JP2008166677A - 固体撮像装置とその製造方法並びにカメラ - Google Patents

固体撮像装置とその製造方法並びにカメラ Download PDF

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Publication number
JP2008166677A
JP2008166677A JP2007106900A JP2007106900A JP2008166677A JP 2008166677 A JP2008166677 A JP 2008166677A JP 2007106900 A JP2007106900 A JP 2007106900A JP 2007106900 A JP2007106900 A JP 2007106900A JP 2008166677 A JP2008166677 A JP 2008166677A
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Japan
Prior art keywords
solid
imaging device
state imaging
insulating film
recess
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Pending
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JP2007106900A
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English (en)
Japanese (ja)
Inventor
Yoshitetsu Toumiya
祥哲 東宮
Keiji Taya
圭司 田谷
Haruhiko Ajisawa
治彦 味沢
Yuji Inoue
裕士 井上
Tetsudai Iwashita
哲大 岩下
Hideaki Kato
英明 加藤
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2007106900A priority Critical patent/JP2008166677A/ja
Priority to TW096142893A priority patent/TW200834904A/zh
Priority to KR20070123033A priority patent/KR101496842B1/ko
Priority to EP20070023572 priority patent/EP1930950B1/en
Priority to US11/950,680 priority patent/US7973271B2/en
Publication of JP2008166677A publication Critical patent/JP2008166677A/ja
Priority to US12/579,593 priority patent/US8003929B2/en
Priority to US13/163,129 priority patent/US8525098B2/en
Priority to US13/181,626 priority patent/US8981275B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2007106900A 2006-12-08 2007-04-16 固体撮像装置とその製造方法並びにカメラ Pending JP2008166677A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2007106900A JP2008166677A (ja) 2006-12-08 2007-04-16 固体撮像装置とその製造方法並びにカメラ
TW096142893A TW200834904A (en) 2006-12-08 2007-11-13 Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
KR20070123033A KR101496842B1 (ko) 2006-12-08 2007-11-29 고체 촬상 장치와 고체 촬상 장치의 제조 방법 및 카메라
EP20070023572 EP1930950B1 (en) 2006-12-08 2007-12-05 Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
US11/950,680 US7973271B2 (en) 2006-12-08 2007-12-05 Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
US12/579,593 US8003929B2 (en) 2006-12-08 2009-10-15 Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera
US13/163,129 US8525098B2 (en) 2006-12-08 2011-06-17 Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
US13/181,626 US8981275B2 (en) 2006-12-08 2011-07-13 Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006332421 2006-12-08
JP2007106900A JP2008166677A (ja) 2006-12-08 2007-04-16 固体撮像装置とその製造方法並びにカメラ

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JP2009132561A Division JP5639748B2 (ja) 2006-12-08 2009-06-01 固体撮像装置とその製造方法

Publications (1)

Publication Number Publication Date
JP2008166677A true JP2008166677A (ja) 2008-07-17

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JP2007106900A Pending JP2008166677A (ja) 2006-12-08 2007-04-16 固体撮像装置とその製造方法並びにカメラ
JP2009132561A Expired - Fee Related JP5639748B2 (ja) 2006-12-08 2009-06-01 固体撮像装置とその製造方法

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JP2009132561A Expired - Fee Related JP5639748B2 (ja) 2006-12-08 2009-06-01 固体撮像装置とその製造方法

Country Status (4)

Country Link
JP (2) JP2008166677A (zh)
KR (1) KR101496842B1 (zh)
CN (1) CN100587961C (zh)
TW (1) TW200834904A (zh)

