KR100997968B1 - 박막 트랜지스터 표시판의 제조 방법 - Google Patents

박막 트랜지스터 표시판의 제조 방법 Download PDF

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Publication number
KR100997968B1
KR100997968B1 KR1020030071092A KR20030071092A KR100997968B1 KR 100997968 B1 KR100997968 B1 KR 100997968B1 KR 1020030071092 A KR1020030071092 A KR 1020030071092A KR 20030071092 A KR20030071092 A KR 20030071092A KR 100997968 B1 KR100997968 B1 KR 100997968B1
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KR
South Korea
Prior art keywords
electrode
gate
thin film
drain electrode
line
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Expired - Lifetime
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KR1020030071092A
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English (en)
Korean (ko)
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KR20050035428A (ko
Inventor
전상익
전재홍
최권영
이정영
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삼성전자주식회사
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Priority to KR1020030071092A priority Critical patent/KR100997968B1/ko
Priority to TW093129429A priority patent/TWI333693B/zh
Priority to US10/954,524 priority patent/US7151279B2/en
Priority to CN2008101807703A priority patent/CN101447491B/zh
Priority to CNB2004100839272A priority patent/CN100514640C/zh
Priority to JP2004298534A priority patent/JP2005123620A/ja
Publication of KR20050035428A publication Critical patent/KR20050035428A/ko
Priority to US11/612,141 priority patent/US7408200B2/en
Priority to US12/119,707 priority patent/US7550329B2/en
Priority to JP2009095173A priority patent/JP2009218604A/ja
Application granted granted Critical
Publication of KR100997968B1 publication Critical patent/KR100997968B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020030071092A 2003-10-13 2003-10-13 박막 트랜지스터 표시판의 제조 방법 Expired - Lifetime KR100997968B1 (ko)

Priority Applications (9)

Application Number Priority Date Filing Date Title
KR1020030071092A KR100997968B1 (ko) 2003-10-13 2003-10-13 박막 트랜지스터 표시판의 제조 방법
US10/954,524 US7151279B2 (en) 2003-10-13 2004-09-29 Thin film transistor array panel and manufacturing method thereof
TW093129429A TWI333693B (en) 2003-10-13 2004-09-29 Thin film transistor array panel and manufacturing method thereof
CNB2004100839272A CN100514640C (zh) 2003-10-13 2004-10-12 薄膜晶体管阵列面板及其制造方法
CN2008101807703A CN101447491B (zh) 2003-10-13 2004-10-12 薄膜晶体管阵列面板
JP2004298534A JP2005123620A (ja) 2003-10-13 2004-10-13 薄膜トランジスタ表示板及びその製造方法
US11/612,141 US7408200B2 (en) 2003-10-13 2006-12-18 Thin film transistor array panel and manufacturing method thereof
US12/119,707 US7550329B2 (en) 2003-10-13 2008-05-13 Thin film transistor array panel and manufacturing method thereof
JP2009095173A JP2009218604A (ja) 2003-10-13 2009-04-09 薄膜トランジスタ表示板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030071092A KR100997968B1 (ko) 2003-10-13 2003-10-13 박막 트랜지스터 표시판의 제조 방법

Publications (2)

Publication Number Publication Date
KR20050035428A KR20050035428A (ko) 2005-04-18
KR100997968B1 true KR100997968B1 (ko) 2010-12-02

Family

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KR1020030071092A Expired - Lifetime KR100997968B1 (ko) 2003-10-13 2003-10-13 박막 트랜지스터 표시판의 제조 방법

Country Status (5)

Country Link
US (3) US7151279B2 (enExample)
JP (2) JP2005123620A (enExample)
KR (1) KR100997968B1 (enExample)
CN (2) CN101447491B (enExample)
TW (1) TWI333693B (enExample)

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KR101061844B1 (ko) * 2004-06-29 2011-09-02 삼성전자주식회사 박막 표시판의 제조 방법
KR101160825B1 (ko) * 2004-08-18 2012-06-29 삼성전자주식회사 액정 표시 장치
KR101090253B1 (ko) * 2004-10-06 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치
KR20060097381A (ko) * 2005-03-09 2006-09-14 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR101217157B1 (ko) * 2005-10-20 2012-12-31 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조 방법
JP5231719B2 (ja) * 2006-03-30 2013-07-10 富士通株式会社 電界効果トランジスタの製造方法
KR20090061112A (ko) * 2007-12-11 2009-06-16 삼성전자주식회사 박막 트랜지스터 및 이를 구비하는 액정 표시 장치
KR101999970B1 (ko) 2008-09-19 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5442645B2 (ja) * 2009-02-13 2014-03-12 シャープ株式会社 アレイ基板、液晶表示装置、電子装置
TWI484271B (zh) * 2012-08-09 2015-05-11 Au Optronics Corp 畫素結構及畫素結構的製作方法
CN108305881B (zh) 2018-03-23 2020-08-11 京东方科技集团股份有限公司 阵列基板及其制造方法、显示面板、显示装置

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JPH02285326A (ja) 1989-04-27 1990-11-22 Toshiba Corp アクティブマトリックス型液晶表示素子
JPH03233431A (ja) 1990-02-09 1991-10-17 Hitachi Ltd 液晶ディスプレイパネル
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Also Published As

Publication number Publication date
JP2005123620A (ja) 2005-05-12
US20070091220A1 (en) 2007-04-26
US20050104069A1 (en) 2005-05-19
US7408200B2 (en) 2008-08-05
US7151279B2 (en) 2006-12-19
US20080210943A1 (en) 2008-09-04
TWI333693B (en) 2010-11-21
TW200522364A (en) 2005-07-01
CN101447491B (zh) 2011-04-27
CN1610111A (zh) 2005-04-27
CN100514640C (zh) 2009-07-15
US7550329B2 (en) 2009-06-23
JP2009218604A (ja) 2009-09-24
KR20050035428A (ko) 2005-04-18
CN101447491A (zh) 2009-06-03

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