JP2005536060A5 - - Google Patents
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- Publication number
- JP2005536060A5 JP2005536060A5 JP2004529419A JP2004529419A JP2005536060A5 JP 2005536060 A5 JP2005536060 A5 JP 2005536060A5 JP 2004529419 A JP2004529419 A JP 2004529419A JP 2004529419 A JP2004529419 A JP 2004529419A JP 2005536060 A5 JP2005536060 A5 JP 2005536060A5
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- semiconductor structure
- buried layer
- epitaxial layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 91
- 239000000758 substrate Substances 0.000 claims 52
- 239000003989 dielectric material Substances 0.000 claims 22
- 238000002955 isolation Methods 0.000 claims 14
- 239000002019 doping agent Substances 0.000 claims 12
- 238000000926 separation method Methods 0.000 claims 8
- 239000000463 material Substances 0.000 claims 6
- 230000004927 fusion Effects 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/218,678 | 2002-08-14 | ||
| US10/218,678 US6943426B2 (en) | 2002-08-14 | 2002-08-14 | Complementary analog bipolar transistors with trench-constrained isolation diffusion |
| PCT/US2003/025516 WO2004017373A2 (en) | 2002-08-14 | 2003-08-13 | Complementary analog bipolar transistors with trench-constrained isolation diffusion |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011082772A Division JP5470311B2 (ja) | 2002-08-14 | 2011-04-04 | トレンチにより制限された分離拡散領域を備えた相補型アナログバイポーラトランジスタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005536060A JP2005536060A (ja) | 2005-11-24 |
| JP2005536060A5 true JP2005536060A5 (enExample) | 2006-09-28 |
| JP4756860B2 JP4756860B2 (ja) | 2011-08-24 |
Family
ID=31714579
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004529419A Expired - Fee Related JP4756860B2 (ja) | 2002-08-14 | 2003-08-13 | トレンチにより制限された分離拡散領域を備えた相補型アナログバイポーラトランジスタ |
| JP2011082772A Expired - Fee Related JP5470311B2 (ja) | 2002-08-14 | 2011-04-04 | トレンチにより制限された分離拡散領域を備えた相補型アナログバイポーラトランジスタ |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011082772A Expired - Fee Related JP5470311B2 (ja) | 2002-08-14 | 2011-04-04 | トレンチにより制限された分離拡散領域を備えた相補型アナログバイポーラトランジスタ |
Country Status (7)
| Country | Link |
|---|---|
| US (6) | US6943426B2 (enExample) |
| EP (2) | EP1573822B1 (enExample) |
| JP (2) | JP4756860B2 (enExample) |
| KR (3) | KR101052667B1 (enExample) |
| CN (2) | CN100416852C (enExample) |
| AU (1) | AU2003262679A1 (enExample) |
| WO (1) | WO2004017373A2 (enExample) |
Families Citing this family (60)
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| US7834421B2 (en) * | 2002-08-14 | 2010-11-16 | Advanced Analogic Technologies, Inc. | Isolated diode |
| US7667268B2 (en) | 2002-08-14 | 2010-02-23 | Advanced Analogic Technologies, Inc. | Isolated transistor |
| US8513087B2 (en) * | 2002-08-14 | 2013-08-20 | Advanced Analogic Technologies, Incorporated | Processes for forming isolation structures for integrated circuit devices |
| US7812403B2 (en) * | 2002-08-14 | 2010-10-12 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuit devices |
| US7741661B2 (en) * | 2002-08-14 | 2010-06-22 | Advanced Analogic Technologies, Inc. | Isolation and termination structures for semiconductor die |
| US20080197408A1 (en) * | 2002-08-14 | 2008-08-21 | Advanced Analogic Technologies, Inc. | Isolated quasi-vertical DMOS transistor |
| US7902630B2 (en) * | 2002-08-14 | 2011-03-08 | Advanced Analogic Technologies, Inc. | Isolated bipolar transistor |
| US7939420B2 (en) * | 2002-08-14 | 2011-05-10 | Advanced Analogic Technologies, Inc. | Processes for forming isolation structures for integrated circuit devices |
| US8089129B2 (en) * | 2002-08-14 | 2012-01-03 | Advanced Analogic Technologies, Inc. | Isolated CMOS transistors |
| US7956391B2 (en) * | 2002-08-14 | 2011-06-07 | Advanced Analogic Technologies, Inc. | Isolated junction field-effect transistor |
| US6900091B2 (en) * | 2002-08-14 | 2005-05-31 | Advanced Analogic Technologies, Inc. | Isolated complementary MOS devices in epi-less substrate |
