JP2007509769A5 - - Google Patents

Download PDF

Info

Publication number
JP2007509769A5
JP2007509769A5 JP2006533980A JP2006533980A JP2007509769A5 JP 2007509769 A5 JP2007509769 A5 JP 2007509769A5 JP 2006533980 A JP2006533980 A JP 2006533980A JP 2006533980 A JP2006533980 A JP 2006533980A JP 2007509769 A5 JP2007509769 A5 JP 2007509769A5
Authority
JP
Japan
Prior art keywords
gas
atmosphere
adhesive liquid
introducing
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006533980A
Other languages
English (en)
Other versions
JP2007509769A (ja
Filing date
Publication date
Priority claimed from US10/677,639 external-priority patent/US7090716B2/en
Application filed filed Critical
Publication of JP2007509769A publication Critical patent/JP2007509769A/ja
Publication of JP2007509769A5 publication Critical patent/JP2007509769A5/ja
Pending legal-status Critical Current

Links

Claims (30)

  1. 基板に付着した粘性液体層に存在するガスを減少させるための方法であって、この方法は、
    前記粘性液体中のガスの輸送を増加させるために、前記粘性液体に近接した前記ガスの輸送を変更するステップを含むことを特徴とする方法。
  2. 前記輸送は、前記粘性液体中の前記ガスの溶解度と拡散性から原則的に構成される輸送特性のセットから選択されることを特徴とする請求項1に記載の方法。
  3. 前記基板に近接した、前記粘性液体で飽和された大気中に流体を導入し、前記大気を制御するステップをさらに含むことを特徴とする請求項1に記載の方法。
  4. 前記基板に近接した大気の圧力を低下させるステップをさらに含むことを特徴とする請求項1に記載の方法。
  5. 基板に付着した粘性液体内に存在するガスを減少させるための方法であって、
    前記粘着性液体に近接したテンプレートを配置することによって、関連した大気を含む、前記基板に近接した処理領域を決定するステップと、
    前記粘着性液体への前記大気中のガス輸送を増大させるため、前記大気の特性を変更するステップと、
    から成ることを特徴とする方法。
  6. 前記変更するステップは、前記粘着性液体内の前記大気の溶解度を増大させるステップとさらに含むことを特徴とする請求項5に記載の方法。
  7. 前記変更するステップは、前記粘着性液体内の前記大気の拡散性を増大させるステップとさらに含むことを特徴とする請求項5に記載の方法。
  8. 前記変更するステップは、二酸化炭素とヘリウムを含むガスのセットから選択されたガスを前記大気中に導入するステップとさらに含むことを特徴とする請求項5に記載の方法。
  9. 前記大気の圧力を減少させるステップとさらに含むことを特徴とする請求項8に記載の方法。
  10. 基板に付着した粘性液体層に存在するガスを減少させるための方法であって、この方法は、
    前記基板に近接してテンプレートを配置し、前記基板と前記テンプレートの間に関連する大気を有する処理領域を決定するステップと、
    前記粘着性液体内の前記ガスの輸送を増加させるだめに前記大気中に流体を導入するステップと、
    前記処理領域を真空にすることによって前記処理領域の圧力を減少させるステップと、
    から成ることを特徴とする方法。
  11. 前記導入するステップは、前記粘着性液体内の前記大気の溶解度を増大させるステップをさらに含むことを特徴とする請求項10に記載の方法。
  12. 前記導入するステップは、前記粘着性液体内の前記大気の拡散性を増大させるステップをさらに含むことを特徴とする請求項10に記載の方法。
  13. 前記導入するステップは、前記粘着性液体で前記大気を飽和させるために、前記大気に前記流体を導入するステップをさらに含むことを特徴とする請求項10に記載の方法。
  14. 基板に付着した粘性液体層に存在するガスを減少させるための方法であって、この方法は、
    前記粘着性液体内の前記ガスの輸送を増加させるために前記粘着性液体に近接したガスの組成を変更するステップを含むことを特徴とする方法。
  15. 前記変更するステップは、前記ガスを導入し、初期のガスと、前記粘着性液体内での溶解度が前記初期ガスの溶解度より高い追加ガスとを決定するステップをさらに有することを特徴とする請求項14記載の方法。
  16. 前記変更するステップは、前記ガスを導入し、初期のガスと、前記粘着性液体内での拡散性が前記初期ガスの拡散性を上回る追加ガスとを決定するステップをさらに有することを特徴とする請求項14記載の方法。
  17. 前記変更するステップは、前記粘着性液体で飽和した大気中に流体を導入することによって、前記基板に近接した大気を制御することを特徴とする請求項14記載の方法。
  18. 前記基板に近接した大気の圧力を減少させるステップをさらに含むことを特徴とする請求項14記載の方法。
  19. 前記導入するステップは、二酸化炭素とヘリウムを含むガスのセットから選択された前記追加ガスを導入するステップをさらに含むことを特徴とする請求項15記載の方法。
  20. 前記導入するステップは、二酸化炭素とヘリウムを含むガスのセットから選択された前記追加ガスを導入するステップをさらに含むことを特徴とする請求項16記載の方法。
  21. 前記変更するステップは、前記粘着性液体に近接した大気をヘリウムガスで飽和させるステップをさらに有することを特徴とする請求項14記載の方法。
  22. 前記変更するステップは、ヘリウムガスとともに前記粘着性液体に近接した大気を導入するステップをさらに有することを特徴とする請求項1記載の方法。
  23. 前記変更するステップは、前記粘着性液体に近接した大気をヘリウムガスで飽和させるステップをさらに有することを特徴とする請求項10記載の方法。
  24. 前記粘着性液体内にパターンを固化するステップをさらに含むことを特徴とする請求項1記載の方法。
  25. 前記固化されたパターン層を前記粘着性液体から形成するステップを含むことを特徴とする請求項5記載の方法。
  26. 基板に付着した粘性液体内に存在するガスを減少させるための方法であって、この方法は、
    前記粘着性液体に近接した、ヘリウムを含む大気を生成するステップを含むことを特徴とする方法。
  27. 前記生成するステップは、ヘリウムを含む追加ガスを用いて、前記粘着性液体に近接して配されたガスの組成を変更するステップをさらに含むことを特徴とする請求項26記載の方法。
  28. 前記生成するステップは、前記粘着性液体に近接したガスを取り除き、排出されたガスを判定して、ヘリウムを含むガスを粘着性液体に導入するステップをさらに含むことを特徴とする請求項26記載の方法。
  29. 前記生成するステップは、前記粘着性液体に近接した処理領域内のガスを取り除き、排出されたガスを判定し、ヘリウムガスで前記処理領域を飽和させるためにヘリウムを含むガスを前記処理領域に導入するステップをさらに含むことを特徴とする請求項26記載の方法。
  30. 前記粘着性液体から固化されたパターン層を形成するステップをさらに含むことを特徴とする請求項26記載の方法。
JP2006533980A 2003-10-02 2004-09-24 単一位相流体インプリント・リソグラフィ法 Pending JP2007509769A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/677,639 US7090716B2 (en) 2003-10-02 2003-10-02 Single phase fluid imprint lithography method
PCT/US2004/031408 WO2005033797A2 (en) 2003-10-02 2004-09-24 Single phase fluid imprint lithography method

