JP2005092969A5 - - Google Patents

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Publication number
JP2005092969A5
JP2005092969A5 JP2003323633A JP2003323633A JP2005092969A5 JP 2005092969 A5 JP2005092969 A5 JP 2005092969A5 JP 2003323633 A JP2003323633 A JP 2003323633A JP 2003323633 A JP2003323633 A JP 2003323633A JP 2005092969 A5 JP2005092969 A5 JP 2005092969A5
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JP
Japan
Prior art keywords
block
banks
memory device
spare
normal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003323633A
Other languages
English (en)
Japanese (ja)
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JP2005092969A (ja
Filing date
Publication date
Priority to JP2003323633A priority Critical patent/JP2005092969A/ja
Application filed filed Critical
Priority claimed from JP2003323633A external-priority patent/JP2005092969A/ja
Priority to KR1020040073840A priority patent/KR100629291B1/ko
Priority to US10/940,764 priority patent/US7248513B2/en
Publication of JP2005092969A publication Critical patent/JP2005092969A/ja
Priority to KR1020060026580A priority patent/KR100668540B1/ko
Publication of JP2005092969A5 publication Critical patent/JP2005092969A5/ja
Priority to US11/819,203 priority patent/US7447087B2/en
Priority to US12/251,894 priority patent/US7782672B2/en
Priority to US12/849,254 priority patent/US8000159B2/en
Priority to US13/178,182 priority patent/US8208303B2/en
Priority to US13/481,540 priority patent/US8446765B2/en
Pending legal-status Critical Current

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JP2003323633A 2003-09-16 2003-09-16 不揮発性半導体記憶装置 Pending JP2005092969A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2003323633A JP2005092969A (ja) 2003-09-16 2003-09-16 不揮発性半導体記憶装置
KR1020040073840A KR100629291B1 (ko) 2003-09-16 2004-09-15 반도체 기억 장치
US10/940,764 US7248513B2 (en) 2003-09-16 2004-09-15 Semiconductor memory device having memory block configuration
KR1020060026580A KR100668540B1 (ko) 2003-09-16 2006-03-23 메모리 블록 구성을 갖는 반도체 기억 장치
US11/819,203 US7447087B2 (en) 2003-09-16 2007-06-26 Semiconductor memory device having memory block configuration
US12/251,894 US7782672B2 (en) 2003-09-16 2008-10-15 Semiconductor memory device having memory block configuration
US12/849,254 US8000159B2 (en) 2003-09-16 2010-08-03 Semiconductor memory device having memory block configuration
US13/178,182 US8208303B2 (en) 2003-09-16 2011-07-07 Semiconductor memory device having memory block configuration
US13/481,540 US8446765B2 (en) 2003-09-16 2012-05-25 Semiconductor memory device having memory block configuration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003323633A JP2005092969A (ja) 2003-09-16 2003-09-16 不揮発性半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010226419A Division JP5094941B2 (ja) 2010-10-06 2010-10-06 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2005092969A JP2005092969A (ja) 2005-04-07
JP2005092969A5 true JP2005092969A5 (https=) 2006-09-21

Family

ID=34270036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003323633A Pending JP2005092969A (ja) 2003-09-16 2003-09-16 不揮発性半導体記憶装置

Country Status (3)

Country Link
US (6) US7248513B2 (https=)
JP (1) JP2005092969A (https=)
KR (2) KR100629291B1 (https=)

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US11024352B2 (en) 2012-04-10 2021-06-01 Samsung Electronics Co., Ltd. Memory system for access concentration decrease management and access concentration decrease method
US10097086B2 (en) * 2016-10-12 2018-10-09 Cypress Semiconductor Corporation Fast ramp low supply charge pump circuits
TW202301125A (zh) * 2017-07-30 2023-01-01 埃拉德 希提 具有以記憶體為基礎的分散式處理器架構的記憶體晶片
CN118692545A (zh) * 2021-03-24 2024-09-24 长江存储科技有限责任公司 使用冗余存储体进行故障主存储体修复的存储器件

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