JP2009278103A - 金属層の間に挟まれたフリップチップダイを特徴とする半導体パッケージ - Google Patents

金属層の間に挟まれたフリップチップダイを特徴とする半導体パッケージ Download PDF

Info

Publication number
JP2009278103A
JP2009278103A JP2009116937A JP2009116937A JP2009278103A JP 2009278103 A JP2009278103 A JP 2009278103A JP 2009116937 A JP2009116937 A JP 2009116937A JP 2009116937 A JP2009116937 A JP 2009116937A JP 2009278103 A JP2009278103 A JP 2009278103A
Authority
JP
Japan
Prior art keywords
metal layer
die
power device
package
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009116937A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009278103A5 (https=
Inventor
Anthony C Tsui
シー．ツイ アンソニー
Mohammad Eslamy
エスラミー モハンマド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GEM Services Inc USA
Original Assignee
GEM Services Inc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GEM Services Inc USA filed Critical GEM Services Inc USA
Publication of JP2009278103A publication Critical patent/JP2009278103A/ja
Publication of JP2009278103A5 publication Critical patent/JP2009278103A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H10W70/427—Bent parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2009116937A 2008-05-15 2009-05-13 金属層の間に挟まれたフリップチップダイを特徴とする半導体パッケージ Pending JP2009278103A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5356108P 2008-05-15 2008-05-15
US12/186,342 US8358017B2 (en) 2008-05-15 2008-08-05 Semiconductor package featuring flip-chip die sandwiched between metal layers

Publications (2)

Publication Number Publication Date
JP2009278103A true JP2009278103A (ja) 2009-11-26
JP2009278103A5 JP2009278103A5 (https=) 2012-06-28

Family

ID=41315409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009116937A Pending JP2009278103A (ja) 2008-05-15 2009-05-13 金属層の間に挟まれたフリップチップダイを特徴とする半導体パッケージ

Country Status (3)

Country Link
US (2) US8358017B2 (https=)
JP (1) JP2009278103A (https=)
CN (1) CN101582403B (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013152983A (ja) * 2012-01-24 2013-08-08 Toyota Motor Corp 半導体装置の製造方法
KR101367065B1 (ko) 2012-10-30 2014-02-24 삼성전기주식회사 전력 모듈 패키지
KR101652423B1 (ko) * 2016-07-07 2016-08-30 제엠제코(주) 핑거 클립 본딩 반도체 패키지
WO2019159576A1 (ja) * 2018-02-13 2019-08-22 日立オートモティブシステムズ株式会社 電子制御装置
JP2019186321A (ja) * 2018-04-05 2019-10-24 ローム株式会社 半導体装置
WO2022196453A1 (ja) * 2021-03-18 2022-09-22 株式会社デンソー 半導体モジュール、および、これを用いた電子装置
US12489038B2 (en) 2020-11-10 2025-12-02 Samsung Electronics Co., Ltd. Semiconductor device package

