KR100957584B1 - 트렌치 ｍｏｓｆｅｔ 디바이스 및 이 디바이스를 형성하는 방법 - Google Patents

트렌치 ｍｏｓｆｅｔ 디바이스 및 이 디바이스를 형성하는 방법 Download PDF

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KR100957584B1
KR100957584B1 KR1020047007618A KR20047007618A KR100957584B1 KR 100957584 B1 KR100957584 B1 KR 100957584B1 KR 1020047007618 A KR1020047007618 A KR 1020047007618A KR 20047007618 A KR20047007618 A KR 20047007618A KR 100957584 B1 KR100957584 B1 KR 100957584B1
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trench
region
substrate
epitaxial layer
conductivity type
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Expired - Fee Related
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KR20040053339A (ko
Inventor
퓨-이완 히시히
군 종 소
존 이. 아마토
얀 맨 츄이
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제네럴 세미컨덕터, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/667—Vertical DMOS [VDMOS] FETs having substrates comprising insulating layers, e.g. SOI-VDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H10P32/172—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material being crystalline silicon carbide

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020047007618A 2001-11-21 2002-11-20 트렌치 ｍｏｓｆｅｔ 디바이스 및 이 디바이스를 형성하는 방법 Expired - Fee Related KR100957584B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/999,116 2001-11-21
US09/999,116 US6657254B2 (en) 2001-11-21 2001-11-21 Trench MOSFET device with improved on-resistance
PCT/US2002/037265 WO2003046997A1 (en) 2001-11-21 2002-11-20 Trench mosfet device with improved on-resistance

Publications (2)

Publication Number Publication Date
KR20040053339A KR20040053339A (ko) 2004-06-23
KR100957584B1 true KR100957584B1 (ko) 2010-05-13

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KR1020047007618A Expired - Fee Related KR100957584B1 (ko) 2001-11-21 2002-11-20 트렌치 ｍｏｓｆｅｔ 디바이스 및 이 디바이스를 형성하는 방법

Country Status (8)

