方法 |
CN109671837B (zh) * | 2017-10-17 | 2021-08-10 | 乐金显示有限公司 | 发光体以及包括其的发光膜、发光二极管和发光装置 |
CN107799672B (zh) * | 2017-10-30 | 2020-12-29 | 京东方科技集团股份有限公司 | 量子点层图案化的方法、量子点发光器件及其制作方法 |
US11195089B2 (en) | 2018-06-28 | 2021-12-07 | International Business Machines Corporation | Multi-terminal cross-point synaptic device using nanocrystal dot structures |
US11738366B2 (en) * | 2019-01-25 | 2023-08-29 | The Regents Of The University Of California | Method of coating an object |
TWI757973B (zh) * | 2019-12-06 | 2022-03-11 | 美商伊路米納有限公司 | 使用圖形檔案控制電子元件的方法和裝置以及相關的電腦程式產品和圖形檔案組 |
CN114649484A (zh) * | 2020-12-17 | 2022-06-21 | 京东方科技集团股份有限公司 | 一种量子点器件、显示装置和量子点器件的制作方法 |
CN114336278B (zh) * | 2021-11-30 | 2023-08-15 | 南京邮电大学 | 一种ZnO悬浮碗状结构的垂直腔面激光发射器及其制备方法 |
Family Cites Families (156)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3514320A (en) * | 1969-02-10 | 1970-05-26 | William H Vaughan | Method of forming single crystal films by nonepitaxial growth |
US3615956A (en) | 1969-03-27 | 1971-10-26 | Signetics Corp | Gas plasma vapor etching process |
US3994793A (en) | 1975-05-22 | 1976-11-30 | International Business Machines Corporation | Reactive ion etching of aluminum |
US4057460A (en) | 1976-11-22 | 1977-11-08 | Data General Corporation | Plasma etching process |
US4414066A (en) | 1982-09-10 | 1983-11-08 | Bell Telephone Laboratories, Incorporated | Electrochemical photoetching of compound semiconductors |
US4464223A (en) | 1983-10-03 | 1984-08-07 | Tegal Corp. | Plasma reactor apparatus and method |
US4595454A (en) | 1984-06-15 | 1986-06-17 | At&T Bell Laboratories | Fabrication of grooved semiconductor devices |
US4523976A (en) | 1984-07-02 | 1985-06-18 | Motorola, Inc. | Method for forming semiconductor devices |
US4599136A (en) | 1984-10-03 | 1986-07-08 | International Business Machines Corporation | Method for preparation of semiconductor structures and devices which utilize polymeric dielectric materials |
US4639301B2 (en) | 1985-04-24 | 1999-05-04 | Micrion Corp | Focused ion beam processing |
US5043940A (en) | 1988-06-08 | 1991-08-27 | Eliyahou Harari | Flash EEPROM memory systems having multistate storage cells |
US5268870A (en) | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Flash EEPROM system and intelligent programming and erasing methods therefor |
US5092957A (en) | 1989-11-24 | 1992-03-03 | The United States Of America As Represented By The United States Department Of Energy | Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching |
US5149974A (en) | 1990-10-29 | 1992-09-22 | International Business Machines Corporation | Gas delivery for ion beam deposition and etching |
JPH07502479A (ja) | 1991-11-22 | 1995-03-16 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 自己集合性単一層を使って固体無機表面に共有結合した半導体微少結晶 |
US5505928A (en) | 1991-11-22 | 1996-04-09 | The Regents Of University Of California | Preparation of III-V semiconductor nanocrystals |
US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US6048616A (en) | 1993-04-21 | 2000-04-11 | Philips Electronics N.A. Corp. | Encapsulated quantum sized doped semiconductor particles and method of manufacturing same |
KR0153311B1 (ko) | 1994-04-06 | 1998-12-15 | 가나이 쯔도무 | 자기 저항 효과형 박막 자기 헤드 및 그 제조 방법 |
US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US5609907A (en) | 1995-02-09 | 1997-03-11 | The Penn State Research Foundation | Self-assembled metal colloid monolayers |
