ATE259544T1 - Bipolartransistorstruktur mit ballastwiderstand - Google Patents

Bipolartransistorstruktur mit ballastwiderstand

Info

Publication number
ATE259544T1
ATE259544T1 AT94913907T AT94913907T ATE259544T1 AT E259544 T1 ATE259544 T1 AT E259544T1 AT 94913907 T AT94913907 T AT 94913907T AT 94913907 T AT94913907 T AT 94913907T AT E259544 T1 ATE259544 T1 AT E259544T1
Authority
AT
Austria
Prior art keywords
emitter
base
ballast resistor
regions
polysilicon layer
Prior art date
Application number
AT94913907T
Other languages
English (en)
Inventor
James C Moyer
Original Assignee
Micrel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micrel Inc filed Critical Micrel Inc
Application granted granted Critical
Publication of ATE259544T1 publication Critical patent/ATE259544T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0813—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
AT94913907T 1993-03-25 1994-03-22 Bipolartransistorstruktur mit ballastwiderstand ATE259544T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3706293A 1993-03-25 1993-03-25
US08/197,658 US5374844A (en) 1993-03-25 1994-02-17 Bipolar transistor structure using ballast resistor
PCT/US1994/002804 WO1994022170A1 (en) 1993-03-25 1994-03-22 Bipolar transistor structure using ballast resistor

Publications (1)

Publication Number Publication Date
ATE259544T1 true ATE259544T1 (de) 2004-02-15

Family

ID=26713759

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94913907T ATE259544T1 (de) 1993-03-25 1994-03-22 Bipolartransistorstruktur mit ballastwiderstand

Country Status (5)

Country Link
US (1) US5374844A (de)
EP (1) EP0691034B1 (de)
AT (1) ATE259544T1 (de)
DE (2) DE69433545D1 (de)
WO (1) WO1994022170A1 (de)

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US5424655A (en) * 1994-05-20 1995-06-13 Quicklogic Corporation Programmable application specific integrated circuit employing antifuses and methods therefor
US5939739A (en) * 1996-05-31 1999-08-17 The Whitaker Corporation Separation of thermal and electrical paths in flip chip ballasted power heterojunction bipolar transistors
JPH11512235A (ja) * 1996-07-03 1999-10-19 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 特殊エミッタ接続を具えた半導体デバイス
US5821602A (en) * 1996-11-25 1998-10-13 Spectrian, Inc. RF power transistor having improved stability and gain
SE521385C2 (sv) * 1997-04-04 2003-10-28 Ericsson Telefon Ab L M Bipolär transistorstruktur
US6762479B2 (en) * 1998-11-06 2004-07-13 International Business Machines Corporation Microwave array transistor for low-noise and high-power applications
US6437419B1 (en) * 1999-11-29 2002-08-20 Fairchild Semiconductor Corporation Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices
US7439146B1 (en) * 2000-08-30 2008-10-21 Agere Systems Inc. Field plated resistor with enhanced routing area thereover
US6455919B1 (en) 2001-03-19 2002-09-24 International Business Machines Corporation Internally ballasted silicon germanium transistor
US6703252B2 (en) * 2002-01-31 2004-03-09 Hewlett-Packard Development Company, L.P. Method of manufacturing an emitter
US6835947B2 (en) * 2002-01-31 2004-12-28 Hewlett-Packard Development Company, L.P. Emitter and method of making
US6852554B2 (en) 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
US6787792B2 (en) 2002-04-18 2004-09-07 Hewlett-Packard Development Company, L.P. Emitter with filled zeolite emission layer
US7170223B2 (en) 2002-07-17 2007-01-30 Hewlett-Packard Development Company, L.P. Emitter with dielectric layer having implanted conducting centers
US6888710B2 (en) * 2003-01-03 2005-05-03 Micrel, Incorporated Insulated gate bipolar transistor and electrostatic discharge cell protection utilizing insulated gate bipolar transistors
US6861711B2 (en) * 2003-01-03 2005-03-01 Micrel, Incorporated Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors
US6864537B1 (en) 2003-01-03 2005-03-08 Micrel, Incorporated Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors
JP4489366B2 (ja) * 2003-03-17 2010-06-23 株式会社日立製作所 半導体装置
US7087973B2 (en) 2003-04-01 2006-08-08 Micrel, Incorporated Ballast resistors for transistor devices
WO2005052997A2 (en) * 2003-11-21 2005-06-09 Wisconsin Alumni Resarch Foundation Solid-state high power device and method
US20060138597A1 (en) * 2004-12-24 2006-06-29 Johnson David A Combined high reliability contact metal/ ballast resistor/ bypass capacitor structure for power transistors
JP4959140B2 (ja) * 2005-02-04 2012-06-20 株式会社日立超エル・エス・アイ・システムズ 半導体装置
US8018006B2 (en) 2005-02-04 2011-09-13 Hitachi Ulsi Systems Co., Ltd. Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation
JP2006332117A (ja) * 2005-05-23 2006-12-07 Sharp Corp トランジスタ構造および電子機器
US7671423B2 (en) * 2008-01-10 2010-03-02 International Business Machines Corporation Resistor ballasted transistors
JP5371274B2 (ja) * 2008-03-27 2013-12-18 ルネサスエレクトロニクス株式会社 半導体装置
US9911836B2 (en) * 2011-02-25 2018-03-06 Qorvo Us, Inc. Vertical ballast technology for power HBT device
US9897512B2 (en) 2011-04-15 2018-02-20 Qorvo Us, Inc. Laminate variables measured electrically
CN103730466A (zh) * 2013-12-06 2014-04-16 李思敏 具有集成电阻的槽形栅多晶硅结构的联栅晶体管