Country Link
US (2) US6657254B2 (https=)
EP (1) EP1454360A4 (https=)
JP (1) JP2005510881A (https=)
KR (1) KR100957584B1 (https=)
CN (1) CN100474616C (https=)
AU (1) AU2002348308A1 (https=)
TW (1) TW200300593A (https=)
WO (1) WO2003046997A1 (https=)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US7033876B2 (en) * 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US7009247B2 (en) * 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
US6784505B2 (en) * 2002-05-03 2004-08-31 Fairchild Semiconductor Corporation Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique
US6919599B2 (en) * 2002-06-28 2005-07-19 International Rectifier Corporation Short channel trench MOSFET with reduced gate charge
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP3954541B2 (ja) * 2003-08-05 2007-08-08 株式会社東芝 半導体装置及びその製造方法
KR100541139B1 (ko) * 2003-10-02 2006-01-11 주식회사 케이이씨 트렌치 모스 및 그 제조 방법
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7045857B2 (en) * 2004-03-26 2006-05-16 Siliconix Incorporated Termination for trench MIS device having implanted drain-drift region
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7262111B1 (en) * 2004-09-07 2007-08-28 National Semiconductor Corporation Method for providing a deep connection to a substrate or buried layer in a semiconductor device
KR100582374B1 (ko) * 2004-09-08 2006-05-22 매그나칩 반도체 유한회사 고전압 트랜지스터 및 그 제조 방법
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
JP2006156461A (ja) * 2004-11-25 2006-06-15 Shindengen Electric Mfg Co Ltd 半導体装置及びその製造方法
DE112006000832B4 (de) * 2005-04-06 2018-09-27 Fairchild Semiconductor Corporation Trenched-Gate-Feldeffekttransistoren und Verfahren zum Bilden derselben
KR101254835B1 (ko) 2005-05-26 2013-04-15 페어차일드 세미컨덕터 코포레이션 트랜치-게이트 전계 효과 트랜지스터 및 그 형성 방법
KR101296984B1 (ko) 2005-06-10 2013-08-14 페어차일드 세미컨덕터 코포레이션 전하 균형 전계 효과 트랜지스터
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
JP2007173675A (ja) * 2005-12-26 2007-07-05 Toyota Central Res & Dev Lab Inc 半導体装置とその製造方法
CN101443889B (zh) * 2006-05-12 2012-08-29 维西埃-硅化物公司 功率金属氧化物半导体场效应晶体管触点金属化
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7750398B2 (en) * 2006-09-26 2010-07-06 Force-Mos Technology Corporation Trench MOSFET with trench termination and manufacture thereof
JP4294050B2 (ja) * 2006-12-27 2009-07-08 三洋電機株式会社 半導体装置およびその製造方法
DE102007014038B4 (de) 2007-03-23 2015-02-12 Infineon Technologies Austria Ag Verfahren zur Herstellung eines Halbleiterbauelements
US7615847B2 (en) * 2007-03-23 2009-11-10 Infineon Technologies Austria Ag Method for producing a semiconductor component
DE102007029121B3 (de) 2007-06-25 2008-11-20 Infineon Technologies Austria Ag Verfahren zur Herstellung eines Halbleiterbauelements, sowie Halbleiterbauelement
CN103762243B (zh) 2007-09-21 2017-07-28 飞兆半导体公司 功率器件
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
KR100988776B1 (ko) * 2007-12-27 2010-10-20 주식회사 동부하이텍 리세스드 게이트 트랜지스터의 제조 방법
JP2010219109A (ja) * 2009-03-13 2010-09-30 Sanken Electric Co Ltd トレンチゲート型半導体装置とその製造方法
DE102009021485B4 (de) * 2009-05-15 2017-10-05 Globalfoundries Dresden Module One Llc & Co. Kg Halbleiterbauelement mit Metallgate und einem siliziumenthaltenden Widerstand, der auf einer Isolationsstruktur gebildet ist sowie Verfahren zu dessen Herstellung
CN101997030B (zh) * 2009-08-17 2012-07-04 力士科技股份有限公司 具有浅沟槽结构的沟槽mosfet及其制造方法
CN101673673B (zh) * 2009-09-22 2013-02-27 上海宏力半导体制造有限公司 外延片形成方法及使用该方法形成的外延片
JP5730529B2 (ja) * 2009-10-21 2015-06-10 株式会社半導体エネルギー研究所 半導体装置
KR20110052226A (ko) * 2009-11-12 2011-05-18 삼성전자주식회사 Ｒｃｔ 소자 및 그 ｒｃｔ 소자를 포함하는 디스플레이 장치
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US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
TWI453827B (zh) * 2010-08-20 2014-09-21 Csmc Technologies Fab1 Co Ltd Vertical NPN transistor and its manufacturing method
US20120126341A1 (en) * 2010-11-23 2012-05-24 Microchip Technology Incorporated Using low pressure epi to enable low rdson fet
