JP2005519481A5 - - Google Patents

Download PDF

Info

Publication number
JP2005519481A5
JP2005519481A5 JP2003575185A JP2003575185A JP2005519481A5 JP 2005519481 A5 JP2005519481 A5 JP 2005519481A5 JP 2003575185 A JP2003575185 A JP 2003575185A JP 2003575185 A JP2003575185 A JP 2003575185A JP 2005519481 A5 JP2005519481 A5 JP 2005519481A5
Authority
JP
Japan
Prior art keywords
low
dielectric surface
dielectric
supercritical
post
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003575185A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005519481A (ja
JP4246640B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2003/006813 external-priority patent/WO2003077032A1/en
Publication of JP2005519481A publication Critical patent/JP2005519481A/ja
Publication of JP2005519481A5 publication Critical patent/JP2005519481A5/ja
Application granted granted Critical
Publication of JP4246640B2 publication Critical patent/JP4246640B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003575185A 2002-03-04 2003-03-04 ウェハ処理において低誘電率材料を不動態化する方法 Expired - Fee Related JP4246640B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36191702P 2002-03-04 2002-03-04
US36905202P 2002-03-29 2002-03-29
PCT/US2003/006813 WO2003077032A1 (en) 2002-03-04 2003-03-04 Method of passivating of low dielectric materials in wafer processing

Publications (3)

Publication Number Publication Date
JP2005519481A JP2005519481A (ja) 2005-06-30
JP2005519481A5 true JP2005519481A5 (enExample) 2006-04-27
JP4246640B2 JP4246640B2 (ja) 2009-04-02

Family

ID=27807950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003575185A Expired - Fee Related JP4246640B2 (ja) 2002-03-04 2003-03-04 ウェハ処理において低誘電率材料を不動態化する方法

Country Status (6)

Country Link
US (1) US7270941B2 (enExample)
EP (1) EP1481284A4 (enExample)
JP (1) JP4246640B2 (enExample)
CN (1) CN1296771C (enExample)
AU (1) AU2003220039A1 (enExample)
WO (1) WO2003077032A1 (enExample)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7064070B2 (en) * 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
AU2001255656A1 (en) 2000-04-25 2001-11-07 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
CA2413592A1 (en) * 2000-06-23 2002-01-03 Nigel P. Hacker Method to restore hydrophobicity in dielectric films and materials
DE10162443A1 (de) * 2001-12-19 2003-07-03 Bayer Ag Verfahren zur Herstellung von dielektrischen Schichten unter Verwendung multifunktioneller Carbosilane
US7541200B1 (en) 2002-01-24 2009-06-02 Novellus Systems, Inc. Treatment of low k films with a silylating agent for damage repair
US20050227187A1 (en) * 2002-03-04 2005-10-13 Supercritical Systems Inc. Ionic fluid in supercritical fluid for semiconductor processing
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
CN1296771C (zh) 2002-03-04 2007-01-24 东京毅力科创株式会社 在晶片处理中低电介质材料的钝化方法
SG102047A1 (en) * 2002-05-02 2004-02-27 Dso Nat Lab Ladder-like silicone polymers
US20040050406A1 (en) * 2002-07-17 2004-03-18 Akshey Sehgal Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical
US7709371B2 (en) * 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
EP1588411A4 (en) * 2003-01-25 2008-10-01 Honeywell Int Inc REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS
US7208389B1 (en) 2003-03-31 2007-04-24 Novellus Systems, Inc. Method of porogen removal from porous low-k films using UV radiation
US7176144B1 (en) 2003-03-31 2007-02-13 Novellus Systems, Inc. Plasma detemplating and silanol capping of porous dielectric films
US7241704B1 (en) 2003-03-31 2007-07-10 Novellus Systems, Inc. Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups
US7265061B1 (en) 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
US20040231707A1 (en) * 2003-05-20 2004-11-25 Paul Schilling Decontamination of supercritical wafer processing equipment
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7138333B2 (en) * 2003-09-05 2006-11-21 Infineon Technologies Ag Process for sealing plasma-damaged, porous low-k materials
US8475666B2 (en) * 2004-09-15 2013-07-02 Honeywell International Inc. Method for making toughening agent materials
US7390537B1 (en) 2003-11-20 2008-06-24 Novellus Systems, Inc. Methods for producing low-k CDO films with low residual stress
US7141496B2 (en) * 2004-01-22 2006-11-28 Micell Technologies, Inc. Method of treating microelectronic substrates
US7381662B1 (en) 2004-03-11 2008-06-03 Novellus Systems, Inc. Methods for improving the cracking resistance of low-k dielectric materials
US7341761B1 (en) 2004-03-11 2008-03-11 Novellus Systems, Inc. Methods for producing low-k CDO films
US7781351B1 (en) 2004-04-07 2010-08-24 Novellus Systems, Inc. Methods for producing low-k carbon doped oxide films with low residual stress
US7253125B1 (en) 2004-04-16 2007-08-07 Novellus Systems, Inc. Method to improve mechanical strength of low-k dielectric film using modulated UV exposure
US7622400B1 (en) 2004-05-18 2009-11-24 Novellus Systems, Inc. Method for improving mechanical properties of low dielectric constant materials
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7223704B2 (en) * 2004-08-27 2007-05-29 Infineon Technologies Ag Repair of carbon depletion in low-k dielectric films
JP4903373B2 (ja) 2004-09-02 2012-03-28 ローム株式会社 半導体装置の製造方法
JP4903374B2 (ja) * 2004-09-02 2012-03-28 ローム株式会社 半導体装置の製造方法
US7326444B1 (en) 2004-09-14 2008-02-05 Novellus Systems, Inc. Methods for improving integration performance of low stress CDO films
KR20070060117A (ko) * 2004-09-15 2007-06-12 허니웰 인터내셔널 인코포레이티드 처리제 물질