US5690807A (en) | 1995-08-03 | 1997-11-25 | Massachusetts Institute Of Technology | Method for producing semiconductor particles |
US5958794A (en) | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
US5714766A (en) | 1995-09-29 | 1998-02-03 | International Business Machines Corporation | Nano-structure memory device |
US5897945A (en) | 1996-02-26 | 1999-04-27 | President And Fellows Of Harvard College | Metal oxide nanorods |
US6036774A (en) | 1996-02-26 | 2000-03-14 | President And Fellows Of Harvard College | Method of producing metal oxide nanorods |
EP0792688A1 (en) | 1996-03-01 | 1997-09-03 | Dow Corning Corporation | Nanoparticles of silicon oxide alloys |
JP3707856B2 (ja) | 1996-03-07 | 2005-10-19 | 富士通株式会社 | レジストパターンの形成方法 |
US5768192A (en) | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
US5764568A (en) | 1996-10-24 | 1998-06-09 | Micron Quantum Devices, Inc. | Method for performing analog over-program and under-program detection for a multistate memory cell |
JP4162280B2 (ja) | 1996-11-15 | 2008-10-08 | 株式会社日立製作所 | メモリデバイスおよびメモリアレイ回路 |
US5820689A (en) | 1996-12-04 | 1998-10-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet chemical treatment system and method for cleaning such system |
US5852306A (en) | 1997-01-29 | 1998-12-22 | Micron Technology, Inc. | Flash memory with nanocrystalline silicon film floating gate |
US5997832A (en) | 1997-03-07 | 1999-12-07 | President And Fellows Of Harvard College | Preparation of carbide nanorods |
US6159620A (en) * | 1997-03-31 | 2000-12-12 | The Regents Of The University Of California | Single-electron solid state electronic device |
US6413489B1 (en) | 1997-04-15 | 2002-07-02 | Massachusetts Institute Of Technology | Synthesis of nanometer-sized particles by reverse micelle mediated techniques |
IL132412A0 (en) | 1997-04-18 | 2001-03-19 | Cabot Corp | Polishing pad for a semiconductor substrate |
US6126532A (en) | 1997-04-18 | 2000-10-03 | Cabot Corporation | Polishing pads for a semiconductor substrate |
US6060743A (en) | 1997-05-21 | 2000-05-09 | Kabushiki Kaisha Toshiba | Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same |
US7626192B2 (en) | 1997-05-27 | 2009-12-01 | State of Oregon Acting by the Through the State Board of Higher Education on Behalf of the University of Oregon | Scaffold-organized clusters and electronic devices made using such clusters |
US6054349A (en) | 1997-06-12 | 2000-04-25 | Fujitsu Limited | Single-electron device including therein nanocrystals |
AU3360897A (en) | 1997-07-04 | 1999-01-25 | Universiteit Utrecht | A metal particle, its preparation and use, and a material or device comprising the metal particle |
US6107008A (en) * | 1997-08-29 | 2000-08-22 | Lockheed Martin Energy Research | Ionizing radiation post-curing of objects produced by stereolithography and other methods |
JP3727449B2 (ja) | 1997-09-30 | 2005-12-14 | シャープ株式会社 | 半導体ナノ結晶の製造方法 |
AUPP004497A0 (en) | 1997-10-28 | 1997-11-20 | University Of Melbourne, The | Stabilized particles |
US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
US5990479A (en) | 1997-11-25 | 1999-11-23 | Regents Of The University Of California | Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes |
JP2000022129A (ja) | 1998-04-30 | 2000-01-21 | Mitsubishi Chemicals Corp | ウエットプロセスによって作製したパターニングされた発光または光学的偏光特性を有する半導体ナノ粒子配列からなる多色デバイス |