US8823090B2 (en) 2011-02-17 2014-09-02 International Business Machines Corporation Field-effect transistor and method of creating same
JP5729331B2 (ja) * 2011-04-12 2015-06-03 株式会社デンソー 半導体装置の製造方法及び半導体装置
US8492903B2 (en) 2011-06-29 2013-07-23 International Business Machines Corporation Through silicon via direct FET signal gating
KR101108697B1 (ko) * 2011-09-29 2012-01-25 주식회사 코아스 결속장치 및 이를 구비한 침대
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US9006063B2 (en) * 2013-06-28 2015-04-14 Stmicroelectronics S.R.L. Trench MOSFET
US9136368B2 (en) * 2013-10-03 2015-09-15 Texas Instruments Incorporated Trench gate trench field plate semi-vertical semi-lateral MOSFET
JP5976137B2 (ja) * 2015-01-14 2016-08-23 ソフトバンク株式会社 移動通信システムにおけるドップラースペクトルを用いた移動局速度推定方法
US11018253B2 (en) 2016-01-07 2021-05-25 Lawrence Livermore National Security, Llc Three dimensional vertically structured electronic devices
CN107342226B (zh) * 2017-07-19 2020-07-31 无锡新洁能股份有限公司 超小单元尺寸纵向超结半导体器件的制造方法
DE102017124872B4 (de) * 2017-10-24 2021-02-18 Infineon Technologies Ag Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit
CN113745339B (zh) * 2021-09-07 2022-08-19 无锡新洁能股份有限公司 高可靠性功率半导体器件及其制作方法
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CN114597130B (zh) * 2022-04-02 2022-12-27 致瞻科技(上海)有限公司 一种基于分裂栅的碳化硅mosfet器件及其制造方法
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CN117727776A (zh) * 2023-12-19 2024-03-19 深圳市创飞芯源半导体有限公司 沟槽型mosfet器件及制备方法、电子设备及制备方法
CN118943166A (zh) * 2024-07-26 2024-11-12 深圳市创飞芯源半导体有限公司 共漏极mosfet器件及制备方法、电子设备及制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6084268A (en) 1996-03-05 2000-07-04 Semiconductor Components Industries, Llc Power MOSFET device having low on-resistance and method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4893160A (en) 1987-11-13 1990-01-09 Siliconix Incorporated Method for increasing the performance of trenched devices and the resulting structure
US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
JP2635828B2 (ja) * 1991-01-09 1997-07-30 株式会社東芝 半導体装置
JPH0621468A (ja) * 1992-06-29 1994-01-28 Toshiba Corp 絶縁ゲート型半導体装置
US5410170A (en) 1993-04-14 1995-04-25 Siliconix Incorporated DMOS power transistors with reduced number of contacts using integrated body-source connections
JP3400846B2 (ja) 1994-01-20 2003-04-28 三菱電機株式会社 トレンチ構造を有する半導体装置およびその製造方法
US5424231A (en) * 1994-08-09 1995-06-13 United Microelectronics Corp. Method for manufacturing a VDMOS transistor
EP0948818B1 (en) 1996-07-19 2009-01-07 SILICONIX Incorporated High density trench dmos transistor with trench bottom implant
JP3915180B2 (ja) * 1997-07-03 2007-05-16 富士電機デバイステクノロジー株式会社 トレンチ型ｍｏｓ半導体装置およびその製造方法
US6262453B1 (en) * 1998-04-24 2001-07-17 Magepower Semiconductor Corp. Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate
JP2000269487A (ja) * 1999-03-15 2000-09-29 Toshiba Corp 半導体装置及びその製造方法
JP2001036071A (ja) * 1999-07-16 2001-02-09 Toshiba Corp 半導体装置の製造方法
JP2001102576A (ja) * 1999-09-29 2001-04-13 Sanyo Electric Co Ltd 半導体装置
JP2001345444A (ja) * 1999-10-25 2001-12-14 Seiko Instruments Inc 半導体装置とその製造方法
US6285060B1 (en) * 1999-12-30 2001-09-04 Siliconix Incorporated Barrier accumulation-mode MOSFET

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6084268A (en) 1996-03-05 2000-07-04 Semiconductor Components Industries, Llc Power MOSFET device having low on-resistance and method

Also Published As

Publication number Publication date
KR20040053339A (ko) 2004-06-23
CN100474616C (zh) 2009-04-01
US7094640B2 (en) 2006-08-22
US6657254B2 (en) 2003-12-02
EP1454360A4 (en) 2008-12-17
WO2003046997A1 (en) 2003-06-05
AU2002348308A1 (en) 2003-06-10
US20030094624A1 (en) 2003-05-22
JP2005510881A (ja) 2005-04-21
EP1454360A1 (en) 2004-09-08
TW200300593A (en) 2003-06-01
CN1695252A (zh) 2005-11-09
US20040113203A1 (en) 2004-06-17

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