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7387973B2 (en) * 2004-09-30 2008-06-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improving low-K dielectrics by supercritical fluid treatments
US9659769B1 (en) 2004-10-22 2017-05-23 Novellus Systems, Inc. Tensile dielectric films using UV curing
WO2006049595A1 (en) * 2004-10-27 2006-05-11 International Business Machines Corporation Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
US7163900B2 (en) * 2004-11-01 2007-01-16 Infineon Technologies Ag Using polydentate ligands for sealing pores in low-k dielectrics
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7695765B1 (en) 2004-11-12 2010-04-13 Novellus Systems, Inc. Methods for producing low-stress carbon-doped oxide films with improved integration properties
US7434590B2 (en) 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7140393B2 (en) 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7510982B1 (en) 2005-01-31 2009-03-31 Novellus Systems, Inc. Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles
US7166531B1 (en) 2005-01-31 2007-01-23 Novellus Systems, Inc. VLSI fabrication processes for introducing pores into dielectric materials
US20080207005A1 (en) * 2005-02-15 2008-08-28 Freescale Semiconductor, Inc. Wafer Cleaning After Via-Etching
US7435447B2 (en) 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US20060185694A1 (en) * 2005-02-23 2006-08-24 Richard Brown Rinsing step in supercritical processing
US20060185693A1 (en) * 2005-02-23 2006-08-24 Richard Brown Cleaning step in supercritical processing
US7678712B2 (en) * 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials
US7550075B2 (en) * 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US20060223899A1 (en) * 2005-03-30 2006-10-05 Hillman Joseph T Removal of porogens and porogen residues using supercritical CO2
US7399708B2 (en) 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7442636B2 (en) * 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US20060225769A1 (en) * 2005-03-30 2006-10-12 Gentaro Goshi Isothermal control of a process chamber
US20060219268A1 (en) * 2005-03-30 2006-10-05 Gunilla Jacobson Neutralization of systemic poisoning in wafer processing
JP2008538013A (ja) * 2005-04-15 2008-10-02 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 溶媒系中の自己組織化単分子膜を用いた高線量イオン注入フォトレジストの除去
US8889233B1 (en) 2005-04-26 2014-11-18 Novellus Systems, Inc. Method for reducing stress in porous dielectric films
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7524383B2 (en) 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
US20070000519A1 (en) * 2005-06-30 2007-01-04 Gunilla Jacobson Removal of residues for low-k dielectric materials in wafer processing
US20070054501A1 (en) * 2005-08-23 2007-03-08 Battelle Memorial Institute Process for modifying dielectric materials
US7892985B1 (en) 2005-11-15 2011-02-22 Novellus Systems, Inc. Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curing
TWI291714B (en) * 2005-12-09 2007-12-21 Ind Tech Res Inst Supercritical fluid washing method and system thereof
US7381644B1 (en) 2005-12-23 2008-06-03 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
JP5208405B2 (ja) * 2005-12-27 2013-06-12 東京エレクトロン株式会社 基板の処理方法及びプログラム
US7972954B2 (en) * 2006-01-24 2011-07-05 Infineon Technologies Ag Porous silicon dielectric
US20090045164A1 (en) * 2006-02-03 2009-02-19 Freescale Semiconductor, Inc. "universal" barrier cmp slurry for use with low dielectric constant interlayer dielectrics
WO2007095972A1 (en) * 2006-02-24 2007-08-30 Freescale Semiconductor, Inc. Semiconductordevice including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprissing multiple organic components for use in a semiconductor device
WO2007095973A1 (en) * 2006-02-24 2007-08-30 Freescale Semiconductor, Inc. Integrated system for semiconductor substrate processing using liquid phase metal deposition
US7324193B2 (en) * 2006-03-30 2008-01-29 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7619731B2 (en) * 2006-03-30 2009-11-17 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7576851B2 (en) * 2006-03-30 2009-08-18 Tokyo Electron Limited Creating a library for measuring a damaged structure formed on a wafer using optical metrology
US7923376B1 (en) 2006-03-30 2011-04-12 Novellus Systems, Inc. Method of reducing defects in PECVD TEOS films
US7623978B2 (en) * 2006-03-30 2009-11-24 Tokyo Electron Limited Damage assessment of a wafer using optical metrology
US7807219B2 (en) * 2006-06-27 2010-10-05 Lam Research Corporation Repairing and restoring strength of etch-damaged low-k dielectric materials
JP5138291B2 (ja) * 2006-07-05 2013-02-06 東京エレクトロン株式会社 アモルファスカーボン膜の後処理方法およびそれを用いた半導体装置の製造方法
JP4977508B2 (ja) 2007-03-26 2012-07-18 アイメック ダメージの入った多孔性誘電体の処理方法
WO2009150021A2 (en) * 2008-05-26 2009-12-17 Basf Se Method of making porous materials and porous materials prepared thereof
JP5764788B2 (ja) * 2008-08-07 2015-08-19 株式会社ユーテック 反応装置及び反応方法
JP5663160B2 (ja) * 2009-09-28 2015-02-04 東京応化工業株式会社 表面処理剤及び表面処理方法
JP5782279B2 (ja) * 2011-01-20 2015-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5611884B2 (ja) * 2011-04-14 2014-10-22 東京エレクトロン株式会社 エッチング方法、エッチング装置および記憶媒体
CN103145346A (zh) * 2011-12-06 2013-06-12 中国科学院过程工程研究所 一种改变光滑玻璃表面润湿性能的方法及其对玻璃微通道表面改性的应用
US9460997B2 (en) 2013-12-31 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for semiconductor devices
JP6875811B2 (ja) * 2016-09-16 2021-05-26 株式会社Ｓｃｒｅｅｎホールディングス パターン倒壊回復方法、基板処理方法および基板処理装置
KR101828437B1 (ko) * 2017-04-06 2018-03-29 주식회사 디엔에스 실리콘 질화막 식각용 조성물.
