JP2009507378A - 空乏可能コレクタ列を備えた改良されたｂｖｃｅｏ／ｒｃｓ相殺を有するバイポーラ構造 - Google Patents

空乏可能コレクタ列を備えた改良されたｂｖｃｅｏ／ｒｃｓ相殺を有するバイポーラ構造 Download PDF

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JP2009507378A
JP2009507378A JP2008529307A JP2008529307A JP2009507378A JP 2009507378 A JP2009507378 A JP 2009507378A JP 2008529307 A JP2008529307 A JP 2008529307A JP 2008529307 A JP2008529307 A JP 2008529307A JP 2009507378 A JP2009507378 A JP 2009507378A
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bipolar transistor
doped
emitter
integrated circuit
region
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Japanese (ja)
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JP2009507378A5 (enExample
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ジェームス ダグラス ビーソム，
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インターシル アメリカズ インク
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions

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  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP2008529307A 2005-09-02 2006-09-01 空乏可能コレクタ列を備えた改良されたｂｖｃｅｏ／ｒｃｓ相殺を有するバイポーラ構造 Pending JP2009507378A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/217,304 US7285469B2 (en) 2005-09-02 2005-09-02 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns
PCT/US2006/034224 WO2007028016A2 (en) 2005-09-02 2006-09-01 Bipolar method and structure with depletable collector colums

Publications (2)

Publication Number Publication Date
JP2009507378A true JP2009507378A (ja) 2009-02-19
JP2009507378A5 JP2009507378A5 (enExample) 2012-04-12

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Family Applications (1)

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JP2008529307A Pending JP2009507378A (ja) 2005-09-02 2006-09-01 空乏可能コレクタ列を備えた改良されたｂｖｃｅｏ／ｒｃｓ相殺を有するバイポーラ構造

Country Status (7)

Country Link
US (4) US7285469B2 (enExample)
EP (1) EP1922758B1 (enExample)
JP (1) JP2009507378A (enExample)
KR (1) KR100956241B1 (enExample)
CN (1) CN101258601B (enExample)
TW (1) TWI356492B (enExample)
WO (1) WO2007028016A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7482672B2 (en) * 2006-06-30 2009-01-27 International Business Machines Corporation Semiconductor device structures for bipolar junction transistors
KR100812079B1 (ko) * 2006-08-22 2008-03-07 동부일렉트로닉스 주식회사 수직형 바이폴라 접합 트랜지스터 및 그 제조 방법, 이를갖는 씨모스 이미지 센서 및 그 제조 방법
JP5217257B2 (ja) * 2007-06-06 2013-06-19 株式会社デンソー 半導体装置およびその製造方法
US7847373B2 (en) * 2008-12-22 2010-12-07 Agostino Pirovano Fabricating bipolar junction select transistors for semiconductor memories
WO2010118215A1 (en) * 2009-04-09 2010-10-14 Georgia Tech Research Corporation Superjunction collectors for transistors & semiconductor devices
US12426286B2 (en) 2016-06-25 2025-09-23 Texas Instruments Incorporated Radiation enhanced bipolar transistor
CN110010693B (zh) * 2019-05-07 2024-03-12 无锡紫光微电子有限公司 一种高压深沟槽型超结mosfet的结构及其制作方法
DE112020005498T5 (de) * 2019-11-08 2022-09-15 Nisshinbo Micro Devices Inc. Halbleiterbauelement
CN118825062B (zh) * 2024-09-13 2024-12-27 芯联先锋集成电路制造(绍兴)有限公司 半导体器件、双极型晶体管及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840857A (ja) * 1981-08-10 1983-03-09 シ−メンス・アクチエンゲゼルシヤフト Ｍｏｓｆｅｔ
JP2000208527A (ja) * 1999-01-11 2000-07-28 Fuji Electric Co Ltd 超接合半導体素子の製造方法および超接合半導体素子

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US4532003A (en) 1982-08-09 1985-07-30 Harris Corporation Method of fabrication bipolar transistor with improved base collector breakdown voltage and collector series resistance
US4729008A (en) 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
US5344785A (en) * 1992-03-13 1994-09-06 United Technologies Corporation Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate
US5428233A (en) * 1994-04-04 1995-06-27 Motorola Inc. Voltage controlled resistive device
US5633180A (en) 1995-06-01 1997-05-27 Harris Corporation Method of forming P-type islands over P-type buried layer
US6423990B1 (en) * 1997-09-29 2002-07-23 National Scientific Corporation Vertical heterojunction bipolar transistor
US6475864B1 (en) 1999-10-21 2002-11-05 Fuji Electric Co., Ltd. Method of manufacturing a super-junction semiconductor device with an conductivity type layer
US6559517B2 (en) 2000-04-27 2003-05-06 En Jun Zhu Structure for a semiconductor device
JP4534303B2 (ja) 2000-04-27 2010-09-01 富士電機システムズ株式会社 横型超接合半導体素子
DE10106073C2 (de) 2001-02-09 2003-01-30 Infineon Technologies Ag SOI-Bauelement
US6822292B2 (en) * 2001-11-21 2004-11-23 Intersil Americas Inc. Lateral MOSFET structure of an integrated circuit having separated device regions
JP4166627B2 (ja) * 2003-05-30 2008-10-15 株式会社デンソー 半導体装置
CN1823421B (zh) * 2003-08-20 2010-04-28 株式会社电装 垂直型半导体装置
US6740563B1 (en) * 2003-10-02 2004-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Amorphizing ion implant method for forming polysilicon emitter bipolar transistor
JP4904673B2 (ja) * 2004-02-09 2012-03-28 富士電機株式会社 半導体装置および半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840857A (ja) * 1981-08-10 1983-03-09 シ−メンス・アクチエンゲゼルシヤフト Ｍｏｓｆｅｔ
JP2000208527A (ja) * 1999-01-11 2000-07-28 Fuji Electric Co Ltd 超接合半導体素子の製造方法および超接合半導体素子

Also Published As

Publication number Publication date
CN101258601A (zh) 2008-09-03
USRE43042E1 (en) 2011-12-27
KR20080037690A (ko) 2008-04-30
CN101258601B (zh) 2010-12-15
WO2007028016A3 (en) 2007-05-24
US7473983B2 (en) 2009-01-06
EP1922758B1 (en) 2019-12-04
TWI356492B (en) 2012-01-11
US20070273006A1 (en) 2007-11-29
WO2007028016A2 (en) 2007-03-08
US7285469B2 (en) 2007-10-23
USRE44140E1 (en) 2013-04-09
TW200721482A (en) 2007-06-01
KR100956241B1 (ko) 2010-05-06
EP1922758A2 (en) 2008-05-21
US20070052066A1 (en) 2007-03-08

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