MY149325A - Nitride semiconductor component and method for the production thereof - Google Patents

Nitride semiconductor component and method for the production thereof

Info

Publication number
MY149325A
MY149325A MYPI20083249A MYPI20083249A MY149325A MY 149325 A MY149325 A MY 149325A MY PI20083249 A MYPI20083249 A MY PI20083249A MY PI20083249 A MYPI20083249 A MY PI20083249A MY 149325 A MY149325 A MY 149325A
Authority
MY
Malaysia
Prior art keywords
layer
nitride
deposited
nitride semiconductor
silicon surface
Prior art date
Application number
MYPI20083249A
Inventor
Dadgar Armin
Krost Alois
Original Assignee
Azzurro Semiconductors Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE200610008929 external-priority patent/DE102006008929A1/en
Application filed by Azzurro Semiconductors Ag filed Critical Azzurro Semiconductors Ag
Publication of MY149325A publication Critical patent/MY149325A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

THE INVENTION RELATES TO A METHOD FOR PRODUCING A LAYER STRUCTURE (102) OF A NITRIDE SEMICONDUCTOR COMPONENT ON A SILICON SURFACE, SAID METHOD COMPRISING THE FOLLOWING STEPS: A SUBSTRATE (104) HAVING A SILICON SURFACE IS PREPARED; A NITRIDE NUCLEATION LAYER (106) CONTAINING ALUMINIUM IS DEPOSITED ON THE SILICON SURFACE OF THE SUBSTRATE; A NITRIDE BUFFER LAYER CONTAINING ALUMINIUM IS OPTIONALLY DEPOSITED ON THE NITRIDE NUCLEATION LAYER; A MASKING LAYER (108, B) IS DEPOSITED ON THE NITRIDE NUCLEATION LAYER OR ON THE FIRST NITRIDE BUFFER LAYER (A) IF PRESENT; AND A FIRST NITRIDE SEMICONDUCTOR LAYER (110) CONTAINING GALLIUM IS DEPOSITED ON THE MASKING LAYER, THE MASKING LAYER BEING DEPOSITED IN SUCH A WAY THAT SEPARATE CRYSTALLITES FIRST INTERGROW IN THE DEPOSITION STEP OF THE FIRST NITRIDE SEMICONDUCTOR LAYER, ABOVE A COALESCENCE LAYER THICKNESS, AND COVER AN AVERAGE SURFACE OF AT LEAST 0.16 µM2 IN A LAYER PLANE OF THE INTERGROWING NITRIDE SEMICONDUCTOR LAYER, PERPENDICULARLY TO THE DIRECTION OF GROWTH.
MYPI20083249A 2006-02-23 2007-02-22 Nitride semiconductor component and method for the production thereof MY149325A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77645706P 2006-02-23 2006-02-23
DE200610008929 DE102006008929A1 (en) 2006-02-23 2006-02-23 Layer structure production for nitride semiconductor component on silicon surface, involves preparation of substrate having silicon surface on which nitride nucleation layer is deposited with masking layer

Publications (1)

Publication Number Publication Date
MY149325A true MY149325A (en) 2013-08-30

Family

ID=38020245

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20083249A MY149325A (en) 2006-02-23 2007-02-22 Nitride semiconductor component and method for the production thereof

Country Status (10)

Country Link
EP (4) EP1875523B1 (en)
JP (4) JP5393158B2 (en)
KR (4) KR20100017895A (en)
CN (1) CN102064091B (en)
AT (1) ATE483249T1 (en)
DE (1) DE502007005172D1 (en)
HK (1) HK1116922A1 (en)
MY (1) MY149325A (en)
SG (2) SG10201405004WA (en)
WO (1) WO2007096405A1 (en)

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Publication number Publication date
JP2009527913A (en) 2009-07-30
EP2112699B1 (en) 2020-05-06
EP2112699A2 (en) 2009-10-28
JP5393158B2 (en) 2014-01-22
EP1875523A1 (en) 2008-01-09
JP2011233936A (en) 2011-11-17
CN102064091A (en) 2011-05-18
KR20100017895A (en) 2010-02-16
DE502007005172D1 (en) 2010-11-11
SG10201405004WA (en) 2014-10-30
EP2112699A3 (en) 2009-12-30
WO2007096405A1 (en) 2007-08-30
KR20080104014A (en) 2008-11-28
KR20150123293A (en) 2015-11-03
KR101693849B1 (en) 2017-01-06
HK1116922A1 (en) 2009-01-02
ATE483249T1 (en) 2010-10-15
JP2015216378A (en) 2015-12-03
EP3731284A1 (en) 2020-10-28
EP3731283A1 (en) 2020-10-28
CN102064091B (en) 2013-03-20
JP2013219391A (en) 2013-10-24
EP1875523B1 (en) 2010-09-29
KR20150123294A (en) 2015-11-03
SG170031A1 (en) 2011-04-29

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