JP2006520433A - 原子層堆積のサイクル時間改善のための方法と装置 - Google Patents
原子層堆積のサイクル時間改善のための方法と装置 Download PDFInfo
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Abstract
Description
本出願は、本出願の譲受人に授与され、参照により本明細書に組み込まれている、2003年3月14日に出願された「Method and Apparatus for Cycle Time Improvement for ALD」という名称の米国暫定特許出願第60/455,034号に関連し、ここにその優先権利益を主張するものである。
ii)余剰の前駆体をできるだけ迅速に除去する。これは、上流のより高圧レベル供給源を使用した切換作用により、パージ段階中に、パージ・ガス流速をより高い値に分割することによって実施できる。
しかし、反応器チャンバ圧力が名目上一定に制約される場合は、本発明は、反応物曝露時のより低い流速においては絞り弁の開きをより小さく維持し、パージ時のより高い流速においては絞り弁の開きをより大きく維持することによって同じことを可能にする。さらに、第1の前駆体(A)に対するALD半反応は、第2の前駆体(B)に対するそれと大きく異なるため、Aサイクル時の流速とBサイクル時の流速は異なる。前駆体条件が異なることにより曝露流速を変える必要性に対応するために、本発明は、2つ以上の流量レベルよりなる「多値」または「多段」流速を提供する。
NP×NA×r2×(kT/m*)1/2
ここで、NPはパージ・ガスの濃度、NAは前駆体ガス「A」の濃度、m*は、パージおよび前駆体分子の有効質量(mAmP/mA+mP)である。これは、パージ/ガス密度の濃度がより高くなると、衝突率が増加し、前駆体ガスを除去するための順方向運動量が増加することを示唆している。有効質量が1/√m*だけ低下するため、衝突率はより高くなるが、前駆体ガスへの移行運動量は、中性パージ・ガス分子の質量おいて線形であるため、m*の平方根だけ重い質量のパージ・ガスを選択するのがよい。この点において、原子質量40のArの方が、原子質量28のN2より好ましいといえる。したがって、本発明のいくつかの実施形態では、パージ段階中にArを使用し、曝露段階中に独立制御ガスとしてN2を使用して、ガス使用コストを低減させることができる。
Pcham〜uP×[(1/dC)/(1/dC+1/uC)] (1)
上式において、uPは、圧力コントローラによって設定できる上流圧力で、dCおよびuCは、それぞれ下流と上流のコンダクタンスである。コンダクタンスの逆数は、流量インピーダンスに比例するため、任意の一定流量において、チャンバ圧力は、全インピーダンスに対する下流インピーダンスの圧力降下の割合に等しい。
Vs×[Rd/(Rd+Ru)]
ガス流の場合の主な相違は、コンダクタンス要素は、それらの圧力への依存性に関して、直線範囲内で動作できないということである。しかし、コンダクタンスの圧力降下の関数形式にかかわらず、そのような比例関係を利用することが可能である。
Pcham〜UP×[1/dfdC]/(1/dfdC+1/ufuC)] (2)
ここで、dfおよびufは、それぞれ下流と上流コンダクタンスのコンダクタンスの範囲の部分である。uf(fと呼ぶ)に対するdf比が任意の時点で常に同一で、下流と上流の弁またはレストリクタのコンダクタンスの範囲の共通部分fである場合は、f値は式の中で打ち消し合い、圧力は基本的に一定になる(Pcham〜uP×[(1/dC)/(1/dC+f/uC)])。
Claims (55)
- 第1のパージ流と第1のポンピング能力とを用いて、原子層堆積(ALD)プロセスの曝露段階を実行し、前記第1のパージ流より大量の第2のパージ流と、前記第1のポンピング能力より高い第2のポンピング能力とを用いて、前記ALDプロセスのパージ段階を実行することを含む方法。
- 前記ALDプロセスが実行される反応器チャンバの圧力を、前記曝露段階と前記パージ段階中に名目上一定に維持することをさらに含む請求項1に記載の方法。
- 前記反応器チャンバは、絞り弁が、前記曝露段階中より前記パージ段階中の方が広く開くように、前記反応器チャンバの下流の絞り弁の動作によって、前記反応器チャンバの圧力を名目上一定に維持する請求項2に記載の方法。
- 前記第1のパージ流と前記第2のパージ流は異なるガスを含む請求項1に記載の方法。
- 前記第1のパージ流と前記第2のパージ流は異なる流路を通じて供給される請求項1に記載の方法。
