JP2009224778A - 抵抗物質および内部電極を使用する不揮発性メモリ装置、これの製造方法、およびこれを含むプロセシングシステム - Google Patents
抵抗物質および内部電極を使用する不揮発性メモリ装置、これの製造方法、およびこれを含むプロセシングシステム Download PDFInfo
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
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Abstract
【解決手段】不揮発性メモリ装置は、基板の一面に実質的に垂直の方向に延長され形成された内部電極と、前記基板の一面に実質的に平行な方向に延長されて形成され、前記各内部電極の第1側に配置される第1外部電極と、前記基板の一面に実質的に平行な方向に延長されて形成され、前記各内部電極の第2側に配置される第1外部電極、および前記各内部電極、前記各第1外部電極、および前記各第2外部電極と接触する複数の可変抵抗体と、を含む。
【選択図】図1
Description
105 素子分離領域
110,111 アクティブ領域
120 シリサイド膜
210 ゲート絶縁膜
220 ワードライン
230 ゲートシリサイド膜
240 ゲートスペーサ
300 ビットライン
350,351 ビットラインコンタクト
410,1410 第1外部電極接続部
410_1,1410_1 第1外部電極
420,1420 第2外部電極接続部
420_2,1420_2 第2外部電極
330 第1層間絶縁膜
430 第2層間絶縁膜
500,501 内部電極
600,601 可変抵抗体
610,611,1611 可変抵抗体第1部位
620,621,1621 可変抵抗体第2部位
810 プロセッサ
820 ローカルバス
830 メモリコントローラ
840 メモリバス
850 入出力装置
860 メモリ装置
1500 コンタクトホール
Claims (20)
- 基板の一面に実質的に垂直の方向に延長され形成された内部電極と、
前記基板の一面に実質的に平行な方向に延長されて形成され、前記各内部電極の第1側に配置される第1外部電極と、
前記基板の一面に実質的に平行な方向に延長されて形成され、前記各内部電極の第2側に配置される第2外部電極、および
前記各内部電極、前記各第1外部電極、および前記各第2外部電極と接触する複数の可変抵抗体と、を含む不揮発性メモリ装置。 - 前記第1および第2外部電極は、前記内部電極の延長方向に沿って複数層で形成された、請求項1に記載の不揮発性メモリ装置。
- 前記可変抵抗体を選択する選択素子をさらに含み、
前記各選択素子は、複数の前記可変抵抗体を選択することができる請求項1に記載の不揮発性メモリ装置。 - 前記第1外部電極は互いに電気的に接続されており、前記第2外部電極は互いに電気的に接続されている、請求項1に記載の不揮発性メモリ装置。
- 前記基板内に形成されたアクティブ領域、前記第1および第2外部電極と実質的に同一の方向に延長されて形成され前記各アクティブ領域当たり2個ずつ接続されたワードライン、および前記内部電極および前記第1および第2外部電極と各々実質的に垂直の方向に延長されて形成され、前記ワードラインの間で前記アクティブ領域と接続されるビットラインをさらに含む、請求項1に記載の不揮発性メモリ装置。
- 前記アクティブ領域は、前記ビットラインと実質的に同一の方向に延長された第1領域および前記第1領域から前記ワードラインと実質的に同一の方向に突出した第2領域を含む、請求項5に記載の不揮発性メモリ装置。
- 前記内部電極は、前記各アクティブ領域当たり2個ずつ接続されるものの、前記1つのアクティブ領域に接続されたワードラインの一側の前記第1領域の最外殻に各々1個ずつ接続されて、前記ビットラインは、前記第2領域に接続される、請求項6に記載の不揮発性メモリ装置。
- 前記アクティブ領域は、前記ワードラインおよび前記ビットラインと鋭角を成す、請求項5に記載の不揮発性メモリ装置。
- 前記内部電極は、円柱型または多角柱型である、請求項1に記載の不揮発性メモリ装置。
- 前記可変抵抗体は、前記内部電極それぞれの外周面を囲むように形成される、請求項9に記載の不揮発性メモリ装置。
- 前記可変抵抗体は、前記内部電極とオーバーラップされる前記第1および第2外部電極上の各部位に形成される、請求項9に記載の不揮発性メモリ装置。
- 前記可変抵抗体は、カルコゲニド、遷移金属酸化物、ペロブスカイト構造を有する酸化物、および金属イオンを含有する固体電解質物質から成る群から選択された何れか1つの物質から成る、請求項9に記載の不揮発性メモリ装置。
- 基板の一面に実質的に垂直の方向に延長され形成された内部電極と、
前記基板の一面に実質的に平行な方向に延長されて形成され、前記各内部電極の少なくとも一側に配置され前記各内部電極と交差し、前記内部電極の延長方向に沿って互いにオーバーラップされるように配置された第3および第4外部電極、および
前記各内部電極および第3および第4外部電極と接触する可変抵抗体と、を含む不揮発性メモリ装置。 - 前記第3および第4外部電極は、前記各内部電極を中心に各々前記各内部電極の両側に配置され前記各内部電極と交差して、
前記基板内に形成されたアクティブ領域、前記第3および第4外部電極と実質的に同一の方向に延長されて形成され前記各アクティブ領域当たり2個ずつ接続されたワードライン、および前記内部電極および前記第3および第4外部電極と各々実質的に垂直の方向に延長されて形成され、前記ワードラインの間で前記アクティブ領域と接続されるビットラインと、をさらに含む、請求項13に記載の不揮発性メモリ装置。 - 基板の一面に実質的に平行な方向に延長され、互いに離隔配置されるものの、各々前記基板までの距離が実質的に同一の第1および第2外部電極を形成して、