KR102783987B1 (ko) 2018-08-03 2025-03-21 삼성전자주식회사 나노결정질 그래핀의 형성방법 및 이를 포함하는 소자
US11993844B2 (en) * 2019-04-24 2024-05-28 The Regents Of The University Of California Passivation of silicon dioxide defects for atomic layer deposition
KR102300931B1 (ko) 2019-08-14 2021-09-13 세메스 주식회사 기판 처리 방법 및 장치
JP7493325B2 (ja) * 2019-11-25 2024-05-31 東京エレクトロン株式会社 基板処理装置
CN114975079A (zh) * 2022-03-31 2022-08-30 湖北大学 一种超临界流体处理氧化铌选通管的方法

Family Cites Families (250)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2439689A (en) 1948-04-13 Method of rendering glass
US2617719A (en) 1950-12-29 1952-11-11 Stanolind Oil & Gas Co Cleaning porous media
US2993449A (en) 1959-03-09 1961-07-25 Hydratomic Engineering Corp Motor-pump
US3135211A (en) 1960-09-28 1964-06-02 Integral Motor Pump Corp Motor and pump assembly
DE1965723B2 (de) 1969-01-06 1972-12-07 The Hobart Mfg Co , Troy, Ohio (V St A) Hydraulische steuereinrichtung fuer waschmaschinen
US3642020A (en) 1969-11-17 1972-02-15 Cameron Iron Works Inc Pressure operated{13 positive displacement shuttle valve
FR2128426B1 (enExample) 1971-03-02 1980-03-07 Cnen
US3890176A (en) 1972-08-18 1975-06-17 Gen Electric Method for removing photoresist from substrate
US4341592A (en) 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4219333A (en) 1978-07-03 1980-08-26 Harris Robert D Carbonated cleaning solution
US4349415A (en) 1979-09-28 1982-09-14 Critical Fluid Systems, Inc. Process for separating organic liquid solutes from their solvent mixtures
JPS5919267A (ja) 1982-07-20 1984-01-31 Matsushita Electric Ind Co Ltd 自動選曲プレ−ヤの曲間検出回路
US4475993A (en) 1983-08-15 1984-10-09 The United States Of America As Represented By The United States Department Of Energy Extraction of trace metals from fly ash
JPS60192333A (ja) 1984-03-13 1985-09-30 Hitachi Ltd 有機塗布硬化膜の除去方法
US4877530A (en) 1984-04-25 1989-10-31 Cf Systems Corporation Liquid CO2 /cosolvent extraction
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4925790A (en) 1985-08-30 1990-05-15 The Regents Of The University Of California Method of producing products by enzyme-catalyzed reactions in supercritical fluids
US4730630A (en) 1986-10-27 1988-03-15 White Consolidated Industries, Inc. Dishwasher with power filtered rinse
US4759917A (en) 1987-02-24 1988-07-26 Monsanto Company Oxidative dissolution of gallium arsenide and separation of gallium from arsenic
US4879004A (en) 1987-05-07 1989-11-07 Micafil Ag Process for the extraction of oil or polychlorinated biphenyl from electrical parts through the use of solvents and for distillation of the solvents
DE3725565A1 (de) 1987-08-01 1989-02-16 Peter Weil Verfahren und anlage zum entlacken von gegenstaenden mit einem tauchbehaelter mit loesungsmittel
US5105556A (en) 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
US4838476A (en) 1987-11-12 1989-06-13 Fluocon Technologies Inc. Vapour phase treatment process and apparatus
US4933404A (en) 1987-11-27 1990-06-12 Battelle Memorial Institute Processes for microemulsion polymerization employing novel microemulsion systems
EP0343233B1 (en) 1987-11-27 1994-02-02 Battelle Memorial Institute Supercritical fluid reverse micelle separation
US5266205A (en) 1988-02-04 1993-11-30 Battelle Memorial Institute Supercritical fluid reverse micelle separation
JP2663483B2 (ja) 1988-02-29 1997-10-15 勝 西川 レジストパターン形成方法
US5185296A (en) 1988-07-26 1993-02-09 Matsushita Electric Industrial Co., Ltd. Method for forming a dielectric thin film or its pattern of high accuracy on a substrate
US5013366A (en) 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
EP0409972B1 (en) 1989-02-16 1992-10-21 PAWLISZYN, Janusz B. Apparatus and method for delivering supercritical fluid
US5068040A (en) 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
US5288333A (en) 1989-05-06 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefore
US4923828A (en) 1989-07-07 1990-05-08 Eastman Kodak Company Gaseous cleaning method for silicon devices
JP2888253B2 (ja) 1989-07-20 1999-05-10 富士通株式会社 化学気相成長法およびその実施のための装置
US5213619A (en) 1989-11-30 1993-05-25 Jackson David P Processes for cleaning, sterilizing, and implanting materials using high energy dense fluids
US5196134A (en) 1989-12-20 1993-03-23 Hughes Aircraft Company Peroxide composition for removing organic contaminants and method of using same
US5269850A (en) 1989-12-20 1993-12-14 Hughes Aircraft Company Method of removing organic flux using peroxide composition
US5370741A (en) 1990-05-15 1994-12-06 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous chemical vapors
US5071485A (en) 1990-09-11 1991-12-10 Fusion Systems Corporation Method for photoresist stripping using reverse flow
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
JP2782560B2 (ja) 1990-12-12 1998-08-06 富士写真フイルム株式会社 安定化処理液及びハロゲン化銀カラー写真感光材料の処理方法
US5306350A (en) 1990-12-21 1994-04-26 Union Carbide Chemicals & Plastics Technology Corporation Methods for cleaning apparatus using compressed fluids
CA2059841A1 (en) 1991-01-24 1992-07-25 Ichiro Hayashida Surface treating solutions and cleaning method
