CN100416852C - 具有槽限制的隔离扩散的互补模拟双极型晶体管 - Google Patents

具有槽限制的隔离扩散的互补模拟双极型晶体管 Download PDF

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Publication number
CN100416852C
CN100416852C CNB038242044A CN03824204A CN100416852C CN 100416852 C CN100416852 C CN 100416852C CN B038242044 A CNB038242044 A CN B038242044A CN 03824204 A CN03824204 A CN 03824204A CN 100416852 C CN100416852 C CN 100416852C
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semiconductor structure
buried layer
layer
substrate
epitaxial loayer
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Expired - Fee Related
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Chinese (zh)
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CN1698208A (zh
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理查德·K·威廉斯
迈克尔·E·康奈尔
陈伟田
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Advanced Analogic Technologies Inc
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Advanced Analogic Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/061—Manufacture or treatment of lateral BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB038242044A 2002-08-14 2003-08-13 具有槽限制的隔离扩散的互补模拟双极型晶体管 Expired - Fee Related CN100416852C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/218,678 US6943426B2 (en) 2002-08-14 2002-08-14 Complementary analog bipolar transistors with trench-constrained isolation diffusion
US10/218,678 2002-08-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2008101314284A Division CN101355084B (zh) 2002-08-14 2003-08-13 半导体结构及制造半导体器件的方法

Publications (2)

Publication Number Publication Date
CN1698208A CN1698208A (zh) 2005-11-16
CN100416852C true CN100416852C (zh) 2008-09-03

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CNB038242044A Expired - Fee Related CN100416852C (zh) 2002-08-14 2003-08-13 具有槽限制的隔离扩散的互补模拟双极型晶体管
CN2008101314284A Expired - Fee Related CN101355084B (zh) 2002-08-14 2003-08-13 半导体结构及制造半导体器件的方法

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Country Link
US (6) US6943426B2 (enExample)
EP (2) EP2290695A1 (enExample)
JP (2) JP4756860B2 (enExample)
KR (3) KR101010426B1 (enExample)
CN (2) CN100416852C (enExample)
AU (1) AU2003262679A1 (enExample)
WO (1) WO2004017373A2 (enExample)

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US7741661B2 (en) * 2002-08-14 2010-06-22 Advanced Analogic Technologies, Inc. Isolation and termination structures for semiconductor die
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US8513087B2 (en) * 2002-08-14 2013-08-20 Advanced Analogic Technologies, Incorporated Processes for forming isolation structures for integrated circuit devices
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US20050272230A1 (en) 2005-12-08
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JP2005536060A (ja) 2005-11-24
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CN101355084A (zh) 2009-01-28
US7834416B2 (en) 2010-11-16
EP1573822A4 (en) 2008-04-23
KR101010426B1 (ko) 2011-01-21
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US7489016B2 (en) 2009-02-10
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AU2003262679A1 (en) 2004-03-03
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US8030152B2 (en) 2011-10-04
US6943426B2 (en) 2005-09-13
US20080290452A1 (en) 2008-11-27
CN101355084B (zh) 2012-07-18
US7176548B2 (en) 2007-02-13
CN1698208A (zh) 2005-11-16
US20040032005A1 (en) 2004-02-19
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US7517748B2 (en) 2009-04-14
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US20050272207A1 (en) 2005-12-08
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