JP2013149986A - ナノ構造アレイの形成方法 - Google Patents
ナノ構造アレイの形成方法 Download PDFInfo
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- JP2013149986A JP2013149986A JP2013036437A JP2013036437A JP2013149986A JP 2013149986 A JP2013149986 A JP 2013149986A JP 2013036437 A JP2013036437 A JP 2013036437A JP 2013036437 A JP2013036437 A JP 2013036437A JP 2013149986 A JP2013149986 A JP 2013149986A
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Abstract
【解決手段】ナノ構造アレイの形成方法は、第1層を提供する段階と;液体形態のスピンオン誘電体を含有する溶液に分散したナノ構造を提供する段階であって、液体形態のスピンオン誘電体がシルセスキオキサンを含む前記段階と;ナノ構造が第1層上に単層アレイを形成するように、前記溶液を第1層上に配置する段階と;液体形態のスピンオン誘電体を硬化させ、単層アレイにおけるナノ構造がランダムに分配されたマトリックスとして固体形態のスピンオン誘電体を提供する段階を含む。
【選択図】図5
Description
本願は米国特許出願第11/495,188号(出願日2006年7月28日,発明の名称「ナノ構造単層を形成するための方法及びデバイス並びに前記単層を含むデバイス(METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS)」)の一部継続出願であり、その開示内容全体を全目的で本明細書に援用する。
本発明は主にナノテクノロジーの分野に関する。より詳細には、本発明はナノ構造アレイの形成方法に関する。
硬化したスピンオン誘電体とそこに含まれるナノ構造を除去せずに、未硬化スピンオン誘電体とそこに含まれるナノ構造を第1層から除去する段階を含む、と良い。
特に定義しない限り、本明細書で使用する全科学技術用語は本発明が属する分野の当業者に通常理解されている通りの意味をもつ。以下の定義は当分野の定義を補足し、本願に関するものであり、関連又は非関連ケース(例えば同一名義の特許又は出願)に帰属するものではない。本発明の試験の実施には本明細書に記載するものに類似又は等価の任意方法及び材料を使用することができるが、好ましい材料と方法は本明細書に記載する。従って、本明細書で使用する用語は特定態様の記載のみを目的とし、限定的ではない。
1側面において、本発明はナノ構造アレイ、例えばナノ構造の規則配列又は不規則配列単層アレイを形成するための方法を提供する。アレイは場合により規定位置に形成され、及び/又は規定寸法をもつ。前記方法に関連するデバイスと、ナノ構造アレイを含むデバイスも提供する。例えば、1側面において、本発明はナノ構造の小型単層アレイを含むメモリデバイスを提供する。
ナノ構造アレイを形成しようとする表面に化学的組成物、例えば表面自体よりもナノ構造に対して高い親和性をもつ組成物をコーティングすることができる。このようなコーティングは例えば表面へのナノ構造の接着を助長し、従って、単層の形成を助長することができる。
上記のように、ナノ構造単層は多数の用途に望ましい。例えば、ナノ結晶フラッシュメモリデバイスを作製するためにはトンネル酸化物上に量子ドット単層を形成することが望ましい。ナノ結晶型フラッシュメモリデバイス(又は他のナノ構造型デバイス)の性能はナノ構造密度の変動により少なくとも部分的に決定され得るので、ナノ構造密度変動の少ない高密度単層が望ましい。他方、ナノドットの不完全なサイズ分布は自己集合のコヒーレンス長に影響を与えるので、基板にドットを被覆しただけ(例えばナノ構造会合基を含む組成物で表面を修飾しない基板や、ドットをマトリックス材料に分散しない基板等)では、一般に局在ドット集合となり、相互間に粒界が形成される。自己集合コヒーレンス長はドットのサイズ分布に依存するので、集合プロセスの品質はドットのサイズ分布により制限されており、得られる集合の品質を改善することが課題となっている。溶液相化学では通常、10%未満のサイズ分布が得られるが、従来のCVD及びPVDアプローチによる粒度分布は約20%〜25%である。