US5185058A (en) 1991-01-29 1993-02-09 Micron Technology, Inc. Process for etching semiconductor devices
US5201960A (en) 1991-02-04 1993-04-13 Applied Photonics Research, Inc. Method for removing photoresist and other adherent materials from substrates
AT395951B (de) 1991-02-19 1993-04-26 Union Ind Compr Gase Gmbh Reinigung von werkstuecken mit organischen rueckstaenden
EP0514337B1 (de) 1991-05-17 1995-11-22 Ciba-Geigy Ag Verfahren zum Färben von hydrophobem Textilmaterial mit Dispersionsfarbstoffen aus überkritischem CO2
US5274129A (en) 1991-06-12 1993-12-28 Idaho Research Foundation, Inc. Hydroxamic acid crown ethers
US5225173A (en) 1991-06-12 1993-07-06 Idaho Research Foundation, Inc. Methods and devices for the separation of radioactive rare earth metal isotopes from their alkaline earth metal precursors
US5356538A (en) 1991-06-12 1994-10-18 Idaho Research Foundation, Inc. Supercritical fluid extraction
US5965025A (en) 1991-06-12 1999-10-12 Idaho Research Foundation, Inc. Fluid extraction
US5730874A (en) 1991-06-12 1998-03-24 Idaho Research Foundation, Inc. Extraction of metals using supercritical fluid and chelate forming legand
US5279615A (en) 1991-06-14 1994-01-18 The Clorox Company Method and composition using densified carbon dioxide and cleaning adjunct to clean fabrics
US5174917A (en) 1991-07-19 1992-12-29 Monsanto Company Compositions containing n-ethyl hydroxamic acid chelants
US5320742A (en) 1991-08-15 1994-06-14 Mobil Oil Corporation Gasoline upgrading process
US5431843A (en) 1991-09-04 1995-07-11 The Clorox Company Cleaning through perhydrolysis conducted in dense fluid medium
GB2259525B (en) 1991-09-11 1995-06-28 Ciba Geigy Ag Process for dyeing cellulosic textile material with disperse dyes
US5213622A (en) 1991-10-11 1993-05-25 Air Products And Chemicals, Inc. Cleaning agents for fabricating integrated circuits and a process for using the same
EP0543779A1 (de) 1991-11-20 1993-05-26 Ciba-Geigy Ag Verfahren zum optischen Aufhellen von hydrophobem Textilmaterial mit dispersen optischen Aufhellern in überkritischem CO2
KR930019861A (ko) 1991-12-12 1993-10-19 완다 케이. 덴슨-로우 조밀상 기체를 이용한 코팅 방법
US5550211A (en) 1991-12-18 1996-08-27 Schering Corporation Method for removing residual additives from elastomeric articles
DE4200352A1 (de) 1992-01-09 1993-08-19 Deutsches Textilforschzentrum Verfahren zum aufbringen von substanzen auf fasermaterialien und textile substrate
US5474812A (en) 1992-01-10 1995-12-12 Amann & Sohne Gmbh & Co. Method for the application of a lubricant on a sewing yarn
DE4200498A1 (de) 1992-01-10 1993-07-15 Amann & Soehne Verfahren zum auftragen einer avivage
US5688879A (en) 1992-03-27 1997-11-18 The University Of North Carolina At Chapel Hill Method of making fluoropolymers
DE69334213T2 (de) 1992-03-27 2009-06-18 University Of North Carolina At Chapel Hill Verfahren zur Herstellung von Fluoropolymeren
KR0170421B1 (ko) * 1992-04-16 1999-03-30 이노우에 아키라 스핀 드라이어
US5313965A (en) 1992-06-01 1994-05-24 Hughes Aircraft Company Continuous operation supercritical fluid treatment process and system
JPH0613361A (ja) 1992-06-26 1994-01-21 Tokyo Electron Ltd 処理装置
US5401322A (en) 1992-06-30 1995-03-28 Southwest Research Institute Apparatus and method for cleaning articles utilizing supercritical and near supercritical fluids
US6165282A (en) 1992-06-30 2000-12-26 Southwest Research Institute Method for contaminant removal using natural convection flow and changes in solubility concentration by temperature
US5352327A (en) 1992-07-10 1994-10-04 Harris Corporation Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer
US5370742A (en) 1992-07-13 1994-12-06 The Clorox Company Liquid/supercritical cleaning with decreased polymer damage
US5285352A (en) 1992-07-15 1994-02-08 Motorola, Inc. Pad array semiconductor device with thermal conductor and process for making the same
US5456759A (en) 1992-08-10 1995-10-10 Hughes Aircraft Company Method using megasonic energy in liquefied gases
US5316591A (en) 1992-08-10 1994-05-31 Hughes Aircraft Company Cleaning by cavitation in liquefied gas
US5261965A (en) 1992-08-28 1993-11-16 Texas Instruments Incorporated Semiconductor wafer cleaning using condensed-phase processing
EP0591595A1 (en) 1992-10-08 1994-04-13 International Business Machines Corporation Molecular recording/reproducing method and recording medium
US5294261A (en) 1992-11-02 1994-03-15 Air Products And Chemicals, Inc. Surface cleaning using an argon or nitrogen aerosol
US5328722A (en) 1992-11-06 1994-07-12 Applied Materials, Inc. Metal chemical vapor deposition process using a shadow ring
US5514220A (en) 1992-12-09 1996-05-07 Wetmore; Paula M. Pressure pulse cleaning
WO1994014240A1 (en) 1992-12-11 1994-06-23 The Regents Of The University Of California Microelectromechanical signal processors
JP3356480B2 (ja) 1993-03-18 2002-12-16 株式会社日本触媒 無漏洩ポンプ
NZ260144A (en) 1993-04-12 1995-10-26 Colgate Palmolive Co Cleaning composition; contains three liquid phases which merge at a tricritical point; use for removing tar or grease from articles
US5403665A (en) 1993-06-18 1995-04-04 Regents Of The University Of California Method of applying a monolayer lubricant to micromachines