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US3918080A (en) * 1968-06-21 1975-11-04 Philips Corp Multiemitter transistor with continuous ballast resistor
JPS54120587A (en) * 1978-03-10 1979-09-19 Fujitsu Ltd Transistor
JPS55127064A (en) * 1979-03-26 1980-10-01 Hitachi Ltd Semiconductor device
US4411708A (en) * 1980-08-25 1983-10-25 Trw Inc. Method of making precision doped polysilicon vertical ballast resistors by multiple implantations
US4686557A (en) * 1980-09-19 1987-08-11 Siemens Aktiengesellschaft Semiconductor element and method for producing the same
JPS5799771A (en) * 1980-12-12 1982-06-21 Hitachi Ltd Semiconductor device
JPS57138174A (en) * 1981-02-20 1982-08-26 Hitachi Ltd Semiconductor device
US4417265A (en) * 1981-03-26 1983-11-22 National Semiconductor Corporation Lateral PNP power transistor
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
DE3329241A1 (de) * 1983-08-12 1985-02-21 Siemens AG, 1000 Berlin und 8000 München Leistungstransistor
JPS6124264A (ja) * 1984-07-13 1986-02-01 Toshiba Corp 半導体装置
US4656496A (en) * 1985-02-04 1987-04-07 National Semiconductor Corporation Power transistor emitter ballasting
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
US4864379A (en) * 1988-05-20 1989-09-05 General Electric Company Bipolar transistor with field shields
US5047357A (en) * 1989-02-03 1991-09-10 Texas Instruments Incorporated Method for forming emitters in a BiCMOS process
US5206182A (en) * 1989-06-08 1993-04-27 United Technologies Corporation Trench isolation process
JPH03126229A (ja) * 1989-10-12 1991-05-29 Fuji Electric Co Ltd トランジスタ
EP0435541A3 (en) * 1989-12-26 1991-07-31 Motorola Inc. Semiconductor device having internal current limit overvoltage protection
JPH03288469A (ja) * 1990-04-04 1991-12-18 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
DE69433545D1 (de) 2004-03-18
EP0691034A1 (de) 1996-01-10
EP0691034B1 (de) 2004-02-11
EP0691034A4 (de) 1996-03-13
US5374844A (en) 1994-12-20
DE691034T1 (de) 1996-11-28
WO1994022170A1 (en) 1994-09-29

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties