JP2005222581A - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP2005222581A
JP2005222581A JP2004026999A JP2004026999A JP2005222581A JP 2005222581 A JP2005222581 A JP 2005222581A JP 2004026999 A JP2004026999 A JP 2004026999A JP 2004026999 A JP2004026999 A JP 2004026999A JP 2005222581 A JP2005222581 A JP 2005222581A
Authority
JP
Japan
Prior art keywords
signal
circuit
output
clock
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004026999A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005222581A5 (enExample
Inventor
Takeo Miki
武夫 三木
Seiji Sawada
誠二 澤田
Masaki Tsukide
正樹 築出
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004026999A priority Critical patent/JP2005222581A/ja
Priority to TW103122670A priority patent/TWI517151B/zh
Priority to TW094102871A priority patent/TWI383394B/zh
Priority to TW100114414A priority patent/TWI460725B/zh
Priority to KR1020050009640A priority patent/KR101120838B1/ko
Priority to US11/049,059 priority patent/US7336557B2/en
Publication of JP2005222581A publication Critical patent/JP2005222581A/ja
Publication of JP2005222581A5 publication Critical patent/JP2005222581A5/ja
Priority to US12/007,032 priority patent/US7480200B2/en
Priority to US12/333,913 priority patent/US7983103B2/en
Priority to US13/081,821 priority patent/US20110199844A1/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4061—Calibration or ate or cycle tuning

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2004026999A 2004-02-03 2004-02-03 半導体記憶装置 Pending JP2005222581A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2004026999A JP2005222581A (ja) 2004-02-03 2004-02-03 半導体記憶装置
TW103122670A TWI517151B (zh) 2004-02-03 2005-01-31 半導體記憶裝置
TW094102871A TWI383394B (zh) 2004-02-03 2005-01-31 半導體記憶裝置
TW100114414A TWI460725B (zh) 2004-02-03 2005-01-31 半導體記憶裝置
KR1020050009640A KR101120838B1 (ko) 2004-02-03 2005-02-02 휴대 단말기에 탑재하기 적합한 반도체 기억 장치
US11/049,059 US7336557B2 (en) 2004-02-03 2005-02-03 Semiconductor memory device suitable for mounting on portable terminal
US12/007,032 US7480200B2 (en) 2004-02-03 2008-01-04 Semiconductor memory device suitable for mounting on portable terminal
US12/333,913 US7983103B2 (en) 2004-02-03 2008-12-12 Semiconductor memory device suitable for mounting on portable terminal
US13/081,821 US20110199844A1 (en) 2004-02-03 2011-04-07 Semiconductor Memory Device Suitable for Mounting on a Portable Terminal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004026999A JP2005222581A (ja) 2004-02-03 2004-02-03 半導体記憶装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010112253A Division JP5058295B2 (ja) 2010-05-14 2010-05-14 半導体記憶装置
JP2010112252A Division JP5048102B2 (ja) 2010-05-14 2010-05-14 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2005222581A true JP2005222581A (ja) 2005-08-18
JP2005222581A5 JP2005222581A5 (enExample) 2007-03-08

Family

ID=34805858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004026999A Pending JP2005222581A (ja) 2004-02-03 2004-02-03 半導体記憶装置

Country Status (4)

Country Link
US (4) US7336557B2 (enExample)
JP (1) JP2005222581A (enExample)
KR (1) KR101120838B1 (enExample)
TW (3) TWI517151B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010033695A (ja) * 2008-07-29 2010-02-12 Internatl Business Mach Corp <Ibm> 組み込みｄｒａｍ用リフレッシュ・コントローラ及びリフレッシュ制御方法
JP2012221540A (ja) * 2011-04-13 2012-11-12 Elpida Memory Inc 半導体装置及びシステム
JP2023069655A (ja) * 2021-11-08 2023-05-18 華邦電子股▲ふん▼有限公司 疑似スタティックランダムアクセスメモリ