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2010077193A Division JP4536157B1 (ja) 2003-10-02 2010-03-30 単一位相流体インプリント・リソグラフィ法
JP2010077189A Division JP4658227B2 (ja) 2003-10-02 2010-03-30 単一位相流体インプリント・リソグラフィ法
JP2011090191A Division JP5275399B2 (ja) 2003-10-02 2011-04-14 インプリント層に閉じ込められるガスを減少させるための方法

Publications (2)

Publication Number Publication Date
JP2007509769A JP2007509769A (ja) 2007-04-19
JP2007509769A5 true JP2007509769A5 (ja) 2010-05-20

Family

ID=34393769

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2006533980A Pending JP2007509769A (ja) 2003-10-02 2004-09-24 単一位相流体インプリント・リソグラフィ法
JP2010077189A Active JP4658227B2 (ja) 2003-10-02 2010-03-30 単一位相流体インプリント・リソグラフィ法
JP2010077193A Active JP4536157B1 (ja) 2003-10-02 2010-03-30 単一位相流体インプリント・リソグラフィ法
JP2011090191A Active JP5275399B2 (ja) 2003-10-02 2011-04-14 インプリント層に閉じ込められるガスを減少させるための方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2010077189A Active JP4658227B2 (ja) 2003-10-02 2010-03-30 単一位相流体インプリント・リソグラフィ法
JP2010077193A Active JP4536157B1 (ja) 2003-10-02 2010-03-30 単一位相流体インプリント・リソグラフィ法
JP2011090191A Active JP5275399B2 (ja) 2003-10-02 2011-04-14 インプリント層に閉じ込められるガスを減少させるための方法

Country Status (9)

