CN101958283A - 获得交替排列的p型和n型半导体薄层结构的方法及结构 - Google Patents
获得交替排列的p型和n型半导体薄层结构的方法及结构 Download PDFInfo
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- CN101958283A CN101958283A CN2009100575811A CN200910057581A CN101958283A CN 101958283 A CN101958283 A CN 101958283A CN 2009100575811 A CN2009100575811 A CN 2009100575811A CN 200910057581 A CN200910057581 A CN 200910057581A CN 101958283 A CN101958283 A CN 101958283A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 64
- 239000010703 silicon Substances 0.000 claims abstract description 64
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 47
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
- H01L21/2256—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides through the applied layer
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/086—Impurity concentration or distribution
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- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Abstract
Description
Claims (12)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910057581.1A CN101958283B (zh) | 2009-07-09 | 2009-07-09 | 获得交替排列的p型和n型半导体薄层结构的方法及结构 |
US12/832,963 US8178409B2 (en) | 2009-07-09 | 2010-07-08 | Semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the same |
Applications Claiming Priority (1)
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CN200910057581.1A CN101958283B (zh) | 2009-07-09 | 2009-07-09 | 获得交替排列的p型和n型半导体薄层结构的方法及结构 |
Publications (2)
Publication Number | Publication Date |
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CN101958283A true CN101958283A (zh) | 2011-01-26 |
CN101958283B CN101958283B (zh) | 2014-07-09 |
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CN200910057581.1A Active CN101958283B (zh) | 2009-07-09 | 2009-07-09 | 获得交替排列的p型和n型半导体薄层结构的方法及结构 |
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US (1) | US8178409B2 (zh) |
CN (1) | CN101958283B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035721A (zh) * | 2012-09-05 | 2013-04-10 | 上海华虹Nec电子有限公司 | 超级结器件及其制造方法 |
CN103035720A (zh) * | 2012-09-05 | 2013-04-10 | 上海华虹Nec电子有限公司 | 超级结器件及其制作方法 |
CN103066110A (zh) * | 2011-10-24 | 2013-04-24 | 茂达电子股份有限公司 | 超级接面晶体管及其制作方法 |
CN106298868A (zh) * | 2015-06-03 | 2017-01-04 | 北大方正集团有限公司 | 一种超结mosfet结构及其制备方法 |
CN114823532A (zh) * | 2022-06-24 | 2022-07-29 | 北京芯可鉴科技有限公司 | 超级结器件的制造方法、超级结器件、芯片和电路 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8084811B2 (en) * | 2009-10-08 | 2011-12-27 | Monolithic Power Systems, Inc. | Power devices with super junctions and associated methods manufacturing |
US8525260B2 (en) * | 2010-03-19 | 2013-09-03 | Monolithic Power Systems, Inc. | Super junction device with deep trench and implant |
TW201243958A (en) * | 2011-04-21 | 2012-11-01 | Anpec Electronics Corp | Method for fabricating a semiconductor power device |
CN102820212B (zh) * | 2011-06-08 | 2015-08-12 | 无锡华润上华半导体有限公司 | 一种深沟槽超级pn结的形成方法 |
JP5827063B2 (ja) | 2011-08-03 | 2015-12-02 | ローム株式会社 | 半導体装置およびその製造方法 |
CN105826195B (zh) * | 2015-01-07 | 2018-12-04 | 北大方正集团有限公司 | 一种超结功率器件及其制作方法 |
US9741717B1 (en) | 2016-10-10 | 2017-08-22 | International Business Machines Corporation | FinFETs with controllable and adjustable channel doping |
US11569345B2 (en) * | 2020-11-23 | 2023-01-31 | Alpha And Omega Semiconductor (Cayman) Ltd. | Gas dopant doped deep trench super junction high voltage MOSFET |
Citations (8)
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CN1305231A (zh) * | 1999-10-25 | 2001-07-25 | 精工电子有限公司 | 金属氧化物半导体场效应管半导体器件 |
