JP2006049858A - 基板処理においてメニスカスを用いるための装置および方法 - Google Patents
基板処理においてメニスカスを用いるための装置および方法 Download PDFInfo
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
【解決手段】該装置は、作動時に基板の表面に近接するプロキシミティヘッドを有する。装置は、また、プロキシミティヘッドの表面に、プロキシミティヘッド内に形成された空洞に通じる開口を有し、空洞は、開口を通じて基板の表面に活性剤を送る。装置は、更に、プロキシミティヘッドの表面に、開口を取り囲む流体メニスカスを基板の表面上に生成するように構成された複数の導管を有する。
【選択図】 図7
Description
Claims (35)
- 基板を処理するための装置であって、
作動時に前記基板の表面に近接するように構成されたプロキシミティヘッドと、
前記プロキシミティヘッドの表面に設けられ、前記プロキシミティヘッド内に形成された空洞に通じる開口であって、前記空洞は、前記開口を通じて前記基板の前記表面に活性剤を送る、開口と、
前記プロキシミティヘッドの前記表面に設けられ、前記開口を取り囲む流体メニスカスを前記基板の前記表面上に生成するように構成された複数の導管と
を備える装置。 - 請求項1に記載の基板を処理するための装置であって、
前記流体メニスカスは、前記基板の前記表面を処理する、装置。 - 請求項1に記載の基板を処理するための装置であって、
前記複数の導管は、複数の供給口および複数の排出口を含む、装置。 - 請求項1に記載の基板を処理するための装置であって、
前記複数の導管は、前記基板の前記表面に流体を供給するための供給口と、前記基板の前記表面から前記流体を除去するための排出口とを含む、装置。 - 請求項4に記載の基板を処理するための装置であって、
前記流体は、リソグラフィ流体、エッチング流体、メッキ流体、洗浄流体、またはすすぎ流体のうちの1つである、装置。 - 請求項4に記載の基板を処理するための装置であって、
前記複数の導管は、更に、前記基板の前記表面に表面張力低下流体を供給するための追加の供給口を含む、装置。 - 請求項1に記載の基板を処理するための装置であって、
前記活性剤は、気体、液体、および蒸気のうちの少なくとも一種である、装置。 - 請求項1に記載の基板を処理するための装置であって、
前記複数の導管は、前記空洞に通じる前記開口を取り囲む、装置。 - 請求項1に記載の基板を処理するための装置であって、
前記空洞は、前記空洞に前記活性気体を入力するように構成された少なくとも1つの供給口を含む、装置。 - 基板を処理するための方法であって、
前記基板の表面の活性領域に活性剤を供給する工程と、
プロキシミティヘッドを用いて、前記基板の前記表面上に、前記活性領域を取り囲む流体メニスカスを生成する工程と
を備える方法。 - 請求項10に記載の基板を処理するための方法であって、更に、
前記活性剤で前記基板の前記表面を処理する工程と、
前記流体メニスカスで前記基板の前記表面を処理する工程と
を備える方法。 - 請求項11に記載の基板を処理するための方法であって、
前記活性剤で前記基板の前記表面を処理する工程は、エッチング、洗浄、すすぎ、メッキ、およびリソグラフィのうちの少なくとも1つの作業を含む、方法。 - 請求項10に記載の基板を処理するための方法であって、
前記流体メニスカスで前記基板の前記表面を処理する工程は、エッチング、洗浄、すすぎ、メッキ、乾燥、またはリソグラフィのうちの少なくとも1つの作業を含む、方法。 - 請求項11に記載の基板を処理するための方法であって、
前記流体メニスカスを生成する工程は、流体供給口を通じて前記基板の前記表面に流体を供給すること、および流体排出口を通じて前記基板の前記表面から前記流体を除去することを含む、方法。 - 請求項14に記載の基板を処理するための方法であって、
前記流体は、リソグラフィ流体、エッチング流体、メッキ流体、洗浄流体、またはすすぎ流体のうちの1つである、方法。 - 請求項13に記載の基板を処理するための方法であって、
前記流体メニスカスを生成する工程は、更に、追加の供給口を通じて前記基板の前記表面に追加の流体を供給することを含み、前記追加の流体は、表面張力低下流体である、方法。 - 請求項14に記載の基板を処理するための方法であって、
前記流体を除去する工程は、前記プロキシミティヘッドより高度の低い容器へと前記流体を吸い出すことを含む、方法。 - 請求項10に記載の基板を処理するための方法であって、
前記活性領域は、前記基板の前記表面上の開口によって定められ、前記開口は、前記プロキシミティヘッド内に形成された空洞に通じる開口である、方法。 - 基板を処理するための方法であって、
前記基板の表面上に第1の流体メニスカスを生成する工程と、
前記基板の前記表面上に、前記第1の流体メニスカスに隣接する第2の流体メニスカスを生成する工程と
を備え、前記第1の流体メニスカスおよび前記第2の流体メニスカスを生成する工程は、前記第1の流体メニスカスから少なくとも前記第1の流体を吸い出すことを含む、方法。 - 請求項19に記載の基板を処理するための装置であって、