- 前記第2のパージ流と前記第2のポンピング能力は前記曝露段階中の材料堆積の終了前に活性化される請求項1に記載の方法。
- 前記第2のパージ流と前記第2のポンピング能力が、ALDプロセスが実行される反応器チャンバ内の既存の乱流を断つように活性化される請求項1に記載の方法。
- それぞれ前記第1のパージ流と第1のポンピング能力と異なる第3のパージ流と第3のポンピング能力を用いて、前記ALDプロセスの第2の曝露段階を実行することをさらに含む請求項1に記載の方法。
- 前記第3のパージ流は、パージ流が存在しないものを含む請求項8に記載の方法。
- 前記曝露段階は、プラズマ利用プロセスを含む請求項1に記載の方法。
- 前記第1のパージ流は、前記第1のポンピング能力が前記第2のポンピング能力に切り換えられるのと実質的に同時点で前記第2のパージ流に切り換えられる請求項1に記載の方法。
- 前記第1のパージ流は、前記曝露半サイクル中の材料堆積の完了の前に前記第2のパージ流に切り換えられる請求項11に記載の方法。
- 前記第1のパージ流は、前記第1のポンピング能力が前記第2のポンピング能力に切り換えられるのと異なる時点で、前記第2のパージ流に切り換えられる請求項1に記載の方法。
- 前記第1のパージ流は、前記第1のポンピング能力が前記第2のポンピング能力に切り換えられる前に、前記第2のパージ流に切り換えられる請求項13に記載の方法。
- 前記第1のパージ流は、前記第1のポンピング能力が前記第2のポンピング能力に切り換えられた後で、前記第2のパージ流に切り換えられる請求項13に記載の方法。
- 前記第1のパージ流は、前記反応器チャンバの下流に位置する第2の流量制限コンダクタンスが前記反応器からの第2のガス流路から切り換えられるのと実質的に同時点で、前記ALDプロセスが実行される反応器チャンバの上流に位置する第1の流量制限コンダクタンスを前記反応器チャンバに至る第1のガス流路から切り換えることによって、前記第2のパージ流に切り換えられる請求項1に記載の方法。
- 原子層堆積(ALD)サイクルの第1の段階を、ALDプロセスが行われる反応器チャンバ内の環状ガス流路の第1のコンダクタンスによって部分的に定められる第1のパージ流を用いて実行し、前記ALDサイクルの第2の段階を、前記第1のパージ流より大量で、前記反応器チャンバ内の前記環状ガス流路の第2のコンダクタンスによって部分的に定められる第2のパージ流を用いて実行することを特徴とする方法。
- 前記第1の段階と前記第2の段階中に、前記反応器チャンバの圧力を名目上一定に維持することをさらに含む請求項17に記載の方法。
- 前記第1のパージ流と前記第2のパージ流は、異なるガスを含む請求項17に記載の方法。
- 前記第1のパージ流と前記第2のパージ流は、異なる流路を通じて供給される請求項17に記載の方法。
- 前記第2のパージ流が、前記第1の段階中の材料堆積の終了前に生じる請求項17に記載の方法。
- 部分的に前記環状ガス流路の第3のコンダクタンスによって定められ、前記第1と第2のパージ流と異なる第3のパージ流を用いて、前記ALDサイクルの第3の段階を実行することをさらに含む請求項17に記載の方法。
- 前記第3のパージ流はパージ流が存在しないものを含む請求項22に記載の方法。
- 前記第1の段階はプラズマ利用プロセスを含む請求項17に記載の方法。
- 前記第1のパージ流は、部分的に、前記反応器チャンバ内の前記環状ガス流路の前記第2のコンダクタンスが、前記反応器チャンバからの第2のガス流路に切り換えられるのと実質的に同時点で、前記反応器チャンバの上流に位置する第1の流量制限コンダクタンスを前記反応器チャンバに至る第1のガス流路から切り換えることによって、前記第2のパージ流に切り換えられる請求項1に記載の方法。
- ALDプロセスが実行される反応器チャンバの上流の第1のガス流路内に位置する第1の流量制限コンダクタンスと、前記反応器チャンバの下流の第2のガス流路内に位置する第2の流量制限コンダクタンスとを通る第1の圧力の第1のパージ流を用いて、原子層堆積(ALD)プロセスの曝露段階を実行し、前記第1のガス流路内に位置する第3のコンダクタンスと、前記第2のガス流路内に位置する第4のコンダクタンスとを通る、前記第1の圧力より高い第2の圧力の第2のパージ流を用いて、前記ALDプロセスのパージ段階を実行することを含み、前記第2のコンダクタンスに対する前記第1のコンダクタンスの割合は、前記第4のコンダクタンスに対する前記第3のコンダクタンスの割合に等しく、前記反応器チャンバは、前記ALDプロセスを通じて名目上一定に維持されることを特徴とする方法。