US5312882A (en) 1993-07-30 1994-05-17 The University Of North Carolina At Chapel Hill Heterogeneous polymerization in carbon dioxide
JP3338134B2 (ja) 1993-08-02 2002-10-28 株式会社東芝 半導体ウエハ処理方法
US5364497A (en) 1993-08-04 1994-11-15 Analog Devices, Inc. Method for fabricating microstructures using temporary bridges
US5370740A (en) 1993-10-01 1994-12-06 Hughes Aircraft Company Chemical decomposition by sonication in liquid carbon dioxide
US5656097A (en) 1993-10-20 1997-08-12 Verteq, Inc. Semiconductor wafer cleaning system
US5417768A (en) 1993-12-14 1995-05-23 Autoclave Engineers, Inc. Method of cleaning workpiece with solvent and then with liquid carbon dioxide
TW274630B (enExample) 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
US5641887A (en) 1994-04-01 1997-06-24 University Of Pittsburgh Extraction of metals in carbon dioxide and chelating agents therefor
US5872257A (en) 1994-04-01 1999-02-16 University Of Pittsburgh Further extractions of metals in carbon dioxide and chelating agents therefor
DE69523208T2 (de) 1994-04-08 2002-06-27 Texas Instruments Inc., Dallas Verfahren zur Reinigung von Halbleiterscheiben mittels verflüssigter Gase
JP3320549B2 (ja) 1994-04-26 2002-09-03 岩手東芝エレクトロニクス株式会社 被膜除去方法および被膜除去剤
US5467492A (en) 1994-04-29 1995-11-21 Hughes Aircraft Company Dry-cleaning of garments using liquid carbon dioxide under agitation as cleaning medium
US5470802A (en) * 1994-05-20 1995-11-28 Texas Instruments Incorporated Method of making a semiconductor device using a low dielectric constant material
KR0137841B1 (ko) 1994-06-07 1998-04-27 문정환 식각잔류물 제거방법
US5482564A (en) 1994-06-21 1996-01-09 Texas Instruments Incorporated Method of unsticking components of micro-mechanical devices
US5504042A (en) 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
US5637151A (en) 1994-06-27 1997-06-10 Siemens Components, Inc. Method for reducing metal contamination of silicon wafers during semiconductor manufacturing
US5522938A (en) 1994-08-08 1996-06-04 Texas Instruments Incorporated Particle removal in supercritical liquids using single frequency acoustic waves
US6262510B1 (en) 1994-09-22 2001-07-17 Iancu Lungu Electronically switched reluctance motor
US5501761A (en) 1994-10-18 1996-03-26 At&T Corp. Method for stripping conformal coatings from circuit boards
US5479727A (en) * 1994-10-25 1996-01-02 Air Products And Chemicals, Inc. Moisture removal and passivation of surfaces
EP0711864B1 (en) 1994-11-08 2001-06-13 Raytheon Company Dry-cleaning of garments using gas-jet agitation
JPH08186140A (ja) 1994-12-27 1996-07-16 Toshiba Corp 樹脂封止型半導体装置の製造方法および製造装置
US5629918A (en) 1995-01-20 1997-05-13 The Regents Of The University Of California Electromagnetically actuated micromachined flap
DE69610652T2 (de) 1995-01-26 2001-05-10 Texas Instruments Inc., Dallas Verfahren zur Entfernung von Oberflächenkontamination
JPH08222508A (ja) 1995-02-15 1996-08-30 Fuji Photo Film Co Ltd 感光性組成物のパターン形成方法
EP0727711A3 (en) 1995-02-17 1997-04-09 Ocg Microelectronic Materials Photoresist compositions containing supercritical fluid fractionated polymeric resin binders
JP3277114B2 (ja) 1995-02-17 2002-04-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 陰画調レジスト像の作製方法
DE19506404C1 (de) 1995-02-23 1996-03-14 Siemens Ag Verfahren zum Freiätzen (Separieren) und Trocknen mikromechanischer Komponenten
US5683977A (en) 1995-03-06 1997-11-04 Lever Brothers Company, Division Of Conopco, Inc. Dry cleaning system using densified carbon dioxide and a surfactant adjunct
WO1996027704A1 (en) 1995-03-06 1996-09-12 Unilever N.V. Dry cleaning system using densified carbon dioxide and a surfactant adjunct
US5676705A (en) 1995-03-06 1997-10-14 Lever Brothers Company, Division Of Conopco, Inc. Method of dry cleaning fabrics using densified carbon dioxide
US5738976A (en) * 1995-03-16 1998-04-14 Shin-Etsu Chemical Co., Ltd. Photo-curable organopolysiloxane composition and a method for producing a (meth) acryloyloxyl group-containing organopolysiloxane used therein
US5681398A (en) 1995-03-17 1997-10-28 Purex Co., Ltd. Silicone wafer cleaning method
JPH08264500A (ja) 1995-03-27 1996-10-11 Sony Corp 基板の洗浄方法
JPH08330266A (ja) 1995-05-31 1996-12-13 Texas Instr Inc <Ti> 半導体装置等の表面を浄化し、処理する方法
WO1997000442A1 (en) 1995-06-16 1997-01-03 The University Of Washington Microfabricated differential extraction device and method
US6454945B1 (en) 1995-06-16 2002-09-24 University Of Washington Microfabricated devices and methods
US6239038B1 (en) 1995-10-13 2001-05-29 Ziying Wen Method for chemical processing semiconductor wafers
US5783082A (en) 1995-11-03 1998-07-21 University Of North Carolina Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants
US5783495A (en) 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
US6380105B1 (en) 1996-11-14 2002-04-30 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
US6037277A (en) 1995-11-16 2000-03-14 Texas Instruments Incorporated Limited-volume apparatus and method for forming thin film aerogels on semiconductor substrates