US6117000A (en) | 1998-07-10 | 2000-09-12 | Cabot Corporation | Polishing pad for a semiconductor substrate |
US6139626A (en) | 1998-09-04 | 2000-10-31 | Nec Research Institute, Inc. | Three-dimensionally patterned materials and methods for manufacturing same using nanocrystals |
KR20010099655A (ko) | 1998-09-28 | 2001-11-09 | 블라디미르 맨체프스키 | Mems 장치의 기능 소자로서의 탄소 나노튜브를제조하기 위한 방법 |
US6936484B2 (en) | 1998-10-16 | 2005-08-30 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method of manufacturing semiconductor device and semiconductor device |
JP3595718B2 (ja) | 1999-03-15 | 2004-12-02 | 株式会社東芝 | 表示素子およびその製造方法 |
JP2000349275A (ja) | 1999-06-01 | 2000-12-15 | Nec Corp | 単一電子素子とその製造方法 |
JP2003504857A (ja) | 1999-07-02 | 2003-02-04 | プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ | ナノスコピックワイヤを用いる装置、アレイおよびその製造方法 |
WO2001006570A1 (de) | 1999-07-20 | 2001-01-25 | Infineon Technologies Ag | Nichtflüchtige halbleiterspeicherzelle und verfahren zur herstellung derselben |
US6624086B1 (en) | 1999-09-15 | 2003-09-23 | Texas Instruments Incorporated | Effective solution and process to wet-etch metal-alloy films in semiconductor processing |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
US6597496B1 (en) | 1999-10-25 | 2003-07-22 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle stimulated emission devices |
US6984842B1 (en) | 1999-10-25 | 2006-01-10 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle field effect transistor and transistor memory device |
JP2001168317A (ja) | 1999-12-13 | 2001-06-22 | Nec Corp | 金属微粒子秩序構造形成方法 |
US6225198B1 (en) | 2000-02-04 | 2001-05-01 | The Regents Of The University Of California | Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process |
US6306736B1 (en) | 2000-02-04 | 2001-10-23 | The Regents Of The University Of California | Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process |
US6320784B1 (en) | 2000-03-14 | 2001-11-20 | Motorola, Inc. | Memory cell and method for programming thereof |
AU2001257121A1 (en) * | 2000-04-21 | 2001-11-07 | Science & Technology Corporation @ Unm | Prototyping of patterned functional nanostructures |
US6297095B1 (en) * | 2000-06-16 | 2001-10-02 | Motorola, Inc. | Memory device that includes passivated nanoclusters and method for manufacture |
US6344403B1 (en) | 2000-06-16 | 2002-02-05 | Motorola, Inc. | Memory device and method for manufacture |
US6413819B1 (en) | 2000-06-16 | 2002-07-02 | Motorola, Inc. | Memory device and method for using prefabricated isolated storage elements |
WO2002003472A2 (en) | 2000-06-29 | 2002-01-10 | California Institute Of Technology | Aerosol silicon nanoparticles for use in semiconductor device fabrication |
DE10036897C1 (de) | 2000-07-28 | 2002-01-03 | Infineon Technologies Ag | Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors |
KR100984585B1 (ko) | 2000-08-22 | 2010-09-30 | 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 | 반도체 성장 방법 및 디바이스 제조 방법 |
CA2424415C (en) | 2000-10-04 | 2010-09-28 | The Board Of Trustees Of The University Of Arkansas | Synthesis of colloidal nanocrystals |
US20050101063A1 (en) | 2000-10-24 | 2005-05-12 | Tour James M. | Three-terminal field-controlled molecular devices |
JP4802363B2 (ja) | 2000-11-29 | 2011-10-26 | 日本電気株式会社 | 電界放出型冷陰極及び平面画像表示装置 |
US6576291B2 (en) | 2000-12-08 | 2003-06-10 | Massachusetts Institute Of Technology | Preparation of nanocrystallites |
