JP2007173828A - エッチング耐性ウェーハ加工装置及びその製造方法 - Google Patents

エッチング耐性ウェーハ加工装置及びその製造方法 Download PDF

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Publication number
JP2007173828A
JP2007173828A JP2006343731A JP2006343731A JP2007173828A JP 2007173828 A JP2007173828 A JP 2007173828A JP 2006343731 A JP2006343731 A JP 2006343731A JP 2006343731 A JP2006343731 A JP 2006343731A JP 2007173828 A JP2007173828 A JP 2007173828A
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JP
Japan
Prior art keywords
vapor deposition
base substrate
layer
chemical vapor
wafer processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006343731A
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English (en)
Japanese (ja)
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JP2007173828A5 (https=
Inventor
Fan Wei
ウェイ・ファン
Ajit Sane
アジット・セイン
Jeffrey Lennartz
ジェフリー・レナーツ
Tae Won Kim
テ・ウォン・キム
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General Electric Co
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General Electric Co
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Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2007173828A publication Critical patent/JP2007173828A/ja
Publication of JP2007173828A5 publication Critical patent/JP2007173828A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S269/00—Work holders
    • Y10S269/903—Work holder for electrical circuit assemblages or wiring systems
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2006343731A 2005-12-21 2006-12-21 エッチング耐性ウェーハ加工装置及びその製造方法 Pending JP2007173828A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75267705P 2005-12-21 2005-12-21
US11/322,809 US7446284B2 (en) 2005-12-21 2005-12-30 Etch resistant wafer processing apparatus and method for producing the same

Publications (2)

Publication Number Publication Date
JP2007173828A true JP2007173828A (ja) 2007-07-05
JP2007173828A5 JP2007173828A5 (https=) 2010-01-07

Family

ID=38172487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006343731A Pending JP2007173828A (ja) 2005-12-21 2006-12-21 エッチング耐性ウェーハ加工装置及びその製造方法

Country Status (6)

Country Link
US (1) US7446284B2 (https=)
JP (1) JP2007173828A (https=)
KR (1) KR101329414B1 (https=)
CN (1) CN101026119B (https=)
DE (1) DE102006059736A1 (https=)
TW (1) TW200737400A (https=)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009157228A1 (ja) * 2008-06-26 2009-12-30 キヤノンアネルバ株式会社 スパッタリング装置、スパッタリング方法及び発光素子の製造方法
JP2010170976A (ja) * 2009-01-23 2010-08-05 Samsung Electronics Co Ltd マイクロヒーター及びその製造方法
JP2012502478A (ja) * 2008-09-04 2012-01-26 モメンティブ パフォーマンス マテリアルズ インコーポレイテッド 調整可能な電気抵抗率を有するウェーハ処理装置
WO2013168471A1 (ja) * 2012-05-07 2013-11-14 トーカロ株式会社 静電チャック及び静電チャックの製造方法
JP2014013874A (ja) * 2011-11-25 2014-01-23 Nhk Spring Co Ltd 基板支持装置
KR20140050713A (ko) * 2011-08-08 2014-04-29 어플라이드 머티어리얼스, 인코포레이티드 히터를 구비한 기판 지지체
JP5926870B1 (ja) * 2014-09-16 2016-05-25 日本碍子株式会社 セラミック構造体、基板保持装置用部材及びセラミック構造体の製法
KR101780816B1 (ko) * 2009-12-28 2017-09-21 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 그것에 이용되는 전극
WO2021010062A1 (ja) * 2019-07-16 2021-01-21 日本碍子株式会社 シャフト付きセラミックヒータ
WO2021010063A1 (ja) * 2019-07-16 2021-01-21 日本碍子株式会社 シャフト付きセラミックヒータ
JP2023023820A (ja) * 2021-08-06 2023-02-16 株式会社フェローテックマテリアルテクノロジーズ ウエハ支持体
KR20250087855A (ko) * 2023-12-08 2025-06-17 세메스 주식회사 기판 처리 장치 및 기판 처리 장치의 제조 방법