| US7825488B2 (en) | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
| US6943426B2 (en) * | 2002-08-14 | 2005-09-13 | Advanced Analogic Technologies, Inc. | Complementary analog bipolar transistors with trench-constrained isolation diffusion |
| US6855985B2 (en) * | 2002-09-29 | 2005-02-15 | Advanced Analogic Technologies, Inc. | Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology |
| US6800904B2 (en) * | 2002-10-17 | 2004-10-05 | Fuji Electric Co., Ltd. | Semiconductor integrated circuit device and method of manufacturing the same |
| US7052966B2 (en) * | 2003-04-09 | 2006-05-30 | Newport Fab, Llc | Deep N wells in triple well structures and method for fabricating same |
| JP4511885B2 (ja) | 2004-07-09 | 2010-07-28 | Dowaエレクトロニクス株式会社 | 蛍光体及びled並びに光源 |
| JP4422653B2 (ja) * | 2004-07-28 | 2010-02-24 | Dowaエレクトロニクス株式会社 | 蛍光体およびその製造方法、並びに光源 |
| US7476338B2 (en) * | 2004-08-27 | 2009-01-13 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method for the same, and light source |
| EP1630863B1 (en) * | 2004-08-31 | 2014-05-14 | Infineon Technologies AG | Method of fabricating a monolithically integrated vertical semiconducting device in an soi substrate |
| JP2007095827A (ja) * | 2005-09-27 | 2007-04-12 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| KR100734327B1 (ko) * | 2006-07-18 | 2007-07-02 | 삼성전자주식회사 | 서로 다른 두께의 게이트 절연막들을 구비하는 반도체소자의 제조방법 |
| US20080023767A1 (en) * | 2006-07-27 | 2008-01-31 | Voldman Steven H | High voltage electrostatic discharge protection devices and electrostatic discharge protection circuits |
| US7633135B2 (en) * | 2007-07-22 | 2009-12-15 | Alpha & Omega Semiconductor, Ltd. | Bottom anode Schottky diode structure and method |
| US7666750B2 (en) * | 2006-09-13 | 2010-02-23 | Agere Systems Inc. | Bipolar device having improved capacitance |
| KR100867977B1 (ko) | 2006-10-11 | 2008-11-10 | 한국과학기술원 | 인도시아닌 그린 혈중 농도 역학을 이용한 조직 관류 분석장치 및 그를 이용한 조직 관류 분석방법 |
| US7691734B2 (en) * | 2007-03-01 | 2010-04-06 | International Business Machines Corporation | Deep trench based far subcollector reachthrough |
| US7737526B2 (en) * | 2007-03-28 | 2010-06-15 | Advanced Analogic Technologies, Inc. | Isolated trench MOSFET in epi-less semiconductor sustrate |
| US7795681B2 (en) * | 2007-03-28 | 2010-09-14 | Advanced Analogic Technologies, Inc. | Isolated lateral MOSFET in epi-less substrate |
| FR2914783A1 (fr) | 2007-04-03 | 2008-10-10 | St Microelectronics Sa | Procede de fabrication d'un dispositif a gradient de concentration et dispositif correspondant. |
| DE102007056103B4 (de) * | 2007-11-15 | 2010-03-04 | Texas Instruments Deutschland Gmbh | Verfahren zur Herstellung von isolierten integrierten Halbleiterstrukturen |
| US7777295B2 (en) * | 2007-12-11 | 2010-08-17 | Hvvi Semiconductors, Inc. | Semiconductor structure and method of manufacture |
| ITMI20072341A1 (it) * | 2007-12-14 | 2009-06-15 | St Microelectronics Srl | Contatti profondi di dispositivi elettronici integrati basati su regioni inpiantate attraverso solchi |
| ITMI20072340A1 (it) * | 2007-12-14 | 2009-06-15 | St Microelectronics Srl | Regioni di guardia profonde migliorate per ridurre il latch-up in dispositivi elettronici |
| US20090283843A1 (en) * | 2008-05-13 | 2009-11-19 | Micrel, Inc. | NMOS Transistor Including Extended NLDD-Drain For Improved Ruggedness |
| US8258042B2 (en) * | 2009-08-28 | 2012-09-04 | Macronix International Co., Ltd. | Buried layer of an integrated circuit |
| US7977742B1 (en) | 2010-08-20 | 2011-07-12 | Monolithic Power Systems, Inc. | Trench-gate MOSFET with capacitively depleted drift region |
| US7977193B1 (en) * | 2010-08-20 | 2011-07-12 | Monolithic Power Systems, Inc. | Trench-gate MOSFET with capacitively depleted drift region |
| CN102820332B (zh) * | 2011-06-08 | 2016-04-27 | 无锡华润上华半导体有限公司 | 与mos管集成的垂直型双极结型晶体管及其制备方法 |
| US8723178B2 (en) | 2012-01-20 | 2014-05-13 | Monolithic Power Systems, Inc. | Integrated field effect transistors with high voltage drain sensing |