US6700175B1 (en) * | 1999-07-02 | 2004-03-02 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Vertical semiconductor device having alternating conductivity semiconductor regions |
CN1610975A (zh) * | 2001-12-31 | 2005-04-27 | 通用半导体公司 | 一种用于形成如图 5所示具有衬底(2 )、带有至少一个沟槽 ( 5 2 )的电压维持外延层 ( 1 )、以及邻接并环绕该沟槽的掺杂区(5a)的功率半导体器件的方法 |
US20050181564A1 (en) * | 2003-12-19 | 2005-08-18 | Third Dimension (3D) Semiconductor, Inc. | Method for manufacturing a superjunction device with wide mesas |
CN1701425A (zh) * | 2002-02-20 | 2005-11-23 | 通用半导体公司 | 具有低导通电阻的高电压功率mosfet |
US7226841B2 (en) * | 2001-05-25 | 2007-06-05 | Kabushiki Kaisha Toshiba | Power MOSFET semiconductor device and method of manufacturing the same |
US20070278565A1 (en) * | 2006-05-30 | 2007-12-06 | Semiconductor Components Industries, Llc | Semiconductor device having sub-surface trench charge compensation regions and method |
US20080283956A1 (en) * | 2004-12-27 | 2008-11-20 | Third Dimension (3D) Semiconductor, Inc. | Process for high voltage superjunction termination |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8084811B2 (en) * | 2009-10-08 | 2011-12-27 | Monolithic Power Systems, Inc. | Power devices with super junctions and associated methods manufacturing |
-
2009
- 2009-07-09 CN CN200910057581.1A patent/CN101958283B/zh active Active
-
2010
- 2010-07-08 US US12/832,963 patent/US8178409B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US6700175B1 (en) * | 1999-07-02 | 2004-03-02 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Vertical semiconductor device having alternating conductivity semiconductor regions |
CN1305231A (zh) * | 1999-10-25 | 2001-07-25 | 精工电子有限公司 | 金属氧化物半导体场效应管半导体器件 |
US7226841B2 (en) * | 2001-05-25 | 2007-06-05 | Kabushiki Kaisha Toshiba | Power MOSFET semiconductor device and method of manufacturing the same |
CN1610975A (zh) * | 2001-12-31 | 2005-04-27 | 通用半导体公司 | 一种用于形成如图 5所示具有衬底(2 )、带有至少一个沟槽 ( 5 2 )的电压维持外延层 ( 1 )、以及邻接并环绕该沟槽的掺杂区(5a)的功率半导体器件的方法 |
CN1701425A (zh) * | 2002-02-20 | 2005-11-23 | 通用半导体公司 | 具有低导通电阻的高电压功率mosfet |
US20050181564A1 (en) * | 2003-12-19 | 2005-08-18 | Third Dimension (3D) Semiconductor, Inc. | Method for manufacturing a superjunction device with wide mesas |
US20080283956A1 (en) * | 2004-12-27 | 2008-11-20 | Third Dimension (3D) Semiconductor, Inc. | Process for high voltage superjunction termination |
US20070278565A1 (en) * | 2006-05-30 | 2007-12-06 | Semiconductor Components Industries, Llc | Semiconductor device having sub-surface trench charge compensation regions and method |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103066110A (zh) * | 2011-10-24 | 2013-04-24 | 茂达电子股份有限公司 | 超级接面晶体管及其制作方法 |
CN103035721A (zh) * | 2012-09-05 | 2013-04-10 | 上海华虹Nec电子有限公司 | 超级结器件及其制造方法 |
CN103035720A (zh) * | 2012-09-05 | 2013-04-10 | 上海华虹Nec电子有限公司 | 超级结器件及其制作方法 |
CN103035720B (zh) * | 2012-09-05 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | 超级结器件及其制作方法 |
CN103035721B (zh) * | 2012-09-05 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | 超级结器件及其制造方法 |
CN106298868A (zh) * | 2015-06-03 | 2017-01-04 | 北大方正集团有限公司 | 一种超结mosfet结构及其制备方法 |
CN114823532A (zh) * | 2022-06-24 | 2022-07-29 | 北京芯可鉴科技有限公司 | 超级结器件的制造方法、超级结器件、芯片和电路 |
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Publication number | Publication date |
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CN101958283B (zh) | 2014-07-09 |
US8178409B2 (en) | 2012-05-15 |
US20110006304A1 (en) | 2011-01-13 |
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