CN1305231A - 金属氧化物半导体场效应管半导体器件 - Google Patents
金属氧化物半导体场效应管半导体器件 Download PDFInfo
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- CN1305231A CN1305231A CN00133781A CN00133781A CN1305231A CN 1305231 A CN1305231 A CN 1305231A CN 00133781 A CN00133781 A CN 00133781A CN 00133781 A CN00133781 A CN 00133781A CN 1305231 A CN1305231 A CN 1305231A
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30253699 | 1999-10-25 | ||
JP302536/1999 | 1999-10-25 | ||
JP98574/2000 | 2000-03-31 | ||
JP2000098574 | 2000-03-31 | ||
JP286913/2000 | 2000-09-21 | ||
JP2000286913A JP2001345444A (ja) | 1999-10-25 | 2000-09-21 | 半導体装置とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1305231A true CN1305231A (zh) | 2001-07-25 |
CN1191637C CN1191637C (zh) | 2005-03-02 |
Family
ID=27338542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001337815A Expired - Fee Related CN1191637C (zh) | 1999-10-25 | 2000-10-25 | 金属氧化物半导体场效应管半导体器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6534836B1 (zh) |
JP (1) | JP2001345444A (zh) |
CN (1) | CN1191637C (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1311561C (zh) * | 2003-03-13 | 2007-04-18 | 世界先进积体电路股份有限公司 | 侧面扩散金属氧化半导体晶体管的结构及其制作方法 |
CN100392866C (zh) * | 2001-11-15 | 2008-06-04 | 通用半导体公司 | 具有低栅极电荷的沟槽金属氧化物半导体场效应晶体管 |
CN100463122C (zh) * | 2002-02-20 | 2009-02-18 | 通用半导体公司 | 具有低导通电阻的高电压功率mosfet |
CN1938860B (zh) * | 2004-03-29 | 2010-05-12 | 新电元工业株式会社 | 半导体装置、半导体装置的制造方法 |
CN101958283A (zh) * | 2009-07-09 | 2011-01-26 | 上海华虹Nec电子有限公司 | 获得交替排列的p型和n型半导体薄层结构的方法及结构 |
CN102738001A (zh) * | 2011-03-30 | 2012-10-17 | 茂达电子股份有限公司 | 具有超级介面的功率晶体管的制作方法 |
CN103022112A (zh) * | 2011-09-23 | 2013-04-03 | 万国半导体股份有限公司 | 带有多个外延层的横向pnp双极晶体管 |
CN110808278A (zh) * | 2019-10-18 | 2020-02-18 | 龙腾半导体有限公司 | 超结mosfet结构及其工艺制造方法 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
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US6376878B1 (en) * | 2000-02-11 | 2002-04-23 | Fairchild Semiconductor Corporation | MOS-gated devices with alternating zones of conductivity |
US6627949B2 (en) * | 2000-06-02 | 2003-09-30 | General Semiconductor, Inc. | High voltage power MOSFET having low on-resistance |
US6784486B2 (en) * | 2000-06-23 | 2004-08-31 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions therein |
US6781194B2 (en) * | 2001-04-11 | 2004-08-24 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
EP1396030B1 (en) * | 2001-04-11 | 2011-06-29 | Silicon Semiconductor Corporation | Vertical power semiconductor device and method of making the same |
US6576516B1 (en) * | 2001-12-31 | 2003-06-10 | General Semiconductor, Inc. | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon |
US6566201B1 (en) * | 2001-12-31 | 2003-05-20 | General Semiconductor, Inc. | Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion |
US6750104B2 (en) * | 2001-12-31 | 2004-06-15 | General Semiconductor, Inc. | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source |
JP3652322B2 (ja) * | 2002-04-30 | 2005-05-25 | Necエレクトロニクス株式会社 | 縦型mosfetとその製造方法 |
