AU2003262679A1 - Complementary analog bipolar transistors with trench-constrained isolation diffusion - Google Patents

Complementary analog bipolar transistors with trench-constrained isolation diffusion

Info

Publication number
AU2003262679A1
AU2003262679A1 AU2003262679A AU2003262679A AU2003262679A1 AU 2003262679 A1 AU2003262679 A1 AU 2003262679A1 AU 2003262679 A AU2003262679 A AU 2003262679A AU 2003262679 A AU2003262679 A AU 2003262679A AU 2003262679 A1 AU2003262679 A1 AU 2003262679A1
Authority
AU
Australia
Prior art keywords
trench
bipolar transistors
isolation diffusion
complementary analog
analog bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003262679A
Other languages
English (en)
Other versions
AU2003262679A8 (en
Inventor
Wai Tien Chan
Michael E. Cornell
Richard K. Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Analogic Technologies Inc
Original Assignee
Advanced Analogic Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Analogic Technologies Inc filed Critical Advanced Analogic Technologies Inc
Publication of AU2003262679A8 publication Critical patent/AU2003262679A8/xx
Publication of AU2003262679A1 publication Critical patent/AU2003262679A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/061—Manufacture or treatment of lateral BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AU2003262679A 2002-08-14 2003-08-13 Complementary analog bipolar transistors with trench-constrained isolation diffusion Abandoned AU2003262679A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/218,678 US6943426B2 (en) 2002-08-14 2002-08-14 Complementary analog bipolar transistors with trench-constrained isolation diffusion
US10/218,678 2002-08-14
PCT/US2003/025516 WO2004017373A2 (en) 2002-08-14 2003-08-13 Complementary analog bipolar transistors with trench-constrained isolation diffusion

Publications (2)

Publication Number Publication Date
AU2003262679A8 AU2003262679A8 (en) 2004-03-03
AU2003262679A1 true AU2003262679A1 (en) 2004-03-03

Family

ID=31714579

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003262679A Abandoned AU2003262679A1 (en) 2002-08-14 2003-08-13 Complementary analog bipolar transistors with trench-constrained isolation diffusion

Country Status (7)

Country Link
US (6) US6943426B2 (enExample)
EP (2) EP2290695A1 (enExample)
JP (2) JP4756860B2 (enExample)
KR (3) KR101010426B1 (enExample)
CN (2) CN100416852C (enExample)
AU (1) AU2003262679A1 (enExample)
WO (1) WO2004017373A2 (enExample)

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Also Published As

Publication number Publication date
AU2003262679A8 (en) 2004-03-03
WO2004017373A9 (en) 2004-06-24
JP5470311B2 (ja) 2014-04-16
EP1573822B1 (en) 2012-03-14
US20050272230A1 (en) 2005-12-08
EP2290695A1 (en) 2011-03-02
JP2005536060A (ja) 2005-11-24
KR20050054918A (ko) 2005-06-10
CN101355084A (zh) 2009-01-28
US7834416B2 (en) 2010-11-16
EP1573822A4 (en) 2008-04-23
KR101010426B1 (ko) 2011-01-21
KR101052660B1 (ko) 2011-07-28
US7489016B2 (en) 2009-02-10
WO2004017373A3 (en) 2005-07-14
KR20100118153A (ko) 2010-11-04
CN100416852C (zh) 2008-09-03
WO2004017373A2 (en) 2004-02-26
US8030152B2 (en) 2011-10-04
US6943426B2 (en) 2005-09-13
US20080290452A1 (en) 2008-11-27
CN101355084B (zh) 2012-07-18
US7176548B2 (en) 2007-02-13
CN1698208A (zh) 2005-11-16
US20040032005A1 (en) 2004-02-19
KR101052667B1 (ko) 2011-07-28
US7517748B2 (en) 2009-04-14
JP4756860B2 (ja) 2011-08-24
US20050272207A1 (en) 2005-12-08
EP1573822A2 (en) 2005-09-14
US20080293214A1 (en) 2008-11-27
JP2011159991A (ja) 2011-08-18
US20050269597A1 (en) 2005-12-08
KR20100118152A (ko) 2010-11-04

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