JP2005123620A - 薄膜トランジスタ表示板及びその製造方法 - Google Patents

薄膜トランジスタ表示板及びその製造方法 Download PDF

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Publication number
JP2005123620A
JP2005123620A JP2004298534A JP2004298534A JP2005123620A JP 2005123620 A JP2005123620 A JP 2005123620A JP 2004298534 A JP2004298534 A JP 2004298534A JP 2004298534 A JP2004298534 A JP 2004298534A JP 2005123620 A JP2005123620 A JP 2005123620A
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JP
Japan
Prior art keywords
electrode
thin film
film transistor
transistor array
array panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004298534A
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English (en)
Japanese (ja)
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JP2005123620A5 (enExample
Inventor
Shoeki Den
尚 益 田
Seiei Lee
正 榮 李
Kwon-Young Choi
權 永 崔
Saiko Zen
宰 弘 全
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2005123620A publication Critical patent/JP2005123620A/ja
Publication of JP2005123620A5 publication Critical patent/JP2005123620A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2004298534A 2003-10-13 2004-10-13 薄膜トランジスタ表示板及びその製造方法 Pending JP2005123620A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030071092A KR100997968B1 (ko) 2003-10-13 2003-10-13 박막 트랜지스터 표시판의 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009095173A Division JP2009218604A (ja) 2003-10-13 2009-04-09 薄膜トランジスタ表示板の製造方法

Publications (2)

Publication Number Publication Date
JP2005123620A true JP2005123620A (ja) 2005-05-12
JP2005123620A5 JP2005123620A5 (enExample) 2008-05-01

Family

ID=34567638

Family Applications (2)

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JP2004298534A Pending JP2005123620A (ja) 2003-10-13 2004-10-13 薄膜トランジスタ表示板及びその製造方法
JP2009095173A Pending JP2009218604A (ja) 2003-10-13 2009-04-09 薄膜トランジスタ表示板の製造方法

Family Applications After (1)

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JP2009095173A Pending JP2009218604A (ja) 2003-10-13 2009-04-09 薄膜トランジスタ表示板の製造方法

Country Status (5)

Country Link
US (3) US7151279B2 (enExample)
JP (2) JP2005123620A (enExample)
KR (1) KR100997968B1 (enExample)
CN (2) CN101447491B (enExample)
TW (1) TWI333693B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8411239B2 (en) 2009-02-13 2013-04-02 Sharp Kabushiki Kaisha Array substrate, liquid crystal display device, electronic device

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KR101061844B1 (ko) * 2004-06-29 2011-09-02 삼성전자주식회사 박막 표시판의 제조 방법
KR101160825B1 (ko) * 2004-08-18 2012-06-29 삼성전자주식회사 액정 표시 장치
KR101090253B1 (ko) * 2004-10-06 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치
KR20060097381A (ko) * 2005-03-09 2006-09-14 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR101217157B1 (ko) * 2005-10-20 2012-12-31 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조 방법
JP5231719B2 (ja) * 2006-03-30 2013-07-10 富士通株式会社 電界効果トランジスタの製造方法
KR20090061112A (ko) * 2007-12-11 2009-06-16 삼성전자주식회사 박막 트랜지스터 및 이를 구비하는 액정 표시 장치
KR101999970B1 (ko) 2008-09-19 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI484271B (zh) * 2012-08-09 2015-05-11 Au Optronics Corp 畫素結構及畫素結構的製作方法
CN108305881B (zh) 2018-03-23 2020-08-11 京东方科技集团股份有限公司 阵列基板及其制造方法、显示面板、显示装置

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* Cited by examiner, † Cited by third party
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JP2002190605A (ja) * 2000-10-12 2002-07-05 Sanyo Electric Co Ltd トランジスタ及びそれを備える表示装置
JP2003121866A (ja) * 2001-10-12 2003-04-23 Samsung Electronics Co Ltd 広視野角液晶表示装置及びその基板

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JPH03233431A (ja) 1990-02-09 1991-10-17 Hitachi Ltd 液晶ディスプレイパネル
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KR100391157B1 (ko) 2001-10-25 2003-07-16 엘지.필립스 엘시디 주식회사 액정 표시 장치용 어레이 기판 및 그의 제조 방법
KR100635042B1 (ko) * 2001-12-14 2006-10-17 삼성에스디아이 주식회사 전면전극을 구비한 평판표시장치 및 그의 제조방법
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Publication number Priority date Publication date Assignee Title
JP2002190605A (ja) * 2000-10-12 2002-07-05 Sanyo Electric Co Ltd トランジスタ及びそれを備える表示装置
JP2003121866A (ja) * 2001-10-12 2003-04-23 Samsung Electronics Co Ltd 広視野角液晶表示装置及びその基板

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8411239B2 (en) 2009-02-13 2013-04-02 Sharp Kabushiki Kaisha Array substrate, liquid crystal display device, electronic device
JP5442645B2 (ja) * 2009-02-13 2014-03-12 シャープ株式会社 アレイ基板、液晶表示装置、電子装置

Also Published As

Publication number Publication date
US20070091220A1 (en) 2007-04-26
US20050104069A1 (en) 2005-05-19
US7408200B2 (en) 2008-08-05
KR100997968B1 (ko) 2010-12-02
US7151279B2 (en) 2006-12-19
US20080210943A1 (en) 2008-09-04
TWI333693B (en) 2010-11-21
TW200522364A (en) 2005-07-01
CN101447491B (zh) 2011-04-27
CN1610111A (zh) 2005-04-27
CN100514640C (zh) 2009-07-15
US7550329B2 (en) 2009-06-23
JP2009218604A (ja) 2009-09-24
KR20050035428A (ko) 2005-04-18
CN101447491A (zh) 2009-06-03

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