前記第1および第2外部電極を覆う絶縁層を形成して、
前記各第1外部電極と前記第2外部電極との間の前記絶縁層をエッチングして前記基板の一面に実質的に垂直のコンタクトホールを形成して、
前記第1および第2外部電極と一側が接触する可変抵抗体を形成して、
前記コンタクトホールの残留空間に導電性物質を充填して、前記可変抵抗体の他側と接触して、前記基板の一面に実質的に垂直の方向に延長された内部電極を形成することを含む不揮発性メモリ装置の製造方法。 - 前記可変抵抗体を形成することは、前記コンタクトホールとオーバーラップされる前記第1および第2外部電極を酸化させることを含む、請求項15に記載の不揮発性メモリ装置の製造方法。
- 前記可変抵抗体を形成することは、前記コンタクトホールおよび前記絶縁層上に可変抵抗性物質を蒸着して可変抵抗性物質層を形成し、前記可変抵抗性物質層をエッチングして前記コンタクトホールの側壁にのみ前記可変抵抗性物質を残留させることを含む、請求項15に記載の不揮発性メモリ装置の製造方法。
- 前記内部電極は、導電性物質をCVD、ALD、PVD、および電気メッキから成る群から選択された方式で形成する、請求項15に記載の不揮発性メモリ装置の製造方法。
- 前記第1および第2外部電極を形成して、前記絶縁層を形成することは、前記第1および第2外部電極と前記絶縁層を形成することを各々複数回ずつ行うことである、請求項15に記載の不揮発性メモリ装置の製造方法。
- 基板の一面に実質的に垂直の方向に延長され形成された内部電極、前記基板の一面に実質的に平行な方向に延長されて形成され、前記各内部電極を中心に各々前記各内部電極の両側に配置され前記各内部電極と交差する第1および第2外部電極、および前記各内部電極および第1および第2外部電極と接触する可変抵抗体を含む不揮発性メモリ装置、および
前記不揮発性メモリ装置を動作させるプロセッサと、を含むプロセシングシステム。
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011105060A1 (ja) * | 2010-02-23 | 2011-09-01 | パナソニック株式会社 | 不揮発性メモリ装置の製造方法、不揮発性メモリ素子、および不揮発性メモリ装置 |
JP2011253943A (ja) * | 2010-06-02 | 2011-12-15 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2012256884A (ja) * | 2011-06-07 | 2012-12-27 | Samsung Electronics Co Ltd | 不揮発性メモリセル、不揮発性メモリ装置、及び不揮発性メモリ装置の製造方法 |
JP2013115436A (ja) * | 2011-11-25 | 2013-06-10 | Samsung Electronics Co Ltd | 3次元半導体装置 |
KR20140128877A (ko) * | 2013-04-29 | 2014-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 금속 도핑된 저항성 스위칭 층을 갖는 저항성 랜덤 액세스 메모리 소자를 만드는 방법 |
KR20140128876A (ko) * | 2013-04-29 | 2014-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 저항성 랜덤 액세스 메모리 소자를 만드는 방법 |
JP2016134193A (ja) * | 2015-01-21 | 2016-07-25 | 力旺電子股▲分▼有限公司 | 抵抗変化型ランダムアクセスメモリのメモリセルアレイ |
JP2020113702A (ja) * | 2019-01-16 | 2020-07-27 | ウィンボンド エレクトロニクス コーポレーション | 抵抗変化型ランダムアクセスメモリ |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7772590B2 (en) * | 2007-03-05 | 2010-08-10 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Metal comb structures, methods for their fabrication and failure analysis |
KR20100001260A (ko) * | 2008-06-26 | 2010-01-06 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
US8546861B2 (en) * | 2009-03-05 | 2013-10-01 | Gwangju Institute Of Science And Technology | Resistance change memory device with three-dimensional structure, and device array, electronic product and manufacturing method therefor |
CN102054526B (zh) * | 2009-11-10 | 2012-10-31 | 中芯国际集成电路制造(上海)有限公司 | 一种dram存储器 |