US7023069B2 (en) * | 2003-12-19 | 2006-04-04 | Third Dimension (3D) Semiconductor, Inc. | Method for forming thick dielectric regions using etched trenches |
US7183610B2 (en) * | 2004-04-30 | 2007-02-27 | Siliconix Incorporated | Super trench MOSFET including buried source electrode and method of fabricating the same |
JP2005317828A (ja) * | 2004-04-30 | 2005-11-10 | Sumitomo Electric Ind Ltd | 高電圧車載電力変換用半導体装置の製造方法と高電圧車載電力変換用半導体装置 |
US6982216B1 (en) | 2004-10-27 | 2006-01-03 | Sony Corporation | MOSFET having reduced parasitic resistance and method of forming same |
US20090057713A1 (en) * | 2007-08-31 | 2009-03-05 | Infineon Technologies Austria Ag | Semiconductor device with a semiconductor body |
KR100910798B1 (ko) | 2007-09-01 | 2009-08-05 | 고려대학교 산학협력단 | 불순물 주입층이 형성된 트랜치를 가지는 고전압용 트랜치절연 게이트 양극성 트랜지스터 및 그 제조방법 |
CN101834208A (zh) * | 2010-04-30 | 2010-09-15 | 苏州硅能半导体科技股份有限公司 | 一种低导通电阻的功率mos场效应管及制造方法 |
CN102376580B (zh) * | 2010-08-26 | 2013-09-11 | 上海华虹Nec电子有限公司 | 超级结半导体器件的制作方法 |
JP5621441B2 (ja) * | 2010-09-14 | 2014-11-12 | 株式会社デンソー | 半導体装置の製造方法 |
TW201246542A (en) * | 2011-05-02 | 2012-11-16 | Anpec Electronics Corp | Power element having super interface |
US8748973B2 (en) | 2011-05-19 | 2014-06-10 | Anpec Electronics Corporation | Super junction transistor and fabrication method thereof |
US9245754B2 (en) * | 2014-05-28 | 2016-01-26 | Mark E. Granahan | Simplified charge balance in a semiconductor device |
CN104716044B (zh) * | 2014-12-19 | 2018-09-18 | 成都士兰半导体制造有限公司 | 半导体器件及其形成方法 |
US9583482B2 (en) * | 2015-02-11 | 2017-02-28 | Monolith Semiconductor Inc. | High voltage semiconductor devices and methods of making the devices |
DE102015122833A1 (de) | 2015-12-23 | 2017-06-29 | Infineon Technologies Ag | Verfahren zum Herstellen einer Halbleitervorrichtung |
JP7119449B2 (ja) | 2018-03-16 | 2022-08-17 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3291957B2 (ja) * | 1995-02-17 | 2002-06-17 | 富士電機株式会社 | 縦型トレンチmisfetおよびその製造方法 |
JP3667906B2 (ja) * | 1996-11-25 | 2005-07-06 | 三洋電機株式会社 | 半導体装置及び半導体装置の製造方法 |
-
2000
- 2000-09-21 JP JP2000286913A patent/JP2001345444A/ja active Pending
- 2000-10-10 US US09/685,503 patent/US6534836B1/en not_active Expired - Lifetime
- 2000-10-25 CN CNB001337815A patent/CN1191637C/zh not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100392866C (zh) * | 2001-11-15 | 2008-06-04 | 通用半导体公司 | 具有低栅极电荷的沟槽金属氧化物半导体场效应晶体管 |
CN100463122C (zh) * | 2002-02-20 | 2009-02-18 | 通用半导体公司 | 具有低导通电阻的高电压功率mosfet |
CN1311561C (zh) * | 2003-03-13 | 2007-04-18 | 世界先进积体电路股份有限公司 | 侧面扩散金属氧化半导体晶体管的结构及其制作方法 |
CN1938860B (zh) * | 2004-03-29 | 2010-05-12 | 新电元工业株式会社 | 半导体装置、半导体装置的制造方法 |
CN101958283A (zh) * | 2009-07-09 | 2011-01-26 | 上海华虹Nec电子有限公司 | 获得交替排列的p型和n型半导体薄层结构的方法及结构 |
CN101958283B (zh) * | 2009-07-09 | 2014-07-09 | 上海华虹宏力半导体制造有限公司 | 获得交替排列的p型和n型半导体薄层结构的方法及结构 |
CN102738001A (zh) * | 2011-03-30 | 2012-10-17 | 茂达电子股份有限公司 | 具有超级介面的功率晶体管的制作方法 |
CN103022112A (zh) * | 2011-09-23 | 2013-04-03 | 万国半导体股份有限公司 | 带有多个外延层的横向pnp双极晶体管 |
CN110808278A (zh) * | 2019-10-18 | 2020-02-18 | 龙腾半导体有限公司 | 超结mosfet结构及其工艺制造方法 |
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