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110024896A1 (en) * 2008-07-07 2011-02-03 Mitsubishi Electric Corporation Power semiconductor device
US8168490B2 (en) * 2008-12-23 2012-05-01 Intersil Americas, Inc. Co-packaging approach for power converters based on planar devices, structure and method
US8673687B1 (en) * 2009-05-06 2014-03-18 Marvell International Ltd. Etched hybrid die package
US8178954B2 (en) * 2009-07-31 2012-05-15 Alpha & Omega Semiconductor, Inc. Structure of mixed semiconductor encapsulation structure with multiple chips and capacitors
US8648458B2 (en) * 2009-12-18 2014-02-11 Nxp B.V. Leadframe circuit and method therefor
TWI453831B (zh) 2010-09-09 2014-09-21 台灣捷康綜合有限公司 半導體封裝結構及其製造方法
JP2012089563A (ja) * 2010-10-15 2012-05-10 Sanken Electric Co Ltd 半導体モジュール
JP5921072B2 (ja) * 2011-03-05 2016-05-24 新電元工業株式会社 樹脂封止型半導体装置
WO2011137733A2 (zh) * 2011-04-29 2011-11-10 华为技术有限公司 电源模块及其封装集成方法
US8310098B2 (en) 2011-05-16 2012-11-13 Unigen Corporation Switchable capacitor arrays for preventing power interruptions and extending backup power life
CN102201449B (zh) * 2011-05-27 2013-01-09 电子科技大学 一种功率mos器件低热阻封装结构
ITMI20111217A1 (it) * 2011-06-30 2012-12-31 St Microelectronics Srl Sistema contenitore/dissipatore per componente elettronico
ITMI20111219A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Sistema con dissipatore di calore condiviso
US8723311B2 (en) * 2011-06-30 2014-05-13 Stmicroelectronics S.R.L. Half-bridge electronic device with common heat sink on mounting surface
ITMI20111216A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo elettronico di potenza ad elevata dissipazione di calore e stabilita?
ITMI20111213A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo elettronico a semi-ponte con dissipatore di calore ausiliario comune
ITMI20111218A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo di potenza ad elevata velocita? di commutazione
ITMI20111208A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Sistema con dissipatore di calore stabilizzato
ITMI20111214A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo di potenza a spessore ridotto
US9041183B2 (en) * 2011-07-19 2015-05-26 Ut-Battelle, Llc Power module packaging with double sided planar interconnection and heat exchangers
US9601417B2 (en) * 2011-07-20 2017-03-21 Unigen Corporation “L” shaped lead integrated circuit package
US20160277017A1 (en) * 2011-09-13 2016-09-22 Fsp Technology Inc. Snubber circuit
US9698143B2 (en) 2012-09-07 2017-07-04 Fairchild Semiconductor Corporation Wireless module with active devices
CN103681557B (zh) * 2012-09-11 2017-12-22 恩智浦美国有限公司 半导体器件及其组装方法
US9589929B2 (en) 2013-03-14 2017-03-07 Vishay-Siliconix Method for fabricating stack die package
US9966330B2 (en) * 2013-03-14 2018-05-08 Vishay-Siliconix Stack die package
US9070657B2 (en) 2013-10-08 2015-06-30 Freescale Semiconductor, Inc. Heat conductive substrate for integrated circuit package
CN103594448A (zh) * 2013-11-15 2014-02-19 杰群电子科技（东莞）有限公司 一种引线框架
US9559064B2 (en) * 2013-12-04 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Warpage control in package-on-package structures
FR3023059B1 (fr) * 2014-06-25 2018-01-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit integre comportant un dissipateur de chaleur
US9431319B2 (en) 2014-08-01 2016-08-30 Linear Technology Corporation Exposed, solderable heat spreader for integrated circuit packages
US9425304B2 (en) 2014-08-21 2016-08-23 Vishay-Siliconix Transistor structure with improved unclamped inductive switching immunity
CN105489571B (zh) * 2014-09-15 2018-04-20 万国半导体(开曼)股份有限公司 一种带散热片的半导体封装及其封装方法
US10319674B2 (en) * 2014-10-29 2019-06-11 Infineon Technologies Americas Corp. Packaged assembly for high density power applications
US10685904B2 (en) 2014-11-21 2020-06-16 Delta Electronics, Inc. Packaging device and manufacturing method thereof
US10535587B2 (en) 2015-02-04 2020-01-14 Stmicroelectronics S.R.L. Integrated electronic device having a dissipative package, in particular dual side cooling package
US10332828B2 (en) * 2015-09-30 2019-06-25 Agile Power Switch 3D—Integration Apsi3D Semiconductor power device comprising additional tracks and method of manufacturing the semiconductor power device
WO2017091152A1 (en) * 2015-11-23 2017-06-01 Agency For Science, Technology And Research Wafer level integration of high power switching devices on cmos driver integrated circuit
US10586757B2 (en) 2016-05-27 2020-03-10 Linear Technology Corporation Exposed solderable heat spreader for flipchip packages
CN108400117A (zh) * 2017-02-06 2018-08-14 钰桥半导体股份有限公司 三维整合的散热增益型半导体组件及其制作方法
CN108400118A (zh) * 2017-02-06 2018-08-14 钰桥半导体股份有限公司 三维整合的半导体组件及其制作方法
JP6661565B2 (ja) * 2017-03-21 2020-03-11 株式会社東芝 半導体装置及びその製造方法
CN108133915B (zh) * 2017-12-21 2020-04-03 乐健科技（珠海）有限公司 功率器件内置且双面散热的功率模组及其制备方法
US10872848B2 (en) * 2018-10-25 2020-12-22 Infineon Technologies Ag Semiconductor package with leadframe interconnection structure
US11476232B2 (en) 2019-03-25 2022-10-18 Analog Devices International Unlimited Company Three-dimensional packaging techniques for power FET density improvement
US10879155B2 (en) * 2019-05-09 2020-12-29 Texas Instruments Incorporated Electronic device with double-sided cooling
CN112447614A (zh) * 2019-08-30 2021-03-05 朋程科技股份有限公司 功率器件封装结构
CN111540723A (zh) * 2020-05-06 2020-08-14 晏新海 功率半导体器件
KR102853084B1 (ko) 2020-10-26 2025-09-02 삼성전자주식회사 반도체 칩들을 갖는 반도체 패키지
US12136623B2 (en) * 2020-11-11 2024-11-05 Infineon Technologies Austria Ag Multi-device semiconductor chip with electrical access to devices at either side
CN112599504A (zh) * 2020-12-15 2021-04-02 华芯威半导体科技(北京)有限责任公司 一种大功率模块粗铜线键合结构
US12266590B2 (en) * 2021-07-14 2025-04-01 Semiconductor Components Industries, Llc Dual side direct cooling semiconductor package
JP7470086B2 (ja) * 2021-09-13 2024-04-17 株式会社東芝 半導体装置
CN114730747B (zh) * 2022-02-22 2023-04-04 香港应用科技研究院有限公司 带有冷却翅片的热增强型中介层的电源转换器封装结构
US12464669B2 (en) 2023-02-24 2025-11-04 Amkor Technology Singapore Holding Pte. Ltd. Electronic devices and methods of manufacturing electronic devices
TWI872547B (zh) * 2023-05-19 2025-02-11 強茂股份有限公司 內埋式線路封裝元件及其製法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005159238A (ja) * 2003-11-28 2005-06-16 Renesas Technology Corp 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6191478B1 (en) * 1999-06-07 2001-02-20 Agilent Technologies Inc. Demountable heat spreader and high reliability flip chip package assembly
US6731000B1 (en) * 2002-11-12 2004-05-04 Koninklijke Philips Electronics N.V. Folded-flex bondwire-less multichip power package
JP2005302951A (ja) * 2004-04-09 2005-10-27 Toshiba Corp 電力用半導体装置パッケージ
CN100390974C (zh) * 2004-08-20 2008-05-28 清华大学 一种大功率半导体器件用的大面积散热结构
US7705476B2 (en) * 2007-11-06 2010-04-27 National Semiconductor Corporation Integrated circuit package
US7619303B2 (en) * 2007-12-20 2009-11-17 National Semiconductor Corporation Integrated circuit package