US20130094273A1 (en) * | 2010-04-06 | 2013-04-18 | Wei-Chih Chien | 3d memory and decoding technologies |
KR101811308B1 (ko) | 2010-11-10 | 2017-12-27 | 삼성전자주식회사 | 저항 변화 체를 갖는 비 휘발성 메모리 소자 및 그 제조방법 |
US10297640B2 (en) * | 2010-11-29 | 2019-05-21 | Micron Technology, Inc. | Cross-point memory with self-defined memory elements |
EP2731109B1 (en) | 2010-12-14 | 2016-09-07 | SanDisk Technologies LLC | Architecture for three dimensional non-volatile storage with vertical bit lines |
US9227456B2 (en) * | 2010-12-14 | 2016-01-05 | Sandisk 3D Llc | Memories with cylindrical read/write stacks |
US8933491B2 (en) * | 2011-03-29 | 2015-01-13 | Micron Technology, Inc. | Arrays of memory cells and methods of forming an array of vertically stacked tiers of memory cells |
KR20130019644A (ko) | 2011-08-17 | 2013-02-27 | 삼성전자주식회사 | 반도체 메모리 장치 |
US8891277B2 (en) | 2011-12-07 | 2014-11-18 | Kabushiki Kaisha Toshiba | Memory device |
KR102010335B1 (ko) | 2012-04-30 | 2019-08-13 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그 형성 방법 |
US9171584B2 (en) | 2012-05-15 | 2015-10-27 | Sandisk 3D Llc | Three dimensional non-volatile storage with interleaved vertical select devices above and below vertical bit lines |
CN103474570B (zh) * | 2012-06-06 | 2016-03-30 | 复旦大学 | 集成于集成电路的后端结构的电阻型存储器及其制备方法 |
KR102021808B1 (ko) * | 2012-12-04 | 2019-09-17 | 삼성전자주식회사 | 3차원 구조의 메모리 셀 어레이를 포함하는 불휘발성 메모리 |
US9023699B2 (en) | 2012-12-20 | 2015-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive random access memory (RRAM) structure and method of making the RRAM structure |
US9202694B2 (en) | 2013-03-04 | 2015-12-01 | Sandisk 3D Llc | Vertical bit line non-volatile memory systems and methods of fabrication |
US9165933B2 (en) | 2013-03-07 | 2015-10-20 | Sandisk 3D Llc | Vertical bit line TFT decoder for high voltage operation |
TWI514551B (zh) * | 2013-05-15 | 2015-12-21 | Toshiba Kk | Nonvolatile memory device |
US9362338B2 (en) | 2014-03-03 | 2016-06-07 | Sandisk Technologies Inc. | Vertical thin film transistors in non-volatile storage systems |
US9379246B2 (en) | 2014-03-05 | 2016-06-28 | Sandisk Technologies Inc. | Vertical thin film transistor selection devices and methods of fabrication |
US9627009B2 (en) | 2014-07-25 | 2017-04-18 | Sandisk Technologies Llc | Interleaved grouped word lines for three dimensional non-volatile storage |
US9419058B1 (en) | 2015-02-05 | 2016-08-16 | Sandisk Technologies Llc | Memory device with comb-shaped electrode having a plurality of electrode fingers and method of making thereof |
