JP2005222581A5 - - Google Patents

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Publication number
JP2005222581A5
JP2005222581A5 JP2004026999A JP2004026999A JP2005222581A5 JP 2005222581 A5 JP2005222581 A5 JP 2005222581A5 JP 2004026999 A JP2004026999 A JP 2004026999A JP 2004026999 A JP2004026999 A JP 2004026999A JP 2005222581 A5 JP2005222581 A5 JP 2005222581A5
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JP
Japan
Prior art keywords
signal
circuit
semiconductor memory
memory device
clock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004026999A
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English (en)
Japanese (ja)
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JP2005222581A (ja
Filing date
Publication date
Priority claimed from JP2004026999A external-priority patent/JP2005222581A/ja
Priority to JP2004026999A priority Critical patent/JP2005222581A/ja
Application filed filed Critical
Priority to TW103122670A priority patent/TWI517151B/zh
Priority to TW094102871A priority patent/TWI383394B/zh
Priority to TW100114414A priority patent/TWI460725B/zh
Priority to KR1020050009640A priority patent/KR101120838B1/ko
Priority to US11/049,059 priority patent/US7336557B2/en
Publication of JP2005222581A publication Critical patent/JP2005222581A/ja
Publication of JP2005222581A5 publication Critical patent/JP2005222581A5/ja
Priority to US12/007,032 priority patent/US7480200B2/en
Priority to US12/333,913 priority patent/US7983103B2/en
Priority to US13/081,821 priority patent/US20110199844A1/en
Pending legal-status Critical Current

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JP2004026999A 2004-02-03 2004-02-03 半導体記憶装置 Pending JP2005222581A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2004026999A JP2005222581A (ja) 2004-02-03 2004-02-03 半導体記憶装置
TW103122670A TWI517151B (zh) 2004-02-03 2005-01-31 半導體記憶裝置
TW094102871A TWI383394B (zh) 2004-02-03 2005-01-31 半導體記憶裝置
TW100114414A TWI460725B (zh) 2004-02-03 2005-01-31 半導體記憶裝置
KR1020050009640A KR101120838B1 (ko) 2004-02-03 2005-02-02 휴대 단말기에 탑재하기 적합한 반도체 기억 장치
US11/049,059 US7336557B2 (en) 2004-02-03 2005-02-03 Semiconductor memory device suitable for mounting on portable terminal
US12/007,032 US7480200B2 (en) 2004-02-03 2008-01-04 Semiconductor memory device suitable for mounting on portable terminal
US12/333,913 US7983103B2 (en) 2004-02-03 2008-12-12 Semiconductor memory device suitable for mounting on portable terminal
US13/081,821 US20110199844A1 (en) 2004-02-03 2011-04-07 Semiconductor Memory Device Suitable for Mounting on a Portable Terminal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004026999A JP2005222581A (ja) 2004-02-03 2004-02-03 半導体記憶装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010112253A Division JP5058295B2 (ja) 2010-05-14 2010-05-14 半導体記憶装置
JP2010112252A Division JP5048102B2 (ja) 2010-05-14 2010-05-14 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2005222581A JP2005222581A (ja) 2005-08-18
JP2005222581A5 true JP2005222581A5 (enExample) 2007-03-08

Family

ID=34805858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004026999A Pending JP2005222581A (ja) 2004-02-03 2004-02-03 半導体記憶装置

Country Status (4)

Country Link
US (4) US7336557B2 (enExample)
JP (1) JP2005222581A (enExample)
KR (1) KR101120838B1 (enExample)
TW (3) TWI517151B (enExample)