WO2002048701A2 (en) | 2000-12-11 | 2002-06-20 | President And Fellows Of Harvard College | Nanosensors |
US6562633B2 (en) | 2001-02-26 | 2003-05-13 | International Business Machines Corporation | Assembling arrays of small particles using an atomic force microscope to define ferroelectric domains |
US6951707B2 (en) * | 2001-03-08 | 2005-10-04 | Ppg Industries Ohio, Inc. | Process for creating vias for circuit assemblies |
GB0107410D0 (en) * | 2001-03-23 | 2001-05-16 | Koninkl Philips Electronics Nv | Electronic devices comprising thin-film transistors,and their manufacture |
US6680505B2 (en) | 2001-03-28 | 2004-01-20 | Kabushiki Kaisha Toshiba | Semiconductor storage element |
CN1140907C (zh) | 2001-04-02 | 2004-03-03 | 中国科学院长春应用化学研究所 | 可控纳米导线的物理化学制备方法 |
US20020197404A1 (en) | 2001-04-12 | 2002-12-26 | Chang Chun Plastics Co., Ltd., Taiwan R.O.C. | Method of activating non-conductive substrate for use in electroless deposition |
US7084507B2 (en) | 2001-05-02 | 2006-08-01 | Fujitsu Limited | Integrated circuit device and method of producing the same |
US20020171125A1 (en) | 2001-05-17 | 2002-11-21 | Zhenan Bao | Organic semiconductor devices with short channels |
GB2377026A (en) * | 2001-06-29 | 2002-12-31 | Imp College Innovations Ltd | Electrically addressable electrochemical cell array |
US7186381B2 (en) * | 2001-07-20 | 2007-03-06 | Regents Of The University Of California | Hydrogen gas sensor |
US6753538B2 (en) | 2001-07-27 | 2004-06-22 | Fei Company | Electron beam processing |
CA2455938C (en) | 2001-07-30 | 2012-04-17 | The Board Of Trustees Of The University Of Arkansas | Colloidal nanocrystals with high photoluminescence quantum yields and methods of preparing the same |
US7070472B2 (en) | 2001-08-29 | 2006-07-04 | Motorola, Inc. | Field emission display and methods of forming a field emission display |
US6891319B2 (en) | 2001-08-29 | 2005-05-10 | Motorola, Inc. | Field emission display and methods of forming a field emission display |
JP4171268B2 (ja) | 2001-09-25 | 2008-10-22 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
WO2003050854A2 (en) | 2001-12-12 | 2003-06-19 | The Pennsylvania State University | Chemical reactor templates: sacrificial layer fabrication and template use |
TWI256688B (en) | 2002-02-01 | 2006-06-11 | Grand Plastic Technology Corp | Method for wet etching of high k thin film at low temperature |
JP2004038142A (ja) * | 2002-03-03 | 2004-02-05 | Shipley Co Llc | ポリシロキサンを製造する方法及びそれを含むフォトレジスト組成物 |
CN1656856B (zh) | 2002-03-29 | 2013-07-17 | 麻省理工学院 | 包含半导体纳米晶体的发光器件 |
US20040026684A1 (en) | 2002-04-02 | 2004-02-12 | Nanosys, Inc. | Nanowire heterostructures for encoding information |
US6872645B2 (en) | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
US6815750B1 (en) | 2002-05-22 | 2004-11-09 | Hewlett-Packard Development Company, L.P. | Field effect transistor with channel extending through layers on a substrate |
EP1514838B1 (en) | 2002-05-28 | 2009-07-22 | Panasonic Corporation | Process for producing nanoparticles |
US7005697B2 (en) | 2002-06-21 | 2006-02-28 | Micron Technology, Inc. | Method of forming a non-volatile electron storage memory and the resulting device |
JP4635410B2 (ja) | 2002-07-02 | 2011-02-23 | ソニー株式会社 | 半導体装置及びその製造方法 |
US6967172B2 (en) * | 2002-07-03 | 2005-11-22 | Honeywell International Inc. | Colloidal silica composite films for premetal dielectric applications |