US9450023B1 (en) | 2015-04-08 | 2016-09-20 | Sandisk Technologies Llc | Vertical bit line non-volatile memory with recessed word lines |
US9831290B2 (en) * | 2016-03-10 | 2017-11-28 | Toshiba Memory Corporation | Semiconductor memory device having local bit line with insulation layer formed therein |
CN106654002B (zh) * | 2016-11-03 | 2018-12-04 | 北京航空航天大学 | 一种低功耗磁性多阻态存储单元 |
TWI691035B (zh) * | 2019-03-12 | 2020-04-11 | 華邦電子股份有限公司 | 電阻式隨機存取記憶體結構 |
CN111769132B (zh) * | 2019-04-02 | 2023-06-02 | 华邦电子股份有限公司 | 电阻式随机存取存储器结构 |
US10950789B2 (en) * | 2019-05-31 | 2021-03-16 | Winbond Electronics Corp. | Resisitive random access memory structure and method for forming the same |
CN110610943A (zh) * | 2019-08-07 | 2019-12-24 | 成都皮兆永存科技有限公司 | 高密度三维结构半导体存储器及制备方法 |
JP2021048224A (ja) * | 2019-09-18 | 2021-03-25 | キオクシア株式会社 | 不揮発性記憶装置 |
CN114823675A (zh) * | 2021-01-29 | 2022-07-29 | 长鑫存储技术有限公司 | 半导体器件 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000100979A (ja) * | 1998-09-18 | 2000-04-07 | Siemens Ag | 電気的にプログラム可能な不揮発性メモリセル装置及びこの不揮発性メモリセル装置を製造する方法 |
JP2002141494A (ja) * | 2000-11-01 | 2002-05-17 | Japan Science & Technology Corp | ポイントコンタクト・アレー |
JP2004031917A (ja) * | 2002-04-02 | 2004-01-29 | Hewlett Packard Co <Hp> | メモリ構造 |
JP2004152893A (ja) * | 2002-10-29 | 2004-05-27 | Sony Corp | 半導体装置及び半導体メモリ |
JP2004186553A (ja) * | 2002-12-05 | 2004-07-02 | Sharp Corp | 不揮発性メモリセル及び不揮発性半導体記憶装置 |
JP2004349504A (ja) * | 2003-05-22 | 2004-12-09 | Hitachi Ltd | 半導体集積回路装置 |
JP2005101535A (ja) * | 2003-08-27 | 2005-04-14 | Nec Corp | 半導体装置 |
JP2005347468A (ja) * | 2004-06-02 | 2005-12-15 | Matsushita Electric Ind Co Ltd | 不揮発性メモリ |
JP2006514781A (ja) * | 2003-04-03 | 2006-05-11 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 3次元メモリアレイ |
WO2006132045A1 (ja) * | 2005-06-10 | 2006-12-14 | Sharp Kabushiki Kaisha | 不揮発性記憶素子とその製造方法 |
JP2007511895A (ja) * | 2003-05-15 | 2007-05-10 | マイクロン・テクノロジー・インコーポレーテッド | 1T‐nメモリセル積層構造体 |
JP2009081251A (ja) * | 2007-09-26 | 2009-04-16 | Panasonic Corp | 抵抗変化素子とその製造方法ならびに抵抗変化型メモリ |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6798359B1 (en) | 2000-10-17 | 2004-09-28 | Swedish Keys Llc | Control unit with variable visual indicator |
JP2002133885A (ja) * | 2000-10-30 | 2002-05-10 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2004022575A (ja) * | 2002-06-12 | 2004-01-22 | Sanyo Electric Co Ltd | 半導体装置 |