US5807607A (en) 1995-11-16 1998-09-15 Texas Instruments Incorporated Polyol-based method for forming thin film aerogels on semiconductor substrates
US5736425A (en) 1995-11-16 1998-04-07 Texas Instruments Incorporated Glycol-based method for forming a thin-film nanoporous dielectric
US5955140A (en) 1995-11-16 1999-09-21 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
US5679169A (en) 1995-12-19 1997-10-21 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
US5992680A (en) 1996-01-29 1999-11-30 Smith; Philip E. Slidable sealing lid apparatus for subsurface storage containers
US6232417B1 (en) 1996-03-07 2001-05-15 The B. F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
US5726211A (en) 1996-03-21 1998-03-10 International Business Machines Corporation Process for making a foamed elastometric polymer
US5804607A (en) 1996-03-21 1998-09-08 International Business Machines Corporation Process for making a foamed elastomeric polymer
US5766367A (en) 1996-05-14 1998-06-16 Sandia Corporation Method for preventing micromechanical structures from adhering to another object
US5954101A (en) 1996-06-14 1999-09-21 Mve, Inc. Mobile delivery and storage system for cryogenic fluids
US5868856A (en) 1996-07-25 1999-02-09 Texas Instruments Incorporated Method for removing inorganic contamination by chemical derivitization and extraction
US5868862A (en) 1996-08-01 1999-02-09 Texas Instruments Incorporated Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media
US6270948B1 (en) 1996-08-22 2001-08-07 Kabushiki Kaisha Toshiba Method of forming pattern
US5798438A (en) 1996-09-09 1998-08-25 University Of Massachusetts Polymers with increased order
US5881577A (en) 1996-09-09 1999-03-16 Air Liquide America Corporation Pressure-swing absorption based cleaning methods and systems
US5908510A (en) 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US5797719A (en) 1996-10-30 1998-08-25 Supercritical Fluid Technologies, Inc. Precision high pressure control assembly
US5888050A (en) 1996-10-30 1999-03-30 Supercritical Fluid Technologies, Inc. Precision high pressure control assembly
US5725987A (en) 1996-11-01 1998-03-10 Xerox Corporation Supercritical processes
US5714299A (en) 1996-11-04 1998-02-03 Xerox Corporation Processes for toner additives with liquid carbon dioxide
AU6135298A (en) 1997-01-27 1998-08-26 California Institute Of Technology Mems electrospray nozzle for mass spectroscopy
US5896870A (en) 1997-03-11 1999-04-27 International Business Machines Corporation Method of removing slurry particles
US6309975B1 (en) 1997-03-14 2001-10-30 Micron Technology, Inc. Methods of making implanted structures
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6500605B1 (en) * 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6114044A (en) 1997-05-30 2000-09-05 Regents Of The University Of California Method of drying passivated micromachines by dewetting from a liquid-based process
US6344243B1 (en) 1997-05-30 2002-02-05 Micell Technologies, Inc. Surface treatment
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US5893756A (en) 1997-08-26 1999-04-13 Lsi Logic Corporation Use of ethylene glycol as a corrosion inhibitor during cleaning after metal chemical mechanical polishing
US6270531B1 (en) 1997-08-29 2001-08-07 Micell Technologies, Inc. End functionalized polysiloxane surfactants in carbon dioxide formulations
US6099619A (en) 1997-10-09 2000-08-08 Uop Llc Purification of carbon dioxide
US5872061A (en) 1997-10-27 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etch method for forming residue free fluorine containing plasma etched layers
US6005226A (en) 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
DE69839935D1 (de) 1997-11-25 2008-10-09 Nec Lcd Technologies Ltd Aktiv-Matrix-Flüssigkristallanzeige und deren Herstellungsverfahren
US5904737A (en) 1997-11-26 1999-05-18 Mve, Inc. Carbon dioxide dry cleaning system
US6067728A (en) 1998-02-13 2000-05-30 G.T. Equipment Technologies, Inc. Supercritical phase wafer drying/cleaning system
US6100198A (en) 1998-02-27 2000-08-08 Micron Technology, Inc. Post-planarization, pre-oxide removal ozone treatment
KR100287173B1 (ko) 1998-03-13 2001-06-01 윤종용 포토레지스트제거방법및이들을이용한반도체장치의제조방법
US6085762A (en) 1998-03-30 2000-07-11 The Regents Of The University Of California Apparatus and method for providing pulsed fluids
WO1999049998A1 (en) 1998-03-30 1999-10-07 The Regents Of The University Of California Composition and method for removing photoresist materials from electronic components
KR100452542B1 (ko) 1998-04-14 2004-10-12 가부시끼가이샤가이죠 세정물 건조장치 및 건조방법
ATE436043T1 (de) 1998-05-18 2009-07-15 Mallinckrodt Baker Inc Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate
US6200943B1 (en) 1998-05-28 2001-03-13 Micell Technologies, Inc. Combination surfactant systems for use in carbon dioxide-based cleaning formulations
US6465370B1 (en) * 1998-06-26 2002-10-15 Infineon Technologies Ag Low leakage, low capacitance isolation material
US6021791A (en) 1998-06-29 2000-02-08 Speedfam-Ipec Corporation Method and apparatus for immersion cleaning of semiconductor devices