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080009417A1 (en) * 2006-07-05 2008-01-10 General Electric Company Coating composition, article, and associated method
US20080063798A1 (en) * 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
JP5112808B2 (ja) * 2007-10-15 2013-01-09 筑波精工株式会社 静電型補強装置
US7777160B2 (en) * 2007-12-17 2010-08-17 Momentive Performance Materials Inc. Electrode tuning method and apparatus for a layered heater structure
KR101512632B1 (ko) * 2007-12-19 2015-04-21 퀀텀 글로벌 테크놀로지스, 엘엘씨 프로세스 키트 및 챔버 세정 방법, 그리고 루테늄 회수 방법
WO2010027054A1 (ja) * 2008-09-05 2010-03-11 国立大学法人北陸先端科学技術大学院大学 カンチレバー加熱機構、それを用いたカンチレバーホルダ、及び、カンチレバー加熱方法
US8569877B2 (en) * 2009-03-12 2013-10-29 Utac Thai Limited Metallic solderability preservation coating on metal part of semiconductor package to prevent oxide
FR2960340B1 (fr) * 2010-05-21 2012-06-29 Commissariat Energie Atomique Procede de realisation d'un support de substrat
US20110315081A1 (en) * 2010-06-25 2011-12-29 Law Kam S Susceptor for plasma processing chamber
US10720350B2 (en) * 2010-09-28 2020-07-21 Kla-Tencore Corporation Etch-resistant coating on sensor wafers for in-situ measurement
CN102021655B (zh) * 2010-11-05 2012-07-04 中国电子科技集团公司第二十六研究所 人造石英晶片电清洗方法
US8888086B2 (en) * 2011-05-11 2014-11-18 Sematech, Inc. Apparatus with surface protector to inhibit contamination
TWI439628B (zh) * 2011-12-13 2014-06-01 Briview Corp 片狀元件夾持裝置及其方法
WO2013094665A1 (ja) * 2011-12-22 2013-06-27 信越化学工業株式会社 複合基板
US9673077B2 (en) * 2012-07-03 2017-06-06 Watlow Electric Manufacturing Company Pedestal construction with low coefficient of thermal expansion top
US9224626B2 (en) 2012-07-03 2015-12-29 Watlow Electric Manufacturing Company Composite substrate for layered heaters
CN103681185B (zh) * 2012-08-30 2016-05-04 中微半导体设备(上海)有限公司 一种静电卡盘及等离子体处理装置
DE102012108986A1 (de) * 2012-09-24 2014-03-27 Aixtron Se Substrathalter einer CVD-Vorrichtung
JP6038698B2 (ja) * 2013-03-22 2016-12-07 日本碍子株式会社 セラミックス部材及び半導体製造装置用部材
CN103474568B (zh) * 2013-08-27 2015-12-02 中国计量学院 基于印刷电子技术的薄膜热电偶制备方法
US20230386795A1 (en) * 2013-11-21 2023-11-30 Entegris, Inc. Surface coating for chamber components used in plasma systems
CN106414789A (zh) * 2013-11-21 2017-02-15 恩特格里斯公司 用于在等离子体系统中使用的室组件的表面涂层
US9644269B2 (en) 2014-01-30 2017-05-09 Varian Semiconductor Equipment Associates, Inc Diffusion resistant electrostatic clamp
CN103820763B (zh) * 2014-02-21 2015-09-02 厦门大学 一种在金刚石/铜复合基体表面制备Mo/AlN/BN涂层的方法
US10266943B2 (en) 2014-06-27 2019-04-23 Applied Materials, Inc. Plasma corrosion resistive heater for high temperature processing
WO2015200432A1 (en) * 2014-06-27 2015-12-30 Meacham Kirby G B Variable compression connecting rod
WO2017171872A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Layered substrate for microelectronic devices
CN105803407B (zh) * 2016-06-07 2018-04-10 厦门大学 一种相对介电系数可调氮化铝涂层的制备方法
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
DE102016117682B4 (de) * 2016-09-20 2019-06-19 Infineon Technologies Ag Wafer-chuck, verwendung des wafer-chuck und verfahren zum testen eines halbleiterwafers
JP6921306B2 (ja) * 2018-11-19 2021-08-18 日本特殊陶業株式会社 保持装置および保持装置の製造方法
US11591689B2 (en) * 2019-02-25 2023-02-28 Applied Materials, Inc. Method for fabricating chamber parts
CN113620262B (zh) * 2021-09-10 2022-12-23 渤海大学 稀土掺杂氮化硼纳米片的制备方法及纳米片

