TW200737400A - Etch resistant wafer processing apparatus and method for producing the same - Google Patents

Etch resistant wafer processing apparatus and method for producing the same

Info

Publication number
TW200737400A
TW200737400A TW095145670A TW95145670A TW200737400A TW 200737400 A TW200737400 A TW 200737400A TW 095145670 A TW095145670 A TW 095145670A TW 95145670 A TW95145670 A TW 95145670A TW 200737400 A TW200737400 A TW 200737400A
Authority
TW
Taiwan
Prior art keywords
processing apparatus
wafer processing
cte
producing
same
Prior art date
Application number
TW095145670A
Other languages
English (en)
Chinese (zh)
Inventor
Wei Fan
Ajit Sane
Jeffrey Lennartz
Tae-Won Kim
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of TW200737400A publication Critical patent/TW200737400A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S269/00—Work holders
    • Y10S269/903—Work holder for electrical circuit assemblages or wiring systems
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW095145670A 2005-12-21 2006-12-07 Etch resistant wafer processing apparatus and method for producing the same TW200737400A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75267705P 2005-12-21 2005-12-21
US11/322,809 US7446284B2 (en) 2005-12-21 2005-12-30 Etch resistant wafer processing apparatus and method for producing the same

Publications (1)

Publication Number Publication Date
TW200737400A true TW200737400A (en) 2007-10-01

Family

ID=38172487

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095145670A TW200737400A (en) 2005-12-21 2006-12-07 Etch resistant wafer processing apparatus and method for producing the same

Country Status (6)

Country Link
US (1) US7446284B2 (https=)
JP (1) JP2007173828A (https=)
KR (1) KR101329414B1 (https=)
CN (1) CN101026119B (https=)
DE (1) DE102006059736A1 (https=)
TW (1) TW200737400A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI576952B (zh) * 2012-09-24 2017-04-01 愛思強歐洲公司 Ｃｖｄ裝置的基板架
TWI581361B (zh) * 2012-05-07 2017-05-01 Tocalo股份有限公司 Electrostatic chuck and electrostatic chuck manufacturing method
TWI664074B (zh) * 2014-09-16 2019-07-01 Ngk Insulators, Ltd. 陶瓷構造體、基板保持裝置用元件以及陶瓷構造體之製法
US10385454B2 (en) 2014-01-30 2019-08-20 Varian Semiconductor Equipment Associates, Inc. Diffusion resistant electrostatic clamp

