TW200300593A - Trench MOSFET device with improved on-resistance - Google Patents

Trench MOSFET device with improved on-resistance Download PDF

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Publication number
TW200300593A
TW200300593A TW091133747A TW91133747A TW200300593A TW 200300593 A TW200300593 A TW 200300593A TW 091133747 A TW091133747 A TW 091133747A TW 91133747 A TW91133747 A TW 91133747A TW 200300593 A TW200300593 A TW 200300593A
Authority
TW
Taiwan
Prior art keywords
trench
region
substrate
conductive
epitaxial layer
Prior art date
Application number
TW091133747A
Other languages
English (en)
Chinese (zh)
Inventor
Fwu-Iuan Hshieh
Koon Chong So
John E Amato
Yan Man Tsui
Original Assignee
Gen Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Semiconductor Inc filed Critical Gen Semiconductor Inc
Publication of TW200300593A publication Critical patent/TW200300593A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/667—Vertical DMOS [VDMOS] FETs having substrates comprising insulating layers, e.g. SOI-VDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H10P32/172—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material being crystalline silicon carbide

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW091133747A 2001-11-21 2002-11-19 Trench MOSFET device with improved on-resistance TW200300593A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/999,116 US6657254B2 (en) 2001-11-21 2001-11-21 Trench MOSFET device with improved on-resistance

Publications (1)

Publication Number Publication Date
TW200300593A true TW200300593A (en) 2003-06-01

Family

ID=25545922

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091133747A TW200300593A (en) 2001-11-21 2002-11-19 Trench MOSFET device with improved on-resistance

Country Status (8)

Country Link
US (2) US6657254B2 (https=)
EP (1) EP1454360A4 (https=)
JP (1) JP2005510881A (https=)
KR (1) KR100957584B1 (https=)
CN (1) CN100474616C (https=)
AU (1) AU2002348308A1 (https=)
TW (1) TW200300593A (https=)
WO (1) WO2003046997A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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TWI404170B (zh) * 2006-05-12 2013-08-01 維雪 希里康尼克斯公司 功率金屬氧化物半導體場效電晶體

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CN101673673B (zh) * 2009-09-22 2013-02-27 上海宏力半导体制造有限公司 外延片形成方法及使用该方法形成的外延片
JP5730529B2 (ja) * 2009-10-21 2015-06-10 株式会社半導体エネルギー研究所 半導体装置
KR20110052226A (ko) * 2009-11-12 2011-05-18 삼성전자주식회사 Ｒｃｔ 소자 및 그 ｒｃｔ 소자를 포함하는 디스플레이 장치
CN102244095B (zh) * 2010-05-11 2013-05-22 力士科技股份有限公司 一种功率半导体器件
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Publication number Priority date Publication date Assignee Title
TWI404170B (zh) * 2006-05-12 2013-08-01 維雪 希里康尼克斯公司 功率金屬氧化物半導體場效電晶體

Also Published As

Publication number Publication date
KR20040053339A (ko) 2004-06-23
CN100474616C (zh) 2009-04-01
US7094640B2 (en) 2006-08-22
US6657254B2 (en) 2003-12-02
EP1454360A4 (en) 2008-12-17
WO2003046997A1 (en) 2003-06-05
AU2002348308A1 (en) 2003-06-10
US20030094624A1 (en) 2003-05-22
JP2005510881A (ja) 2005-04-21
KR100957584B1 (ko) 2010-05-13
EP1454360A1 (en) 2004-09-08
CN1695252A (zh) 2005-11-09
US20040113203A1 (en) 2004-06-17

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