JP2009521594A - プラズマ原子層堆積を実行する方法及びシステム - Google Patents
プラズマ原子層堆積を実行する方法及びシステム Download PDFInfo
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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Abstract
Description
Claims (39)
- 気相堆積システムにて基板上に薄膜を形成する方法であって:
前記気相堆積システム内に基板を配置する配置段階であり、前記気相堆積システムは前記基板の上方に処理空間を画成する、配置段階;
前記処理空間に気体状の薄膜前駆体を導入する段階;
前記処理空間への前記薄膜前駆体の導入に続いて、前記処理空間の容積を第1の大きさから第2の大きさまで拡大して拡大処理空間を形成する拡大段階;
前記拡大処理空間に還元ガスを導入する段階;及び
前記還元ガスから還元プラズマを形成する段階;
を有する方法。 - 前記還元プラズマを消滅させる段階;
前記処理空間の容積を前記第2の大きさから前記第1の大きさまで縮小する縮小段階;及び
前記薄膜前駆体を導入する段階、前記処理空間の容積を拡大する拡大段階、前記還元ガスを導入する段階、及び前記還元プラズマを形成する段階、を繰り返す段階;
を更に有する請求項1に記載の方法。 - 前記処理空間の容積を拡大する拡大段階は:
基板ステージを前記還元プラズマのプラズマ均一性を改善する位置まで移動させる移動段階
を有する、請求項1に記載の方法。 - 前記移動段階は:
前記プラズマ均一性が前記基板の直径にわたって2%より良好になる位置に前記基板ステージを配置すること
を有する、請求項3に記載の方法。 - 前記移動段階は:
前記プラズマ均一性が前記基板の直径にわたって1%より良好になる位置に前記基板ステージを配置すること
を有する、請求項4に記載の方法。 - 前記気体状の薄膜前駆体を導入する段階、前記還元ガスを導入する段階、及び前記還元プラズマを形成する段階は:
タンタル膜、タンタル窒化物膜、又はタンタル炭窒化物膜のうちの少なくとも1つを堆積すること
を有する、請求項1に記載の方法。 - 前記気体状の薄膜前駆体を導入する段階、前記還元ガスを導入する段階、及び前記還元プラズマを形成する段階は:
金属膜、金属酸化物膜、金属窒化物膜、金属珪化物膜、若しくは金属炭窒化物膜のうちの少なくとも1つ、又はこれらの膜の何れか1つの組み合わせを別々に堆積すること
を有する、請求項1に記載の方法。 - 前記気体状の薄膜前駆体を導入する段階、前記還元ガスを導入する段階、及び前記還元プラズマを形成する段階は:
Cu膜、Al膜、ジルコニウム酸化物膜、ハフニウム酸化物膜、シリコン酸化物膜、シリコン窒化物膜、チタン窒化物膜、若しくはGaN膜のうちの少なくとも1つ、又はこれらの膜の何れか1つの組み合わせを堆積すること
を有する、請求項1に記載の方法。 - 前記気体状の薄膜前駆体を導入する段階は:
前記気体状の薄膜前駆体を、シールドによって囲まれた前記基板の上方の領域内に導入すること
を有する、請求項1に記載の方法。 - 前記シールドの孔を介して前記気体状の薄膜前駆体を吸い出すことによって、前記基板の上方の前記領域から前記薄膜前駆体を排出する段階;
を更に有する請求項9に記載の方法。 - 前記還元プラズマを形成する段階は:
0.1MHzから100MHzまでの或る周波数でRFエネルギーを印加する段階
を有する、請求項1に記載の方法。 - 前記還元プラズマを形成する段階は:
10W/cm2未満の電力密度を有する還元プラズマを生成すること
を有する、請求項11に記載の方法。 - 前記還元プラズマを形成する段階は:
1W/cm2未満の電力密度を有する還元プラズマを生成すること
を有する、請求項11に記載の方法。 - 前記還元プラズマを20秒未満の期間だけ持続させる段階;
を更に有する、請求項11に記載の方法。 - 前記還元プラズマを5秒未満の期間だけ持続させる段階;
を更に有する、請求項11に記載の方法。 - 前記気体状の薄膜前駆体を導入する段階の後に、パージガスを導入する段階;
を更に有する、請求項1に記載の方法。 - 少なくとも前記還元プラズマの期間において、前記基板に基板バイアスを印加する段階;
を更に有する、請求項1に記載の方法。 - 前記基板バイアスを印加する段階は:
DC電圧、又は0.1MHzから100MHzまでの或る周波数を有するRF電圧の少なくとも一方で前記基板をバイアスすること
を有する、請求項17に記載の方法。 - 基板処理システムのプロセッサ上で実行されるプログラム命令を格納したコンピュータ読み取り可能媒体であって、前記プログラム命令は、前記プロセッサによって実行されるとき前記基板処理システムに、請求項1乃至18に記載された段階群の何れか1つを実行させる、コンピュータ読み取り可能媒体。
- 基板上に薄膜を気相堆積するシステムであって:
第1の容積を有する第1の処理空間、及び
前記第1の処理空間を含み、且つ前記第1の容積より大きい第2の容積を有する、第2の処理空間、
を含む処理チャンバーを有し;
前記第1の処理空間は原子層堆積用に構成されており;且つ
前記第2の処理空間は、前記第1の処理空間で堆積された層のプラズマ還元用に構成されている;