Country Link
US (3) US7090716B2 (ja)
EP (1) EP1667778B1 (ja)
JP (4) JP2007509769A (ja)
KR (3) KR101178432B1 (ja)
CN (1) CN100482307C (ja)
MY (1) MY135469A (ja)
SG (1) SG128681A1 (ja)
TW (1) TWI250560B (ja)
WO (1) WO2005033797A2 (ja)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010030511A1 (en) 2000-04-18 2001-10-18 Shunpei Yamazaki Display device
US20080160129A1 (en) * 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
US7442336B2 (en) * 2003-08-21 2008-10-28 Molecular Imprints, Inc. Capillary imprinting technique
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7641840B2 (en) * 2002-11-13 2010-01-05 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US7641468B2 (en) * 2004-09-01 2010-01-05 Hewlett-Packard Development Company, L.P. Imprint lithography apparatus and method employing an effective pressure
US20070164476A1 (en) * 2004-09-01 2007-07-19 Wei Wu Contact lithography apparatus and method employing substrate deformation
US7205244B2 (en) * 2004-09-21 2007-04-17 Molecular Imprints Patterning substrates employing multi-film layers defining etch-differential interfaces
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US20060081557A1 (en) 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
US8721952B2 (en) * 2004-11-16 2014-05-13 International Business Machines Corporation Pneumatic method and apparatus for nano imprint lithography having a conforming mask
US7377764B2 (en) * 2005-06-13 2008-05-27 Asml Netherlands B.V. Imprint lithography
US7316554B2 (en) * 2005-09-21 2008-01-08 Molecular Imprints, Inc. System to control an atmosphere between a body and a substrate
US7906058B2 (en) 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
WO2007067469A2 (en) * 2005-12-08 2007-06-14 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
CN104317161A (zh) 2005-12-08 2015-01-28 分子制模股份有限公司 用于衬底双面图案形成的方法和系统
US20070138699A1 (en) * 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
JP4536148B2 (ja) * 2006-04-03 2010-09-01 モレキュラー・インプリンツ・インコーポレーテッド リソグラフィ・インプリント・システム
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
DE102006024524A1 (de) * 2006-05-23 2007-12-06 Von Ardenne Anlagentechnik Gmbh Infrarotstrahlung reflektierendes, transparentes Schichtsystem
US20080303187A1 (en) * 2006-12-29 2008-12-11 Molecular Imprints, Inc. Imprint Fluid Control
US20090014917A1 (en) * 2007-07-10 2009-01-15 Molecular Imprints, Inc. Drop Pattern Generation for Imprint Lithography
US8144309B2 (en) * 2007-09-05 2012-03-27 Asml Netherlands B.V. Imprint lithography
US8119052B2 (en) * 2007-11-02 2012-02-21 Molecular Imprints, Inc. Drop pattern generation for imprint lithography
EP2212742B1 (en) * 2007-11-21 2014-07-02 Molecular Imprints, Inc. Porous template and imprinting stack for nano-imprint lithography
US8945444B2 (en) * 2007-12-04 2015-02-03 Canon Nanotechnologies, Inc. High throughput imprint based on contact line motion tracking control
TW200932502A (en) * 2008-01-18 2009-08-01 Univ Nat Taiwan An improved embossing apparatus
US8361371B2 (en) * 2008-02-08 2013-01-29 Molecular Imprints, Inc. Extrusion reduction in imprint lithography
US8187515B2 (en) * 2008-04-01 2012-05-29 Molecular Imprints, Inc. Large area roll-to-roll imprint lithography
US20100072671A1 (en) * 2008-09-25 2010-03-25 Molecular Imprints, Inc. Nano-imprint lithography template fabrication and treatment
US8470188B2 (en) * 2008-10-02 2013-06-25 Molecular Imprints, Inc. Nano-imprint lithography templates
US20100096764A1 (en) * 2008-10-20 2010-04-22 Molecular Imprints, Inc. Gas Environment for Imprint Lithography
US8586126B2 (en) 2008-10-21 2013-11-19 Molecular Imprints, Inc. Robust optimization to generate drop patterns in imprint lithography which are tolerant of variations in drop volume and drop placement
US8512797B2 (en) * 2008-10-21 2013-08-20 Molecular Imprints, Inc. Drop pattern generation with edge weighting
US20100104852A1 (en) * 2008-10-23 2010-04-29 Molecular Imprints, Inc. Fabrication of High-Throughput Nano-Imprint Lithography Templates
US20100112220A1 (en) * 2008-11-03 2010-05-06 Molecular Imprints, Inc. Dispense system set-up and characterization
NL2003600A (en) * 2008-12-04 2010-06-07 Asml Netherlands Bv Imprint lithography apparatus and method.
JP5175771B2 (ja) * 2009-02-27 2013-04-03 株式会社日立ハイテクノロジーズ 微細構造転写装置及び微細構造転写方法
KR20120001768A (ko) * 2009-03-23 2012-01-04 인테벡, 인코포레이티드 패턴드 미디어에서의 아일랜드 대 트랜치 비의 최적화를 위한 공정
JP2011023660A (ja) * 2009-07-17 2011-02-03 Toshiba Corp パターン転写方法
DK2496989T3 (da) * 2009-11-02 2014-01-20 Univ Danmarks Tekniske Fremgangsmåde og indretning til nanotryknings-litografi
US20110140304A1 (en) 2009-12-10 2011-06-16 Molecular Imprints, Inc. Imprint lithography template
WO2011094317A2 (en) * 2010-01-26 2011-08-04 Molecular Imprints, Inc. Micro-conformal templates for nanoimprint lithography
US20110180964A1 (en) * 2010-01-27 2011-07-28 Molecular Imprints. Inc. Systems and methods for substrate formation
WO2011094696A2 (en) * 2010-01-29 2011-08-04 Molecular Imprints, Inc. Ultra-compliant nanoimprint lithography template
EP2534536A2 (en) * 2010-02-09 2012-12-19 Molecular Imprints, Inc. Process gas confinement for nanoimprint lithography
JP5491931B2 (ja) * 2010-03-30 2014-05-14 富士フイルム株式会社 ナノインプリント方法およびモールド製造方法
JP5597031B2 (ja) 2010-05-31 2014-10-01 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
JP5828626B2 (ja) * 2010-10-04 2015-12-09 キヤノン株式会社 インプリント方法
JP5679850B2 (ja) 2011-02-07 2015-03-04 キヤノン株式会社 インプリント装置、および、物品の製造方法
JP5787691B2 (ja) * 2011-09-21 2015-09-30 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
JP5882922B2 (ja) * 2012-01-19 2016-03-09 キヤノン株式会社 インプリント方法、およびインプリント装置
US9278857B2 (en) * 2012-01-31 2016-03-08 Seagate Technology Inc. Method of surface tension control to reduce trapped gas bubbles
JP6304921B2 (ja) * 2012-06-05 2018-04-04 キヤノン株式会社 インプリント方法およびインプリント装置、それを用いた物品の製造方法
US10279538B2 (en) 2012-10-04 2019-05-07 Dai Nippon Printing Co., Ltd. Imprinting method and imprinting apparatus
JP6748399B2 (ja) 2012-11-30 2020-09-02 キヤノン株式会社 インプリント方法およびインプリント用硬化性組成物
JP6230041B2 (ja) * 2013-04-18 2017-11-15 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
KR102056902B1 (ko) 2013-05-29 2019-12-18 삼성전자주식회사 와이어 그리드 편광판 및 이를 구비하는 액정 표시패널 및 액정 표시장치
KR102089661B1 (ko) 2013-08-27 2020-03-17 삼성전자주식회사 와이어 그리드 편광판 및 이를 구비하는 액정 표시패널 및 액정 표시장치
JP5865332B2 (ja) 2013-11-01 2016-02-17 キヤノン株式会社 インプリント装置、物品の製造方法、及びインプリント方法
WO2015068215A1 (ja) * 2013-11-06 2015-05-14 キヤノン株式会社 インプリント用型のパターンの決定方法、インプリント方法及び装置
JP6294679B2 (ja) 2014-01-21 2018-03-14 キヤノン株式会社 インプリント装置及び物品の製造方法
JP6445772B2 (ja) * 2014-03-17 2018-12-26 キヤノン株式会社 インプリント装置及び物品の製造方法
EP2960059B1 (en) 2014-06-25 2018-10-24 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
US11267012B2 (en) * 2014-06-25 2022-03-08 Universal Display Corporation Spatial control of vapor condensation using convection
US11220737B2 (en) 2014-06-25 2022-01-11 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
JP2015005760A (ja) * 2014-07-31 2015-01-08 キヤノン株式会社 インプリント装置、および物品の製造方法
JP6525567B2 (ja) 2014-12-02 2019-06-05 キヤノン株式会社 インプリント装置及び物品の製造方法
JP6628491B2 (ja) * 2015-04-13 2020-01-08 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
JP5989177B2 (ja) * 2015-04-20 2016-09-07 キヤノン株式会社 インプリント装置、および物品の製造方法
US10566534B2 (en) 2015-10-12 2020-02-18 Universal Display Corporation Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP)
KR101968471B1 (ko) 2017-01-30 2019-04-11 배용주 전기를 발생시키고 저장하는 장치
US10895806B2 (en) * 2017-09-29 2021-01-19 Canon Kabushiki Kaisha Imprinting method and apparatus
US10684407B2 (en) * 2017-10-30 2020-06-16 Facebook Technologies, Llc Reactivity enhancement in ion beam etcher
JP7210155B2 (ja) 2018-04-16 2023-01-23 キヤノン株式会社 装置、方法、および物品製造方法
US11137536B2 (en) 2018-07-26 2021-10-05 Facebook Technologies, Llc Bragg-like gratings on high refractive index material
US11226446B2 (en) 2020-05-06 2022-01-18 Facebook Technologies, Llc Hydrogen/nitrogen doping and chemically assisted etching of high refractive index gratings
US11590687B2 (en) 2020-06-30 2023-02-28 Canon Kabushiki Kaisha Systems and methods for reducing pressure while shaping a film