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005159238A (ja) * 2003-11-28 2005-06-16 Renesas Technology Corp 半導体装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013152983A (ja) * 2012-01-24 2013-08-08 Toyota Motor Corp 半導体装置の製造方法
KR101367065B1 (ko) 2012-10-30 2014-02-24 삼성전기주식회사 전력 모듈 패키지
KR101652423B1 (ko) * 2016-07-07 2016-08-30 제엠제코(주) 핑거 클립 본딩 반도체 패키지
WO2019159576A1 (ja) * 2018-02-13 2019-08-22 日立オートモティブシステムズ株式会社 電子制御装置
JP2019186321A (ja) * 2018-04-05 2019-10-24 ローム株式会社 半導体装置
JP7137955B2 (ja) 2018-04-05 2022-09-15 ローム株式会社 半導体装置
US12489038B2 (en) 2020-11-10 2025-12-02 Samsung Electronics Co., Ltd. Semiconductor device package
WO2022196453A1 (ja) * 2021-03-18 2022-09-22 株式会社デンソー 半導体モジュール、および、これを用いた電子装置
JP2022144247A (ja) * 2021-03-18 2022-10-03 株式会社デンソー 半導体モジュール、および、これを用いた電子装置
JP7608901B2 (ja) 2021-03-18 2025-01-07 株式会社デンソー 半導体モジュール、および、これを用いた電子装置

Also Published As

Publication number Publication date
CN101582403A (zh) 2009-11-18
US20090283919A1 (en) 2009-11-19
CN101582403B (zh) 2012-04-04
US20130105974A1 (en) 2013-05-02
US8358017B2 (en) 2013-01-22

Similar Documents

Publication Publication Date Title
JP2009278103A (ja) 金属層の間に挟まれたフリップチップダイを特徴とする半導体パッケージ
US7618896B2 (en) Semiconductor die package including multiple dies and a common node structure
US9589868B2 (en) Packaging solutions for devices and systems comprising lateral GaN power transistors
US8951847B2 (en) Package leadframe for dual side assembly
US9698143B2 (en) Wireless module with active devices
US8129225B2 (en) Method of manufacturing an integrated circuit module
CN108155168B (zh) 电子器件
US20100193922A1 (en) Semiconductor chip package
US20120181676A1 (en) Power semiconductor device packaging
JP2005064479A (ja) 回路モジュール
EP3449502B1 (en) Mechanically-compliant and electrically and thermally conductive leadframes for component-on-package circuits
CN116895649A (zh) 包括多个功率晶体管的封装电子器件
US8072051B2 (en) Folded lands and vias for multichip semiconductor packages
US20120181677A1 (en) Semiconductor device package with two component lead frame
JP4695484B2 (ja) 半導体装置
CN113410185B (zh) 功率半导体器件封装结构及其制造方法
JP4556732B2 (ja) 半導体装置及びその製造方法
US20250140654A1 (en) Package carrier having large corner leads with lead tip inspection feature
US20240222234A1 (en) Package with low-warpage carrier
CN121693149A (zh) 半导体装置及其制造方法
HK1113228A1 (zh) 具有增强散热性的半导体封装结构
HK1106614A1 (zh) 用於垂直安装的半导体封装结构及方法
HK1113228B (en) Semiconductor package structure having enhanced thermal dissipation characteristics

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120514

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120514

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130129

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130625