JP2004095889A (ja) * | 2002-08-30 | 2004-03-25 | Fasl Japan Ltd | 半導体記憶装置及びその製造方法 |
JP4509467B2 (ja) | 2002-11-08 | 2010-07-21 | シャープ株式会社 | 不揮発可変抵抗素子、及び記憶装置 |
US7291878B2 (en) * | 2003-06-03 | 2007-11-06 | Hitachi Global Storage Technologies Netherlands B.V. | Ultra low-cost solid-state memory |
KR100509569B1 (ko) | 2004-01-05 | 2005-08-23 | 한국과학기술연구원 | 상변화 메모리 및 그 제조방법 |
JP2005244145A (ja) * | 2004-01-28 | 2005-09-08 | Sharp Corp | 半導体記憶装置及びその製造方法 |
KR100668823B1 (ko) | 2004-06-30 | 2007-01-16 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그 제조방법 |
JP2007184419A (ja) * | 2006-01-06 | 2007-07-19 | Sharp Corp | 不揮発性メモリ装置 |
JP2007201244A (ja) * | 2006-01-27 | 2007-08-09 | Renesas Technology Corp | 半導体装置 |
KR101213702B1 (ko) * | 2006-04-21 | 2012-12-18 | 삼성전자주식회사 | 비휘발성 메모리 소자, 그 동작 방법, 및 그 제조 방법 |
US7575984B2 (en) * | 2006-05-31 | 2009-08-18 | Sandisk 3D Llc | Conductive hard mask to protect patterned features during trench etch |
JP5172269B2 (ja) * | 2007-10-17 | 2013-03-27 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR20090055874A (ko) * | 2007-11-29 | 2009-06-03 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
-
2008
- 2008-03-13 KR KR1020080023416A patent/KR101418434B1/ko active IP Right Grant
-
2009
- 2009-01-14 US US12/353,553 patent/US7952163B2/en active Active
- 2009-02-13 TW TW098104742A patent/TWI450390B/zh active
- 2009-03-04 CN CN200910118570XA patent/CN101533848B/zh active Active
- 2009-03-12 JP JP2009059555A patent/JP2009224778A/ja active Pending
-
2011
- 2011-05-05 US US13/101,263 patent/US8314003B2/en active Active
-
2012
- 2012-10-19 US US13/655,584 patent/US8698281B2/en active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000100979A (ja) * | 1998-09-18 | 2000-04-07 | Siemens Ag | 電気的にプログラム可能な不揮発性メモリセル装置及びこの不揮発性メモリセル装置を製造する方法 |
JP2002141494A (ja) * | 2000-11-01 | 2002-05-17 | Japan Science & Technology Corp | ポイントコンタクト・アレー |
JP2004031917A (ja) * | 2002-04-02 | 2004-01-29 | Hewlett Packard Co <Hp> | メモリ構造 |
JP2004152893A (ja) * | 2002-10-29 | 2004-05-27 | Sony Corp | 半導体装置及び半導体メモリ |
JP2004186553A (ja) * | 2002-12-05 | 2004-07-02 | Sharp Corp | 不揮発性メモリセル及び不揮発性半導体記憶装置 |
JP2006514781A (ja) * | 2003-04-03 | 2006-05-11 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 3次元メモリアレイ |
JP2007511895A (ja) * | 2003-05-15 | 2007-05-10 | マイクロン・テクノロジー・インコーポレーテッド | 1T‐nメモリセル積層構造体 |
JP2004349504A (ja) * | 2003-05-22 | 2004-12-09 | Hitachi Ltd | 半導体集積回路装置 |
JP2005101535A (ja) * | 2003-08-27 | 2005-04-14 | Nec Corp | 半導体装置 |