Family Cites Families (200)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783520A (en) * 1970-09-28 1974-01-08 Bell Telephone Labor Inc High accuracy alignment procedure utilizing moire patterns
US3997447A (en) * 1974-06-07 1976-12-14 Composite Sciences, Inc. Fluid processing apparatus
FR2325018A1 (fr) * 1975-06-23 1977-04-15 Ibm Dispositif de mesure d'intervalle pour definir la distance entre deux faces ou plus
IT1068535B (it) 1975-11-03 1985-03-21 Ibm Apparecchio e processo elettrolito grafico
US4201800A (en) * 1978-04-28 1980-05-06 International Business Machines Corp. Hardened photoresist master image mask process
JPS6053675B2 (ja) * 1978-09-20 1985-11-27 富士写真フイルム株式会社 スピンコ−テイング方法
US4279628A (en) * 1979-12-31 1981-07-21 Energy Synergistics, Inc. Apparatus for drying a natural gas stream
DE8007086U1 (de) * 1980-03-14 1982-03-18 Multivac Sepp Haggenmüller KG, 8941 Wolfertschwenden Vorrichtung zum formen von behaeltnissen aus einer folie
DE3377597D1 (en) * 1982-04-12 1988-09-08 Nippon Telegraph & Telephone Method for forming micropattern
US4544572A (en) 1982-09-07 1985-10-01 Minnesota Mining And Manufacturing Company Coated ophthalmic lenses and method for coating the same
US4451507A (en) * 1982-10-29 1984-05-29 Rca Corporation Automatic liquid dispensing apparatus for spinning surface of uniform thickness
FR2538923A1 (fr) * 1982-12-30 1984-07-06 Thomson Csf Procede et dispositif d'alignement optique de motifs dans deux plans rapproches dans un appareil d'exposition comprenant une source de rayonnement divergent
US4507331A (en) * 1983-12-12 1985-03-26 International Business Machines Corporation Dry process for forming positive tone micro patterns
US4512848A (en) * 1984-02-06 1985-04-23 Exxon Research And Engineering Co. Procedure for fabrication of microstructures over large areas using physical replication
US4552833A (en) 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4767584A (en) * 1985-04-03 1988-08-30 Massachusetts Institute Of Technology Process of and apparatus for producing design patterns in materials
DE3514022C1 (de) * 1985-04-18 1986-07-10 Fa. Carl Freudenberg, 6940 Weinheim Vorrichtung zum gegenseitigen Verkleben thermisch erweichbarer Partikel zu einem Kunststoffkoerper
WO1987002935A1 (en) 1985-11-18 1987-05-21 Eastman Kodak Company Process for making optical recording media
EP0228671A1 (en) 1985-12-23 1987-07-15 General Electric Company Method for the production of a coated substrate with controlled surface characteristics
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
US4692205A (en) 1986-01-31 1987-09-08 International Business Machines Corporation Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
GB8610671D0 (en) * 1986-05-01 1986-06-04 Atomic Energy Authority Uk Flow monitoring
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
KR900004269B1 (ko) * 1986-06-11 1990-06-18 가부시기가이샤 도시바 제 1물체와 제 2 물체와의 위치 맞추는 방법 및 장치
EP0255303B1 (en) * 1986-07-25 1989-10-11 Oki Electric Industry Company, Limited Negative resist material, method for its manufacture and method for using it
JPS6376330A (ja) 1986-09-18 1988-04-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
US4707218A (en) 1986-10-28 1987-11-17 International Business Machines Corporation Lithographic image size reduction
US4931351A (en) * 1987-01-12 1990-06-05 Eastman Kodak Company Bilayer lithographic process
US5736424A (en) * 1987-02-27 1998-04-07 Lucent Technologies Inc. Device fabrication involving planarization
US6391798B1 (en) * 1987-02-27 2002-05-21 Agere Systems Guardian Corp. Process for planarization a semiconductor substrate
US4731155A (en) * 1987-04-15 1988-03-15 General Electric Company Process for forming a lithographic mask
US4808511A (en) * 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
KR930000293B1 (ko) 1987-10-26 1993-01-15 마쯔시다덴기산교 가부시기가이샤 미세패턴형성방법
US5028366A (en) * 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
JPH01196749A (ja) 1988-01-30 1989-08-08 Hoya Corp 光情報記録媒体用基板の製造方法
US4891303A (en) * 1988-05-26 1990-01-02 Texas Instruments Incorporated Trilayer microlithographic process using a silicon-based resist as the middle layer
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
JPH0224848A (ja) 1988-07-14 1990-01-26 Canon Inc 光記録媒体用基板の製造方法
JPH0269936A (ja) 1988-07-28 1990-03-08 Siemens Ag 半導体材料上の樹脂構造の形成方法
US4921778A (en) * 1988-07-29 1990-05-01 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
US5108875A (en) * 1988-07-29 1992-04-28 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
EP0355496A3 (en) 1988-08-15 1990-10-10 Sumitomo Heavy Industries Co., Ltd. Position detector employing a sector fresnel zone plate
JP2546350B2 (ja) 1988-09-09 1996-10-23 キヤノン株式会社 位置合わせ装置
JPH0292603A (ja) 1988-09-30 1990-04-03 Hoya Corp 案内溝付き情報記録用基板の製造方法
US4964945A (en) 1988-12-09 1990-10-23 Minnesota Mining And Manufacturing Company Lift off patterning process on a flexible substrate
US5439766A (en) 1988-12-30 1995-08-08 International Business Machines Corporation Composition for photo imaging
JPH02192045A (ja) 1989-01-20 1990-07-27 Fujitsu Ltd 光ディスク基板の製造方法
CA2010169A1 (en) 1989-02-21 1990-08-21 Masakazu Uekita Multi-layer resist
US4999280A (en) * 1989-03-17 1991-03-12 International Business Machines Corporation Spray silylation of photoresist images
US5169494A (en) 1989-03-27 1992-12-08 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
JP3001607B2 (ja) 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト 二層法における寸法安定な構造転写方法
EP0394741B1 (de) 1989-04-24 1997-06-25 Siemens Aktiengesellschaft Verfahren zur Erzeugung ätzresistenter Strukturen