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0434953A (ja) * 1990-05-30 1992-02-05 Denki Kagaku Kogyo Kk 静電チャック板

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281745A (ja) * 1985-10-05 1987-04-15 Fujitsu Ltd ウエハ−規模のｌｓｉ半導体装置とその製造方法
EP0267462A3 (en) * 1986-11-12 1990-01-31 Heraeus Amersil, Inc. Mass transferable semiconductor substrate processing and handling full shell carrier (boat)
DE3882859T2 (de) * 1987-09-22 1993-11-18 Nippon Steel Corp Keramikverbundkörper und Verfahren zu seiner Herstellung.
US5280156A (en) * 1990-12-25 1994-01-18 Ngk Insulators, Ltd. Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means
JPH05283411A (ja) * 1992-03-31 1993-10-29 Toshiba Corp 薄膜の形成方法
JPH07153820A (ja) 1993-11-30 1995-06-16 Kyocera Corp 半導体製造用サセプタおよびその製造方法
JPH08227933A (ja) * 1995-02-20 1996-09-03 Shin Etsu Chem Co Ltd 静電吸着機能を有するウエハ加熱装置
JP3165396B2 (ja) 1997-07-19 2001-05-14 イビデン株式会社 ヒーターおよびその製造方法
US6140234A (en) * 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
GB2375231A (en) * 1999-12-09 2002-11-06 Saint Gobain Ceramics Electrostatic chucks with flat film electrode
US6902622B2 (en) * 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0434953A (ja) * 1990-05-30 1992-02-05 Denki Kagaku Kogyo Kk 静電チャック板

