CN101447491B - 薄膜晶体管阵列面板 - Google Patents

薄膜晶体管阵列面板 Download PDF

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Publication number
CN101447491B
CN101447491B CN2008101807703A CN200810180770A CN101447491B CN 101447491 B CN101447491 B CN 101447491B CN 2008101807703 A CN2008101807703 A CN 2008101807703A CN 200810180770 A CN200810180770 A CN 200810180770A CN 101447491 B CN101447491 B CN 101447491B
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CN
China
Prior art keywords
thin film
film transistor
drain
signal line
array panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2008101807703A
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English (en)
Chinese (zh)
Other versions
CN101447491A (zh
Inventor
田尚益
全宰弘
崔权永
李正荣
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101447491A publication Critical patent/CN101447491A/zh
Application granted granted Critical
Publication of CN101447491B publication Critical patent/CN101447491B/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN2008101807703A 2003-10-13 2004-10-12 薄膜晶体管阵列面板 Expired - Lifetime CN101447491B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020030071092A KR100997968B1 (ko) 2003-10-13 2003-10-13 박막 트랜지스터 표시판의 제조 방법
KR10-2003-0071092 2003-10-13
KR1020030071092 2003-10-13

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100839272A Division CN100514640C (zh) 2003-10-13 2004-10-12 薄膜晶体管阵列面板及其制造方法

Publications (2)

Publication Number Publication Date
CN101447491A CN101447491A (zh) 2009-06-03
CN101447491B true CN101447491B (zh) 2011-04-27

Family

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Family Applications (2)

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CN2008101807703A Expired - Lifetime CN101447491B (zh) 2003-10-13 2004-10-12 薄膜晶体管阵列面板
CNB2004100839272A Expired - Lifetime CN100514640C (zh) 2003-10-13 2004-10-12 薄膜晶体管阵列面板及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2004100839272A Expired - Lifetime CN100514640C (zh) 2003-10-13 2004-10-12 薄膜晶体管阵列面板及其制造方法

Country Status (5)

Country Link
US (3) US7151279B2 (enExample)
JP (2) JP2005123620A (enExample)
KR (1) KR100997968B1 (enExample)
CN (2) CN101447491B (enExample)
TW (1) TWI333693B (enExample)

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KR101061844B1 (ko) * 2004-06-29 2011-09-02 삼성전자주식회사 박막 표시판의 제조 방법
KR101160825B1 (ko) * 2004-08-18 2012-06-29 삼성전자주식회사 액정 표시 장치
KR101090253B1 (ko) * 2004-10-06 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치
KR20060097381A (ko) * 2005-03-09 2006-09-14 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR101217157B1 (ko) * 2005-10-20 2012-12-31 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조 방법
JP5231719B2 (ja) * 2006-03-30 2013-07-10 富士通株式会社 電界効果トランジスタの製造方法
KR20090061112A (ko) * 2007-12-11 2009-06-16 삼성전자주식회사 박막 트랜지스터 및 이를 구비하는 액정 표시 장치
KR101999970B1 (ko) 2008-09-19 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5442645B2 (ja) * 2009-02-13 2014-03-12 シャープ株式会社 アレイ基板、液晶表示装置、電子装置
TWI484271B (zh) * 2012-08-09 2015-05-11 Au Optronics Corp 畫素結構及畫素結構的製作方法
CN108305881B (zh) 2018-03-23 2020-08-11 京东方科技集团股份有限公司 阵列基板及其制造方法、显示面板、显示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5777703A (en) * 1994-09-30 1998-07-07 Sanyo Electric Co., Ltd. Active matrix type liquid crystal display apparatus with a projection part in the drain line

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JPH02285326A (ja) 1989-04-27 1990-11-22 Toshiba Corp アクティブマトリックス型液晶表示素子
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5777703A (en) * 1994-09-30 1998-07-07 Sanyo Electric Co., Ltd. Active matrix type liquid crystal display apparatus with a projection part in the drain line

Non-Patent Citations (1)

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Also Published As

Publication number Publication date
JP2005123620A (ja) 2005-05-12
US20070091220A1 (en) 2007-04-26
US20050104069A1 (en) 2005-05-19
US7408200B2 (en) 2008-08-05
KR100997968B1 (ko) 2010-12-02
US7151279B2 (en) 2006-12-19
US20080210943A1 (en) 2008-09-04
TWI333693B (en) 2010-11-21
TW200522364A (en) 2005-07-01
CN1610111A (zh) 2005-04-27
CN100514640C (zh) 2009-07-15
US7550329B2 (en) 2009-06-23
JP2009218604A (ja) 2009-09-24
KR20050035428A (ko) 2005-04-18
CN101447491A (zh) 2009-06-03

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C06 Publication
PB01 Publication
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SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SAMSUNG DISPLAY CO., LTD.

Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD.

Effective date: 20121226

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20121226

Address after: Gyeonggi Do, South Korea

Patentee after: SAMSUNG DISPLAY Co.,Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Samsung Electronics Co.,Ltd.

CX01 Expiry of patent term

Granted publication date: 20110427

CX01 Expiry of patent term