US5053318A (en) 1989-05-18 1991-10-01 Shipley Company Inc. Plasma processing with metal mask integration
CA2011927C (en) * 1989-06-02 1996-12-24 Alan Lee Sidman Microlithographic method for producing thick, vertically-walled photoresist patterns
US4919748A (en) * 1989-06-30 1990-04-24 At&T Bell Laboratories Method for tapered etching
JP2704001B2 (ja) 1989-07-18 1998-01-26 キヤノン株式会社 位置検出装置
DE4031637C2 (de) 1989-10-06 1997-04-10 Toshiba Kawasaki Kk Anordnung zum Messen einer Verschiebung zwischen zwei Objekten
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
US5362606A (en) 1989-10-18 1994-11-08 Massachusetts Institute Of Technology Positive resist pattern formation through focused ion beam exposure and surface barrier silylation
JP3197010B2 (ja) * 1990-03-05 2001-08-13 株式会社東芝 間隔設定方法及び間隔設定装置
US5328810A (en) * 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
JP2586692B2 (ja) * 1990-05-24 1997-03-05 松下電器産業株式会社 パターン形成材料およびパターン形成方法
JP2524436B2 (ja) 1990-09-18 1996-08-14 インターナショナル・ビジネス・マシーンズ・コーポレイション 表面処理方法
JP2977091B2 (ja) * 1990-09-28 1999-11-10 安藤電気株式会社 ヘテロダイン受光を用いた光パルス試験器
US5314772A (en) * 1990-10-09 1994-05-24 Arizona Board Of Regents High resolution, multi-layer resist for microlithography and method therefor
US5240878A (en) 1991-04-26 1993-08-31 International Business Machines Corporation Method for forming patterned films on a substrate
US5212147A (en) * 1991-05-15 1993-05-18 Hewlett-Packard Company Method of forming a patterned in-situ high Tc superconductive film
US5421981A (en) * 1991-06-26 1995-06-06 Ppg Industries, Inc. Electrochemical sensor storage device
EP0524759A1 (en) 1991-07-23 1993-01-27 AT&T Corp. Device fabrication process
US5242711A (en) 1991-08-16 1993-09-07 Rockwell International Corp. Nucleation control of diamond films by microlithographic patterning
JPH0580530A (ja) 1991-09-24 1993-04-02 Hitachi Ltd 薄膜パターン製造方法
US5263073A (en) * 1991-12-20 1993-11-16 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Scanning systems for high resolution E-beam and X-ray lithography
JPH05206095A (ja) * 1992-01-28 1993-08-13 Fujitsu Ltd 超音波処理槽と枚葉式基板処理装置
US5244818A (en) 1992-04-08 1993-09-14 Georgia Tech Research Corporation Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits
US5545367A (en) * 1992-04-15 1996-08-13 Soane Technologies, Inc. Rapid prototype three dimensional stereolithography
FR2690375B1 (fr) * 1992-04-22 1994-07-08 Aerospatiale Dispositif de compactage a chaud pour la fabrication de pieces necessitant des montees en pression et en temperature simultanees.
US5376810A (en) 1992-06-26 1994-12-27 California Institute Of Technology Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response
US5601641A (en) * 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
US5431777A (en) * 1992-09-17 1995-07-11 International Business Machines Corporation Methods and compositions for the selective etching of silicon
TW227628B (ja) * 1992-12-10 1994-08-01 Samsung Electronics Co Ltd
DE69405451T2 (de) * 1993-03-16 1998-03-12 Koninkl Philips Electronics Nv Verfahren und Vorrichtung zur Herstellung eines strukturierten Reliefbildes aus vernetztem Photoresist auf einer flachen Substratoberfläche
US5380474A (en) * 1993-05-20 1995-01-10 Sandia Corporation Methods for patterned deposition on a substrate
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
JP2837063B2 (ja) * 1993-06-04 1998-12-14 シャープ株式会社 レジストパターンの形成方法
US6776094B1 (en) 1993-10-04 2004-08-17 President & Fellows Of Harvard College Kit For Microcontact Printing
US6180239B1 (en) * 1993-10-04 2001-01-30 President And Fellows Of Harvard College Microcontact printing on surfaces and derivative articles
US5512131A (en) * 1993-10-04 1996-04-30 President And Fellows Of Harvard College Formation of microstamped patterns on surfaces and derivative articles
US5900160A (en) * 1993-10-04 1999-05-04 President And Fellows Of Harvard College Methods of etching articles via microcontact printing
US5776748A (en) 1993-10-04 1998-07-07 President And Fellows Of Harvard College Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor
NL9401260A (nl) * 1993-11-12 1995-06-01 Cornelis Johannes Maria Van Ri Membraan voor microfiltratie, ultrafiltratie, gasscheiding en katalyse, werkwijze ter vervaardiging van een dergelijk membraan, mal ter vervaardiging van een dergelijk membraan, alsmede diverse scheidingssystemen omvattende een dergelijk membraan.
JPH07178762A (ja) * 1993-12-24 1995-07-18 Sanyo Silicon Denshi Kk 樹脂成形方法および樹脂成形用金型
KR970009858B1 (ko) 1994-01-12 1997-06-18 엘지반도체 주식회사 다층 레지스트 패턴 형성방법
US5534101A (en) * 1994-03-02 1996-07-09 Telecommunication Research Laboratories Method and apparatus for making optical components by direct dispensing of curable liquid
US5417802A (en) * 1994-03-18 1995-05-23 At&T Corp. Integrated circuit manufacturing
US5453157A (en) 1994-05-16 1995-09-26 Texas Instruments Incorporated Low temperature anisotropic ashing of resist for semiconductor fabrication
US5670415A (en) 1994-05-24 1997-09-23 Depositech, Inc. Method and apparatus for vacuum deposition of highly ionized media in an electromagnetic controlled environment
US5512335A (en) * 1994-06-27 1996-04-30 International Business Machines Corporation Fluid treatment device with vibrational energy means
US5458520A (en) 1994-12-13 1995-10-17 International Business Machines Corporation Method for producing planar field emission structure
US5849209A (en) 1995-03-31 1998-12-15 Johnson & Johnson Vision Products, Inc. Mold material made with additives