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Publication number Priority date Publication date Assignee Title
WO2009157228A1 (ja) * 2008-06-26 2009-12-30 キヤノンアネルバ株式会社 スパッタリング装置、スパッタリング方法及び発光素子の製造方法
JP2012502478A (ja) * 2008-09-04 2012-01-26 モメンティブ パフォーマンス マテリアルズ インコーポレイテッド 調整可能な電気抵抗率を有するウェーハ処理装置
JP2010170976A (ja) * 2009-01-23 2010-08-05 Samsung Electronics Co Ltd マイクロヒーター及びその製造方法
KR101780816B1 (ko) * 2009-12-28 2017-09-21 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 그것에 이용되는 전극
KR102026727B1 (ko) * 2011-08-08 2019-09-30 어플라이드 머티어리얼스, 인코포레이티드 히터를 구비한 기판 지지체
KR20140050713A (ko) * 2011-08-08 2014-04-29 어플라이드 머티어리얼스, 인코포레이티드 히터를 구비한 기판 지지체
JP2014524664A (ja) * 2011-08-08 2014-09-22 アプライド マテリアルズ インコーポレイテッド ヒータを有する基板支持体
KR102056949B1 (ko) * 2011-11-25 2019-12-17 닛폰 하츠죠 가부시키가이샤 기판 지지 장치
JP2014013874A (ja) * 2011-11-25 2014-01-23 Nhk Spring Co Ltd 基板支持装置
US10276410B2 (en) 2011-11-25 2019-04-30 Nhk Spring Co., Ltd. Substrate support device
CN104272450A (zh) * 2012-05-07 2015-01-07 东华隆株式会社 静电夹具和静电夹具的制造方法
CN104272450B (zh) * 2012-05-07 2016-11-23 东华隆株式会社 静电夹具和静电夹具的制造方法
US9799545B2 (en) 2012-05-07 2017-10-24 Tocalo Co., Ltd. Electrostatic chuck and method of manufacturing electrostatic chuck
JP2013235879A (ja) * 2012-05-07 2013-11-21 Tocalo Co Ltd 静電チャック及び静電チャックの製造方法
WO2013168471A1 (ja) * 2012-05-07 2013-11-14 トーカロ株式会社 静電チャック及び静電チャックの製造方法
KR20170036740A (ko) * 2014-09-16 2017-04-03 엔지케이 인슐레이터 엘티디 세라믹 구조체, 기판 유지 장치용 부재 및 세라믹 구조체의 제법
KR101963521B1 (ko) * 2014-09-16 2019-03-28 엔지케이 인슐레이터 엘티디 세라믹 구조체, 기판 유지 장치용 부재 및 세라믹 구조체의 제법
JP5926870B1 (ja) * 2014-09-16 2016-05-25 日本碍子株式会社 セラミック構造体、基板保持装置用部材及びセラミック構造体の製法
US11011404B2 (en) 2014-09-16 2021-05-18 Ngk Insulators, Ltd. Ceramic structure, member for substrate-holding apparatus, and method for producing the ceramic structure
JPWO2021010062A1 (https=) * 2019-07-16 2021-01-21
US12284729B2 (en) 2019-07-16 2025-04-22 Ngk Insulators, Ltd. Ceramic heater with shaft
WO2021010063A1 (ja) * 2019-07-16 2021-01-21 日本碍子株式会社 シャフト付きセラミックヒータ
WO2021010062A1 (ja) * 2019-07-16 2021-01-21 日本碍子株式会社 シャフト付きセラミックヒータ
KR20210144780A (ko) * 2019-07-16 2021-11-30 엔지케이 인슐레이터 엘티디 샤프트를 갖는 세라믹 히터
CN114041323A (zh) * 2019-07-16 2022-02-11 日本碍子株式会社 带轴的陶瓷加热器
JP7174159B2 (ja) 2019-07-16 2022-11-17 日本碍子株式会社 シャフト付きセラミックヒータ
JPWO2021010063A1 (https=) * 2019-07-16 2021-01-21
JP7240499B2 (ja) 2019-07-16 2023-03-15 日本碍子株式会社 シャフト付きセラミックヒータ
KR102603485B1 (ko) 2019-07-16 2023-11-16 엔지케이 인슐레이터 엘티디 샤프트를 갖는 세라믹 히터
JP2023023820A (ja) * 2021-08-06 2023-02-16 株式会社フェローテックマテリアルテクノロジーズ ウエハ支持体
JP7718902B2 (ja) 2021-08-06 2025-08-05 株式会社フェローテックマテリアルテクノロジーズ ウエハ支持体
KR20250087855A (ko) * 2023-12-08 2025-06-17 세메스 주식회사 기판 처리 장치 및 기판 처리 장치의 제조 방법
KR102843312B1 (ko) 2023-12-08 2025-08-05 세메스 주식회사 기판 처리 장치 및 기판 처리 장치의 제조 방법

Also Published As

Publication number Publication date
US7446284B2 (en) 2008-11-04
CN101026119A (zh) 2007-08-29
KR101329414B1 (ko) 2013-11-14
DE102006059736A1 (de) 2007-07-19
US20070138601A1 (en) 2007-06-21
CN101026119B (zh) 2010-12-22
TW200737400A (en) 2007-10-01
KR20070066899A (ko) 2007-06-27

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