JP2005347468A (ja) * | 2004-06-02 | 2005-12-15 | Matsushita Electric Ind Co Ltd | 不揮発性メモリ |
WO2006132045A1 (ja) * | 2005-06-10 | 2006-12-14 | Sharp Kabushiki Kaisha | 不揮発性記憶素子とその製造方法 |
JP2009081251A (ja) * | 2007-09-26 | 2009-04-16 | Panasonic Corp | 抵抗変化素子とその製造方法ならびに抵抗変化型メモリ |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011105060A1 (ja) * | 2010-02-23 | 2011-09-01 | パナソニック株式会社 | 不揮発性メモリ装置の製造方法、不揮発性メモリ素子、および不揮発性メモリ装置 |
JP5079927B2 (ja) * | 2010-02-23 | 2012-11-21 | パナソニック株式会社 | 不揮発性メモリ装置の製造方法、不揮発性メモリ素子、および不揮発性メモリ装置 |
US8710484B2 (en) | 2010-02-23 | 2014-04-29 | Panasonic Corporation | Method for manufacturing non-volatile memory device, non-volatile memory element, and non-volatile memory device |
JP2011253943A (ja) * | 2010-06-02 | 2011-12-15 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2012256884A (ja) * | 2011-06-07 | 2012-12-27 | Samsung Electronics Co Ltd | 不揮発性メモリセル、不揮発性メモリ装置、及び不揮発性メモリ装置の製造方法 |
JP2013115436A (ja) * | 2011-11-25 | 2013-06-10 | Samsung Electronics Co Ltd | 3次元半導体装置 |
KR20140128877A (ko) * | 2013-04-29 | 2014-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 금속 도핑된 저항성 스위칭 층을 갖는 저항성 랜덤 액세스 메모리 소자를 만드는 방법 |
KR20140128876A (ko) * | 2013-04-29 | 2014-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 저항성 랜덤 액세스 메모리 소자를 만드는 방법 |
JP2014216647A (ja) * | 2013-04-29 | 2014-11-17 | エーエスエムアイピー ホールディング ビー.ブイ. | 金属ドープされた抵抗切り替え層を有する抵抗変化型メモリを製造する方法 |
KR102077778B1 (ko) * | 2013-04-29 | 2020-02-14 | 에이에스엠 아이피 홀딩 비.브이. | 저항성 랜덤 액세스 메모리 소자를 만드는 방법 |
KR102090221B1 (ko) * | 2013-04-29 | 2020-04-16 | 에이에스엠 아이피 홀딩 비.브이. | 금속 도핑된 저항성 스위칭 층을 갖는 저항성 랜덤 액세스 메모리 소자를 만드는 방법 |
JP2016134193A (ja) * | 2015-01-21 | 2016-07-25 | 力旺電子股▲分▼有限公司 | 抵抗変化型ランダムアクセスメモリのメモリセルアレイ |
JP2020113702A (ja) * | 2019-01-16 | 2020-07-27 | ウィンボンド エレクトロニクス コーポレーション | 抵抗変化型ランダムアクセスメモリ |
US11222923B2 (en) | 2019-01-16 | 2022-01-11 | Winbond Electronics Corp. | Resistance variable memory |
Also Published As
Publication number | Publication date |
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KR101418434B1 (ko) | 2014-08-14 |
US8698281B2 (en) | 2014-04-15 |
US7952163B2 (en) | 2011-05-31 |
TWI450390B (zh) | 2014-08-21 |
US20110204315A1 (en) | 2011-08-25 |
KR20090098189A (ko) | 2009-09-17 |
TW201001694A (en) | 2010-01-01 |
CN101533848B (zh) | 2013-04-10 |
US20130043453A1 (en) | 2013-02-21 |
CN101533848A (zh) | 2009-09-16 |
US8314003B2 (en) | 2012-11-20 |
US20090230512A1 (en) | 2009-09-17 |
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