US6017820A (en) 1998-07-17 2000-01-25 Cutek Research, Inc. Integrated vacuum and plating cluster system
US6780765B2 (en) 1998-08-14 2004-08-24 Avery N. Goldstein Integrated circuit trenched features and method of producing same
JP3248492B2 (ja) 1998-08-14 2002-01-21 日本電気株式会社 半導体装置及びその製造方法
US6242165B1 (en) 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same
US6358673B1 (en) 1998-09-09 2002-03-19 Nippon Telegraph And Telephone Corporation Pattern formation method and apparatus
US6492277B1 (en) 1999-09-10 2002-12-10 Hitachi, Ltd. Specimen surface processing method and apparatus
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US6110232A (en) 1998-10-01 2000-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for preventing corrosion in load-lock chambers
US6232238B1 (en) 1999-02-08 2001-05-15 United Microelectronics Corp. Method for preventing corrosion of bonding pad on a surface of a semiconductor wafer
KR100421034B1 (ko) 1999-04-21 2004-03-04 삼성전자주식회사 레지스트 조성물과 이를 이용한 미세패턴 형성방법
KR100290852B1 (ko) 1999-04-29 2001-05-15 구자홍 에칭 방법
US7044143B2 (en) 1999-05-14 2006-05-16 Micell Technologies, Inc. Detergent injection systems and methods for carbon dioxide microelectronic substrate processing systems
US6128830A (en) 1999-05-15 2000-10-10 Dean Bettcher Apparatus and method for drying solid articles
US6245849B1 (en) 1999-06-02 2001-06-12 Sandia Corporation Fabrication of ceramic microstructures from polymer compositions containing ceramic nanoparticles
US6436824B1 (en) * 1999-07-02 2002-08-20 Chartered Semiconductor Manufacturing Ltd. Low dielectric constant materials for copper damascene
US6602349B2 (en) 1999-08-05 2003-08-05 S.C. Fluids, Inc. Supercritical fluid cleaning process for precision surfaces
US6712081B1 (en) * 1999-08-31 2004-03-30 Kobe Steel, Ltd. Pressure processing device
US6251250B1 (en) 1999-09-03 2001-06-26 Arthur Keigler Method of and apparatus for controlling fluid flow and electric fields involved in the electroplating of substantially flat workpieces and the like and more generally controlling fluid flow in the processing of other work piece surfaces as well
US6228563B1 (en) 1999-09-17 2001-05-08 Gasonics International Corporation Method and apparatus for removing post-etch residues and other adherent matrices
US6858089B2 (en) * 1999-10-29 2005-02-22 Paul P. Castrucci Apparatus and method for semiconductor wafer cleaning
US6286231B1 (en) 2000-01-12 2001-09-11 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying
US6361696B1 (en) 2000-01-19 2002-03-26 Aeronex, Inc. Self-regenerative process for contaminant removal from liquid and supercritical CO2 fluid streams
WO2001068279A2 (en) 2000-03-13 2001-09-20 The Deflex Llc Dense fluid cleaning centrifugal phase shifting separation process and apparatus
JP2001264810A (ja) 2000-03-21 2001-09-26 Nec Kagoshima Ltd アクティブマトリクス基板及びその製造方法
JP2001291713A (ja) 2000-04-07 2001-10-19 Canon Sales Co Inc 成膜方法及び半導体装置
US6558475B1 (en) 2000-04-10 2003-05-06 International Business Machines Corporation Process for cleaning a workpiece using supercritical carbon dioxide
AU2001255656A1 (en) 2000-04-25 2001-11-07 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US6492090B2 (en) 2000-04-28 2002-12-10 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
CA2413592A1 (en) * 2000-06-23 2002-01-03 Nigel P. Hacker Method to restore hydrophobicity in dielectric films and materials
US6319858B1 (en) 2000-07-11 2001-11-20 Nano-Architect Research Corporation Methods for reducing a dielectric constant of a dielectric film and for forming a low dielectric constant porous film
AU2001279136A1 (en) 2000-07-31 2002-02-13 The Deflex Corporation Near critical and supercritical ozone substrate treatment and apparatus for same
WO2002009894A2 (en) 2000-08-01 2002-02-07 The Deflex Llc Gas-vapor cleaning method and system therefor
US6486078B1 (en) * 2000-08-22 2002-11-26 Advanced Micro Devices, Inc. Super critical drying of low k materials
AU2001288402A1 (en) 2000-08-23 2002-03-04 Deflex Llc Surface cleaning and modification processes, methods and apparatus using physicochemically modified dense fluid sprays
US6413852B1 (en) 2000-08-31 2002-07-02 International Business Machines Corporation Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material
US6777312B2 (en) 2000-11-02 2004-08-17 California Institute Of Technology Wafer-level transfer of membranes in semiconductor processing
US6623355B2 (en) 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6673521B2 (en) * 2000-12-12 2004-01-06 Lnternational Business Machines Corporation Supercritical fluid(SCF) silylation process
US6576138B2 (en) 2000-12-14 2003-06-10 Praxair Technology, Inc. Method for purifying semiconductor gases
US6656666B2 (en) 2000-12-22 2003-12-02 International Business Machines Corporation Topcoat process to prevent image collapse
US6425956B1 (en) 2001-01-05 2002-07-30 International Business Machines Corporation Process for removing chemical mechanical polishing residual slurry
US20020117391A1 (en) 2001-01-31 2002-08-29 Beam Craig A. High purity CO2 and BTEX recovery
JP2002237481A (ja) 2001-02-09 2002-08-23 Kobe Steel Ltd 微細構造体の洗浄方法
