JP2008522446A - 空間温度分布の制御方法及び装置 - Google Patents

空間温度分布の制御方法及び装置 Download PDF

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Publication number
JP2008522446A
JP2008522446A JP2007544574A JP2007544574A JP2008522446A JP 2008522446 A JP2008522446 A JP 2008522446A JP 2007544574 A JP2007544574 A JP 2007544574A JP 2007544574 A JP2007544574 A JP 2007544574A JP 2008522446 A JP2008522446 A JP 2008522446A
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temperature
chuck
flat support
workpiece
base
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JP2008522446A5 (enExample
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ニール ベンジャミン
ロバート ジェイ スティガー
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ラム リサーチ コーポレイション
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007544574A 2004-12-02 2005-12-01 空間温度分布の制御方法及び装置 Pending JP2008522446A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/004,179 US20050211385A1 (en) 2001-04-30 2004-12-02 Method and apparatus for controlling spatial temperature distribution
PCT/US2005/043801 WO2006068805A1 (en) 2004-12-02 2005-12-01 Method and apparatus for controlling spatial temperature distribution

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011176261A Division JP2011244011A (ja) 2004-12-02 2011-08-11 空間温度分布の制御方法及び装置

Publications (2)

Publication Number Publication Date
JP2008522446A true JP2008522446A (ja) 2008-06-26
JP2008522446A5 JP2008522446A5 (enExample) 2012-08-09

Family

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Family Applications (3)

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JP2007544574A Pending JP2008522446A (ja) 2004-12-02 2005-12-01 空間温度分布の制御方法及び装置
JP2011176261A Pending JP2011244011A (ja) 2004-12-02 2011-08-11 空間温度分布の制御方法及び装置
JP2014055288A Pending JP2014146822A (ja) 2004-12-02 2014-03-18 空間温度分布の制御方法及び装置

Family Applications After (2)

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JP2011176261A Pending JP2011244011A (ja) 2004-12-02 2011-08-11 空間温度分布の制御方法及び装置
JP2014055288A Pending JP2014146822A (ja) 2004-12-02 2014-03-18 空間温度分布の制御方法及び装置

Country Status (7)

Country Link
US (3) US20050211385A1 (enExample)
JP (3) JP2008522446A (enExample)
KR (1) KR101109440B1 (enExample)
CN (2) CN102122607B (enExample)
SG (3) SG158101A1 (enExample)
TW (1) TWI481297B (enExample)
WO (1) WO2006068805A1 (enExample)

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JP2008085329A (ja) * 2006-09-25 2008-04-10 Tokyo Electron Ltd 基板処理システムに用いられる耐浸食性絶縁層を有する温度制御された基板ホルダ
JP2010118551A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd 静電チャック及び基板処理装置
JP2011049425A (ja) * 2009-08-28 2011-03-10 Ngk Spark Plug Co Ltd 半導体製造装置用部品
JP2011258953A (ja) * 2010-06-07 2011-12-22 Lam Research Corporation 適応熱導体を有するプラズマ処理チャンバ部品
JP2012508991A (ja) * 2008-11-12 2012-04-12 ラム リサーチ コーポレーション 液体を制御された複数領域基板支持体による改良基板温度制御
WO2012128348A1 (ja) * 2011-03-23 2012-09-27 住友大阪セメント株式会社 静電チャック装置
JP2013149977A (ja) * 2006-09-25 2013-08-01 Tokyo Electron Ltd 基板処理システム用の不均一な断熱層を有する温度制御された基板ホルダ
JP2015162586A (ja) * 2014-02-27 2015-09-07 東京エレクトロン株式会社 静電チャック及び静電チャックの温度制御方法
JP2016189425A (ja) * 2015-03-30 2016-11-04 日本特殊陶業株式会社 セラミックヒータ及びその制御方法、並びに、静電チャック及びその制御方法
JP2016534556A (ja) * 2013-08-06 2016-11-04 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 局部的に加熱されるマルチゾーン式の基板支持体

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US20050211385A1 (en) 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
US8038796B2 (en) 2004-12-30 2011-10-18 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
US7525787B2 (en) * 2005-09-30 2009-04-28 Lam Research Corporation Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
TW200802553A (en) * 2006-05-17 2008-01-01 Eagle Ind Co Ltd Heating apparatus
US7501605B2 (en) * 2006-08-29 2009-03-10 Lam Research Corporation Method of tuning thermal conductivity of electrostatic chuck support assembly
JP5417338B2 (ja) 2007-10-31 2014-02-12 ラム リサーチ コーポレーション 冷却液と構成部品本体との間の熱伝導性を制御するためにガス圧を使用する温度制御モジュール及び温度制御方法
JP5222442B2 (ja) * 2008-02-06 2013-06-26 東京エレクトロン株式会社 基板載置台、基板処理装置及び被処理基板の温度制御方法
US8133819B2 (en) * 2008-02-21 2012-03-13 Applied Materials, Inc. Plasma etching carbonaceous layers with sulfur-based etchants
KR20100037765A (ko) * 2008-10-02 2010-04-12 삼성전자주식회사 플라즈마 발생장치
KR101691044B1 (ko) * 2009-02-04 2016-12-29 맷슨 테크놀로지, 인크. 기판의 표면에 걸친 온도 프로파일을 방사상으로 튜닝하는 정전 척 시스템 및 방법
US8637794B2 (en) * 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
CN102652352B (zh) 2009-12-15 2015-12-02 朗姆研究公司 调节基板温度来改进关键尺寸（cd）的均匀性
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JP4980461B1 (ja) * 2010-12-24 2012-07-18 三井造船株式会社 誘導加熱装置
CN103283013B (zh) * 2010-12-27 2016-08-10 创意科技股份有限公司 工件加热装置及工件处理装置
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US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
CN103123906A (zh) * 2011-11-18 2013-05-29 中芯国际集成电路制造(北京)有限公司 用于处理晶圆的反应装置、静电吸盘和晶圆温度控制方法
CN103137517B (zh) * 2011-11-25 2016-08-03 中芯国际集成电路制造(北京)有限公司 用于处理晶圆的反应装置、静电吸盘和晶圆温度控制方法
JP6017781B2 (ja) * 2011-12-07 2016-11-02 新光電気工業株式会社 基板温調固定装置及びその製造方法
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CN104600000A (zh) * 2013-10-30 2015-05-06 沈阳芯源微电子设备有限公司 一种基板周边吸附烘烤结构
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JP6392612B2 (ja) * 2014-09-30 2018-09-19 日本特殊陶業株式会社 静電チャック
KR20160054153A (ko) * 2014-11-05 2016-05-16 삼성전자주식회사 레이저 어닐링 장비
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US12046477B2 (en) * 2021-01-08 2024-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. By-site-compensated etch back for local planarization/topography adjustment
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