- 前記第2のパージ流に使用される第2のパージ・ガスは、前記第1のパージ流に使用される第1のパージ・ガスと異なる請求項26に記載の方法。
- 前記曝露段階はプラズマ利用プロセスである請求項26に記載の方法。
- 前記第1のパージ流は、前記第1のガス流路内の前記第1のコンダクタンスが前記第3のコンダクタンスに切り換えられるのと実質的に同時点で、前記第2のパージ流に切り換えられる請求項26に記載の方法。
- 前記第1のパージ流は、前記曝露段階中の材料堆積の完了前に、前記第2のパージ流に切り換えられる請求項26に記載の方法。
- 前記第1のパージ流は、前記第2のガス流路における前記第2のコンダクタンスが、前記第4のコンダクタンスに切り換えられるのと異なる時点で、前記第2のパージ流に切り換えられる請求項26に記載の方法。
- 反応器の上流に連結された第1のパージ流路と、
前記反応器の上流に連結された第2のパージ流路と、
前記反応器の下流に連結され、前記第1のパージ流路が活性状態の場合における第1のポンピング能力と、前記第2のパージ流路が活性状態の場合における、前記第1のポンピング能力より高い第2のポンピング能力との間で切り換えられるように構成されたポンピング機構とを備えた原子層堆積(ALD)システム。 - 前記第1と第2のパージ流路は、1つまたは複数の前駆体注入路を有する共通のガス流マニホールドを共用する請求項32に記載のALDシステム。
- 前記第1と第2のパージ流路の少なくとも一方は、他方から独立して前記反応器に直結される請求項32に記載のALDシステム。
- 前記第1と第2のポンピング能力は、単一の物理的ポンプの2つの動作モードを含む請求項32に記載のALDシステム。
- 前記反応器チャンバの下流の絞り弁をさらに備える請求項32に記載のALDシステム。
- 前記第2のポンピング能力が、少なくとも一部に、前記反応器チャンバの下流であって、前記絞り弁の上流に連結された物理的ポンプによって与えられる請求項36に記載のALDシステム。
- 前記第1と第2のポンピング能力が、前記絞り弁の下流に連結された1つまたは複数のポンプによって与えられる請求項36に記載のALDシステム。
- 前記第1と第2のパージ流路は、それぞれ第1と第2のパージ・ガス圧力で動作するように構成されており、前記第1の圧力が前記第2の圧力より低い請求項32に記載のALDシステム。
- 前記第1と第2のパージ流路が、1つまたは複数の前駆体注入路を有する共通のガス流マニホールドを共用する請求項39に記載のALDシステム。
- 前記第1と第2のパージ流路の少なくとも一方は、他方から独立して前記反応器に直結される請求項39に記載のALDシステム。
- 低流量モードと高流量モードを含む2つ以上の動作モードを有する選択可能な上流流量制限コンダクタンスを通じて反応器の上流に連結されたパージ流路と、
低流量モードと高流量モードを含む2つ以上の動作モードを有する選択可能な下流流量制限コンダクタンスを通じて前記反応器の下流に連結されたポンピング機構とを備え、
前記上流流量制限コンダクタンスと下流流量制限コンダクタンスは、動作モードを互いに時系列で切り換えるように構成されている原子層堆積(ALD)システム。 - 前記上流流量制限コンダクタンスは、前記下流流量制限コンダクタンスが動作モードを切り換える前に、動作モードを切り換えるように構成される請求項42に記載のALD装置。
- 前記下流流量制限コンダクタンスが絞り弁を含む請求項42に記載のALD装置。
- 前記絞り弁は、前記反応器チャンバ内に位置する環状絞り弁を備える請求項44に記載のALD装置。
- 前記パージ流路は、前記反応器チャンバへの1つまたは複数の共通の入力を共用するパージ・ガスと化学前駆体に対する多重ガス流路を備える請求項42に記載のALD装置。
- 前記パージ・ガス流路の少なくとも1つは、前記化学前駆体に対する前記ガス流路から独立している請求項46に記載のALD装置。
- 反応器チャンバからその反応器チャンバの下流に連結されたポンピング・システムに至るガス流路内に環状絞り弁が配置されている反応器チャンバに連結されたガス配送システムを備えた原子層堆積(ALD)システム。
- 前記環状絞り弁は、それぞれ前記反応器チャンバからの異なる流路コンダクタンスを提供するように構成された2つ以上の動作モードを有する請求項48に記載のALDシステム。