US6669916B2 (en) 2001-02-12 2003-12-30 Praxair Technology, Inc. Method and apparatus for purifying carbon dioxide feed streams
US6905555B2 (en) 2001-02-15 2005-06-14 Micell Technologies, Inc. Methods for transferring supercritical fluids in microelectronic and other industrial processes
US6596093B2 (en) 2001-02-15 2003-07-22 Micell Technologies, Inc. Methods for cleaning microelectronic structures with cyclical phase modulation
US6562146B1 (en) 2001-02-15 2003-05-13 Micell Technologies, Inc. Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide
US6641678B2 (en) 2001-02-15 2003-11-04 Micell Technologies, Inc. Methods for cleaning microelectronic structures with aqueous carbon dioxide systems
US6613157B2 (en) 2001-02-15 2003-09-02 Micell Technologies, Inc. Methods for removing particles from microelectronic structures
US6635565B2 (en) 2001-02-20 2003-10-21 United Microelectronics Corp. Method of cleaning a dual damascene structure
US6451510B1 (en) 2001-02-21 2002-09-17 International Business Machines Corporation Developer/rinse formulation to prevent image collapse in resist
US6685903B2 (en) 2001-03-01 2004-02-03 Praxair Technology, Inc. Method of purifying and recycling argon
US6503837B2 (en) 2001-03-29 2003-01-07 Macronix International Co. Ltd. Method of rinsing residual etching reactants/products on a semiconductor wafer
US6958123B2 (en) 2001-06-15 2005-10-25 Reflectivity, Inc Method for removing a sacrificial material with a compressed fluid
US6890855B2 (en) 2001-06-27 2005-05-10 International Business Machines Corporation Process of removing residue material from a precision surface
US6509136B1 (en) 2001-06-27 2003-01-21 International Business Machines Corporation Process of drying a cast polymeric film disposed on a workpiece
US6979654B2 (en) 2001-07-03 2005-12-27 United Microelectronics Corp. Method of avoiding dielectric layer deterioation with a low dielectric constant during a stripping process
US6583067B2 (en) 2001-07-03 2003-06-24 United Microelectronics Corp. Method of avoiding dielectric layer deterioration with a low dielectric constant
US6763840B2 (en) 2001-09-14 2004-07-20 Micell Technologies, Inc. Method and apparatus for cleaning substrates using liquid carbon dioxide
JP3978023B2 (ja) 2001-12-03 2007-09-19 株式会社神戸製鋼所 高圧処理方法
US7326673B2 (en) 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
JP2003224099A (ja) 2002-01-30 2003-08-08 Sony Corp 表面処理方法
US6848458B1 (en) 2002-02-05 2005-02-01 Novellus Systems, Inc. Apparatus and methods for processing semiconductor substrates using supercritical fluids
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
CN1296771C (zh) 2002-03-04 2007-01-24 东京毅力科创株式会社 在晶片处理中低电介质材料的钝化方法
US7169540B2 (en) 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US6764552B1 (en) 2002-04-18 2004-07-20 Novellus Systems, Inc. Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
US6669785B2 (en) 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US20030217764A1 (en) 2002-05-23 2003-11-27 Kaoru Masuda Process and composition for removing residues from the microstructure of an object
US20040011386A1 (en) 2002-07-17 2004-01-22 Scp Global Technologies Inc. Composition and method for removing photoresist and/or resist residue using supercritical fluids
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US20040177867A1 (en) 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
US20040112409A1 (en) 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
US6875285B2 (en) 2003-04-24 2005-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for dampening high pressure impact on porous materials
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing

Similar Documents

Publication Publication Date Title
JP2005519481A5 (enExample)
CN1296771C (zh) 在晶片处理中低电介质材料的钝化方法
KR101827020B1 (ko) 고애스펙트비 나노구조들의 패턴 붕괴를 저감시키는 방법
US7807213B2 (en) Method and system for characterizing porous materials
US7005390B2 (en) Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
US20040018452A1 (en) Method of treatment of porous dielectric films to reduce damage during cleaning
US7122484B2 (en) Process for removing organic materials during formation of a metal interconnect
JP2001077196A (ja) 半導体装置の製造方法
WO2003081665A1 (fr) Procede de production de dispositif semi-conducteur et dispositif semi-conducteur
EP1427004A2 (en) Insulation film
CN1681080A (zh) 利用超临界流体制造微电子器件的方法
US7056824B2 (en) Electronic device manufacture
US11081350B2 (en) Semiconductor device and method of manufacture
JP5425514B2 (ja) 微細パターン形成方法
CN100335969C (zh) 减少多孔介电薄膜清洗期间损伤的处理方法
JP2008177540A (ja) 多孔性誘電材料の誘電特性をレストアする方法および組成物
JP4766267B2 (ja) 膜およびその形成方法、ならびに半導体装置
Broussous et al. Porosity and structure evolution of a SiOCH low k material during post-etch cleaning process
JP3918933B2 (ja) 化学機械研磨ストッパー、その製造方法および化学機械研磨方法
WO2009096480A1 (ja) ハードマスク用除去組成物および除去方法
JP4883256B2 (ja) 表面疎水化用組成物、表面疎水化方法、半導体装置およびその製造方法
TW200305213A (en) Method of passivating of low dielectric materials in wafer processing
JP2003297834A (ja) 半導体装置の製造方法
JP2004277463A (ja) 低誘電率膜用組成物
JP2006201361A (ja) シリルフェニレン系ポリマーを含有する中間層形成用組成物およびそれを用いたパターン形成方法