US5743998A (en) * 1995-04-19 1998-04-28 Park Scientific Instruments Process for transferring microminiature patterns using spin-on glass resist media
US5820769A (en) 1995-05-24 1998-10-13 Regents Of The University Of Minnesota Method for making magnetic storage having discrete elements with quantized magnetic moments
US5948570A (en) 1995-05-26 1999-09-07 Lucent Technologies Inc. Process for dry lithographic etching
US5997273A (en) * 1995-08-01 1999-12-07 Laquer; Henry Louis Differential pressure HIP forging in a controlled gaseous environment
US5654238A (en) 1995-08-03 1997-08-05 International Business Machines Corporation Method for etching vertical contact holes without substrate damage caused by directional etching
US5849222A (en) 1995-09-29 1998-12-15 Johnson & Johnson Vision Products, Inc. Method for reducing lens hole defects in production of contact lens blanks
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US7758794B2 (en) * 2001-10-29 2010-07-20 Princeton University Method of making an article comprising nanoscale patterns with reduced edge roughness
US20040036201A1 (en) * 2000-07-18 2004-02-26 Princeton University Methods and apparatus of field-induced pressure imprint lithography
US6518189B1 (en) * 1995-11-15 2003-02-11 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US20030080471A1 (en) * 2001-10-29 2003-05-01 Chou Stephen Y. Lithographic method for molding pattern with nanoscale features
US6482742B1 (en) 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography
US6309580B1 (en) * 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US20040137734A1 (en) 1995-11-15 2004-07-15 Princeton University Compositions and processes for nanoimprinting
US5669303A (en) * 1996-03-04 1997-09-23 Motorola Apparatus and method for stamping a surface
US6355198B1 (en) * 1996-03-15 2002-03-12 President And Fellows Of Harvard College Method of forming articles including waveguides via capillary micromolding and microtransfer molding
US6257866B1 (en) * 1996-06-18 2001-07-10 Hy-Tech Forming Systems, Inc. Apparatus for accurately forming plastic sheet
US6039897A (en) * 1996-08-28 2000-03-21 University Of Washington Multiple patterned structures on a single substrate fabricated by elastomeric micro-molding techniques
JP3783170B2 (ja) * 1996-11-19 2006-06-07 同和鉱業株式会社 樹脂成形装置
US5895263A (en) * 1996-12-19 1999-04-20 International Business Machines Corporation Process for manufacture of integrated circuit device
US6143412A (en) 1997-02-10 2000-11-07 President And Fellows Of Harvard College Fabrication of carbon microstructures
US5948470A (en) 1997-04-28 1999-09-07 Harrison; Christopher Method of nanoscale patterning and products made thereby
US5948219A (en) 1997-05-07 1999-09-07 Advanced Micro Devices, Inc. Apparatus for selectively exposing a semiconductor topography to an electric field
US5926690A (en) * 1997-05-28 1999-07-20 Advanced Micro Devices, Inc. Run-to-run control process for controlling critical dimensions
US6033977A (en) * 1997-06-30 2000-03-07 Siemens Aktiengesellschaft Dual damascene structure
AU3818997A (en) 1997-07-25 1999-02-16 Regents Of The University Of Minnesota Single-electron floating-gate mos memory
US5912049A (en) * 1997-08-12 1999-06-15 Micron Technology, Inc. Process liquid dispense method and apparatus
US5991022A (en) 1997-12-09 1999-11-23 N&K Technology, Inc. Reflectance spectrophotometric apparatus with toroidal mirrors
US6150680A (en) 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
DE19819761C2 (de) * 1998-05-04 2000-05-31 Jenoptik Jena Gmbh Einrichtung zur Trennung eines geformten Substrates von einem Prägewerkzeug
JP3780700B2 (ja) * 1998-05-26 2006-05-31 セイコーエプソン株式会社 パターン形成方法、パターン形成装置、パターン形成用版、パターン形成用版の製造方法、カラーフィルタの製造方法、導電膜の製造方法及び液晶パネルの製造方法
US6150231A (en) 1998-06-15 2000-11-21 Siemens Aktiengesellschaft Overlay measurement technique using moire patterns
US6428852B1 (en) 1998-07-02 2002-08-06 Mykrolis Corporation Process for coating a solid surface with a liquid composition
US6099771A (en) * 1998-07-08 2000-08-08 Lear Corporation Vacuum compression method for forming molded thermoplastic floor mat having a "Class A" finish
US5907782A (en) * 1998-08-15 1999-05-25 Acer Semiconductor Manufacturing Inc. Method of forming a multiple fin-pillar capacitor for a high density dram cell
US6096655A (en) 1998-09-02 2000-08-01 International Business Machines, Corporation Method for forming vias and trenches in an insulation layer for a dual-damascene multilevel interconnection structure
US6713238B1 (en) * 1998-10-09 2004-03-30 Stephen Y. Chou Microscale patterning and articles formed thereby
WO2000021689A1 (en) 1998-10-09 2000-04-20 The Trustees Of Princeton University Microscale patterning and articles formed thereby
US6218316B1 (en) * 1998-10-22 2001-04-17 Micron Technology, Inc. Planarization of non-planar surfaces in device fabrication
US6168845B1 (en) * 1999-01-19 2001-01-02 International Business Machines Corporation Patterned magnetic media and method of making the same using selective oxidation
US6565928B2 (en) * 1999-03-08 2003-05-20 Tokyo Electron Limited Film forming method and film forming apparatus
US6334960B1 (en) * 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US6569481B1 (en) * 1999-03-29 2003-05-27 The Quaker Oats Company Method for making a puffed food starch product
US6387783B1 (en) * 1999-04-26 2002-05-14 International Business Machines Corporation Methods of T-gate fabrication using a hybrid resist
JP3291488B2 (ja) * 1999-05-27 2002-06-10 三洋電機株式会社 流体の被除去物除去方法