US7311943B2 (en) | 2002-07-17 | 2007-12-25 | Massachusetts Institute Of Technology | Templated monolayer polymerization and replication |
JP4056817B2 (ja) | 2002-07-23 | 2008-03-05 | 光正 小柳 | 不揮発性半導体記憶素子の製造方法 |
JP2004087615A (ja) | 2002-08-23 | 2004-03-18 | Fujitsu Ltd | 半導体レーザの製造方法 |
US6831019B1 (en) | 2002-08-29 | 2004-12-14 | Micron Technology, Inc. | Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes |
US6878871B2 (en) | 2002-09-05 | 2005-04-12 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
WO2004022714A2 (en) | 2002-09-05 | 2004-03-18 | Nanosys, Inc. | Organic species that facilitate charge transfer to or from nanostructures |
US20050079282A1 (en) | 2002-09-30 | 2005-04-14 | Sungho Jin | Ultra-high-density magnetic recording media and methods for making the same |
US7067867B2 (en) * | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
GB2395059B (en) * | 2002-11-05 | 2005-03-16 | Imp College Innovations Ltd | Structured silicon anode |
US7692218B2 (en) | 2002-11-19 | 2010-04-06 | William Marsh Rice University | Method for creating a functional interface between a nanoparticle, nanotube or nanowire, and a biological molecule or system |
US6893966B2 (en) * | 2002-11-27 | 2005-05-17 | International Business Machines Corporation | Method of patterning the surface of an article using positive microcontact printing |
US6768156B1 (en) | 2003-02-10 | 2004-07-27 | Micron Technology, Inc. | Non-volatile random access memory cells associated with thin film constructions |
WO2005022120A2 (en) | 2003-03-11 | 2005-03-10 | Nanosys, Inc. | Process for producing nanocrystals and nanocrystals produced thereby |
US6858372B2 (en) * | 2003-03-24 | 2005-02-22 | The United States Of America As Represented By The Secretary Of The Navy | Resist composition with enhanced X-ray and electron sensitivity |
US6784103B1 (en) | 2003-05-21 | 2004-08-31 | Freescale Semiconductor, Inc. | Method of formation of nanocrystals on a semiconductor structure |
US7045851B2 (en) | 2003-06-20 | 2006-05-16 | International Business Machines Corporation | Nonvolatile memory device using semiconductor nanocrystals and method of forming same |
CN1809790A (zh) * | 2003-06-23 | 2006-07-26 | 陶氏康宁公司 | 使用灰度级光刻蚀法的粘合方法 |
CA2532991A1 (en) | 2003-08-04 | 2005-02-24 | Nanosys, Inc. | System and process for producing nanowire composites and electronic substrates therefrom |
US7274035B2 (en) | 2003-09-03 | 2007-09-25 | The Regents Of The University Of California | Memory devices based on electric field programmable films |
JP2007505991A (ja) | 2003-09-04 | 2007-03-15 | ナノシス・インク. | ナノ結晶の処理方法、並びに前記ナノ結晶を含む組成物、装置及びシステム |
JP2007534150A (ja) | 2003-09-24 | 2007-11-22 | ナノ クラスター デバイシス リミテッド | テンプレート集合ナノクラスタを利用するエッチマスク |
WO2005036599A2 (en) | 2003-10-06 | 2005-04-21 | Massachusetts Institute Of Technology | Non-volatile memory device |
US6927454B2 (en) | 2003-10-07 | 2005-08-09 | International Business Machines Corporation | Split poly-SiGe/poly-Si alloy gate stack |
KR100697511B1 (ko) * | 2003-10-21 | 2007-03-20 | 삼성전자주식회사 | 광경화성 반도체 나노결정, 반도체 나노결정 패턴형성용 조성물 및 이들을 이용한 반도체 나노결정의 패턴 형성 방법 |
US20050139867A1 (en) | 2003-12-24 | 2005-06-30 | Saito Shin-Ichi | Field effect transistor and manufacturing method thereof |
US20050151126A1 (en) | 2003-12-31 | 2005-07-14 | Intel Corporation | Methods of producing carbon nanotubes using peptide or nucleic acid micropatterning |