| US9093517B2 (en) * | 2012-05-25 | 2015-07-28 | Microsemi SoC Corporation | TID hardened and single event transient single event latchup resistant MOS transistors and fabrication process |
| US9293357B2 (en) | 2012-07-02 | 2016-03-22 | Texas Instruments Incorporated | Sinker with a reduced width |
| US20140213034A1 (en) * | 2013-01-29 | 2014-07-31 | United Microelectronics Corp. | Method for forming isolation structure |
| JP2014170831A (ja) * | 2013-03-04 | 2014-09-18 | Seiko Epson Corp | 回路装置及び電子機器 |
| US9006833B2 (en) * | 2013-07-02 | 2015-04-14 | Texas Instruments Incorporated | Bipolar transistor having sinker diffusion under a trench |
| US9076863B2 (en) * | 2013-07-17 | 2015-07-07 | Texas Instruments Incorporated | Semiconductor structure with a doped region between two deep trench isolation structures |
| US9087708B2 (en) * | 2013-08-06 | 2015-07-21 | Texas Instruments Incorporated | IC with floating buried layer ring for isolation of embedded islands |
| US9590039B2 (en) * | 2013-12-20 | 2017-03-07 | United Microelectronics Corp. | Semiconductor structure and method for forming the same |
| JP6566512B2 (ja) | 2014-04-15 | 2019-08-28 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| US9385187B2 (en) | 2014-04-25 | 2016-07-05 | Texas Instruments Incorporated | High breakdown N-type buried layer |
| JP6300638B2 (ja) * | 2014-05-26 | 2018-03-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9401410B2 (en) * | 2014-11-26 | 2016-07-26 | Texas Instruments Incorporated | Poly sandwich for deep trench fill |
| CN104464956B (zh) * | 2014-12-03 | 2017-02-01 | 中国科学院化学研究所 | 一种高精度、间距可控电极及其制备方法 |
| US10381342B2 (en) * | 2015-10-01 | 2019-08-13 | Texas Instruments Incorporated | High voltage bipolar structure for improved pulse width scalability |
| TWI693713B (zh) | 2016-07-22 | 2020-05-11 | 立積電子股份有限公司 | 半導體結構 |
| JP2017139503A (ja) * | 2017-05-18 | 2017-08-10 | セイコーエプソン株式会社 | 回路装置及び電子機器 |
| DE102017130928B4 (de) * | 2017-12-21 | 2025-10-30 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauelements mit einem Kanalstopper-Gebiet |
| JP7279393B2 (ja) | 2019-02-15 | 2023-05-23 | 富士電機株式会社 | 半導体集積回路の製造方法 |
| US20210167062A1 (en) | 2019-12-02 | 2021-06-03 | Stmicroelectronics (Rousset) Sas | Microelectronic device and method for manufacturing such a device |
| CN116266616B (zh) * | 2021-12-17 | 2025-06-10 | 武汉帝尔激光科技股份有限公司 | 一种太阳能电池片及其制备方法 |
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| JPS58100441A (ja) * | 1981-12-10 | 1983-06-15 | Toshiba Corp | 半導体装置の製造方法 |
| JPS60186035A (ja) * | 1984-03-05 | 1985-09-21 | Sanyo Electric Co Ltd | 不純物領域の形成方法 |
| JPS63166268A (ja) * | 1986-12-26 | 1988-07-09 | Toshiba Corp | 半導体装置およびその製造方法 |
| US4855244A (en) * | 1987-07-02 | 1989-08-08 | Texas Instruments Incorporated | Method of making vertical PNP transistor in merged bipolar/CMOS technology |
| JPH02151050A (ja) * | 1988-12-01 | 1990-06-11 | Nec Corp | 半導体装置 |
| JP2504567B2 (ja) * | 1989-06-14 | 1996-06-05 | 株式会社東芝 | 半導体装置の製造方法 |
| US5410175A (en) | 1989-08-31 | 1995-04-25 | Hamamatsu Photonics K.K. | Monolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate |
| US5175607A (en) * | 1990-04-26 | 1992-12-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
| US5374569A (en) | 1992-09-21 | 1994-12-20 | Siliconix Incorporated | Method for forming a BiCDMOS |
| US5559044A (en) * | 1992-09-21 | 1996-09-24 | Siliconix Incorporated | BiCDMOS process technology |
| US5422502A (en) | 1993-12-09 | 1995-06-06 | Northern Telecom Limited | Lateral bipolar transistor |
| JP3307785B2 (ja) * | 1994-12-13 | 2002-07-24 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
| JP3409548B2 (ja) * | 1995-12-12 | 2003-05-26 | ソニー株式会社 | 半導体装置の製造方法 |
| US5814858A (en) * | 1996-03-15 | 1998-09-29 | Siliconix Incorporated | Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer |
| US6025220A (en) * | 1996-06-18 | 2000-02-15 | Micron Technology, Inc. | Method of forming a polysilicon diode and devices incorporating such diode |