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CN101640065B (zh) * 2008-07-29 2012-07-04 国际商业机器公司 用于嵌入式dram的刷新控制器及刷新控制方法
KR101697686B1 (ko) * 2009-07-01 2017-01-20 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 구동 방법
JP2011018427A (ja) * 2009-07-10 2011-01-27 Renesas Electronics Corp 半導体記憶装置
KR101043722B1 (ko) * 2010-02-04 2011-06-27 주식회사 하이닉스반도체 레이턴시 제어회로 및 이를 포함하는 반도체 메모리장치
US8422315B2 (en) * 2010-07-06 2013-04-16 Winbond Electronics Corp. Memory chips and memory devices using the same
KR20120081352A (ko) * 2011-01-11 2012-07-19 에스케이하이닉스 주식회사 리프레시 제어 회로, 이를 이용한 메모리 장치 및 그 리프레시 제어 방법
JP5932236B2 (ja) * 2011-04-13 2016-06-08 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びシステム
US9129666B1 (en) * 2011-08-25 2015-09-08 Rambus Inc. Robust commands for timing calibration or recalibration
TWI498889B (zh) * 2012-03-26 2015-09-01 Etron Technology Inc 記憶體及更新記憶體的方法
US9350386B2 (en) 2012-04-12 2016-05-24 Samsung Electronics Co., Ltd. Memory device, memory system, and method of operating the same
JP2013229068A (ja) * 2012-04-24 2013-11-07 Ps4 Luxco S A R L 半導体装置及びこれを備える情報処理システム
US8754691B2 (en) 2012-09-27 2014-06-17 International Business Machines Corporation Memory array pulse width control
JP2014096191A (ja) 2012-11-09 2014-05-22 Renesas Electronics Corp 半導体記憶装置
US9064603B1 (en) 2012-11-28 2015-06-23 Samsung Electronics Co., Ltd. Semiconductor memory device and memory system including the same
US20150003172A1 (en) * 2013-06-26 2015-01-01 Sua KIM Memory module including buffer chip controlling refresh operation of memory devices
TWI553641B (zh) * 2013-12-09 2016-10-11 慧榮科技股份有限公司 資料儲存裝置及其模式偵測方法
US9600179B2 (en) * 2014-07-30 2017-03-21 Arm Limited Access suppression in a memory device
US10394641B2 (en) * 2017-04-10 2019-08-27 Arm Limited Apparatus and method for handling memory access operations
JP6871286B2 (ja) * 2019-02-21 2021-05-12 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． 疑似スタティックランダムアクセスメモリの制御回路及び制御方法
JP6894459B2 (ja) * 2019-02-25 2021-06-30 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． 疑似スタティックランダムアクセスメモリとその動作方法
KR102861798B1 (ko) * 2020-05-19 2025-09-18 에스케이하이닉스 주식회사 커맨드 입력을 제어하기 위한 전자장치
TWI740581B (zh) * 2020-07-20 2021-09-21 華邦電子股份有限公司 虛擬靜態隨機存取記憶體裝置
JP6999791B1 (ja) * 2020-12-28 2022-01-19 華邦電子股▲ふん▼有限公司 半導体記憶装置
JP2023069655A (ja) 2021-11-08 2023-05-18 華邦電子股▲ふん▼有限公司 疑似スタティックランダムアクセスメモリ
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JP2003297080A (ja) * 2002-03-29 2003-10-17 Mitsubishi Electric Corp 半導体記憶装置
JP2004005821A (ja) * 2002-05-31 2004-01-08 Toshiba Corp 同期型半導体記憶装置
JP2004102508A (ja) * 2002-09-06 2004-04-02 Renesas Technology Corp 半導体記憶装置
JP4184104B2 (ja) * 2003-01-30 2008-11-19 株式会社ルネサステクノロジ 半導体装置
JP2004259318A (ja) * 2003-02-24 2004-09-16 Renesas Technology Corp 同期型半導体記憶装置
JP4191018B2 (ja) * 2003-11-26 2008-12-03 エルピーダメモリ株式会社 半導体記憶装置のリフレッシュ制御方式
JP5038742B2 (ja) * 2007-03-01 2012-10-03 ルネサスエレクトロニクス株式会社 セルフリフレッシュ制御回路、半導体装置

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