本発明の1側面は単層品質を改善するために使用することができる溶媒アニール法を提供する。量子ドット又は他のナノ構造を表面に堆積した後、溶媒アニールを使用し、ナノ構造を溶媒蒸気に暴露し、表面のナノ構造に多少の短距離移動性を導入し、こうして単層集合品質を改善することができる。
れの作製においても重要な段階である。現在の量子ドット単層形成技術は一般に過剰のドットを使用している。例えば、ウェーハに量子ドットをスピンコートする場合には、ドットの大半(一般にドットの>95%)が薬液廃液に遠心廃棄される。これらの過剰のドットは汚染と品質管理の問題により一般に再利用のために回収することができない。従って、特にナノ構造デバイスの大量生産には、ドット消費を最小限にする技術が望ましい。
上記所定方法は得られる単層ナノ構造アレイのサイズ、形状、及び/又は位置を規定することができる。レジスト、例えばフォトレジストの使用も単層アレイのこのようなパターニングを助長することができる。
本発明の1側面はナノ構造アレイを形成するためのデバイスと前記デバイスの使用方法を提供する。従って、1つの一般分類の態様は第1層と、第2層と、第1層と第2層の間のキャビティと、1個以上のスペーサと、少なくとも1個のアパーチャを含むデバイスを提供する。1個以上のスペーサは第1層と第2層の間に配置され、第1層と第2層の間に距離を維持する。少なくとも1個のアパーチャはキャビティを外部雰囲気と連通させる。キャビティはナノ構造集団により占められる。
上記方法及びデバイスはナノ構造アレイを規定位置に作製するために使用することができ、これらのアレイはメモリデバイス、LED等のデバイスに組込むことができる。従って、1側面において、本発明は規定位置及び/又はサイズのアレイを含むナノ構造アレイを含むデバイスを提供する。
前記方法及びデバイスで使用される個々のナノ構造としては限定されないが、ナノ結晶、量子ドット、ナノドット、ナノ粒子、ナノワイヤー、ナノロッド、ナノチューブ、ナノテトラポッド、トライポッド、バイポッド、分岐ナノ構造、又は分岐テトラポッドが挙げられる。1側面において、前記方法及びデバイスは球形、略球形、及び/又は等方性ナノ結晶(例えばナノドット及び/又は量子ドット)を含み、例えば平均直径約10nm未満、場合により約8nm、6nm、5nm、又は4nm未満の実質的に球状のナノ構造又は量子ドットを含む。
Claims (15)
- 第1層を提供する段階と;
液体形態のスピンオン誘電体を含有する溶液に分散したナノ構造を提供する段階であって、液体形態のスピンオン誘電体がシルセスキオキサンを含む前記段階と;
ナノ構造が第1層上に単層アレイを形成するように、前記溶液を第1層上に配置する段階と;
液体形態のスピンオン誘電体を硬化させ、単層アレイにおけるナノ構造がランダムに分配されたマトリックスとして固体形態のスピンオン誘電体を提供する段階を含む、ナノ構造アレイの形成方法。 - 第1層を提供する段階と;
液体形態のスピンオン誘電体を含有する溶液に分散したナノ構造を提供する段階と;
ナノ構造が第1層上に単層アレイを形成するように、前記溶液を第1層上に配置する段階と;
液体形態のスピンオン誘電体を硬化させ、単層アレイにおけるナノ構造がランダムに分配されたマトリックスとして固体形態のスピンオン誘電体を提供する段階であって、前記固体形態のスピンオン誘電体が酸化ケイ素、酸化アルミニウム、酸化ハフニウム、酸化ランタン、又は酸化タンタルを含む前記段階と
を含む、ナノ構造アレイの形成方法。 - 第1層が誘電体材料、酸化物、窒化物、酸化ケイ素、窒化ケイ素、酸化ハフニウム、及びアルミナから構成される群から選択される材料を含む請求項1又は2に記載の方法。