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JP2009272597A (ja) * 2008-04-09 2009-11-19 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2010087039A (ja) * 2008-09-29 2010-04-15 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2010141020A (ja) * 2008-12-10 2010-06-24 Sony Corp 固体撮像装置とその製造方法、電子機器並びに半導体装置
JP2010182765A (ja) * 2009-02-04 2010-08-19 Sony Corp 固体撮像装置および電子機器
JP2010199258A (ja) * 2009-02-25 2010-09-09 Sony Corp 固体撮像装置とその製造方法
JP2010225939A (ja) * 2009-03-24 2010-10-07 Toshiba Corp 固体撮像装置及びその製造方法
JP2010239074A (ja) * 2009-03-31 2010-10-21 Sony Corp 固体撮像素子、撮像装置
JP2010239073A (ja) * 2009-03-31 2010-10-21 Sony Corp 固体撮像素子、撮像装置
JP2010287676A (ja) * 2009-06-10 2010-12-24 Sony Corp 固体撮像素子及びその製造方法、撮像装置
US8189083B2 (en) 2008-07-10 2012-05-29 Sony Corporation Solid-state imaging device, method for manufacturing the same and imaging apparatus
CN102637711A (zh) * 2011-02-09 2012-08-15 佳能株式会社 光电转换元件、及使用该元件的光电转换装置和成像系统
CN102637710A (zh) * 2011-02-09 2012-08-15 佳能株式会社 光电转换元件、光电转换装置和图像感测系统
JP2012182429A (ja) * 2011-02-09 2012-09-20 Canon Inc 半導体装置、及び半導体装置の製造方法
JP2012182436A (ja) * 2011-02-09 2012-09-20 Canon Inc 光電変換素子、およびこれを用いた光電変換装置、撮像システム
US8581313B2 (en) 2011-04-22 2013-11-12 Panasonic Corporation Solid-state imaging device
CN103579272A (zh) * 2012-08-07 2014-02-12 佳能株式会社 成像装置、成像系统和成像装置的制造方法
US8679922B2 (en) 2011-02-09 2014-03-25 Canon Kabushiki Kaisha Method of producing semiconductor device and method of producing solid-state image pickup device
JP2014082310A (ja) * 2012-10-16 2014-05-08 Canon Inc 固体撮像装置、固体撮像装置の製造方法、および撮像システム
US8728852B2 (en) 2008-04-09 2014-05-20 Sony Corporation Solid-state imaging device, production method thereof, and electronic device
US8759933B2 (en) 2009-06-04 2014-06-24 Sony Corporation Solid-state image pickup element, method of manufacturing the same, and electronic apparatus using the same
JP2015005578A (ja) * 2013-06-19 2015-01-08 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
WO2015063965A1 (ja) * 2013-10-31 2015-05-07 パナソニックＩｐマネジメント株式会社 固体撮像装置
US9029176B2 (en) 2011-04-20 2015-05-12 Panasonic Intellectual Property Management Co., Ltd. Solid-state imaging device and method for manufacturing the same
US9129877B2 (en) 2011-02-09 2015-09-08 Canon Kabushiki Kaishi Method of manufacturing a semiconductor device including a plurality of photoelectric conversion portions
JP2016004961A (ja) * 2014-06-19 2016-01-12 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP2016171252A (ja) * 2015-03-13 2016-09-23 キヤノン株式会社 固体撮像装置の製造方法
JP2018200955A (ja) * 2017-05-26 2018-12-20 キヤノン株式会社 撮像装置、撮像システム、および、移動体
WO2019069752A1 (ja) * 2017-10-04 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子装置
CN111034400A (zh) * 2019-12-23 2020-04-21 塔里木大学 一种圆盘钩齿耙式起膜装置
US10665734B2 (en) 2016-09-06 2020-05-26 Canon Kabushiki Kaisha Image sensor and image capturing apparatus
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JP2010073902A (ja) * 2008-09-18 2010-04-02 Sony Corp イオン注入方法、固体撮像装置の製造方法、固体撮像装置、並びに電子機器
JP5402083B2 (ja) * 2008-09-29 2014-01-29 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5375141B2 (ja) * 2009-02-05 2013-12-25 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
TWI411102B (zh) * 2009-03-31 2013-10-01 Sony Corp 固態成像元件及成像裝置
JP5564847B2 (ja) * 2009-07-23 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
KR101680899B1 (ko) * 2009-09-02 2016-11-29 소니 주식회사 고체 촬상 장치 및 그 제조 방법
JP5974425B2 (ja) * 2010-05-20 2016-08-23 ソニー株式会社 固体撮像装置及びその製造方法並びに電子機器
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JP5372102B2 (ja) 2011-02-09 2013-12-18 キヤノン株式会社 光電変換装置および撮像システム
JP5709564B2 (ja) * 2011-02-09 2015-04-30 キヤノン株式会社 半導体装置の製造方法
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US8189083B2 (en) 2008-07-10 2012-05-29 Sony Corporation Solid-state imaging device, method for manufacturing the same and imaging apparatus
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US9129877B2 (en) 2011-02-09 2015-09-08 Canon Kabushiki Kaishi Method of manufacturing a semiconductor device including a plurality of photoelectric conversion portions
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