KR101120838B1 - 휴대 단말기에 탑재하기 적합한 반도체 기억 장치 - Google Patents

휴대 단말기에 탑재하기 적합한 반도체 기억 장치 Download PDF

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Publication number
KR101120838B1
KR101120838B1 KR1020050009640A KR20050009640A KR101120838B1 KR 101120838 B1 KR101120838 B1 KR 101120838B1 KR 1020050009640 A KR1020050009640 A KR 1020050009640A KR 20050009640 A KR20050009640 A KR 20050009640A KR 101120838 B1 KR101120838 B1 KR 101120838B1
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KR
South Korea
Prior art keywords
signal
circuit
output
clock
refresh
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Expired - Fee Related
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KR1020050009640A
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English (en)
Korean (ko)
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KR20060041602A (ko
Inventor
다께오 미끼
세이지 사와다
마사끼 쯔꾸데
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르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20060041602A publication Critical patent/KR20060041602A/ko
Application granted granted Critical
Publication of KR101120838B1 publication Critical patent/KR101120838B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4061—Calibration or ate or cycle tuning

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1020050009640A 2004-02-03 2005-02-02 휴대 단말기에 탑재하기 적합한 반도체 기억 장치 Expired - Fee Related KR101120838B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004026999A JP2005222581A (ja) 2004-02-03 2004-02-03 半導体記憶装置
JPJP-P-2004-00026999 2004-02-03

Publications (2)

Publication Number Publication Date
KR20060041602A KR20060041602A (ko) 2006-05-12
KR101120838B1 true KR101120838B1 (ko) 2012-06-27

Family

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Family Applications (1)

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KR1020050009640A Expired - Fee Related KR101120838B1 (ko) 2004-02-03 2005-02-02 휴대 단말기에 탑재하기 적합한 반도체 기억 장치

Country Status (4)

Country Link
US (4) US7336557B2 (enExample)
JP (1) JP2005222581A (enExample)
KR (1) KR101120838B1 (enExample)
TW (3) TWI383394B (enExample)