- 第1層を基板上に配置し、前記基板が半導体を含み、第1層が誘電体材料を含み、厚さ1nm〜10nmである請求項1又は2に記載の方法。
- 基板がソース領域と、ドレイン領域と、ソース領域とドレイン領域の間でナノ構造の単層アレイの下に配置されたチャネル領域を含み;前記方法がゲート電極を固体形態のスピンオン誘電体上に配置する段階を含む請求項4に記載の方法。
- ゲート電極を固体形態のスピンオン誘電体上に配置する前に誘電体層を固体形態のスピンオン誘電体上に配置する段階を含む請求項5に記載の方法。
- 第1層上に溶液を配置する段階が前記溶液を第1層にスピンコートする段階を含む請求項1又は2に記載の方法。
- 固体形態のスピンオン誘電体が酸化ケイ素を含む請求項1に記載の方法。
- 液体形態のスピンオン誘電体が液体形態のスピンオングラスであり、固体形態のスピンオン誘電体が固体形態のスピンオングラスである請求項2に記載の方法。
- 液体形態のスピンオン誘電体がシルセスキオキサンを含む光重合性化合物を含む、請求項1又は2に記載の方法であって、前記方法が、
第1層の少なくとも第1領域と前記領域上に配置された溶液に適切な波長の光を照射し、第1領域のスピンオン誘電体を硬化させると同時に、第1層の少なくとも第2領域と前記領域上に配置された溶液を光から保護し、第2領域のスピンオン誘電体を未硬化状態に維持する段階と;
硬化したスピンオン誘電体とそこに含まれるナノ構造を除去せずに、未硬化スピンオン誘電体とそこに含まれるナノ構造を第1層から除去する段階を含む、方法。 - ナノ構造がパラジウム、白金、ニッケル、又はルテニウムを含む請求項1又は2に記載の方法。
- 第1層を提供する段階と;
ナノ構造集団を第1層に堆積する段階と;
ナノ構造が単層アレイとして集合するように、第1層に堆積したナノ構造を外部溶媒蒸気に暴露する段階を含む、ナノ構造アレイの形成方法。 - ナノ構造を外部溶媒蒸気に暴露する段階が、第1の溶媒を液体形態で提供する段階と、
第1の溶媒を加熱して溶媒蒸気を発生させる段階を含む請求項12に記載の方法。 - ナノ構造集団を第1層に堆積する段階が、少なくとも1種類の第2の溶媒を含有する溶液にナノ構造を分散させる段階と、溶液を第1層上に配置する段階を含む請求項12に記載の方法。
- ナノ構造が実質的に球状のナノ構造又は量子ドットを含む請求項12に記載の方法。
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WO2008013959A2 (en) | 2008-01-31 |
US8735226B2 (en) | 2014-05-27 |
US20070032091A1 (en) | 2007-02-08 |
CN101512754A (zh) | 2009-08-19 |
KR20090046871A (ko) | 2009-05-11 |
EP2052407A4 (en) | 2011-05-25 |
US20140206182A1 (en) | 2014-07-24 |
JP2009545883A (ja) | 2009-12-24 |
JP5710668B2 (ja) | 2015-04-30 |
EP2052407A2 (en) | 2009-04-29 |
WO2008013959A3 (en) | 2008-04-03 |
US20110034038A1 (en) | 2011-02-10 |
CN101512754B (zh) | 2011-12-28 |
KR101376722B1 (ko) | 2014-03-27 |
US20130337642A1 (en) | 2013-12-19 |
US7776758B2 (en) | 2010-08-17 |
US8507390B2 (en) | 2013-08-13 |
EP2052407B1 (en) | 2015-07-01 |
US8871623B2 (en) | 2014-10-28 |
JP5254229B2 (ja) | 2013-08-07 |
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