- 前記ガス配送システムは、2つ以上の流量レベルのパージ流を供給するように構成されている請求項49に記載のALDシステム。
- 前記環状絞り弁は、名目上一定の反応器チャンバ圧力を維持するように、パージ流量レベルに従って前記環状絞り弁の動作モードを切り換えるように構成された制御システムに連結されている請求項50に記載のALDシステム。
- 前記環状絞り弁は、そのまわりを個々の羽根が第1の位置から第2の位置に回転する軸をそれぞれ有する複数の羽根を含む請求項48に記載のALDシステム。
- 前記環状絞り弁は、絞り構成で配列された複数のブレードを含む請求項48に記載のALDシステム。
- 前記環状絞り弁は、それぞれいくつかの穴を有する複数のブレードを有し、前記ブレードの少なくとも1つは、そのブレードを貫通する穴が、他のブレードの少なくとも1つのブレードの穴と整列して、前記環状絞り弁を通る通路を提供するように、軸のまわりを回転可能である請求項48に記載のALDシステム。
- ALDサイクルのパージ段階中にArガス流量レベルを反応空間に注入するように構成された第1の中性ガス・ラインと、N2ガス流量レベルを前記反応空間の下流に注入するように構成された異なる第2の中性ガス・ラインとを備え、前記ガス流量レベルは、前記反応空間において実質的に一定圧力を確保するように選択されるALD装置。
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- 2004-03-01 WO PCT/US2004/006342 patent/WO2004083485A2/en active Search and Examination
- 2004-03-01 US US10/791,030 patent/US20050016956A1/en not_active Abandoned
- 2004-03-01 EP EP04716180.7A patent/EP1613792B1/en not_active Expired - Lifetime
- 2004-03-01 KR KR1020057017160A patent/KR101416781B1/ko active IP Right Grant
- 2004-03-01 CN CN2004800106570A patent/CN1777696B/zh not_active Expired - Lifetime
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Publication number | Priority date | Publication date | Assignee | Title |
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US10535501B2 (en) | 2013-05-31 | 2020-01-14 | Tokyo Electron Limited | Film forming apparatus, film forming method and non-transitory storage medium |
JP2015078418A (ja) * | 2013-10-18 | 2015-04-23 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
JP2017501569A (ja) * | 2014-01-09 | 2017-01-12 | ユ−ジーン テクノロジー カンパニー.リミテッド | 基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
CN1777696A (zh) | 2006-05-24 |
CN1777696B (zh) | 2011-04-20 |
WO2004083485A3 (en) | 2005-01-27 |
EP1613792B1 (en) | 2014-01-01 |
WO2004083485A2 (en) | 2004-09-30 |
KR20050114234A (ko) | 2005-12-05 |
EP1613792A2 (en) | 2006-01-11 |
US20050016956A1 (en) | 2005-01-27 |
JP4734231B2 (ja) | 2011-07-27 |
KR101416781B1 (ko) | 2014-07-08 |
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