JP4789809B2 (ja) | 2004-01-15 | 2011-10-12 | サムスン エレクトロニクス カンパニー リミテッド | ナノ結晶をドーピングしたマトリックス |
US20050202615A1 (en) | 2004-03-10 | 2005-09-15 | Nanosys, Inc. | Nano-enabled memory devices and anisotropic charge carrying arrays |
US7595528B2 (en) | 2004-03-10 | 2009-09-29 | Nanosys, Inc. | Nano-enabled memory devices and anisotropic charge carrying arrays |
JP4425774B2 (ja) | 2004-03-11 | 2010-03-03 | 三星モバイルディスプレイ株式會社 | 垂直電界効果トランジスタ、それによる垂直電界効果トランジスタの製造方法及びそれを備える平板ディスプレイ装置 |
CN1320931C (zh) | 2004-05-14 | 2007-06-13 | 中国科学院长春应用化学研究所 | 含药物、壳聚糖的聚乙烯醇水凝胶敷料及其制备方法 |
WO2006076036A2 (en) | 2004-05-25 | 2006-07-20 | The Trustees Of The University Of Pennsylvania | Nanostructure assemblies, methods and devices thereof |
US7968273B2 (en) | 2004-06-08 | 2011-06-28 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US8088483B1 (en) | 2004-06-08 | 2012-01-03 | Nanosys, Inc. | Process for group 10 metal nanostructure synthesis and compositions made using same |
US7776758B2 (en) | 2004-06-08 | 2010-08-17 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
TWI406890B (zh) | 2004-06-08 | 2013-09-01 | Sandisk Corp | 奈米結構之沉積後包封:併入該包封體之組成物、裝置及系統 |
US8563133B2 (en) | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
CN102064102B (zh) | 2004-06-08 | 2013-10-30 | 桑迪士克公司 | 形成单层纳米结构的方法和器件以及包含这种单层的器件 |
US7557028B1 (en) | 2004-07-28 | 2009-07-07 | Nanosys, Inc. | Process for group III-V semiconductor nanostructure synthesis and compositions made using same |
CN101288028B (zh) * | 2004-08-11 | 2013-12-11 | 陶氏康宁公司 | 形成用于传感器应用的半渗透膜的可光聚合的聚硅氧烷材料 |
US7297041B2 (en) | 2004-10-04 | 2007-11-20 | The Board Of Trustees Of The University Of Illinois | Method of manufacturing microdischarge devices with encapsulated electrodes |
KR100620223B1 (ko) * | 2004-12-31 | 2006-09-08 | 동부일렉트로닉스 주식회사 | 스플릿 게이트 플래쉬 이이피롬의 제조방법 |
US8178165B2 (en) | 2005-01-21 | 2012-05-15 | The Regents Of The University Of California | Method for fabricating a long-range ordered periodic array of nano-features, and articles comprising same |
US7309650B1 (en) | 2005-02-24 | 2007-12-18 | Spansion Llc | Memory device having a nanocrystal charge storage region and method |
JP5377962B2 (ja) | 2005-08-19 | 2013-12-25 | ナノシス・インク. | 電子グレード金属ナノ構造 |
US7626190B2 (en) | 2006-06-02 | 2009-12-01 | Infineon Technologies Ag | Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device |
US20080150009A1 (en) | 2006-12-20 | 2008-06-26 | Nanosys, Inc. | Electron Blocking Layers for Electronic Devices |
US20080150003A1 (en) | 2006-12-20 | 2008-06-26 | Jian Chen | Electron blocking layers for electronic devices |
WO2008085813A2 (en) | 2007-01-03 | 2008-07-17 | Nanosys, Inc, Et Al. | Methods for nanopatterning and production of nanostructures |
US20080165569A1 (en) | 2007-01-04 | 2008-07-10 | Chieh-Fang Chen | Resistance Limited Phase Change Memory Material |
US7851784B2 (en) | 2007-02-13 | 2010-12-14 | Nano-Electronic And Photonic Devices And Circuits, Llc | Nanotube array electronic devices |
US8030161B2 (en) | 2007-05-23 | 2011-10-04 | Nanosys, Inc. | Gate electrode for a nonvolatile memory cell |
US7723186B2 (en) | 2007-12-18 | 2010-05-25 | Sandisk Corporation | Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer |
-
2006
- 2006-07-28 US US11/495,188 patent/US7776758B2/en active Active
-
2007
