CN100474616C - 具有增加的导通电阻的沟槽mosfet器件 - Google Patents

具有增加的导通电阻的沟槽mosfet器件 Download PDF

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Publication number
CN100474616C
CN100474616C CNB028232461A CN02823246A CN100474616C CN 100474616 C CN100474616 C CN 100474616C CN B028232461 A CNB028232461 A CN B028232461A CN 02823246 A CN02823246 A CN 02823246A CN 100474616 C CN100474616 C CN 100474616C
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China
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trench
region
epitaxial layer
substrate
conductivity type
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Expired - Fee Related
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CNB028232461A
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Chinese (zh)
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CN1695252A (zh
Inventor
石甫渊
苏根政
约翰·E·阿马托
崔炎曼
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General Semiconductor Inc
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General Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/667—Vertical DMOS [VDMOS] FETs having substrates comprising insulating layers, e.g. SOI-VDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H10P32/172—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material being crystalline silicon carbide

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB028232461A 2001-11-21 2002-11-20 具有增加的导通电阻的沟槽mosfet器件 Expired - Fee Related CN100474616C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/999,116 2001-11-21
US09/999,116 US6657254B2 (en) 2001-11-21 2001-11-21 Trench MOSFET device with improved on-resistance

Publications (2)

Publication Number Publication Date
CN1695252A CN1695252A (zh) 2005-11-09
CN100474616C true CN100474616C (zh) 2009-04-01

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CNB028232461A Expired - Fee Related CN100474616C (zh) 2001-11-21 2002-11-20 具有增加的导通电阻的沟槽mosfet器件

Country Status (8)

Country Link
US (2) US6657254B2 (https=)
EP (1) EP1454360A4 (https=)
JP (1) JP2005510881A (https=)
KR (1) KR100957584B1 (https=)
CN (1) CN100474616C (https=)
AU (1) AU2002348308A1 (https=)
TW (1) TW200300593A (https=)
WO (1) WO2003046997A1 (https=)

Cited By (1)

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CN102064194A (zh) * 2009-11-12 2011-05-18 三星电子株式会社 凹陷沟道晶体管装置、包括其的显示设备及其制造方法

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CN101673673B (zh) * 2009-09-22 2013-02-27 上海宏力半导体制造有限公司 外延片形成方法及使用该方法形成的外延片
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KR20040053339A (ko) 2004-06-23
US7094640B2 (en) 2006-08-22
US6657254B2 (en) 2003-12-02
EP1454360A4 (en) 2008-12-17
WO2003046997A1 (en) 2003-06-05
AU2002348308A1 (en) 2003-06-10
US20030094624A1 (en) 2003-05-22
JP2005510881A (ja) 2005-04-21
KR100957584B1 (ko) 2010-05-13
EP1454360A1 (en) 2004-09-08
TW200300593A (en) 2003-06-01
CN1695252A (zh) 2005-11-09
US20040113203A1 (en) 2004-06-17

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