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US6209071B1 (en) 1996-05-07 2001-03-27 Rambus Inc. Asynchronous request/synchronous data dynamic random access memory
US7245552B2 (en) * 2005-06-22 2007-07-17 Infineon Technologies Ag Parallel data path architecture
EP2098969A4 (en) * 2006-12-26 2013-01-02 Nec Corp LOGIC CIRCUIT DESIGN DEVICE FOR ASYNCHRONOUS LOGIC CIRCUITS, LOGIC CIRCUIT DESIGN METHOD, AND LOGIC CIRCUIT DESIGN PROGRAM
KR100856130B1 (ko) * 2007-01-08 2008-09-03 삼성전자주식회사 동기/ 비동기 동작이 가능한 반도체 메모리 장치 및 상기반도체 메모리 장치의 데이터 입/ 출력 방법
JP4679528B2 (ja) * 2007-01-30 2011-04-27 株式会社東芝 リフレッシュトリガー付き半導体記憶装置
KR100945802B1 (ko) * 2008-06-24 2010-03-08 주식회사 하이닉스반도체 클럭을 생성하는 반도체 집적 회로
KR101697686B1 (ko) * 2009-07-01 2017-01-20 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 구동 방법
JP2011018427A (ja) * 2009-07-10 2011-01-27 Renesas Electronics Corp 半導体記憶装置
KR101043722B1 (ko) * 2010-02-04 2011-06-27 주식회사 하이닉스반도체 레이턴시 제어회로 및 이를 포함하는 반도체 메모리장치
US8422315B2 (en) * 2010-07-06 2013-04-16 Winbond Electronics Corp. Memory chips and memory devices using the same
KR20120081352A (ko) * 2011-01-11 2012-07-19 에스케이하이닉스 주식회사 리프레시 제어 회로, 이를 이용한 메모리 장치 및 그 리프레시 제어 방법
US9129666B1 (en) * 2011-08-25 2015-09-08 Rambus Inc. Robust commands for timing calibration or recalibration
TWI498889B (zh) * 2012-03-26 2015-09-01 Etron Technology Inc 記憶體及更新記憶體的方法
US9350386B2 (en) 2012-04-12 2016-05-24 Samsung Electronics Co., Ltd. Memory device, memory system, and method of operating the same
JP2013229068A (ja) * 2012-04-24 2013-11-07 Ps4 Luxco S A R L 半導体装置及びこれを備える情報処理システム
US8754691B2 (en) 2012-09-27 2014-06-17 International Business Machines Corporation Memory array pulse width control
JP2014096191A (ja) 2012-11-09 2014-05-22 Renesas Electronics Corp 半導体記憶装置
US9064603B1 (en) 2012-11-28 2015-06-23 Samsung Electronics Co., Ltd. Semiconductor memory device and memory system including the same
US20150003172A1 (en) * 2013-06-26 2015-01-01 Sua KIM Memory module including buffer chip controlling refresh operation of memory devices
TWI553641B (zh) * 2013-12-09 2016-10-11 慧榮科技股份有限公司 資料儲存裝置及其模式偵測方法
US9600179B2 (en) * 2014-07-30 2017-03-21 Arm Limited Access suppression in a memory device
US10394641B2 (en) * 2017-04-10 2019-08-27 Arm Limited Apparatus and method for handling memory access operations
JP6871286B2 (ja) * 2019-02-21 2021-05-12 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． 疑似スタティックランダムアクセスメモリの制御回路及び制御方法
JP6894459B2 (ja) * 2019-02-25 2021-06-30 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． 疑似スタティックランダムアクセスメモリとその動作方法
KR102861798B1 (ko) * 2020-05-19 2025-09-18 에스케이하이닉스 주식회사 커맨드 입력을 제어하기 위한 전자장치
TWI740581B (zh) * 2020-07-20 2021-09-21 華邦電子股份有限公司 虛擬靜態隨機存取記憶體裝置
JP6999791B1 (ja) * 2020-12-28 2022-01-19 華邦電子股▲ふん▼有限公司 半導体記憶装置
JP7235911B1 (ja) 2022-04-28 2023-03-08 華邦電子股▲ふん▼有限公司 擬似ｓｒａｍおよびその読み出し方法
KR102656401B1 (ko) * 2022-06-23 2024-04-09 윈본드 일렉트로닉스 코포레이션 반도체 기억장치 및 이의 제어 방법

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JPH09259080A (ja) * 1996-03-19 1997-10-03 Fujitsu Ltd 半導体装置
WO2003005368A1 (fr) * 2001-07-04 2003-01-16 Hitachi, Ltd. Dispositif a semiconducteur et module de memoire
JP2004005821A (ja) * 2002-05-31 2004-01-08 Toshiba Corp 同期型半導体記憶装置

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JPH09259080A (ja) * 1996-03-19 1997-10-03 Fujitsu Ltd 半導体装置
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010033695A (ja) * 2008-07-29 2010-02-12 Internatl Business Mach Corp <Ibm> 組み込みｄｒａｍ用リフレッシュ・コントローラ及びリフレッシュ制御方法
JP2012221540A (ja) * 2011-04-13 2012-11-12 Elpida Memory Inc 半導体装置及びシステム
US8958259B2 (en) 2011-04-13 2015-02-17 Ps4 Luxco S.A.R.L. Device performing refresh operations of memory areas
JP2023069655A (ja) * 2021-11-08 2023-05-18 華邦電子股▲ふん▼有限公司 疑似スタティックランダムアクセスメモリ
US12380933B2 (en) 2021-11-08 2025-08-05 Windbond Electronics Corp. Pseudo-static random access memory

Also Published As

Publication number Publication date
US7336557B2 (en) 2008-02-26
US20050169091A1 (en) 2005-08-04
TWI383394B (zh) 2013-01-21
US7983103B2 (en) 2011-07-19
KR20060041602A (ko) 2006-05-12
KR101120838B1 (ko) 2012-06-27
TW200603159A (en) 2006-01-16
US20090091997A1 (en) 2009-04-09
US7480200B2 (en) 2009-01-20
TWI517151B (zh) 2016-01-11
US20110199844A1 (en) 2011-08-18
US20080123456A1 (en) 2008-05-29
TW201203245A (en) 2012-01-16
TW201440044A (zh) 2014-10-16
TWI460725B (zh) 2014-11-11

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