JP2009507378A5 - - Google Patents
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- Publication number
- JP2009507378A5 JP2009507378A5 JP2008529307A JP2008529307A JP2009507378A5 JP 2009507378 A5 JP2009507378 A5 JP 2009507378A5 JP 2008529307 A JP2008529307 A JP 2008529307A JP 2008529307 A JP2008529307 A JP 2008529307A JP 2009507378 A5 JP2009507378 A5 JP 2009507378A5
- Authority
- JP
- Japan
- Prior art keywords
- doped
- conductivity type
- region
- forming
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001052 transient effect Effects 0.000 claims 10
- 238000000034 method Methods 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000002019 doping agent Substances 0.000 claims 4
- 230000015556 catabolic process Effects 0.000 claims 2
- 230000000295 complement effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/217,304 US7285469B2 (en) | 2005-09-02 | 2005-09-02 | Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns |
| PCT/US2006/034224 WO2007028016A2 (en) | 2005-09-02 | 2006-09-01 | Bipolar method and structure with depletable collector colums |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009507378A JP2009507378A (ja) | 2009-02-19 |
| JP2009507378A5 true JP2009507378A5 (enExample) | 2012-04-12 |
Family
ID=37690563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008529307A Pending JP2009507378A (ja) | 2005-09-02 | 2006-09-01 | 空乏可能コレクタ列を備えた改良されたｂｖｃｅｏ／ｒｃｓ相殺を有するバイポーラ構造 |
Country Status (7)
| Country | Link |
|---|---|
| US (4) | US7285469B2 (enExample) |
| EP (1) | EP1922758B1 (enExample) |
| JP (1) | JP2009507378A (enExample) |
| KR (1) | KR100956241B1 (enExample) |
| CN (1) | CN101258601B (enExample) |
| TW (1) | TWI356492B (enExample) |
| WO (1) | WO2007028016A2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7482672B2 (en) * | 2006-06-30 | 2009-01-27 | International Business Machines Corporation | Semiconductor device structures for bipolar junction transistors |
| KR100812079B1 (ko) * | 2006-08-22 | 2008-03-07 | 동부일렉트로닉스 주식회사 | 수직형 바이폴라 접합 트랜지스터 및 그 제조 방법, 이를갖는 씨모스 이미지 센서 및 그 제조 방법 |
| JP5217257B2 (ja) * | 2007-06-06 | 2013-06-19 | 株式会社デンソー | 半導体装置およびその製造方法 |
| US7847373B2 (en) * | 2008-12-22 | 2010-12-07 | Agostino Pirovano | Fabricating bipolar junction select transistors for semiconductor memories |
| WO2010118215A1 (en) * | 2009-04-09 | 2010-10-14 | Georgia Tech Research Corporation | Superjunction collectors for transistors & semiconductor devices |
| US12426286B2 (en) | 2016-06-25 | 2025-09-23 | Texas Instruments Incorporated | Radiation enhanced bipolar transistor |
| CN110010693B (zh) * | 2019-05-07 | 2024-03-12 | 无锡紫光微电子有限公司 | 一种高压深沟槽型超结mosfet的结构及其制作方法 |
| DE112020005498T5 (de) * | 2019-11-08 | 2022-09-15 | Nisshinbo Micro Devices Inc. | Halbleiterbauelement |
| CN118825062B (zh) * | 2024-09-13 | 2024-12-27 | 芯联先锋集成电路制造(绍兴)有限公司 | 半导体器件、双极型晶体管及其制备方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3131611A1 (de) * | 1981-08-10 | 1983-02-24 | Siemens AG, 1000 Berlin und 8000 München | Epitaxialer transistor |
| US4532003A (en) | 1982-08-09 | 1985-07-30 | Harris Corporation | Method of fabrication bipolar transistor with improved base collector breakdown voltage and collector series resistance |
| US4729008A (en) | 1982-12-08 | 1988-03-01 | Harris Corporation | High voltage IC bipolar transistors operable to BVCBO and method of fabrication |
| US5344785A (en) * | 1992-03-13 | 1994-09-06 | United Technologies Corporation | Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate |
| US5428233A (en) * | 1994-04-04 | 1995-06-27 | Motorola Inc. | Voltage controlled resistive device |
| US5633180A (en) | 1995-06-01 | 1997-05-27 | Harris Corporation | Method of forming P-type islands over P-type buried layer |
| US6423990B1 (en) * | 1997-09-29 | 2002-07-23 | National Scientific Corporation | Vertical heterojunction bipolar transistor |
| JP4447065B2 (ja) * | 1999-01-11 | 2010-04-07 | 富士電機システムズ株式会社 | 超接合半導体素子の製造方法 |
| US6475864B1 (en) | 1999-10-21 | 2002-11-05 | Fuji Electric Co., Ltd. | Method of manufacturing a super-junction semiconductor device with an conductivity type layer |
| US6559517B2 (en) | 2000-04-27 | 2003-05-06 | En Jun Zhu | Structure for a semiconductor device |
| JP4534303B2 (ja) | 2000-04-27 | 2010-09-01 | 富士電機システムズ株式会社 | 横型超接合半導体素子 |
| DE10106073C2 (de) | 2001-02-09 | 2003-01-30 | Infineon Technologies Ag | SOI-Bauelement |
| US6822292B2 (en) * | 2001-11-21 | 2004-11-23 | Intersil Americas Inc. | Lateral MOSFET structure of an integrated circuit having separated device regions |
| JP4166627B2 (ja) * | 2003-05-30 | 2008-10-15 | 株式会社デンソー | 半導体装置 |
| CN1823421B (zh) * | 2003-08-20 | 2010-04-28 | 株式会社电装 | 垂直型半导体装置 |
| US6740563B1 (en) * | 2003-10-02 | 2004-05-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Amorphizing ion implant method for forming polysilicon emitter bipolar transistor |
| JP4904673B2 (ja) * | 2004-02-09 | 2012-03-28 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
-
2005
- 2005-09-02 US US11/217,304 patent/US7285469B2/en not_active Expired - Lifetime
-
2006
- 2006-08-17 TW TW095130207A patent/TWI356492B/zh active
- 2006-09-01 JP JP2008529307A patent/JP2009507378A/ja active Pending
- 2006-09-01 EP EP06802800.0A patent/EP1922758B1/en active Active
- 2006-09-01 WO PCT/US2006/034224 patent/WO2007028016A2/en not_active Ceased
- 2006-09-01 CN CN2006800322314A patent/CN101258601B/zh not_active Expired - Fee Related
- 2006-09-01 KR KR1020087004866A patent/KR100956241B1/ko not_active Expired - Fee Related
-
2007
- 2007-08-08 US US11/835,885 patent/US7473983B2/en not_active Ceased
-
2011
- 2011-01-06 US US12/985,856 patent/USRE43042E1/en not_active Expired - Lifetime
- 2011-11-14 US US13/295,764 patent/USRE44140E1/en not_active Expired - Lifetime
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