- 2007-07-27 JP JP2009522811A patent/JP5254229B2/ja not_active Expired - Fee Related
- 2007-07-27 KR KR1020097003931A patent/KR101376722B1/ko not_active IP Right Cessation
- 2007-07-27 WO PCT/US2007/016948 patent/WO2008013959A2/en active Application Filing
- 2007-07-27 CN CN2007800284957A patent/CN101512754B/zh not_active Expired - Fee Related
- 2007-07-27 EP EP07797046.5A patent/EP2052407B1/en not_active Not-in-force
-
2010
- 2010-06-29 US US12/803,568 patent/US8507390B2/en active Active
-
2013
- 2013-02-26 JP JP2013036437A patent/JP5710668B2/ja not_active Expired - Fee Related
- 2013-08-01 US US13/956,483 patent/US8735226B2/en not_active Expired - Fee Related
-
2014
- 2014-04-11 US US14/251,092 patent/US8871623B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210009147A (ko) * | 2019-07-16 | 2021-01-26 | 현대자동차주식회사 | 양자점을 이용한 광센서 제조 방법 및 그 제조 방법에 의해 제조되는 광센서 |
KR102664336B1 (ko) | 2019-07-16 | 2024-05-09 | 현대자동차주식회사 | 양자점을 이용한 광센서 제조 방법 및 그 제조 방법에 의해 제조되는 광센서 |
Also Published As
Publication number | Publication date |
---|---|
KR101376722B1 (ko) | 2014-03-27 |
JP2009545883A (ja) | 2009-12-24 |
EP2052407A4 (en) | 2011-05-25 |
US8871623B2 (en) | 2014-10-28 |
JP2013149986A (ja) | 2013-08-01 |
WO2008013959A2 (en) | 2008-01-31 |
US8735226B2 (en) | 2014-05-27 |
CN101512754B (zh) | 2011-12-28 |
US20140206182A1 (en) | 2014-07-24 |
US7776758B2 (en) | 2010-08-17 |
WO2008013959A3 (en) | 2008-04-03 |
US20130337642A1 (en) | 2013-12-19 |
JP5710668B2 (ja) | 2015-04-30 |
EP2052407B1 (en) | 2015-07-01 |
KR20090046871A (ko) | 2009-05-11 |
US8507390B2 (en) | 2013-08-13 |
US20110034038A1 (en) | 2011-02-10 |
EP2052407A2 (en) | 2009-04-29 |
US20070032091A1 (en) | 2007-02-08 |
CN101512754A (zh) | 2009-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5710668B2 (ja) | ナノ構造アレイの形成方法 | |
US8558304B2 (en) | Methods and devices for forming nanostructure monolayers and devices including such monolayers | |
JP5000510B2 (ja) | ナノ構造単層の形成方法および形成デバイスならびにかかる単層を含むデバイス | |
KR101255001B1 (ko) | 나노구조체 단일층을 형성하기 위한 방법 및 장치와 그러한 단일층을 포함하는 장치 | |
US8815683B2 (en) | Nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes and a method for fabricating the same | |
JP2008506254A (ja) | ナノワイヤーの集積及び組み込みのためのシステムおよび方法 | |
JP2009545883A5 (ja) | ||
US10096734B2 (en) | Methods of forming colloidal nanocrystal-based thin film devices | |
KR100979190B1 (ko) | 플로팅 게이트, 플로팅 게이트 형성방법, 이를 이용한비휘발성 메모리 장치 및 그 제조방법 | |
Choi | Development of step junction for molecular electronics |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100722 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100722 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20100830 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100831 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100915 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20111108 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20121016 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20121016 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121127 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130319 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130417 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5254229 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160426 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees | ||
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |