TWI333693B - Thin film transistor array panel and manufacturing method thereof - Google Patents

Thin film transistor array panel and manufacturing method thereof Download PDF

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Publication number
TWI333693B
TWI333693B TW093129429A TW93129429A TWI333693B TW I333693 B TWI333693 B TW I333693B TW 093129429 A TW093129429 A TW 093129429A TW 93129429 A TW93129429 A TW 93129429A TW I333693 B TWI333693 B TW I333693B
Authority
TW
Taiwan
Prior art keywords
electrode
thin film
film transistor
array panel
signal line
Prior art date
Application number
TW093129429A
Other languages
English (en)
Chinese (zh)
Other versions
TW200522364A (en
Inventor
Sahng-Ik Jun
Jae-Hong Jeon
Kwon-Young Choi
Jeong-Young Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200522364A publication Critical patent/TW200522364A/zh
Application granted granted Critical
Publication of TWI333693B publication Critical patent/TWI333693B/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW093129429A 2003-10-13 2004-09-29 Thin film transistor array panel and manufacturing method thereof TWI333693B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030071092A KR100997968B1 (ko) 2003-10-13 2003-10-13 박막 트랜지스터 표시판의 제조 방법

Publications (2)

Publication Number Publication Date
TW200522364A TW200522364A (en) 2005-07-01
TWI333693B true TWI333693B (en) 2010-11-21

Family

ID=34567638

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093129429A TWI333693B (en) 2003-10-13 2004-09-29 Thin film transistor array panel and manufacturing method thereof

Country Status (5)

Country Link
US (3) US7151279B2 (enExample)
JP (2) JP2005123620A (enExample)
KR (1) KR100997968B1 (enExample)
CN (2) CN101447491B (enExample)
TW (1) TWI333693B (enExample)

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KR101160825B1 (ko) * 2004-08-18 2012-06-29 삼성전자주식회사 액정 표시 장치
KR101090253B1 (ko) * 2004-10-06 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치
KR20060097381A (ko) * 2005-03-09 2006-09-14 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR101217157B1 (ko) * 2005-10-20 2012-12-31 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조 방법
JP5231719B2 (ja) * 2006-03-30 2013-07-10 富士通株式会社 電界効果トランジスタの製造方法
KR20090061112A (ko) * 2007-12-11 2009-06-16 삼성전자주식회사 박막 트랜지스터 및 이를 구비하는 액정 표시 장치
KR101999970B1 (ko) 2008-09-19 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5442645B2 (ja) * 2009-02-13 2014-03-12 シャープ株式会社 アレイ基板、液晶表示装置、電子装置
TWI484271B (zh) * 2012-08-09 2015-05-11 Au Optronics Corp 畫素結構及畫素結構的製作方法
CN108305881B (zh) 2018-03-23 2020-08-11 京东方科技集团股份有限公司 阵列基板及其制造方法、显示面板、显示装置

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JPH03233431A (ja) 1990-02-09 1991-10-17 Hitachi Ltd 液晶ディスプレイパネル
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KR100635042B1 (ko) * 2001-12-14 2006-10-17 삼성에스디아이 주식회사 전면전극을 구비한 평판표시장치 및 그의 제조방법
KR100464208B1 (ko) * 2001-12-20 2005-01-03 엘지.필립스 엘시디 주식회사 액정 표시장치 및 그 구동방법
CN1615453A (zh) * 2002-01-15 2005-05-11 三星电子株式会社 液晶显示器及其制造方法
KR100859524B1 (ko) * 2002-07-11 2008-09-22 삼성전자주식회사 박막 트랜지스터 기판
US6920060B2 (en) 2002-08-14 2005-07-19 Intel Corporation Memory device, circuits and methods for operating a memory device
TWI234043B (en) * 2003-11-26 2005-06-11 Hannstar Display Corp Method of manufacturing liquid crystal display

Also Published As

Publication number Publication date
JP2005123620A (ja) 2005-05-12
US20070091220A1 (en) 2007-04-26
US20050104069A1 (en) 2005-05-19
US7408200B2 (en) 2008-08-05
KR100997968B1 (ko) 2010-12-02
US7151279B2 (en) 2006-12-19
US20080210943A1 (en) 2008-09-04
TW200522364A (en) 2005-07-01
CN101447491B (zh) 2011-04-27
CN1610111A (zh) 2005-04-27
CN100514640C (zh) 2009-07-15
US7550329B2 (en) 2009-06-23
JP2009218604A (ja) 2009-09-24
KR20050035428A (ko) 2005-04-18
CN101447491A (zh) 2009-06-03

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