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080009417A1 (en) * 2006-07-05 2008-01-10 General Electric Company Coating composition, article, and associated method
US20080063798A1 (en) * 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
JP5112808B2 (ja) * 2007-10-15 2013-01-09 筑波精工株式会社 静電型補強装置
US7777160B2 (en) * 2007-12-17 2010-08-17 Momentive Performance Materials Inc. Electrode tuning method and apparatus for a layered heater structure
KR101512632B1 (ko) * 2007-12-19 2015-04-21 퀀텀 글로벌 테크놀로지스, 엘엘씨 프로세스 키트 및 챔버 세정 방법, 그리고 루테늄 회수 방법
JP2011202190A (ja) * 2008-06-26 2011-10-13 Canon Anelva Corp スパッタリング装置及びスパッタリング方法
US7929269B2 (en) * 2008-09-04 2011-04-19 Momentive Performance Materials Inc. Wafer processing apparatus having a tunable electrical resistivity
WO2010027054A1 (ja) * 2008-09-05 2010-03-11 国立大学法人北陸先端科学技術大学院大学 カンチレバー加熱機構、それを用いたカンチレバーホルダ、及び、カンチレバー加熱方法
KR20100086799A (ko) * 2009-01-23 2010-08-02 삼성전자주식회사 마이크로 히터 및 그 제조 방법
US8569877B2 (en) * 2009-03-12 2013-10-29 Utac Thai Limited Metallic solderability preservation coating on metal part of semiconductor package to prevent oxide
JP5513104B2 (ja) * 2009-12-28 2014-06-04 東京エレクトロン株式会社 プラズマ処理装置
FR2960340B1 (fr) * 2010-05-21 2012-06-29 Commissariat Energie Atomique Procede de realisation d'un support de substrat
US20110315081A1 (en) * 2010-06-25 2011-12-29 Law Kam S Susceptor for plasma processing chamber
US10720350B2 (en) * 2010-09-28 2020-07-21 Kla-Tencore Corporation Etch-resistant coating on sensor wafers for in-situ measurement
CN102021655B (zh) * 2010-11-05 2012-07-04 中国电子科技集团公司第二十六研究所 人造石英晶片电清洗方法
US8888086B2 (en) * 2011-05-11 2014-11-18 Sematech, Inc. Apparatus with surface protector to inhibit contamination
US10242890B2 (en) * 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
US10276410B2 (en) * 2011-11-25 2019-04-30 Nhk Spring Co., Ltd. Substrate support device
TWI439628B (zh) * 2011-12-13 2014-06-01 Briview Corp 片狀元件夾持裝置及其方法
WO2013094665A1 (ja) * 2011-12-22 2013-06-27 信越化学工業株式会社 複合基板
US9673077B2 (en) * 2012-07-03 2017-06-06 Watlow Electric Manufacturing Company Pedestal construction with low coefficient of thermal expansion top
US9224626B2 (en) 2012-07-03 2015-12-29 Watlow Electric Manufacturing Company Composite substrate for layered heaters
CN103681185B (zh) * 2012-08-30 2016-05-04 中微半导体设备(上海)有限公司 一种静电卡盘及等离子体处理装置
JP6038698B2 (ja) * 2013-03-22 2016-12-07 日本碍子株式会社 セラミックス部材及び半導体製造装置用部材
CN103474568B (zh) * 2013-08-27 2015-12-02 中国计量学院 基于印刷电子技术的薄膜热电偶制备方法
US20230386795A1 (en) * 2013-11-21 2023-11-30 Entegris, Inc. Surface coating for chamber components used in plasma systems
CN106414789A (zh) * 2013-11-21 2017-02-15 恩特格里斯公司 用于在等离子体系统中使用的室组件的表面涂层
CN103820763B (zh) * 2014-02-21 2015-09-02 厦门大学 一种在金刚石/铜复合基体表面制备Mo/AlN/BN涂层的方法
US10266943B2 (en) 2014-06-27 2019-04-23 Applied Materials, Inc. Plasma corrosion resistive heater for high temperature processing
WO2015200432A1 (en) * 2014-06-27 2015-12-30 Meacham Kirby G B Variable compression connecting rod
WO2017171872A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Layered substrate for microelectronic devices
CN105803407B (zh) * 2016-06-07 2018-04-10 厦门大学 一种相对介电系数可调氮化铝涂层的制备方法
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
DE102016117682B4 (de) * 2016-09-20 2019-06-19 Infineon Technologies Ag Wafer-chuck, verwendung des wafer-chuck und verfahren zum testen eines halbleiterwafers
JP6921306B2 (ja) * 2018-11-19 2021-08-18 日本特殊陶業株式会社 保持装置および保持装置の製造方法
US11591689B2 (en) * 2019-02-25 2023-02-28 Applied Materials, Inc. Method for fabricating chamber parts
JP7174159B2 (ja) * 2019-07-16 2022-11-17 日本碍子株式会社 シャフト付きセラミックヒータ
CN114175851B (zh) * 2019-07-16 2024-06-25 日本碍子株式会社 带轴的陶瓷加热器
JP7718902B2 (ja) * 2021-08-06 2025-08-05 株式会社フェローテックマテリアルテクノロジーズ ウエハ支持体
CN113620262B (zh) * 2021-09-10 2022-12-23 渤海大学 稀土掺杂氮化硼纳米片的制备方法及纳米片
KR102843312B1 (ko) * 2023-12-08 2025-08-05 세메스 주식회사 기판 처리 장치 및 기판 처리 장치의 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281745A (ja) * 1985-10-05 1987-04-15 Fujitsu Ltd ウエハ−規模のｌｓｉ半導体装置とその製造方法
EP0267462A3 (en) * 1986-11-12 1990-01-31 Heraeus Amersil, Inc. Mass transferable semiconductor substrate processing and handling full shell carrier (boat)
DE3882859T2 (de) * 1987-09-22 1993-11-18 Nippon Steel Corp Keramikverbundkörper und Verfahren zu seiner Herstellung.
JPH0434953A (ja) * 1990-05-30 1992-02-05 Denki Kagaku Kogyo Kk 静電チャック板
US5280156A (en) * 1990-12-25 1994-01-18 Ngk Insulators, Ltd. Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means
JPH05283411A (ja) * 1992-03-31 1993-10-29 Toshiba Corp 薄膜の形成方法
JPH07153820A (ja) 1993-11-30 1995-06-16 Kyocera Corp 半導体製造用サセプタおよびその製造方法
JPH08227933A (ja) * 1995-02-20 1996-09-03 Shin Etsu Chem Co Ltd 静電吸着機能を有するウエハ加熱装置
JP3165396B2 (ja) 1997-07-19 2001-05-14 イビデン株式会社 ヒーターおよびその製造方法
US6140234A (en) * 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
GB2375231A (en) * 1999-12-09 2002-11-06 Saint Gobain Ceramics Electrostatic chucks with flat film electrode
US6902622B2 (en) * 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI581361B (zh) * 2012-05-07 2017-05-01 Tocalo股份有限公司 Electrostatic chuck and electrostatic chuck manufacturing method
US9799545B2 (en) 2012-05-07 2017-10-24 Tocalo Co., Ltd. Electrostatic chuck and method of manufacturing electrostatic chuck
TWI576952B (zh) * 2012-09-24 2017-04-01 愛思強歐洲公司 Ｃｖｄ裝置的基板架
US10385454B2 (en) 2014-01-30 2019-08-20 Varian Semiconductor Equipment Associates, Inc. Diffusion resistant electrostatic clamp
TWI697070B (zh) * 2014-01-30 2020-06-21 美商瓦里安半導體設備公司 製造靜電夾的方法、靜電夾及靜電夾系統
TWI664074B (zh) * 2014-09-16 2019-07-01 Ngk Insulators, Ltd. 陶瓷構造體、基板保持裝置用元件以及陶瓷構造體之製法
US11011404B2 (en) 2014-09-16 2021-05-18 Ngk Insulators, Ltd. Ceramic structure, member for substrate-holding apparatus, and method for producing the ceramic structure

Also Published As

Publication number Publication date
US7446284B2 (en) 2008-11-04
CN101026119A (zh) 2007-08-29
KR101329414B1 (ko) 2013-11-14
DE102006059736A1 (de) 2007-07-19
US20070138601A1 (en) 2007-06-21
CN101026119B (zh) 2010-12-22
KR20070066899A (ko) 2007-06-27
JP2007173828A (ja) 2007-07-05

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