JP5209197B2 - 熱およびプラズマ増強蒸着のための装置および操作方法 - Google Patents
熱およびプラズマ増強蒸着のための装置および操作方法 Download PDFInfo
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- JP5209197B2 JP5209197B2 JP2006311396A JP2006311396A JP5209197B2 JP 5209197 B2 JP5209197 B2 JP 5209197B2 JP 2006311396 A JP2006311396 A JP 2006311396A JP 2006311396 A JP2006311396 A JP 2006311396A JP 5209197 B2 JP5209197 B2 JP 5209197B2
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/12—Deposition of aluminium only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23C16/5096—Flat-bed apparatus
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Description
Claims (40)
- 基板に堆積物を形成するための、化学気相成長(CVD)または原子層堆積(ALD)を使用する堆積システムであって:
材料堆積のための処理空間を有する第1のアセンブリと;
前記第1のアセンブリに組み合わせられ、前記堆積システムとの間で前記基板の移送のための移送空間を有する第2のアセンブリと;
前記第2のアセンブリに接続され、前記処理空間の第1のボリュームを形成するように第2のアセンブリから第1の距離だけ垂直に離隔された第1の堆積位置から前記処理空間のサイズを第2のボリュームに変化するように第2のアセンブリから第2の距離だけ垂直に離隔された第2の堆積位置までの間を前記基板を支持し移動するように構成された基板ステージと;
前記処理空間内の前記第1の堆積位置と、前記第2の堆積位置との間の前記基板の移動の間のガス流れを妨げるように構成された封止を有するシーリングアセンブリと;を具備し、
前記第1のアセンブリは、前記第1のアセンブリから前記第2のアセンブリの方へ延びている内側のガス伝導のチャネルを有する延長を備えている堆積システム。 - 前記シーリングアセンブリは、前記第1の堆積位置から、前記基板が移送空間に存在するように第2のアセンブリから第3の距離だけ垂直に離隔された第3の位置まで前記基板の移動の間、封止を分離するように構成されている請求項1の堆積システム。
- 前記封止は、前記移送空間から前記処理空間を真空アイソレートするように構成されている請求項1の堆積システム。
- 前記封止は、10−3Torr−l/s未満に前記処理空間から前記移送空間までのガスリークを減少するように構成されている請求項3の堆積システム。
- 前記封止は、10−4Torr−l/s未満に前記処理空間から前記移送空間までのガスリークを減少するように構成されている請求項3の堆積システム。
- 前記第1のアセンブリに組み合わせられ、プロセスの間、前記処理空間を排気するように構成された第1の圧力制御システムと;
前記第2のアセンブリに組み合わせられ、前記移送空間を排気するように構成されている第2の圧力制御システムと;
前記第1のアセンブリに接続し、前記材料堆積の間、前記処理空間にプロセスガス組成を導入するように構成されているガス注入システムと;
前記基板ステージに組み合わせられ、前記基板の温度を制御するように構成された温度制御システムと;を更に具備する請求項1の堆積システム。 - 前記第1のアセンブリは、前記堆積システムの上部部分を備え、
前記第2のアセンブリは、前記堆積システムの下部部分を備え、
前記基板ステージは、前記基板を垂直方向に移動するように構成されている請求項1の堆積システム。 - 前記処理空間の前記プロセスガス組成からプラズマを形成するように、前記処理空間に結合され、前記プロセスガス組成にパワーを供給するように構成されている電源を更に具備する請求項6の堆積システム。
- 前記電源は、0.1から100MHzまでの周波数でRFエネルギを出力するように構成されているRF電力電源であり;
前記基板ステージは、前記RF電力電源に接続され、前記処理空間に前記RFエネルギを結合させるように構成されている電極を含んでいる請求項8の堆積システム。 - 前記内側のガス伝導のチャネルは、前記基板ステージの近くの延長の第1の側部から、前記第1の側部の反対側の前記延長の第2の側部までガスコンダクタンスを提供する請求項1の堆積システム。
- 前記延長は、前記延長の前記第1の側部の方へと外側に突き出ているシールプレートを備えている請求項10の堆積システム。
- 前記基板ステージは、前記第1のアセンブリの方へ基板ステージが移動されるときに前記延長のシールプレートに、接触するように構成されているフランジを備えている請求項11の堆積システム。
- 前記フランジは、前記シールプレートに対して封止するように構成されている前記封止を含む請求項12の堆積システム。
- 前記封止は、Oリング、先細エラストマ、または螺旋形のスプリング封止のうちの少なくとも1つを備えている請求項13の堆積システム。
- 前記先細エラストマは、三角形成形加工されたエラストマを備えている請求項14の堆積システム。
- 前記延長は、前記基板ステージの移動の方向に圧縮するように構成されているベローズユニットを備えている請求項1の堆積システム。
- 前記延長は、前記処理空間から封止部材を保護するために構成されているガードを備えている請求項1の堆積システム。
- 前記延長の部材は、前記基板ステージの方へ延びている少なくとも1つの長手方向のプレートを含んでいるスライダユニットを備え、
前記スライダユニットは、前記基板ステージの前記フランジに設置されている前記長手方向のプレートを受け入れるように対応したレセプタプレートに、封止を介して摺動するように係合する請求項1の堆積システム。 - 前記基板ステージは、前記第1のアセンブリの方へ前記基板ステージから延びていて、前記長手方向のプレートを挟み込むように構成されている前記レセプタプレートを備えている請求項18の堆積システム。
