CN101026119B - 耐蚀刻晶片处理装置和其制造方法 - Google Patents

耐蚀刻晶片处理装置和其制造方法 Download PDF

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Publication number
CN101026119B
CN101026119B CN2006101724504A CN200610172450A CN101026119B CN 101026119 B CN101026119 B CN 101026119B CN 2006101724504 A CN2006101724504 A CN 2006101724504A CN 200610172450 A CN200610172450 A CN 200610172450A CN 101026119 B CN101026119 B CN 101026119B
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CN
China
Prior art keywords
base substrate
coating
plasma
processing device
vapor deposition
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Expired - Fee Related
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CN2006101724504A
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English (en)
Chinese (zh)
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CN101026119A (zh
Inventor
W·范
A·桑
J·伦纳茨
T·W·金
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General Electric Co
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General Electric Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S269/00—Work holders
    • Y10S269/903—Work holder for electrical circuit assemblages or wiring systems
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means
CN2006101724504A 2005-12-21 2006-12-21 耐蚀刻晶片处理装置和其制造方法 Expired - Fee Related CN101026119B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US75267705P 2005-12-21 2005-12-21
US60/752677 2005-12-21
US11/322,809 US7446284B2 (en) 2005-12-21 2005-12-30 Etch resistant wafer processing apparatus and method for producing the same
US11/322809 2005-12-30

Publications (2)

Publication Number Publication Date
CN101026119A CN101026119A (zh) 2007-08-29
CN101026119B true CN101026119B (zh) 2010-12-22

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CN2006101724504A Expired - Fee Related CN101026119B (zh) 2005-12-21 2006-12-21 耐蚀刻晶片处理装置和其制造方法

Country Status (6)

Country Link
US (1) US7446284B2 (https=)
JP (1) JP2007173828A (https=)
KR (1) KR101329414B1 (https=)
CN (1) CN101026119B (https=)
DE (1) DE102006059736A1 (https=)
TW (1) TW200737400A (https=)

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TWI439628B (zh) * 2011-12-13 2014-06-01 Briview Corp 片狀元件夾持裝置及其方法
WO2013094665A1 (ja) * 2011-12-22 2013-06-27 信越化学工業株式会社 複合基板
JP6359236B2 (ja) * 2012-05-07 2018-07-18 トーカロ株式会社 静電チャック
US9673077B2 (en) * 2012-07-03 2017-06-06 Watlow Electric Manufacturing Company Pedestal construction with low coefficient of thermal expansion top
US9224626B2 (en) 2012-07-03 2015-12-29 Watlow Electric Manufacturing Company Composite substrate for layered heaters
CN103681185B (zh) * 2012-08-30 2016-05-04 中微半导体设备(上海)有限公司 一种静电卡盘及等离子体处理装置
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CN103474568B (zh) * 2013-08-27 2015-12-02 中国计量学院 基于印刷电子技术的薄膜热电偶制备方法
US20230386795A1 (en) * 2013-11-21 2023-11-30 Entegris, Inc. Surface coating for chamber components used in plasma systems
CN106414789A (zh) * 2013-11-21 2017-02-15 恩特格里斯公司 用于在等离子体系统中使用的室组件的表面涂层
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CN103820763B (zh) * 2014-02-21 2015-09-02 厦门大学 一种在金刚石/铜复合基体表面制备Mo/AlN/BN涂层的方法
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WO2015200432A1 (en) * 2014-06-27 2015-12-30 Meacham Kirby G B Variable compression connecting rod
KR101963521B1 (ko) * 2014-09-16 2019-03-28 엔지케이 인슐레이터 엘티디 세라믹 구조체, 기판 유지 장치용 부재 및 세라믹 구조체의 제법
WO2017171872A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Layered substrate for microelectronic devices
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JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
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JP6921306B2 (ja) * 2018-11-19 2021-08-18 日本特殊陶業株式会社 保持装置および保持装置の製造方法
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JP7174159B2 (ja) * 2019-07-16 2022-11-17 日本碍子株式会社 シャフト付きセラミックヒータ
CN114175851B (zh) * 2019-07-16 2024-06-25 日本碍子株式会社 带轴的陶瓷加热器
JP7718902B2 (ja) * 2021-08-06 2025-08-05 株式会社フェローテックマテリアルテクノロジーズ ウエハ支持体
CN113620262B (zh) * 2021-09-10 2022-12-23 渤海大学 稀土掺杂氮化硼纳米片的制备方法及纳米片
KR102843312B1 (ko) * 2023-12-08 2025-08-05 세메스 주식회사 기판 처리 장치 및 기판 처리 장치의 제조 방법

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Also Published As

Publication number Publication date
US7446284B2 (en) 2008-11-04
CN101026119A (zh) 2007-08-29
KR101329414B1 (ko) 2013-11-14
DE102006059736A1 (de) 2007-07-19
US20070138601A1 (en) 2007-06-21
TW200737400A (en) 2007-10-01
KR20070066899A (ko) 2007-06-27
JP2007173828A (ja) 2007-07-05

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