KR101052667B1 - 트렌치 구속 분리 확산영역을 갖는 상보형 아날로그 바이폴라 트랜지스터 - Google Patents

트렌치 구속 분리 확산영역을 갖는 상보형 아날로그 바이폴라 트랜지스터 Download PDF

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KR101052667B1
KR101052667B1 KR1020107023354A KR20107023354A KR101052667B1 KR 101052667 B1 KR101052667 B1 KR 101052667B1 KR 1020107023354 A KR1020107023354 A KR 1020107023354A KR 20107023354 A KR20107023354 A KR 20107023354A KR 101052667 B1 KR101052667 B1 KR 101052667B1
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layer
region
epitaxial layer
conductivity type
buried layer
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KR20100118152A (ko
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리차드 케이. 윌리엄스
마이클 이. 코넬
와이 티엔 찬
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어드밴스드 아날로직 테크놀로지스 인코퍼레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/061—Manufacture or treatment of lateral BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020107023354A 2002-08-14 2003-08-13 트렌치 구속 분리 확산영역을 갖는 상보형 아날로그 바이폴라 트랜지스터 Expired - Fee Related KR101052667B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/218,678 US6943426B2 (en) 2002-08-14 2002-08-14 Complementary analog bipolar transistors with trench-constrained isolation diffusion
US10/218,678 2002-08-14
PCT/US2003/025516 WO2004017373A2 (en) 2002-08-14 2003-08-13 Complementary analog bipolar transistors with trench-constrained isolation diffusion

Related Parent Applications (1)

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KR1020057002479A Division KR101010426B1 (ko) 2002-08-14 2003-08-13 트렌치 구속 분리 확산영역을 갖는 상보형 아날로그 바이폴라 트랜지스터

Publications (2)

Publication Number Publication Date
KR20100118152A KR20100118152A (ko) 2010-11-04
KR101052667B1 true KR101052667B1 (ko) 2011-07-28

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KR1020107023354A Expired - Fee Related KR101052667B1 (ko) 2002-08-14 2003-08-13 트렌치 구속 분리 확산영역을 갖는 상보형 아날로그 바이폴라 트랜지스터
KR1020107023358A Expired - Fee Related KR101052660B1 (ko) 2002-08-14 2003-08-13 트렌치 구속 분리 확산영역을 갖는 상보형 아날로그 바이폴라 트랜지스터
KR1020057002479A Expired - Fee Related KR101010426B1 (ko) 2002-08-14 2003-08-13 트렌치 구속 분리 확산영역을 갖는 상보형 아날로그 바이폴라 트랜지스터

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KR1020057002479A Expired - Fee Related KR101010426B1 (ko) 2002-08-14 2003-08-13 트렌치 구속 분리 확산영역을 갖는 상보형 아날로그 바이폴라 트랜지스터

Country Status (7)

Country Link
US (6) US6943426B2 (enExample)
EP (2) EP2290695A1 (enExample)
JP (2) JP4756860B2 (enExample)
KR (3) KR101052667B1 (enExample)
CN (2) CN101355084B (enExample)
AU (1) AU2003262679A1 (enExample)
WO (1) WO2004017373A2 (enExample)

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AU2003262679A1 (en) 2004-03-03
EP1573822A4 (en) 2008-04-23
JP2011159991A (ja) 2011-08-18
KR101010426B1 (ko) 2011-01-21
US20080290452A1 (en) 2008-11-27
US20040032005A1 (en) 2004-02-19
EP2290695A1 (en) 2011-03-02
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AU2003262679A8 (en) 2004-03-03
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WO2004017373A9 (en) 2004-06-24
US7834416B2 (en) 2010-11-16
JP2005536060A (ja) 2005-11-24
JP5470311B2 (ja) 2014-04-16
WO2004017373A2 (en) 2004-02-26
KR20100118152A (ko) 2010-11-04
US20050269597A1 (en) 2005-12-08
US7489016B2 (en) 2009-02-10
US20080293214A1 (en) 2008-11-27
US8030152B2 (en) 2011-10-04
CN1698208A (zh) 2005-11-16
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US7176548B2 (en) 2007-02-13
EP1573822A2 (en) 2005-09-14
US7517748B2 (en) 2009-04-14
CN101355084A (zh) 2009-01-28
KR20100118153A (ko) 2010-11-04
JP4756860B2 (ja) 2011-08-24
KR101052660B1 (ko) 2011-07-28
KR20050054918A (ko) 2005-06-10
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