JP4758694B2 - 近接型プロキシミティプロセスヘッド - Google Patents
近接型プロキシミティプロセスヘッド Download PDFInfo
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- JP4758694B2 JP4758694B2 JP2005189330A JP2005189330A JP4758694B2 JP 4758694 B2 JP4758694 B2 JP 4758694B2 JP 2005189330 A JP2005189330 A JP 2005189330A JP 2005189330 A JP2005189330 A JP 2005189330A JP 4758694 B2 JP4758694 B2 JP 4758694B2
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- 238000000034 method Methods 0.000 title claims description 69
- 230000008569 process Effects 0.000 title description 36
- 239000012530 fluid Substances 0.000 claims description 485
- 230000005499 meniscus Effects 0.000 claims description 238
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 154
- 239000000758 substrate Substances 0.000 claims description 60
- 238000004140 cleaning Methods 0.000 claims description 41
- 238000001035 drying Methods 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 19
- 238000001459 lithography Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 282
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 24
- 239000007788 liquid Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 19
- 230000002209 hydrophobic effect Effects 0.000 description 19
- 239000008367 deionised water Substances 0.000 description 16
- 229910021641 deionized water Inorganic materials 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000007792 addition Methods 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Description
12…液体/気体移動界面
20…親水性の領域
22…疎水性の領域
26…流体
100…ウエハ処理システム
102a,102b…ローラ
104a,104b…アーム
106a,106b…プロキシミティヘッド
106−1,106−2,106−3,106−4,106−5…マルチメニスカスプロキシミティヘッド
108…ウエハ
108a…上面
108b…下面
116…メニスカス
116a…第1の流体メニスカス
116b…第2の流体メニスカス
116a’,116b’,116c…流体メニスカス
116b−1,116b−2,116c−1,116c−2…流体メニスカス
118…IPA/処理流体界面
302…供給口
304…排出口
304a,304b…排出口
306…供給口
306a,306b…供給口
310…IPA
312…負圧
314…処理流体
402…第1の流体メニスカス領域
404…第2の流体メニスカス領域
452…隆起領域
453…表面
454…設備プレート
456…ボディ
458…処理表面
502,504a,504b,506a,506b…流路
602…疎水性の障壁
Claims (19)
- 基板を処理するための方法であって、
第1の流体メニスカスと、前記第1の流体メニスカスを少なくとも部分的に取り囲む第2の流体メニスカスとを生成し、
前記第1の流体メニスカスおよび前記第2の流体メニスカスを、前記基板の表面上に生成し、
前記第1の流体メニスカスの生成は、第1の流体供給口を通じて前記基板の前記表面に第1の流体を供給し、かつ第1の流体排出口を通じて前記基板の前記表面から前記第1の流体を除去することにより行なわれ、
前記第2の流体メニスカスを生成は、第2の流体供給口を通じて前記基板の前記表面に第2の流体を供給し、前記第1の流体排出口および第2の流体排出口を通じて前記基板の前記表面から前記第2の流体を除去することにより行なわれる
方法。 - 請求項1に記載の基板を処理するための方法であって、更に、
前記第1の流体メニスカスで前記基板の前記表面を処理し、
前記第2の流体メニスカスで前記基板の前記表面を処理する
方法。 - 請求項2に記載の基板を処理するための方法であって、
前記第1の流体メニスカスによる前記基板の前記表面の処理は、エッチング、洗浄、すすぎ、メッキ、およびリソグラフィのうちの1つの作業を含む方法。 - 請求項2に記載の基板を処理するための方法であって、
前記第2の流体メニスカスによる前記基板の前記表面の処理は、エッチング、洗浄、すすぎ、メッキ、乾燥、およびリソグラフィのうちの1つの作業を含む方法。 - 請求項1に記載の基板を処理するための方法であって、
更に、第3の供給口を通じて第3の流体を前記基板表面に供給する方法。 - 請求項1に記載の基板を処理するための方法であって、
前記第1の流体は、リソグラフィ流体、エッチング流体、メッキ流体、洗浄流体、およびすすぎ流体のうちの1つである方法。 - 請求項5に記載の基板を処理するための方法であって、
前記第2の流体は、リソグラフィ流体、エッチング流体、メッキ流体、洗浄流体、乾燥流体、およびすすぎ流体のうちの1つである方法。 - 請求項5に記載の基板を処理するための方法であって、
前記第3の流体は、前記第2の流体の表面張力を低下させる流体である方法。 - 請求項5に記載の基板を処理するための方法であって、
前記第3の流体は、窒素ガスに含有されるイソプロピルアルコール蒸気である、方法。 - 基板を処理するための装置であって、
前記基板の表面上に第1の流体メニスカスを生成すし、前記基板の前記表面上に前記第1の流体メニスカスを少なくとも部分的に取り囲むように第2の流体メニスカスを生成し、前記第1の流体メニスカスに接触する際の前記第2の流体メニスカスの完全性をほぼ維持することができるプロキシミティヘッドを備え、
前記プロキシミティヘッドは、
前記プロキシミティヘッド内に設けられ、前記第1の流体メニスカスを生成することができる第1の導管セットと、
前記プロキシミティヘッド内に設けられ、前記第2の流体メニスカスを生成することができる第2の導管セットと