US6255022B1 (en) * 1999-06-17 2001-07-03 Taiwan Semiconductor Manufacturing Company Dry development process for a bi-layer resist system utilized to reduce microloading
KR100702741B1 (ko) * 1999-06-29 2007-04-03 어플라이드 머티어리얼스, 인코포레이티드 반도체 장치 제조를 위한 집적식 임계치수 제어
US6383928B1 (en) * 1999-09-02 2002-05-07 Texas Instruments Incorporated Post copper CMP clean
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
DE19958966A1 (de) * 1999-12-07 2001-06-13 Infineon Technologies Ag Erzeugung von Resiststrukturen
US6391217B2 (en) * 1999-12-23 2002-05-21 University Of Massachusetts Methods and apparatus for forming submicron patterns on films
JP3847512B2 (ja) * 2000-02-07 2006-11-22 株式会社日立メディコ 磁気共鳴イメージング装置
US6245581B1 (en) * 2000-04-19 2001-06-12 Advanced Micro Devices, Inc. Method and apparatus for control of critical dimension using feedback etch control
JP2001358056A (ja) * 2000-06-15 2001-12-26 Canon Inc 露光装置
EP2264524A3 (en) * 2000-07-16 2011-11-30 The Board of Regents of The University of Texas System High-resolution overlay alignement methods and systems for imprint lithography
CN1262883C (zh) * 2000-07-17 2006-07-05 得克萨斯州大学系统董事会 影印用于平版印刷工艺中的自动化液体分配的方法和系统
US7635262B2 (en) * 2000-07-18 2009-12-22 Princeton University Lithographic apparatus for fluid pressure imprint lithography
US7211214B2 (en) * 2000-07-18 2007-05-01 Princeton University Laser assisted direct imprint lithography
US20050037143A1 (en) * 2000-07-18 2005-02-17 Chou Stephen Y. Imprint lithography with improved monitoring and control and apparatus therefor
US6730256B1 (en) * 2000-08-04 2004-05-04 Massachusetts Institute Of Technology Stereolithographic patterning with interlayer surface modifications
AU2001297642A1 (en) * 2000-10-12 2002-09-04 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro- and nano-imprint lithography
JP3721320B2 (ja) 2000-11-01 2005-11-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US6541360B1 (en) * 2001-04-30 2003-04-01 Advanced Micro Devices, Inc. Bi-layer trim etch process to form integrated circuit gate structures
US6534418B1 (en) * 2001-04-30 2003-03-18 Advanced Micro Devices, Inc. Use of silicon containing imaging layer to define sub-resolution gate structures
US6847433B2 (en) * 2001-06-01 2005-01-25 Agere Systems, Inc. Holder, system, and process for improving overlay in lithography
US6561706B2 (en) * 2001-06-28 2003-05-13 Advanced Micro Devices, Inc. Critical dimension monitoring from latent image
CA2454570C (en) 2001-07-25 2016-12-20 The Trustees Of Princeton University Nanochannel arrays and their preparation and use for high throughput macromolecular analysis
JP3978706B2 (ja) * 2001-09-20 2007-09-19 セイコーエプソン株式会社 微細構造体の製造方法
CN100347608C (zh) 2001-09-25 2007-11-07 米卢塔技术株式会社 利用毛细作用力在基体上形成微型图案的方法
US6716767B2 (en) * 2001-10-31 2004-04-06 Brewer Science, Inc. Contact planarization materials that generate no volatile byproducts or residue during curing
JP3850718B2 (ja) * 2001-11-22 2006-11-29 株式会社東芝 加工方法
US6890688B2 (en) * 2001-12-18 2005-05-10 Freescale Semiconductor, Inc. Lithographic template and method of formation and use
US6737202B2 (en) * 2002-02-22 2004-05-18 Motorola, Inc. Method of fabricating a tiered structure using a multi-layered resist stack and use
US7455955B2 (en) * 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
JP4276087B2 (ja) 2002-03-15 2009-06-10 プリンストン ユニヴァーシティ レーザを利用したダイレクトインプリントリソグラフィ
US6743713B2 (en) * 2002-05-15 2004-06-01 Institute Of Microelectronics Method of forming dual damascene pattern using dual bottom anti-reflective coatings (BARC)
US6849558B2 (en) * 2002-05-22 2005-02-01 The Board Of Trustees Of The Leland Stanford Junior University Replication and transfer of microstructures and nanostructures
AU2003238947A1 (en) 2002-05-24 2003-12-12 Stephen Y. Chou Methods and apparatus of field-induced pressure imprint lithography
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
MY164487A (en) 2002-07-11 2017-12-29 Molecular Imprints Inc Step and repeat imprint lithography processes
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US6908861B2 (en) 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
EP1573395A4 (en) 2002-08-01 2010-09-29 Molecular Imprints Inc SPREADING MEASUREMENT DEVICE FOR THE PRINTING LITHOGRAPHY
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US6916584B2 (en) * 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
JP2004071934A (ja) * 2002-08-08 2004-03-04 Kanegafuchi Chem Ind Co Ltd 微細パターンの製造方法および転写材料
JP3700001B2 (ja) * 2002-09-10 2005-09-28 独立行政法人産業技術総合研究所 インプリント方法及び装置
US7750059B2 (en) * 2002-12-04 2010-07-06 Hewlett-Packard Development Company, L.P. Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure
US7441008B2 (en) 2002-12-18 2008-10-21 International Business Machines Corporation Method for correlating transactions and messages
US6986815B2 (en) * 2003-01-08 2006-01-17 General Electric Company Flow system flush process
US7104268B2 (en) * 2003-01-10 2006-09-12 Akrion Technologies, Inc. Megasonic cleaning system with buffered cavitation method
WO2004086471A1 (en) * 2003-03-27 2004-10-07 Korea Institute Of Machinery & Materials Uv nanoimprint lithography process using elementwise embossed stamp and selectively additive pressurization
WO2004114016A2 (en) 2003-06-09 2004-12-29 Princeton University Office Of Technology Licensing And Intellectual Property Imprint lithography with improved monitoring and control and apparatus therefor
TWI228638B (en) * 2003-06-10 2005-03-01 Ind Tech Res Inst Method for and apparatus for bonding patterned imprint to a substrate by adhering means
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method

