KR100956241B1 - 공핍가능한 콜렉터 컬럼을 가진 바이폴라 방법 및 구조 - Google Patents

공핍가능한 콜렉터 컬럼을 가진 바이폴라 방법 및 구조 Download PDF

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Publication number
KR100956241B1
KR100956241B1 KR1020087004866A KR20087004866A KR100956241B1 KR 100956241 B1 KR100956241 B1 KR 100956241B1 KR 1020087004866 A KR1020087004866 A KR 1020087004866A KR 20087004866 A KR20087004866 A KR 20087004866A KR 100956241 B1 KR100956241 B1 KR 100956241B1
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South Korea
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doped
emitter
bipolar transistor
region
collector
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Korean (ko)
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KR20080037690A (ko
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제임스 더글라스 베솜
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인터실 아메리카스 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions

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  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
KR1020087004866A 2005-09-02 2006-09-01 공핍가능한 콜렉터 컬럼을 가진 바이폴라 방법 및 구조 Expired - Fee Related KR100956241B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/217,304 US7285469B2 (en) 2005-09-02 2005-09-02 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns
US11/217,304 2005-09-02

Publications (2)

Publication Number Publication Date
KR20080037690A KR20080037690A (ko) 2008-04-30
KR100956241B1 true KR100956241B1 (ko) 2010-05-06

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Family Applications (1)

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KR1020087004866A Expired - Fee Related KR100956241B1 (ko) 2005-09-02 2006-09-01 공핍가능한 콜렉터 컬럼을 가진 바이폴라 방법 및 구조

Country Status (7)

Country Link
US (4) US7285469B2 (enExample)
EP (1) EP1922758B1 (enExample)
JP (1) JP2009507378A (enExample)
KR (1) KR100956241B1 (enExample)
CN (1) CN101258601B (enExample)
TW (1) TWI356492B (enExample)
WO (1) WO2007028016A2 (enExample)

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US7482672B2 (en) * 2006-06-30 2009-01-27 International Business Machines Corporation Semiconductor device structures for bipolar junction transistors
KR100812079B1 (ko) * 2006-08-22 2008-03-07 동부일렉트로닉스 주식회사 수직형 바이폴라 접합 트랜지스터 및 그 제조 방법, 이를갖는 씨모스 이미지 센서 및 그 제조 방법
JP5217257B2 (ja) * 2007-06-06 2013-06-19 株式会社デンソー 半導体装置およびその製造方法
US7847373B2 (en) * 2008-12-22 2010-12-07 Agostino Pirovano Fabricating bipolar junction select transistors for semiconductor memories
US8546850B2 (en) * 2009-04-09 2013-10-01 Georgia Gech Research Corporation Superjunction collectors for transistors and semiconductor devices
US12426286B2 (en) * 2016-06-25 2025-09-23 Texas Instruments Incorporated Radiation enhanced bipolar transistor
CN110010693B (zh) * 2019-05-07 2024-03-12 无锡紫光微电子有限公司 一种高压深沟槽型超结mosfet的结构及其制作方法
DE112020005498T5 (de) * 2019-11-08 2022-09-15 Nisshinbo Micro Devices Inc. Halbleiterbauelement
CN118825062B (zh) * 2024-09-13 2024-12-27 芯联先锋集成电路制造(绍兴)有限公司 半导体器件、双极型晶体管及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001084631A1 (en) * 2000-04-27 2001-11-08 En Jun Zhu Improved structure for a semiconductor device
US20030008483A1 (en) * 1999-10-21 2003-01-09 Fuji Electric, Co., Ltd. Super-junction semiconductor device and the method of manufacturing the same
US20040212032A1 (en) 2000-04-27 2004-10-28 Fuji Electric Co., Ltd. Lateral super-junction semiconductor device

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DE3131611A1 (de) * 1981-08-10 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Epitaxialer transistor
US4532003A (en) * 1982-08-09 1985-07-30 Harris Corporation Method of fabrication bipolar transistor with improved base collector breakdown voltage and collector series resistance
US4729008A (en) * 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
US5344785A (en) * 1992-03-13 1994-09-06 United Technologies Corporation Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate
US5428233A (en) * 1994-04-04 1995-06-27 Motorola Inc. Voltage controlled resistive device
US5633180A (en) * 1995-06-01 1997-05-27 Harris Corporation Method of forming P-type islands over P-type buried layer
US6423990B1 (en) * 1997-09-29 2002-07-23 National Scientific Corporation Vertical heterojunction bipolar transistor
JP4447065B2 (ja) * 1999-01-11 2010-04-07 富士電機システムズ株式会社 超接合半導体素子の製造方法
DE10106073C2 (de) * 2001-02-09 2003-01-30 Infineon Technologies Ag SOI-Bauelement
US6822292B2 (en) * 2001-11-21 2004-11-23 Intersil Americas Inc. Lateral MOSFET structure of an integrated circuit having separated device regions
JP4166627B2 (ja) * 2003-05-30 2008-10-15 株式会社デンソー 半導体装置
US7170119B2 (en) * 2003-08-20 2007-01-30 Denso Corporation Vertical type semiconductor device
US6740563B1 (en) * 2003-10-02 2004-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Amorphizing ion implant method for forming polysilicon emitter bipolar transistor
JP4904673B2 (ja) * 2004-02-09 2012-03-28 富士電機株式会社 半導体装置および半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030008483A1 (en) * 1999-10-21 2003-01-09 Fuji Electric, Co., Ltd. Super-junction semiconductor device and the method of manufacturing the same
WO2001084631A1 (en) * 2000-04-27 2001-11-08 En Jun Zhu Improved structure for a semiconductor device
US20020000640A1 (en) 2000-04-27 2002-01-03 Zhu En Jun Structure for a semiconductor device
US20040212032A1 (en) 2000-04-27 2004-10-28 Fuji Electric Co., Ltd. Lateral super-junction semiconductor device

Also Published As

Publication number Publication date
USRE43042E1 (en) 2011-12-27
US20070052066A1 (en) 2007-03-08
USRE44140E1 (en) 2013-04-09
TW200721482A (en) 2007-06-01
JP2009507378A (ja) 2009-02-19
CN101258601B (zh) 2010-12-15
US20070273006A1 (en) 2007-11-29
CN101258601A (zh) 2008-09-03
WO2007028016A3 (en) 2007-05-24
WO2007028016A2 (en) 2007-03-08
EP1922758A2 (en) 2008-05-21
US7473983B2 (en) 2009-01-06
EP1922758B1 (en) 2019-12-04
US7285469B2 (en) 2007-10-23
KR20080037690A (ko) 2008-04-30
TWI356492B (en) 2012-01-11

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