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US7245552B2 (en) * 2005-06-22 2007-07-17 Infineon Technologies Ag Parallel data path architecture
EP2098969A4 (en) * 2006-12-26 2013-01-02 Nec Corp LOGIC CIRCUIT DESIGN DEVICE FOR ASYNCHRONOUS LOGIC CIRCUITS, LOGIC CIRCUIT DESIGN METHOD, AND LOGIC CIRCUIT DESIGN PROGRAM
KR100856130B1 (ko) * 2007-01-08 2008-09-03 삼성전자주식회사 동기/ 비동기 동작이 가능한 반도체 메모리 장치 및 상기반도체 메모리 장치의 데이터 입/ 출력 방법
JP4679528B2 (ja) * 2007-01-30 2011-04-27 株式会社東芝 リフレッシュトリガー付き半導体記憶装置
KR100945802B1 (ko) * 2008-06-24 2010-03-08 주식회사 하이닉스반도체 클럭을 생성하는 반도체 집적 회로
CN101640065B (zh) * 2008-07-29 2012-07-04 国际商业机器公司 用于嵌入式dram的刷新控制器及刷新控制方法
KR101697686B1 (ko) * 2009-07-01 2017-01-20 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 구동 방법
JP2011018427A (ja) * 2009-07-10 2011-01-27 Renesas Electronics Corp 半導体記憶装置
KR101043722B1 (ko) * 2010-02-04 2011-06-27 주식회사 하이닉스반도체 레이턴시 제어회로 및 이를 포함하는 반도체 메모리장치
US8422315B2 (en) * 2010-07-06 2013-04-16 Winbond Electronics Corp. Memory chips and memory devices using the same
KR20120081352A (ko) * 2011-01-11 2012-07-19 에스케이하이닉스 주식회사 리프레시 제어 회로, 이를 이용한 메모리 장치 및 그 리프레시 제어 방법
JP5932236B2 (ja) * 2011-04-13 2016-06-08 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びシステム
US9129666B1 (en) * 2011-08-25 2015-09-08 Rambus Inc. Robust commands for timing calibration or recalibration
TWI498889B (zh) * 2012-03-26 2015-09-01 Etron Technology Inc 記憶體及更新記憶體的方法
US9350386B2 (en) 2012-04-12 2016-05-24 Samsung Electronics Co., Ltd. Memory device, memory system, and method of operating the same
JP2013229068A (ja) * 2012-04-24 2013-11-07 Ps4 Luxco S A R L 半導体装置及びこれを備える情報処理システム
US8754691B2 (en) 2012-09-27 2014-06-17 International Business Machines Corporation Memory array pulse width control
JP2014096191A (ja) 2012-11-09 2014-05-22 Renesas Electronics Corp 半導体記憶装置
US9147461B1 (en) * 2012-11-28 2015-09-29 Samsung Electronics Co., Ltd. Semiconductor memory device performing a refresh operation, and memory system including the same
US20150003172A1 (en) * 2013-06-26 2015-01-01 Sua KIM Memory module including buffer chip controlling refresh operation of memory devices
TWI553641B (zh) * 2013-12-09 2016-10-11 慧榮科技股份有限公司 資料儲存裝置及其模式偵測方法
US9600179B2 (en) 2014-07-30 2017-03-21 Arm Limited Access suppression in a memory device
US10394641B2 (en) * 2017-04-10 2019-08-27 Arm Limited Apparatus and method for handling memory access operations
JP6871286B2 (ja) * 2019-02-21 2021-05-12 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． 疑似スタティックランダムアクセスメモリの制御回路及び制御方法
JP6894459B2 (ja) * 2019-02-25 2021-06-30 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． 疑似スタティックランダムアクセスメモリとその動作方法
KR102861798B1 (ko) * 2020-05-19 2025-09-18 에스케이하이닉스 주식회사 커맨드 입력을 제어하기 위한 전자장치
TWI740581B (zh) * 2020-07-20 2021-09-21 華邦電子股份有限公司 虛擬靜態隨機存取記憶體裝置
JP6999791B1 (ja) * 2020-12-28 2022-01-19 華邦電子股▲ふん▼有限公司 半導体記憶装置
JP2023069655A (ja) 2021-11-08 2023-05-18 華邦電子股▲ふん▼有限公司 疑似スタティックランダムアクセスメモリ
JP7235911B1 (ja) 2022-04-28 2023-03-08 華邦電子股▲ふん▼有限公司 擬似ｓｒａｍおよびその読み出し方法
KR102656401B1 (ko) * 2022-06-23 2024-04-09 윈본드 일렉트로닉스 코포레이션 반도체 기억장치 및 이의 제어 방법

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JP2004005821A (ja) * 2002-05-31 2004-01-08 Toshiba Corp 同期型半導体記憶装置

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WO2003005368A1 (fr) * 2001-07-04 2003-01-16 Hitachi, Ltd. Dispositif a semiconducteur et module de memoire
JP2004005821A (ja) * 2002-05-31 2004-01-08 Toshiba Corp 同期型半導体記憶装置

Also Published As

Publication number Publication date
TW201203245A (en) 2012-01-16
US20050169091A1 (en) 2005-08-04
TW200603159A (en) 2006-01-16
TWI517151B (zh) 2016-01-11
TW201440044A (zh) 2014-10-16
TWI460725B (zh) 2014-11-11
JP2005222581A (ja) 2005-08-18
US20110199844A1 (en) 2011-08-18
TWI383394B (zh) 2013-01-21
US7480200B2 (en) 2009-01-20
US20090091997A1 (en) 2009-04-09
KR20060041602A (ko) 2006-05-12
US7983103B2 (en) 2011-07-19
US20080123456A1 (en) 2008-05-29
US7336557B2 (en) 2008-02-26

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