- 前記封止の部材は、前記レセプタプレートまたは長手方向のプレートのうちの少なくとも1つに配置されている請求項19の堆積システム。
- 基板に堆積物を形成するための、化学気相成長(CVD)または原子層堆積(ALD)を使用する堆積システムであって:
最も外側の壁と、材料堆積のための処理空間と、前記処理空間へのプロセスガスの導入のための注入プレートとを有する第1のアセンブリと;
前記第1のアセンブリの最も外側の壁に前記第2のアセンブリに接続するシールされた接合を介して前記第1のアセンブリに結合され、前記堆積システムとの間で前記基板の移送をするための移送空間を有する第2のアセンブリと;
前記第2のアセンブリに接続され、前記処理空間のサイズを変化するように前記処理空間の第1の堆積位置から前記処理空間の第2の堆積位置までの間を前記基板を支持し移動するように構成された基板ステージと;
前記処理空間内の前記第1の堆積位置と、前記第2の堆積位置との間の前記基板の移動の間のガス流れを妨げるように構成された封止を有するシーリングアセンブリと;を具備し、
前記第1のアセンブリは、前記最も外側の壁の内側に配置され、および、前記最も外側の壁から離隔された延長を備え、前記延長は、前記第1のアセンブリから前記第2のアセンブリの方へ延びている内側のガス伝導のチャネルを有する堆積システム。 - 移送空間から分離される処理空間を有する蒸着システムの基板上に材料を堆積するための、化学気相成長(CVD)または原子層堆積(ALD)を使用する方法であって、
移送空間から真空アイソレートされた前記処理空間に前記基板を配置することと;
前記移送空間から真空アイソレーションを維持する間、前記処理空間の第1のボリュームを形成する第1の堆積位置または前記処理空間の第2のボリュームを形成する第2の堆積位置のいずれかで前記基板を処理することと;
前記第1の堆積位置または前記第2の堆積位置のいずれかで前記基板上に材料を堆積させることとを具備する方法。 - 前記処理空間を100℃以上に維持することと、
前記移送空間を100℃未満に維持することとを更に具備する請求項22の方法。 - 前記処理空間を50℃以上に維持することと、
前記移送空間を50℃未満に維持することとを更に具備する請求項22の方法。 - 前記材料を堆積させることは、蒸着のための前記処理空間にプロセスガス組成を導入することを備えている請求項22の方法。
- 前記材料を堆積させることは、プラズマ増強蒸着のための前記処理空間にプロセスガス組成を導入することと、
前記プロセスガス組成からプラズマを形成することとを備えている請求項22の方法。 - 前記材料を堆積させることは、タンタル膜、タンタル炭化物、タンタル窒化膜、またはタンタル炭窒化物膜のうちの少なくとも1つを堆積させることを備えている請求項22の方法。
- 前記材料を堆積させることは、金属、金属炭化物、金属酸化物、金属窒化、金属炭窒化物、若しくは金属シリサイド、またはこれらの膜のいずれかの組合せのうちの少なくとも1つを堆積させることを備えている請求項22の方法。
- 前記配置することは、プラズマ増強ALD(PEALD)プロセス、またはプラズマ増強CVD(PECVD)プロセスのうちの少なくとも1つを実行するように構成されているチャンバに前記基板を配置していることを備えている請求項22の方法。
- 前記材料を堆積させることは、前記ALDプロセスを使用して第1の膜を堆積させることと;
前記PECVDまたは前記PEALDプロセスを使用して第2の膜を堆積させることとを備えている請求項29の方法。 - 前記材料を堆積させることは、前記CVDプロセスを使用して第1の膜を堆積させることと;
前記PECVDまたは前記PEALDプロセスを使用して第2の膜を堆積させることとを備えている請求項29の方法。 - 前記材料を堆積させることは、
前記ALDプロセスを使用して第1の膜を堆積させることと;
前記CVDプロセスを使用して第2の膜を堆積させることとを備えている請求項29の方法。 - 前記材料を堆積させることは、前記処理空間のプロセスガスに0.1から100MHzまでの周波数でRFエネルギを印加することである請求項31の方法。
- 前記材料を堆積させた後にパージガスを導入することを更に具備する請求項31の方法。
- 堆積される材料の基板を横切る堆積の均一性を改良する位置に、前記処理空間内の前記基板を移動することを更に具備する請求項22の方法。
- 前記材料を堆積させることは、前記処理空間のプラズマ均一性が300mmの直径の基板を横切る膜厚の均一性が2%より小さくなるような位置に、前記基板を保持している基板ステージの位置をセットすることと;
前記基板の上に材料堆積のためのプラズマを形成することとを備えている請求項22の方法。 - 前記セットすることは、前記基板ステージをプラズマ均一性が300mmの直径の基板を横切る膜厚の均一性が1%より小さくなるような位置にセットすることを備えている請求項36の方法。
- 前記基板を配置することは、前記処理空間から前記移送空間までのガスリークが10−3Torr−l/s未満を有する処理空間に前記基板を配置することを備えている請求項22の方法。
- 前記基板を配置することは、前記処理空間から前記移送空間までのガスリークが10−4Torr−l/s未満を有する処理空間に前記基板を配置することを備えている請求項22の方法。
- 基板処理システムプロセッサ上の実行のためのプログラム命令を含んでいるコンピュータ読み取り可能なメディアであって、
請求項22−39において詳述されるステップのいずれかを実行するように前記基板処理システムを起動するメディア。
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US20070116872A1 (en) | 2007-05-24 |
TW200733199A (en) | 2007-09-01 |
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