| JP3426928B2 (ja) | 1996-09-18 | 2003-07-14 | 株式会社東芝 | 電力用半導体装置 |
| JP2002512736A (ja) * | 1997-03-18 | 2002-04-23 | テレフオンアクチーボラゲツト エル エム エリクソン(パブル) | トレンチで分離されたバイポーラデバイス |
| US6287937B1 (en) * | 1997-08-21 | 2001-09-11 | Micron Technology, Inc. | Method for simultaneous dopant driving and dielectric densification in making a semiconductor structure |
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| FR2779573B1 (fr) * | 1998-06-05 | 2001-10-26 | St Microelectronics Sa | Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication |
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| JP3322239B2 (ja) * | 1999-04-30 | 2002-09-09 | 日本電気株式会社 | 半導体装置の製造方法 |
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| US6417554B1 (en) | 2000-04-27 | 2002-07-09 | International Rectifier Corporation | Latch free IGBT with schottky gate |
| US6445035B1 (en) * | 2000-07-24 | 2002-09-03 | Fairchild Semiconductor Corporation | Power MOS device with buried gate and groove |
| US6600199B2 (en) * | 2000-12-29 | 2003-07-29 | International Business Machines Corporation | Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunity |
| WO2002058160A1 (en) * | 2001-01-19 | 2002-07-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| JP2002280553A (ja) * | 2001-03-19 | 2002-09-27 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2002324846A (ja) * | 2001-04-25 | 2002-11-08 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
| TW483176B (en) * | 2001-05-31 | 2002-04-11 | United Microelectronics Corp | Method for decreasing leakage current of photodiode |
| JP2003158178A (ja) * | 2001-11-22 | 2003-05-30 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6656809B2 (en) * | 2002-01-15 | 2003-12-02 | International Business Machines Corporation | Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics |
| US7701001B2 (en) * | 2002-05-03 | 2010-04-20 | International Rectifier Corporation | Short channel trench power MOSFET with low threshold voltage |
| US6943426B2 (en) * | 2002-08-14 | 2005-09-13 | Advanced Analogic Technologies, Inc. | Complementary analog bipolar transistors with trench-constrained isolation diffusion |
| JP4775684B2 (ja) * | 2003-09-29 | 2011-09-21 | オンセミコンダクター・トレーディング・リミテッド | 半導体集積回路装置 |
| US7709345B2 (en) * | 2006-03-07 | 2010-05-04 | Micron Technology, Inc. | Trench isolation implantation |
| US7541247B2 (en) * | 2007-07-16 | 2009-06-02 | International Business Machines Corporation | Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication |
-
2002
- 2002-08-14 US US10/218,678 patent/US6943426B2/en not_active Expired - Lifetime
-
2003
- 2003-08-13 KR KR1020107023354A patent/KR101052667B1/ko not_active Expired - Fee Related
- 2003-08-13 KR KR1020107023358A patent/KR101052660B1/ko not_active Expired - Fee Related
- 2003-08-13 EP EP03788490A patent/EP1573822B1/en not_active Expired - Lifetime
- 2003-08-13 JP JP2004529419A patent/JP4756860B2/ja not_active Expired - Fee Related
- 2003-08-13 KR KR1020057002479A patent/KR101010426B1/ko not_active Expired - Fee Related
- 2003-08-13 WO PCT/US2003/025516 patent/WO2004017373A2/en not_active Ceased
- 2003-08-13 AU AU2003262679A patent/AU2003262679A1/en not_active Abandoned
- 2003-08-13 CN CNB038242044A patent/CN100416852C/zh not_active Expired - Fee Related
- 2003-08-13 EP EP10189464A patent/EP2290695A1/en not_active Ceased
- 2003-08-13 CN CN2008101314284A patent/CN101355084B/zh not_active Expired - Fee Related
-
2005
- 2005-08-15 US US11/204,216 patent/US7176548B2/en not_active Expired - Lifetime
- 2005-08-15 US US11/204,215 patent/US7489016B2/en not_active Expired - Fee Related
- 2005-08-15 US US11/203,789 patent/US7517748B2/en not_active Expired - Fee Related
-
2008
- 2008-07-31 US US12/221,155 patent/US8030152B2/en not_active Expired - Fee Related
- 2008-07-31 US US12/221,105 patent/US7834416B2/en not_active Expired - Fee Related
-
2011
- 2011-04-04 JP JP2011082772A patent/JP5470311B2/ja not_active Expired - Fee Related
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