前記吸い出しの工程は、管路を通じて、前記基板の前記表面から前記プロキシミティヘッドより高度の低い容器へと少なくとも前記第1の流体を除去することを含む、装置。 - 請求項20に記載の基板を処理するための方法であって、
前記吸い出しの工程は、前記管路を前記少なくとも第1の流体で充填することによって開始される、方法。 - 請求項20に記載の基板を処理するための方法であって、
前記管路は、真空によって充填される、方法。 - 請求項19に記載の基板を処理するための方法であって、
前記第1の流体メニスカスは、自己制御性である、方法。 - 基板を処理するための方法であって、
基板の表面上に流体を供給する工程と、
前記前記基板の前記表面から少なくとも前記流体を吸い出す工程であって、前記除去は、前記基板の前記表面に前記流体が供給されると同時に実施される、工程と
を備え、前記供給および前記除去の工程は、流体メニスカスを形成する、方法。 - 請求項24に記載の基板を処理するための方法であって、
前記吸い出しの工程は、管路を通じて、前記基板の前記表面から前記プロキシミティヘッドより高度の低い容器へと前記流体を除去することを含む、方法。 - 請求項24に記載の基板を処理するための方法であって、
前記流体は、単相の流体である、方法。 - 請求項24に記載の基板を処理するための方法であって、
前記吸い出しは、前記管路を流体で充填することによって開始される、方法。 - 請求項25に記載の基板を処理するための方法であって、
前記管路は、真空によって充填される、方法。 - 請求項19に記載の基板を処理するための方法であって、
前記流体メニスカスは、自己制御性である、方法。 - 基板を処理するためのプロキシミティヘッドであって、
前記プロキシミティヘッド内に設けられ、前記基板の表面に流体を供給するように構成された少なくとも1つの第1の導管と、
前記プロキシミティヘッド内に設けられ、前記少なくとも1つの第1の導管に極めて近接し、前記ウエハの前記表面から前記流体を吸い出すように構成された少なくとも1つの第2の導管と
を備え、前記基板の前記表面への前記流体の供給および前記基板の前記表面からの前記流体の吸い出しは、流体メニスカスを生成する、プロキシミティヘッド。 - 請求項30に記載の基板を処理するためのプロキシミティヘッドであって、更に、
前記プロキシミティヘッド内に設けられ、前記基板に追加の流体を供給するように構成された少なくとも1つの第3の導管を備えるプロキシミティヘッド。 - 請求項30に記載の基板を処理するためのプロキシミティヘッドであって、
前記追加の流体は、表面張力低下流体である、プロキシミティヘッド。 - 請求項30に記載の基板を処理するためのプロキシミティヘッドであって、
前記流体は、単相の流体である、プロキシミティヘッド。 - 請求項30に記載の基板を処理するためのプロキシミティヘッドであって、
前記第2の導管は、吸い出し管に取り付けられる、プロキシミティヘッド。 - 請求項30に記載の基板を処理するためのプロキシミティヘッドであって、
前記吸い出し管は、前記吸い出し管を通る流体の流れを調整するための制限器を含む、プロキシミティヘッド。
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JP7399258B2 (ja) | 2020-03-02 | 2023-12-15 | 東京エレクトロン株式会社 | めっき処理装置 |
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TWI292176B (en) | 2008-01-01 |
MY138656A (en) | 2009-07-31 |
JP5013685B2 (ja) | 2012-08-29 |
ATE488863T1 (de) | 2010-12-15 |
KR20060049725A (ko) | 2006-05-19 |
EP1612847A3 (en) | 2007-11-28 |
JP5331865B2 (ja) | 2013-10-30 |
TW200610006A (en) | 2006-03-16 |
US20050217703A1 (en) | 2005-10-06 |
SG118400A1 (en) | 2006-01-27 |
EP1612847A2 (en) | 2006-01-04 |
JP2012074717A (ja) | 2012-04-12 |
US7093375B2 (en) | 2006-08-22 |
EP1612847B1 (en) | 2010-11-17 |
DE602005024745D1 (de) | 2010-12-30 |
US7363727B2 (en) | 2008-04-29 |
US20060254078A1 (en) | 2006-11-16 |
KR101157847B1 (ko) | 2012-06-22 |
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