を含み、前記第2の導管セットは、前記第1の導管セットを少なくとも部分的に取り囲んでおり、
前記第1の導管セットは、
第1の流体を前記基板の前記表面に供給するための少なくとも1つの供給口と、
少なくとも前記第1の流体を前記基板の前記表面から除去するための少なくとも1つの排出口と
を含み、
前記第2の導管セットは、
第2の流体を前記基板の前記表面に供給するための少なくとも1つの供給口と、
前記第2の流体を前記基板の前記表面から除去するための少なくとも1つの排出口と
を含み、前記第1の流体を前記基板の前記表面から除去するための前記少なくとも1つの排出口は、前記第2の流体の少なくとも一部も除去する
装置。 - 請求項10に記載の基板を処理するための装置であって、
前記第2の導管セットは、更に、第3の流体を前記基板の前記表面に供給するための少なくとも1つの供給口を含む装置。 - 請求項10に記載の基板を処理するための装置であって、
前記第1の流体メニスカスは、エッチング、洗浄、すすぎ、メッキ、およびリソグラフィのうちの少なくとも1つの作業を実施することができる装置。 - 請求項10に記載の基板を処理するための装置であって、
前記第2の流体メニスカスは、エッチング、洗浄、すすぎ、メッキ、乾燥、およびリソグラフィのうちの少なくとも1つの作業を実施することができる装置。 - 請求項11に記載の基板を処理するための装置であって、
前記第3の流体は、前記第2の流体の表面張力を低下させる流体である装置。 - 基板を処理するための装置であって、
第1の流体メニスカスを生成し、かつ前記第1の流体メニスカスを少なくとも部分的に取り囲む第2の流体メニスカスを生成することができるプロキシミティヘッドであって、
前記プロキシミティヘッドの処理表面内に設けられ、第1の流体を前記基板の表面に供給するように構成された少なくとも1つの第1の供給口と、
前記プロキシミティヘッドの前記処理表面内に設けられ、前記第1の流体と第2の流体の少なくとも一部とを前記基板の前記表面から除去するように構成された少なくとも1つの第1の排出口と、
前記プロキシミティヘッドの前記処理表面内に設けられ、前記第2の流体を前記基板の前記表面に供給するように構成された少なくとも1つの第2の供給口と、
前記プロキシミティヘッドの前記処理表面内に設けられ、前記第2の流体の少なくとも一部を前記基板の前記表面から除去するように構成された少なくとも1つの第2の排出口と
を含むプロキシミティヘッドを備え、
前記少なくとも1つの第2の供給口および前記少なくとも1つの第2の排出口は、前記少なくとも1つの第1の排出口および前記少なくとも1つの第1の供給口を少なくとも部分的に取り囲む装置。 - 請求項15に記載の基板を処理するための装置であって、
前記プロキシミティヘッドは、更に、前記プロキシミティヘッドの前記処理表面に設けられ、第3の流体を前記基板の前記表面に供給するように構成された少なくとも1つの第3の供給口を含む装置。 - 請求項15に記載の基板を処理するための装置であって、
前記第1の流体メニスカスは、エッチング、洗浄、すすぎ、メッキ、およびリソグラフィのうちの少なくとも1つの作業を実施することができる装置。 - 請求項15に記載の基板を処理するための装置であって、
前記第2の流体メニスカスは、エッチング、洗浄、すすぎ、メッキ、乾燥、およびリソグラフィのうちの少なくとも1つの作業を実施することができる装置。 - 請求項16に記載の基板を処理するための装置であって、
前記第3の流体は、前記第2の流体の表面張力を低下させる流体である装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/883,301 US6954993B1 (en) | 2002-09-30 | 2004-06-30 | Concentric proximity processing head |
US10/883,301 | 2004-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006073998A JP2006073998A (ja) | 2006-03-16 |
JP4758694B2 true JP4758694B2 (ja) | 2011-08-31 |
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Application Number | Title | Priority Date | Filing Date |
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JP2005189330A Expired - Fee Related JP4758694B2 (ja) | 2004-06-30 | 2005-06-29 | 近接型プロキシミティプロセスヘッド |
Country Status (7)
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US (1) | US6954993B1 (ja) |
EP (1) | EP1612846A3 (ja) |
JP (1) | JP4758694B2 (ja) |
KR (1) | KR101160100B1 (ja) |
CN (3) | CN100517586C (ja) |
MY (1) | MY139040A (ja) |
SG (1) | SG118399A1 (ja) |
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2004
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2005
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- 2005-06-30 CN CNB200510079187XA patent/CN100517586C/zh not_active Expired - Fee Related
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CN100517587C (zh) | 2009-07-22 |
CN100517585C (zh) | 2009-07-22 |
KR20060049724A (ko) | 2006-05-19 |
SG118399A1 (en) | 2006-01-27 |
CN1725449A (zh) | 2006-01-25 |
EP1612846A2 (en) | 2006-01-04 |
EP1612846A3 (en) | 2009-12-02 |
MY139040A (en) | 2009-08-28 |
US6954993B1 (en) | 2005-10-18 |
KR101160100B1 (ko) | 2012-06-26 |
JP2006073998A (ja) | 2006-03-16 |
CN1722375A (zh) | 2006-01-18 |
CN100517586C (zh) | 2009-07-22 |
CN1725450A (zh) | 2006-01-25 |
US20050217137A1 (en) | 2005-10-06 |
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