JP2005510881A - オン抵抗が向上されたトレンチ金属酸化膜半導体電界効果トランジスタデバイス - Google Patents

オン抵抗が向上されたトレンチ金属酸化膜半導体電界効果トランジスタデバイス Download PDF

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Publication number
JP2005510881A
JP2005510881A JP2003548314A JP2003548314A JP2005510881A JP 2005510881 A JP2005510881 A JP 2005510881A JP 2003548314 A JP2003548314 A JP 2003548314A JP 2003548314 A JP2003548314 A JP 2003548314A JP 2005510881 A JP2005510881 A JP 2005510881A
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trench
effect transistor
field effect
oxide semiconductor
metal oxide
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JP2005510881A5 (https=
Inventor
フシエフ、フュー−イウアン
ソー、クーン、チョング
アマトー、ジョン、イー．
ツイ、ヤン、マン
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ゼネラル セミコンダクター，インク．
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Publication of JP2005510881A publication Critical patent/JP2005510881A/ja
Publication of JP2005510881A5 publication Critical patent/JP2005510881A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/667—Vertical DMOS [VDMOS] FETs having substrates comprising insulating layers, e.g. SOI-VDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H10P32/172—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material being crystalline silicon carbide

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2003548314A 2001-11-21 2002-11-20 オン抵抗が向上されたトレンチ金属酸化膜半導体電界効果トランジスタデバイス Pending JP2005510881A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/999,116 US6657254B2 (en) 2001-11-21 2001-11-21 Trench MOSFET device with improved on-resistance
PCT/US2002/037265 WO2003046997A1 (en) 2001-11-21 2002-11-20 Trench mosfet device with improved on-resistance

Publications (2)

Publication Number Publication Date
JP2005510881A true JP2005510881A (ja) 2005-04-21
JP2005510881A5 JP2005510881A5 (https=) 2006-01-19

Family

ID=25545922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003548314A Pending JP2005510881A (ja) 2001-11-21 2002-11-20 オン抵抗が向上されたトレンチ金属酸化膜半導体電界効果トランジスタデバイス

Country Status (8)

Country Link
US (2) US6657254B2 (https=)
EP (1) EP1454360A4 (https=)
JP (1) JP2005510881A (https=)
KR (1) KR100957584B1 (https=)
CN (1) CN100474616C (https=)
AU (1) AU2002348308A1 (https=)
TW (1) TW200300593A (https=)
WO (1) WO2003046997A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016130692A (ja) * 2015-01-14 2016-07-21 ソフトバンク株式会社 移動通信システムにおけるドップラースペクトルを用いた移動局速度推定方法
JP2023134956A (ja) * 2022-03-15 2023-09-28 株式会社豊田中央研究所 半導体装置

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US7033876B2 (en) * 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US7009247B2 (en) * 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
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DE102009021485B4 (de) * 2009-05-15 2017-10-05 Globalfoundries Dresden Module One Llc & Co. Kg Halbleiterbauelement mit Metallgate und einem siliziumenthaltenden Widerstand, der auf einer Isolationsstruktur gebildet ist sowie Verfahren zu dessen Herstellung
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CN101673673B (zh) * 2009-09-22 2013-02-27 上海宏力半导体制造有限公司 外延片形成方法及使用该方法形成的外延片
JP5730529B2 (ja) * 2009-10-21 2015-06-10 株式会社半導体エネルギー研究所 半導体装置
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Publication number Priority date Publication date Assignee Title
JP2016130692A (ja) * 2015-01-14 2016-07-21 ソフトバンク株式会社 移動通信システムにおけるドップラースペクトルを用いた移動局速度推定方法
JP2023134956A (ja) * 2022-03-15 2023-09-28 株式会社豊田中央研究所 半導体装置
JP7798627B2 (ja) 2022-03-15 2026-01-14 株式会社豊田中央研究所 半導体装置

Also Published As

Publication number Publication date
KR20040053339A (ko) 2004-06-23
CN100474616C (zh) 2009-04-01
US7094640B2 (en) 2006-08-22
US6657254B2 (en) 2003-12-02
EP1454360A4 (en) 2008-12-17
WO2003046997A1 (en) 2003-06-05
AU2002348308A1 (en) 2003-06-10
US20030094624A1 (en) 2003-05-22
KR100957584B1 (ko) 2010-05-13
EP1454360A1 (en) 2004-09-08
TW200300593A (en) 2003-06-01
CN1695252A (zh) 2005-11-09
US20040113203A1 (en) 2004-06-17

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