Similar Documents

Publication Publication Date Title
JP2007509769A5 (ja)
JP2011514658A5 (ja)
JP2007258426A5 (ja)
JP2006156675A5 (ja)
JP2006522224A5 (ja)
TW200632995A (en) Single wafer dryer and drying methods
MY135469A (en) Single phase fluid imprint lithography method
JP2001158966A5 (ja)
TW200704815A (en) Method for producing silicon oxide film, control program thereof, recording medium and plasma processing apparatus
JP2005529767A5 (ja)
JP2010534935A5 (ja)
TW200630496A (en) Method of producing film and film
PE48999A1 (es) Celda termica que tiene una hoja superior permeable al oxigeno y un metodo para fabricar un material permeable al gas
TW200636847A (en) Substrate processing method, substrate processing apparatus and controlling program
TW200503097A (en) Method and apparatus for removing a target layer from a substrate using reactive gases
WO2010141115A3 (en) Directed material assembly
JP2006520853A5 (ja)
DE602005013809D1 (de) Verfahren und gerät zur kontinuierlichen dekoration von strukturformen mittels sublimation
ATE440732T1 (de) Tintenstrahlaufzeichnungsmedium und verfahren zu seiner herstellung
JP2011115940A5 (ja)
WO2004031856A3 (en) Photomask assembly incorporating a porous frame and method for making it
MY147667A (en) Selective etching of silicon dioxide compositions
JP2006186332A5 (ja)
JP2000208498A5 (ja)
JP2007505219A5 (ja)