システム。 - 前記原子層堆積及び前記プラズマ還元反応の双方において前記基板を保持するように構成された基板ステージ;
を更に有する請求項20に記載のシステム。 - ガス供給口を有する第1のチャンバーアセンブリ;及び
前記基板ステージを支持し、且つ前記処理チャンバーの排気用の真空ポンプを支持するように構成された第2のチャンバーアセンブリ;
を更に有する請求項21に記載のシステム。 - 前記第1の処理空間は、前記基板ステージの最上部から前記第1のチャンバーアセンブリの前記ガス供給口まで20mm以下の間隔によって部分的に定められ、且つ
前記第2の処理空間は、前記基板ステージの最上部から前記第1のチャンバーアセンブリの前記ガス供給口まで20mm以上の間隔によって部分的に定められる、
請求項22に記載のシステム。 - 前記第1及び第2の処理空間の容積を変化させる方向に前記基板ステージを移動させるように構成された処理容積調整機構;
を更に有する請求項21に記載のシステム。 - 前記第2の処理空間は、高さの幅に対するアスペクト比が0.1より大きい空間を有する、
請求項20に記載のシステム。 - 前記第2の処理空間は、高さの幅に対するアスペクト比が0.5より大きい空間を有する、
請求項20に記載のシステム。 - 前記第1の処理空間の周辺端部を囲むように構成されたシールド;
を更に有する請求項20に記載のシステム。 - 前記シールドは有孔シールドから成る、請求項27に記載のシステム。
- 前記原子層堆積及び前記プラズマ還元反応の双方において前記基板を保持するように構成された基板ステージ;
を更に有し、
前記基板ステージは、前記周辺端部で前記シールドと接触するように構成された周辺突出部を有する、
請求項27に記載のシステム。 - 前記周辺突出部は前記周辺端部の封止を形成するように構成されている、請求項29に記載のシステム。
- 少なくとも前記第1の処理空間を排気するように構成された真空ポンプ;
を更に有する請求項29に記載のシステム。 - 前記処理チャンバーは、金属膜、金属酸化物膜、金属窒化物膜、金属珪化物膜、若しくは金属炭窒化物膜のうちの少なくとも1つ、又はこれらの膜の何れか1つの組み合わせ、の原子層堆積用に構成されている、請求項20に記載のシステム。
- ジルコニウム酸化物膜、ハフニウム酸化物膜、シリコン酸化物膜、シリコン窒化物膜、チタン窒化物膜、タンタル窒化物膜、タンタル炭窒化物膜、Cu膜、Al膜、Zn膜、Ta膜、Ti膜、W膜、タングステン窒化物膜、若しくはGaN膜のうちの少なくとも1つ、又はこれらの膜の何れか1つの組み合わせ、の原子層堆積用に構成されている、請求項20に記載のシステム。
- 0.1MHzから100MHzまでの或る周波数のRFエネルギーを出力するように構成されたRF電源;
を更に有する請求項20に記載のシステム。 - 前記RF電源に接続され、前記第1及び第2の処理空間の少なくとも一方内に前記RFエネルギーを結合させるように構成された電極;
を更に有する請求項34に記載のシステム。 - DC電圧、又は0.1MHzから100MHzまでの或る周波数のRF電圧の少なくとも一方を出力するように構成されたバイアス源;
を更に有する請求項20に記載のシステム。 - 前記基板にバイアスを印加するように構成された電極であり、RFバイアス源に接続され、前記基板上に前記RF電圧を結合させるように構成された電極;
を更に有する請求項36に記載のシステム。 - 前記処理チャンバー内でのプロセスを制御するように構成されたコントローラ;
を更に有する請求項20に記載のシステム。 - 前記コントローラは:
前記第1の処理空間に気体状の薄膜前駆体を導入し;
前記基板を保持する基板ステージの位置を前記第2の処理空間の底面を定める位置まで移動させて、拡大処理空間を形成し;
前記拡大処理空間内に還元ガスを導入し;且つ
前記還元ガスから還元プラズマを形成する;
ようにプログラムされている、請求項38に記載のシステム。
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PCT/US2006/043545 WO2007061633A2 (en) | 2005-11-18 | 2006-11-09 | Method and system for performing plasma enhanced atomic layer deposition |
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JP5312036B2 (ja) | 2013-10-09 |
TWI366609B (en) | 2012-06-21 |
TW200730661A (en) | 2007-08-16 |
CN101535524A (zh) | 2009-09-16 |
WO2007061633A2 (en) | 2007-05-31 |
KR101351657B1 (ko) | 2014-02-17 |
US7897217B2 (en) | 2011-03-01 |
WO2007061633A3 (en) | 2009-04-23 |
US20070116887A1 (en) | 2007-05-24 |
CN101535524B (zh) | 2013-03-06 |
KR20080070072A (ko) | 2008-07-29 |
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