DE102006059736A1 - Ätzbeständige Wafer-Verarbeitungsvorrichtung und Verfahren zum Herstellen derselben - Google Patents

Ätzbeständige Wafer-Verarbeitungsvorrichtung und Verfahren zum Herstellen derselben Download PDF

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Publication number
DE102006059736A1
DE102006059736A1 DE102006059736A DE102006059736A DE102006059736A1 DE 102006059736 A1 DE102006059736 A1 DE 102006059736A1 DE 102006059736 A DE102006059736 A DE 102006059736A DE 102006059736 A DE102006059736 A DE 102006059736A DE 102006059736 A1 DE102006059736 A1 DE 102006059736A1
Authority
DE
Germany
Prior art keywords
layer
base substrate
vapor deposition
chemical vapor
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102006059736A
Other languages
German (de)
English (en)
Inventor
Wei Middleburg Heights Fan
Ajit Medina Sane
Jeffrey Cleveland Lennartz
Tae Won Medina Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Momentive Performance Materials Inc
Original Assignee
Momentive Performance Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Momentive Performance Materials Inc filed Critical Momentive Performance Materials Inc
Publication of DE102006059736A1 publication Critical patent/DE102006059736A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S269/00—Work holders
    • Y10S269/903—Work holder for electrical circuit assemblages or wiring systems
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
DE102006059736A 2005-12-21 2006-12-18 Ätzbeständige Wafer-Verarbeitungsvorrichtung und Verfahren zum Herstellen derselben Withdrawn DE102006059736A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US75267705P 2005-12-21 2005-12-21
US60/752,677 2005-12-21
US11/322,809 2005-12-30
US11/322,809 US7446284B2 (en) 2005-12-21 2005-12-30 Etch resistant wafer processing apparatus and method for producing the same

Publications (1)

Publication Number Publication Date
DE102006059736A1 true DE102006059736A1 (de) 2007-07-19

Family

ID=38172487

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102006059736A Withdrawn DE102006059736A1 (de) 2005-12-21 2006-12-18 Ätzbeständige Wafer-Verarbeitungsvorrichtung und Verfahren zum Herstellen derselben

Country Status (6)

Country Link
US (1) US7446284B2 (https=)
JP (1) JP2007173828A (https=)
KR (1) KR101329414B1 (https=)
CN (1) CN101026119B (https=)
DE (1) DE102006059736A1 (https=)
TW (1) TW200737400A (https=)

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CN103474568B (zh) * 2013-08-27 2015-12-02 中国计量学院 基于印刷电子技术的薄膜热电偶制备方法
KR20230044030A (ko) * 2013-11-21 2023-03-31 엔테그리스, 아이엔씨. 플라즈마 시스템에서 사용되는 챔버 구성요소를 위한 표면 코팅
US20230386795A1 (en) * 2013-11-21 2023-11-30 Entegris, Inc. Surface coating for chamber components used in plasma systems
US9644269B2 (en) * 2014-01-30 2017-05-09 Varian Semiconductor Equipment Associates, Inc Diffusion resistant electrostatic clamp
CN103820763B (zh) * 2014-02-21 2015-09-02 厦门大学 一种在金刚石/铜复合基体表面制备Mo/AlN/BN涂层的方法
KR102437125B1 (ko) * 2014-06-27 2022-08-25 어플라이드 머티어리얼스, 인코포레이티드 고온 프로세싱을 위한 플라즈마 부식 저항성 가열기
US10266943B2 (en) 2014-06-27 2019-04-23 Applied Materials, Inc. Plasma corrosion resistive heater for high temperature processing
WO2016042957A1 (ja) * 2014-09-16 2016-03-24 日本碍子株式会社 セラミック構造体、基板保持装置用部材及びセラミック構造体の製法
US11232948B2 (en) 2016-04-01 2022-01-25 Intel Corporation Layered substrate for microelectronic devices
CN105803407B (zh) * 2016-06-07 2018-04-10 厦门大学 一种相对介电系数可调氮化铝涂层的制备方法
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
DE102016117682B4 (de) * 2016-09-20 2019-06-19 Infineon Technologies Ag Wafer-chuck, verwendung des wafer-chuck und verfahren zum testen eines halbleiterwafers
JP6867550B2 (ja) 2018-11-19 2021-04-28 日本特殊陶業株式会社 保持装置および保持装置の製造方法
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JP7240499B2 (ja) * 2019-07-16 2023-03-15 日本碍子株式会社 シャフト付きセラミックヒータ
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Also Published As

Publication number Publication date
US7446284B2 (en) 2008-11-04
US20070138601A1 (en) 2007-06-21
CN101026119A (zh) 2007-08-29
KR20070066899A (ko) 2007-06-27
JP2007173828A (ja) 2007-07-05
KR101329414B1 (ko) 2013-11-14
TW200737400A (en) 2007-10-01
CN101026119B (zh) 2010-12-22

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R005 Application deemed withdrawn due to failure to request examination

Effective date: 20131219